< igbt modules> cm300rxl-24s1 - mitsubishi electric€¦ · cm300rxl-24s1 high power...

<IGBT Modules>

Publication Date : July 2015 1 CMH-10694-* Ver.1.0

CM300RXL-24S1 HIGH POWER SWITCHING USE INSULATED TYPE

Collector current IC .............….......................… 3 0 0 A Collector-emitter voltage VCES ......................… 1 2 0 0 V

Maximum junction temperature T j m a x .............. 1 7 5 °C

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant sevenpack (3φ Inverter+Chopper Brake) ●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm

TERMINAL

t=0.8

SECTION A

DETAIL B

INTERNAL CONNECTION

Tolerance otherwise specified Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

<IGBT Modules>



MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWD

Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC

Collector current DC, TC=94 °C (Note2, 4) 300

A

ICRM Pulse, Repetitive, VGE=15 V (Note3) 600 Pt o t Total power dissipation TC=25 °C (Note2, 4) 1665 W IE (Note1)

Emitter current DC (Note2) 300

A

IERM (Note1) Pulse, Repetitive (Note3) 600

BRAKE PART IGBT/DIODE Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC

Collector current DC, TC=107 °C (Note2, 4) 150

A

ICRM Pulse, Repetitive (Note3) 300 Pt o t Total power dissipation TC=25 °C (Note2, 4) 935 W VRRM Repetitive peak reverse voltage G-E short-circuited 1200 V IF

Forward current DC (Note2) 150

A

IFRM Pulse, Repetitive (Note3) 300

MODULE Symbol Item Conditions Rating Unit

V i s o l Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V T j m a x Maximum junction temperature Instantaneous event (overload) 175

°C

T C m a x Maximum case temperature (Note4) 125 T j o p Operating junction temperature Continuous operation (under switching) -40 ~ +150

°C

T s t g Storage temperature - -40 ~ +125

ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified) INVERTER PART IGBT/FWD

Symbol Item Conditions Limits

Unit

Min. Typ. Max. ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=30 mA, VCE=10 V 5.4 6.0 6.6 V

VCEsat

(Terminal)

Collector-emitter saturation voltage

IC=300 A, VGE=15 V, T j =25 °C - 2.00 2.45 Refer to the figure of test circuit T j =125 °C - 2.30 - V (Note5) T j =150 °C - 2.40 -

VCEsat

(Chip)

IC=300 A, T j =25 °C - 1.85 2.35 VGE=15 V, T j =125 °C - 2.10 - V (Note5) T j =150 °C - 2.15 -

C i e s Input capacitance - - 25 C o e s Output capacitance VCE=10 V, G-E short-circuited - - 5.0 nF C r e s Reverse transfer capacitance - - 0.42 QG Gate charge VCC=600 V, IC=300 A, VGE=15 V - 525 - nC t d ( o n ) Turn-on delay time

VCC=600 V, IC=300 A, VGE=±15 V, - - 800

t r Rise time - - 200 ns

t d ( o f f ) Turn-off delay time

RG=0 Ω, Inductive load - - 600

t f Fall time - - 300

<IGBT Modules>



ELECTRICAL CHARACTERISTICS (cont.; T j=25 °C, unless otherwise specified) INVERTER PART IGBT/FWD


Unit

Min. Typ. Max.

VEC (Note.1)

(Terminal)

Emitter-collector voltage

IE=300 A, G-E short-circuited, T j =25 °C - 2.80 3.60 Refer to the figure of test circuit T j =125 °C - 2.40 - V (Note5) T j =150 °C - 2.30 -

VEC (Note.1)

(Chip)

IE=300 A, T j =25 °C - 2.70 3.50 G-E short-circuited, T j =125 °C - 2.30 - V (Note5) T j =150 °C - 2.20 -

t r r (Note1) Reverse recovery time VCC=600 V, IE=300 A, VGE=±15 V, - - 300 ns Qr r (Note1) Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=300 A, - 45.8 -

mJ

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 31.6 - Err (Note1) Reverse recovery energy per pulse Inductive load - 18.1 - mJ RCC'+EE' Internal lead resistance Main terminals-chip, per switch, TC=25 °C (Note4) - - 1.5 mΩ r g Internal gate resistance Per switch - 10 - Ω

BRAKE PART IGBT/DIODE


Unit

Min. Typ. Max. ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V

VCEsat

(Terminal)

Collector-emitter saturation voltage

IC=150 A, VGE=15 V, T j =25 °C - 1.80 2.25 Refer to the figure of test circuit T j =125 °C - 2.00 - V (Note5) T j =150 °C - 2.05 -

VCEsat

(Chip)

IC=150 A, T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - V (Note5) T j =150 °C - 1.95 -

C i e s Input capacitance - - 15 C o e s Output capacitance VCE=10 V, G-E short-circuited - - 3.0 nF C r e s Reverse transfer capacitance - - 0.25 QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 315 - nC t d ( o n ) Turn-on delay time

VCC=600 V, IC=150 A, VGE=±15 V, - - 800

t r Rise time - - 200 ns

t d ( o f f ) Turn-off delay time

RG=0 Ω, Inductive load - - 600

t f Fall time - - 300 IRRM Repetitive peak reverse current VR=VRRM, G-E short-circuited - - 1.0 mA

VF

(Terminal)

Forward voltage

IF=150 A, T j =25 °C - 2.60 3.40 Refer to the figure of test circuit T j =125 °C - 2.16 - V (Note5) T j =150 °C - 2.10 -

VF

(Chip)

IF=150 A, T j =25 °C - 2.50 3.30 G-E short-circuited, T j =125 °C - 2.06 - V (Note5) T j =150 °C - 2.00 -

t r r Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns Qr r Reverse recovery charge RG=0 Ω, Inductive load - 4.0 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 16.6 -

mJ

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 17.6 - Err Reverse recovery energy per pulse Inductive load - 10.8 - mJ rg Internal gate resistance - - 13 - Ω

<IGBT Modules>



ELECTRICAL CHARACTERISTICS (cont.; T j=25 °C, unless otherwise specified) NTC THERMISTOR PART


Unit

Min. Typ. Max. R25 Zero-power resistance TC=25 °C (Note4) 4.85 5.00 5.15 kΩ ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C (Note4) -7.3 - +7.8 % B(25/50) B-constant Approximate by equation (Note6) - 3375 - K P25 Power dissipation TC=25 °C (Note4) - - 10 mW

THERMAL RESISTANCE CHARACTERISTICS


Unit

Min. Typ. Max. Rt h ( j - c ) Q

Thermal resistance

Junction to case, per Inverter IGBT (Note4) - - 0.09 K/W

Rt h( j - c ) D Junction to case, per Inverter FWD (Note4) - - 0.15 Rt h ( j - c ) Q Junction to case, per Brake IGBT (Note4) - - 0.16

K/W

Rt h( j - c ) D Junction to case, per Brake DIODE (Note4) - - 0.26

Rt h ( c - s ) Contact thermal resistance Case to heat sink, per 1 module,

- 7 - K/kW Thermal grease applied (Note4, 7)

MECHANICAL CHARACTERISTICS


Unit

Min. Typ. Max. Mt Mounting torque Main terminals M 5 screw 2.5 3.0 3.5 N·m Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m

ds Creepage distance Terminal to terminal 16.3 - -

mm

Terminal to base plate 16.8 - -

da Clearance Terminal to terminal 10 - -

mm

Terminal to base plate 10 - - m mass - - 690 - g ec Flatness of base plate On the centerline X, Y (Note8) ±0 - +100 μm

*: This product is This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (DIODE). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.

Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6. )TT

/()RR

ln(B )/(502550

255025

11−=

R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

Y

X

+: Convex

-: Concave

+: C

onve

x

-: C

onca

ve

mounting side

mounting side

Label side

mounting side

Note9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on thickness (t1.6~t2.0) of the PCB.

<IGBT Modules>



RECOMMENDED OPERATING CONDITIONS


Unit

Min. Typ. Max. VCC (DC) Supply voltage Applied across P-N terminals - 600 850 V

VGEon Gate (-emitter drive) voltage Applied across GB-EB terminals 13.5 15.0 16.5

V

Applied across G*P-E*P/G*N-E*N(*=U, V, W) terminals 14.0 15.0 16.5

RG External gate resistance Per switch Inverter IGBT 0 - 15

Ω

Brake IGBT 0 - 30 CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWD (*=U/V/W), DiBr: BRAKE DIODE, Th: NTC thermistor

<IGBT Modules>



TEST CIRCUIT AND WAVEFORMS

VCC

-VGE

+VGE

-VGE

+

vCE

vGE 0

iE

iC

P

N

*

G*P

E*P

G*N

E*N

Load

RG

*: U, V, W

～

t

t f t r t d (o n )

iC

10%

90 %

90 % vGE ～

～

～

0 V

0 A

0

td (o f f ) t

Ir r

Qrr=0.5×Irr×trr

0.5×Irr

t tr r

iE

0 A

IE

Switching characteristics test circuit and waveforms t r r , Qrr characteristics test waveform

0.1×ICM

ICM VCC vCE

iC

t 0

t i

0.1×VCC

0.1×VCC

VCC ICM

vCE iC

t 0 0.02×ICM

t i

IEM

vEC iE

t 0 V

t i

t

VCC

0 A

IGBT Turn-on switching energy IGBT Turn-off switching energy FWD/DIODE Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

<IGBT Modules>



TEST CIRCUIT

V

G-E short- circuited

21

1

22

IC 20

19

18

17

VGE=15 V

V


21

2

22

IC 16

15

14

13

VGE=15 V

V

21

3

22

IC 12

11

10

9


VGE=15 V

VGE=15 V


21

1

22

IC

20

19

18

17

V

21

2

22

IC

16

15

14

13

V

VGE=15 V


21

3

22

IC

12

11

10

9

V

VGE=15 V


VGE=15 V

21

4

22

IC 6

5

V

Gate-emitter short-circuited

GVP-EVP GVN-EVN, GWP-EWP, GWN-EWN, GB-EB


GUP-EUP, GUN-EUN, GWP-EWP, GWN-EWN, GB-EB


GUP-EUP, GUN-EUN, GVP-EVP, GVN-EVN, GB-EB


GUP-EUP, GUN-EUN, GVP-EVP, GVN-EVN, GWP-EWP, GWN-EWN

UP / UN IGBT VP / VN IGBT WP / WN IGBT Brake IGBT

VCEsat characteristics test circuit

V


21

1

22

IE 20

19

18

17


V

21

2

22

IE 16

15

14

13



V

21

3

22

IE 12

11

10

9




21

1

22

IE

20

19

18

17

V


21

2

22

IE

16

15

14

13

V



21

3

22

IE

12

11

10

9

V



21

4

22

IE

6

5

V G-E short-

circuited


GVP-EVP GVN-EVN, GWP-EWP, GWN-EWN, GB-EB


GUP-EUP, GUN-EUN, GWP-EWP, GWN-EWN, GB-EB


GUP-EUP, GUN-EUN, GVP-EVP, GVN-EVN, GB-EB


GUP-EUP, GUN-EUN, GVP-EVP, GVN-EVN, GWP-EWP, GWN-EWN

UP / UN FWD VP / VN FWD WP / WN FWD Brake DIODE

VEC / VF characteristics test circuit

<IGBT Modules>



PERFORMANCE CURVES

INVERTER PART

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

Tj =25 °C (Chip) VGE=15 V (Chip)

CO

LLE

CTO

R C

UR

RE

NT

IC

(A)

CO

LLE

CTO

R-E

MIT

TER

S

ATU

RAT

ION

VO

LTA

GE

V

CE

sat

(V)

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)


(TYPICAL)

FREE WHEELING DIODE FORWARD CHARACTERISTICS

(TYPICAL)

Tj =25 °C (Chip) G-E short-circuited (Chip)

CO

LLE

CTO

R-E

MIT

TER

SAT

UR

ATIO

N V

OLT

AG

E V

CE

sat

(V

)

EM

ITTE

R C

UR

RE

NT

IE

(A

)

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

0

100

200

300

400

500

600

0 2 4 6 8 100

0.5

1

1.5

2

2.5

3

3.5

0 100 200 300 400 500 600

0

2

4

6

8

10

6 8 10 12 14 16 18 2010

100

1000

0 1 2 3 4

Tj =150 °C

Tj =125 °C

Tj =25 °C

Tj =125 °C

Tj =25 °C

IC=600 A

IC=300 A

IC=120 A

VGE=20 V

12 V

11 V

10 V

9 V

Tj =150 °C

15 V

<IGBT Modules>



PERFORMANCE CURVES

INVERTER PART

HALF-BRIDGE SWITCHING CHARACTERISTICS

(TYPICAL)


(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C VCC=600 V, VGE=±15 V, IC=300 A, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C

SW

ITC

HIN

G T

IME

(ns

)

SW

ITC

HIN

G T

IME

(ns

)

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)


(TYPICAL)


(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j =125 °C

VCC=600 V, VGE=±15 V, IC/IE=300 A, INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j =125 °C

SW

ITC

HIN

G E

NE

RG

Y (

mJ)

RE

VE

RS

E R

EC

OV

ER

Y E

NE

RG

Y (

mJ)

SW

ITC

HIN

G E

NE

RG

Y (

mJ)

R

EV

ER

SE

RE

CO

VE

RY

EN

ER

GY

(m

J)

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A)

10

100

1000

10 100 1000100

1000

0.1 1 10 100

0.1

1

10

100

1

10

100

1000

10 100 10001

10

100

1000

0.1 1 10 100

E o n

E o f f

E r r

td ( on )

t r

t f

td ( o f f )

E o n

E o f f

E r r

td ( on )

t r

td ( o f f )

t f

<IGBT Modules>



PERFORMANCE CURVES

INVERTER PART

CAPACITANCE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

G-E short-circuited, Tj =25 °C VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C

CA

PAC

ITA

NC

E

(nF)

t rr

(ns

), I r

r (

A)

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS

(TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC=600 V, IC=300 A, Tj=25 °C Single pulse, TC=25 °C

Rt h( j - c ) Q=0.09 K/W, Rt h ( j - c ) D=0.15 K/W

GAT

E-E

MIT

TER

VO

LTAG

E V

GE

(V)

NO

RM

ALI

ZED

TR

AN

SIE

NT

THER

MA

L R

ESIS

TAN

CE

Zth

(j-c

)

GATE CHARGE QG (nC) TIME (S)

0.01

0.1

1

10

100

0.1 1 10 100

10

100

1000

10 100 1000

0

5

10

15

20

0 200 400 600 8000.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

t r r

I r r

C i e s

C o e s

C r e s

<IGBT Modules>



PERFORMANCE CURVES

BRAKE PART


(TYPICAL)

DIODE FORWARD CHARACTERISTICS

(TYPICAL)

VGE=15 V (Chip) G-E short-circuited (Chip)

CO

LLE

CTO

R-E

MIT

TER

S

ATU

RAT

ION

VO

LTA

GE

V

CE

sat

(V)

FOR

WA

RD

CU

RR

EN

T I

F (

A)

COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V)


(TYPICAL)


(TYPICAL)

VCC=600 V, VGE=±15 V, IC=150 A,, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C

SW

ITC

HIN

G T

IME

t r, t

d(on

) (

ns)

SW

ITC

HIN

G T

IME

t f, t

d(of

f) (

ns)

SW

ITC

HIN

G T

IME

(ns

)

EXTERNAL GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A)

0

0.5

1

1.5

2

2.5

3

3.5

0 50 100 150 200 250 30010

100

1000

0.5 1 1.5 2 2.5 3 3.5 4

100

1000

10000

10

100

1000

1 10 10010

100

1000

10000

10 100 1000

Tj =150 °C

Tj =125 °C

Tj =25 °C

Tj =150 °C

Tj =25 °C

td( on)

t r

t f

td ( o f f )

td ( on )

t r

t f

td ( o f f )

T j =125 °C

<IGBT Modules>



PERFORMANCE CURVES

BRAKE PART


(TYPICAL)


(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j =125 °C

VCC=600 V, IC/IF=150 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j =125 °C

SW

ITC

HIN

G E

NE

RG

Y (

mJ)

RE

VE

RS

E R

EC

OV

ER

Y E

NE

RG

Y (

mJ)

SW

ITC

HIN

G E

NE

RG

Y E

on

(mJ)

R

EV

ER

SE

RE

CO

VE

RY

EN

ER

GY

(m

J)

SW

ITC

HIN

G E

NE

RG

Y E

off

(m

J)

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω) FORWARD CURRENT IF (A)

DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j =125 °C Single pulse, TC=25 °C

Rt h( j - c ) Q=0.16 K/W, Rt h ( j - c ) D=0.26 K/W

t rr

(ns

), I r

r (

A)

NO

RM

ALI

ZED

TR

AN

SIE

NT

THER

MA

L R

ESIS

TAN

CE

Zth

(j-c

)

FORWARD CURRENT IF (A) TIME (S)

1

10

100

1000

0.1

1

10

100

10 100 1000

10

100

1000

1

10

100

1 10 100

10

100

1000

10 100 10000.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

I r r

t r r

E o n

E o f f

E r r

E o n

E o f f

E r r

<IGBT Modules>



PERFORMANCE CURVES

NTC thermistor part

TEMPERATURE CHARACTERISTICS (TYPICAL)

RE

SIS

TAN

CE

R

(kΩ

)

TEMPERATURE T (°C)

Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

0.1

1

10

100

-50 -25 0 25 50 75 100 125

<IGBT Modules>


© 2015 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.


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