> mitsubishi’s differentiation strategy > highlights of latest sic...

Gourab Majumdar, PhDSenior Fellow

Semiconductor and Device Group Mitsubishi Electric

Power Devices indispensable for Advancing Power Electronics

November 5, 2018Shenzhen, China

IEEE PEAC’2018 Plenary Session

Keynote Presentation

Contents:

1. Introduction: > Impact of global issues and importance of power electronics/devices > Status and future outlook on power electronics applications

2. Advanced power semiconductor technologies > Mitsubishi’s differentiation strategy > Silicon chip technologies> SiC chip technologies > Power module integrated functionalities and structural aspects > Highlights of latest SiC power module applications

3. ConclusionM-181025-01

0IEEE PEAC 2018 No Reprint Without Authorization

1© Mitsubishi Electric Corporation

Contents:



3. Conclusion

M-181025-01

IEEE PEAC 2018 No Reprint Without Authorization


Predominant Climate Change issue: CO2 Emission

Data : IPCC Fifth Assessment Report 2014

M-181025-01

NDCs: Nationally Determined Contributions

201432 Gton

About 5.5 to 6.0 Giga ton(17% to 18.5% of the total) was generated by Automobiles



Application of Power Electronics- status and future outlook -

Electric power generation

Electric power transmission & distribution

Electric power consumption(transport, equipment, appliances, etc.)

Expected growth area of PE application PE application growth depends on policy-makers motivation. Higher speed in establishing renewable sources, e.g. Wind, PV (x100s of GWs by 2025?) is essential.

Expected growth area of PE applicationPE application growth depends on advancement of new technologies, e.g.; HVDC/MVDC/LVDC

High growth area of PE applicationModerate and sustainable growth of power electronics application continues, driven by energy saving needs from consumption sides.

Power electronics (PE) technology is considered indispensable for building infrastructures featuring efficient energy usage, and contributing to protection of the environment.

[for the entire electricity supply-chain infrastructure]

M-181025-01



Transition of Inverter Technology - a barometer of power electronics' growth

M-181025-01



10 100 1K 10K 100K 1M

10

100

1K

10K

100K

1M

10M

100M

Operation Frequency (Hz)

MOSFET

Discrete IGBT

Thyristor

TriacApplication Trend

Bipolar Transistor

Module

Out

put C

apac

ity o

f PE

Syst

em (V

A)

GTOGCT

Si

IPMIGBT Module Unipolar SiC device

Bipolar blended SiC device ? SiC

AutomotiveInverterUPS

Power SupplyCommunication

Power Transmission

Large DriveTraction

SiC potentialGaN device ?

Si and SiC (GaN) devices: how they would likely share application arena

GaN potential

M-181025-01

The key perspective is

“Coexistence” for at least a decade

more.



Contents:



3. Conclusion

M-181025-01



Miniaturization- High-current-density packages- High-heat-dissipation substratesLonger life- Low-stress structure at heat cycle- Low-thermal-resistance materials

(bonding materials & encapsulants)Higher functionality- Integrated radiators- Incorporation of peripheral circuits

Power capacity

Large

HighCarrier frequency

SiC

SiCSi*

Switching power source, etc.

EV, etc.SiC

Traction/DC power transmission

Si: Balance performance and cost- Low power loss- Wide application range- High reliability

SiCTM: High performance for value-added applications

- Lower power loss (70% less than Si)- High-frequency switching (100kHz class)- High temp. operation (200 ºC class)

Chip developm

ent

Package development

High performanceLow

cost

Miniaturization Increased capacity

Next generation

Integrated water cooler

New structures

- Smaller packages- Less peripheral

circuits- Lower losses for

energy savings

- Easy installation- Industry-standard package- Incorporation of peripheral

functions

- Miniaturization & High power density

- Incorporation of cooling functions

- Operation in high-temp environments

Home appliances Industry / Renewable energy

Automotive

Traction / Electric power- Large current- High reliability- Industry-standard packages

Mitsubishi’s Differentiation Strategy

* Si： Silicon

Developing high-efficiency power devices (chips) and packages that match market needs are inseparable for differentiation

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Contents:



3. Conclusion

M-181025-01



Structural changes of IGBT cell design

Rated current density （exp. 1200V）40～50A/cm2 　　 150～180A/cm2

N- N- N-N-

N

Emitter

Collector

Gate

N+N+

P

N

Emitter

Collector

Gate

P

N

Collector

Planer IGBT Trench IGBT

P+ P+

Planer IGBT（Finer patterning）

N

CollectorP+

P

Trench-IGBT

Gate

Emitter

Gate

Emitter

N-

N

Collector

P

Gate

Emitter

CSTBT

（with Thin Wafer）

N

・Trench gate, IEGT (IGBT with IE effect), CSTBT, and thin wafer technology led to immense improvement of IGBT making it to be the core active power switch.

・Rated current density of the latest IGBT is four times higher than that of the 1st generation devices introduced in the mid-1980s

Source: G. Majumdar, et. al. CIPS – International Conference on Integrated Power Systems, March 2016, Nuremberg, Germany M-181025-01



0

5

10

15

20

25

30

1985 1990 1995 2000 2005 2010 2015 2020 2025

Rela

tive F

OM[n

orm

alize

d by

1st

Gen

.]

Fiscal year

175℃(Tj(max)=200℃)Under investigation

150℃Tj(operation)=125℃

Fine patternprocess

1st Gen.2nd Gen.

3rd Gen.

4th Gen.

5th Gen.Trench structure

CSTBT structure

1200V class IGBT

7th Gen.

6th Gen.

Thin wafer & fine pattern process

Figure Of Merit (FOM) = JC / {Von × Eoff}JC = Device’s rated current density ［A/㎝2 ］Von = On-state voltage [V] Eoff = Turn-off energy [mJ/pulse/A]

8th Gen.

ＩＧＢＴ1st Gen

’80 ’85 ’90 ’95 ’00 ’05 ’08 ’11 ’13

2nd Gen 3rd Gen 4th Gen 5th Gen 6th Gen Next step7th Gen

ＩＧＢＴ structure (1200Ｖ class）

’14

Key technologies

Loss reduction（ratio of 4 Gen. value）

Fine design-rule Tench-gate cell

100%

C

n- layer (Epi)n+ buffer layer (Epi)

CSTBT structureThin backside(ＰＴ->ＬＰＴ)

35% less

n- layer (no Epi)

np

n+ buffer layer

p+

C

GE

CS layer

Wafer thinning Design rule refining

50% less

np

p+C

GE

n- layer (no Epi)

n+ Buffer layer

Ultra thin wafer process Ultra-fine design rule

65% less

n- layer np

p+

C

GE

n+ Buffer layer

4th Gen ＩＧＢＴ 5th Gen ＩＧＢＴ 6th Gen ＩＧＢＴ 7th Gen ＩＧＢＴ

Si Power Chip Technology (IGBT)

Next step

M-181025-01



Keys1. Improve efficiency (Low loss) : Thinner N- drift layer2. EMC design easier : Better controllability of dv/dt with RG6th gen. 7th gen.

Keys1. Improve efficiency (Low loss) : Thinner N- drift layer2. EMC design easier : N+/P cathode structure

※RFC diode: Relaxed Field of Cathode diode

np

p+

C

GE

n+ bufferlayer

n- layern- layer

np

p+

GE

C n+ bufferlayer

Thicknesswafer,

Advancedprocesses

Power lossreduction

ThicknessWafer

(N buffer diode)

A

K

pn-

nn+

(RFC diode)

A

K

pn-

nn+ p

6th gen. 7th gen.

Enhancing Silicon chip Technologies

IGBT

Diode

PreviousPIN DiodeRFCDiode

0

10

20

30

40

50

60

70

80

1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

Eoff

[mJ/

pulse

]

VCEsat [V]

7th

Gen.

6.1th

Gen.

5th

Gen.

Company A

0

5

10

15

20

25

30

35

40

1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8VEC [V]

E rr[m

J/pu

lse]

7th

Gen.5/6.1th

Gen.

Company A

2

4

6

8

10

12

30 35 40 45 50 55 60

dv/d

t (of

f) [k

V/µs

]

Eoff[mJ/pulse]

RG=2Ω

RG=5.1ΩRG=7.5Ω

RG=10Ω

RG=2～10Ω

7th Gen. 6.1th Gen.

@max-dv/dt=10kV/µs

@max-dv/dt=10kV/µs @max-dv/dt=10kV/µs



Evolution of Si IGBT chips

Switc

hing

loss

Conduction lossNext step

7th Gen.

6th Gen.

5th Gen.

4th Gen.

3rd Gen.

6th gen 7th gen Next step

RC-IGBT*

(Merge functions)

RC-IGBT(Next step)

Ultra-thinning (higher performance & easier use)

Optimization of structure

IGBT chip (1200V industrial use)

* RC-IGBT： Reverse conducting IGBT

Combine IGBT and diode onto one chip to improve manufacturability

and module power density

Silicon Chip Technology Trend

Low costCooling conscious

Small footprintHigh density packaging

One rank upModule current

RAC / fan motor

Servo, PV (3-level) Motion control

xEV

Under consideration

Home Appliances

Industry

Automotive

TractionTransmission

Under development Under development

Under development

In mass-production

Ultra-thinning (higher performance & easier use)

p+ nn-np

n-

np

p+

Toward higher usability, performance and reliability(more room to improve until theoretical limit)

M-181025-01



SiC-MOSFET & SiC-SBD (600V – 3300V)Planner-gate ===================================== Refined Planar-gate Novel Trench-gate

Railcar traction inverter Dec. 2013

2015~SiC Expansion

1994~2004Technology development

2005~2009R&D effort validation

2010~2014Practical development & commercialization

SiC chip technology

SiC Module

Applications 50% loss reduction

70% loss reduction

90% loss reduction

3.7KW World’s firstJan. 2006

11KW World’s highestFeb. 2009

20KW World’s highestNov. 2009

1700V/1200ASiC hybrid Jan. 2010

Sample delivery July 2012

Mass production May 2013

Air conditioner Oct. 2010

PV power convertor Jan. 2011

APS for railcars Mar. 2013

CNC drive Dec. 2012

PV power convertor Jan. 2015

Increase production New technologiesNew applications

Solar farms Factory Automation

Locomotive Electric Vehicle

Building Equipment

Power transmission

Wind mills

Development of these modules and applications has been partially supported by Japan’s Ministry of Economy, Trade and Industry(METI) and New Energy and Industrial Technology development Organization(NEDO).

50A/600V DIPIPMTM for PV system

Mitsubishi’s SiC device R&D milestones

SiC Inverter

M-181025-01



600/650V 1200V 1.7kV 3.3kV 6.5kV

Mas

s pro

duct

ion

(4 in

ch)Te

chno

logy

stat

us

SBD

JBS

SBD

JBS

2nd Gen MOSFET

1st GenMOSFET

SBD-embedded

MOSFET

High Vth2nd GenMOSFET

Trench-gateMOSFET

JBS

For the next Gen HV module

JBS

2017/2018

SBD & JBS Diodes, and MOSFETs in Planar, Trench, SBD-embedded forms getting ready for advanced SiC-transistor Module and SiC-IPM applications

For high freq. high Vth applications

Und

er d

evel

opm

ent (

6 in

ch)

1st GenMOSFET

High Vth2nd GenMOSFET

SiC chip tech footprints by voltage class (2018)

2nd GenMOSFET

SBD-embedded

MOSFET

(NEDO R&D project)

SBD

1st GenMOSFET

Trench-gateMOSFET

As a standard Hi-Rel technology

M-181025-01



➢ MOSFET with built-in SBD* ⇒Smaller size- Mitsubishi Electric original technology where chip is

miniaturized by embedding SBD into MOS - Effective especially for high-voltage devices, and

approx. 60% chip area reduction for 3.3kV

➢ Trench MOSFET ⇒ Smaller size / Lower loss / High reliability

- Gate placed on wall of trench formed downward and cell density improved/refined with aim of lowest loss in the industry

- Original field alleviating structure employed to improve reliability

Item Si SiC Customer benefits Combined uses

Power loss 1 1/3 High efficiency, higher output andenergy savings

EVs, air conditioner, railways, and DC power transmission

High temp. operation 175℃ Tj>200℃ Reduced heat-dissipation fins EVs and special inverters

High-speed switch 30KHz Fc>100KHz High efficiency and smaller size Power sources and non-contact power supply

Features of SiC chips

Advancement of SiC chips

* SBD： Schottky barrier diode

Trench

MOSFET structure comparison

Chip area reduction by embedded SBD (image)

Planar MOSFET Trench MOSFETMOSFET with embedded SBD

n-type drift layern-type drift layer

Drain electrode

p-type well

n-type SiC substrate

Gat

e el

ectro

de

Gate electrode

n-type source

Source electrode Source electrode

n-type SiC substrate

Drain electrode

Continuous development of SiC to lower costs and improve performance

Forward-looking R&D is pursuing new-material power devices, such as vertical GaN and gallium oxide based power semiconductors, in addition to SiC-IGBT (currently, MOSFET)

Advancing SiC-MOSFET technology (2018)

M-181025-01



Contents:



3. Conclusion

M-181025-01



Reviewing the fundamentals of IPM Concept：Local monitoring and safe control of IGBT operation on a real time basis

Integrated Intelligence - A vital aspect for future growth of power devices

Integrated scheme for a fast over-current detection & a speed-controlled turn-off

Advantages:(1) Improvement of IGBT saturation voltage

=> Achieving lower power loss(2) Slowed over-current shutdown

=> Controlling voltage over-shoot and noise(3) Monolithic integration of drive and protection

circuit => Miniaturization

Operation by a simple unipolar power source

Advantages:(1) Simplification of driving circuit

=> Miniaturization(2) Fast turn-off at normal switching

=> Achieving lower power loss(3) Monolithic integration of drive and

protection circuit => Miniaturization

Fundamental concept of Intelligent Power Module (IPM)

M-181025-01



-User benefits-

◆ Easier unit layout for multi axis servo drive ⇒ Same height* and narrow width packages

◆ Higher reliability and lower weight ⇒ SLC-Technology

◆ Smooth trouble shooting⇒ Error mode identification

◆ Lower EMC⇒ Integrated switching control

◆ Over temperature, e.g. lock mode, protected⇒ IGBT on chip Tj sensor available

SW speed changing point

Low current area High current area

Normal dv/dt

Controlled dv/dt

Low dv/dt

SW loss: Eon

■Error mode identification (FO) ■Integrated switching control

50-450A/650V25-200A/1200V

G1-series Intelligent Power Module (IPM)

* A,B and D package are h=22mm

DC lock mode (VP IGBT)

Highest temperature spotCenter of IGBT chip

Tj sensingDiode

Location of Tj sensing DiodeCenter of IGBT chip

IR Camera temperature analysis

Control board

Heat sink

Can protect w/ On-chip-sensor !!

Latest Power Module for Industrial Use



DIPIPM growth: de facto for home appliances

All-silicon IPM solution in Transfer-Molded Package

CPU

Gate DriveLevel ShiftProtection

HVICAC line

MLVICGate DriveProtection

Load(e.g. compressor for

air-conditioner)

DIPIPMTM

Power Block

HVIC chip

All-silicon solution

LVIC chipTransfer-molding

Power chips (IGBT, Diode)

Frame

Configuration◆ 3-phase power circuit (IGBT + Diode)◆ Circuitry for IGBT gate drive, protection

and isolation (HVIC and LVIC)◆ Dual-In-Line type package outline

White goods

Energy saved by DIPIPM (RAC applications)

Total electric power consumption by Tokyo metropolitan homes

50G

(kW

H)

Estimated by Mitsubishi Electric

By applying DIPIPMs, billions of Room Air Conditioners (RAC) world wide have improved energy efficiency

On a yearly basis, energy saved amounts to more than twice the total power consumed by 8 million homes in Tokyo metropolitan

Significant Energy Saving Impact

21G

M-181025-01



DIPIPM: Wide Line up for Home appliances

Super miniDIP ver.65~35A/600V

0.2kW2kW5kW 0.2kW 2kW 5kWOutput power Output power

• Air conditioner• Air to Water

• Washer / Dryer• Fridge

• Dish washer• Fan

*:Under development


https://sozaikoujou.com/18735


DIPIPM: Wide Line up for Industrial use

1.5kW5kW 1.5kW 5kW 12kWOutput power Output power

• Inverter• Servo• Robot

• Commercial A/C

• Fan for Commercial A/C

12kW

*:Under development



Circuit Diagram and Functions

All necessary functions needed for general purpose inverters are integrated.

Control Board

RST

UVW

Output Currentand Temearture

Detection

DC -linkVoltage

Detection

Gate Drive

Signal Isolation

CPU●Ptotection: Short Circuit/ Ground Fault/ Over Temperature●Break Control●Dead Time Compensation●PWM Signal Genaration

Highly Integrated Power Module

M-181025-01Source: G. Majumdar, et. al. CIPS – International Conference on Integrated Power Systems, March 2016, Nuremberg, Germany



Integration & Heat Dissipation Aspects

M-181025-01



Features of J1 series Power ModuleDirectly cooled new power Module J1 series 40% footprint reduction 76% weight reduction 30% heat dissipation improvement

J1 series

(conventional)

Comparison of weight

J1 series

Conventional (TPM)

Comparison of footprint

30% reduction

(Electrified vehicle application)

M-181025-01



1980 2000 2010 2020 20301990

Insulation sheetTransfer molding

Insulation sheetTransfer molding*DLB connection

Al2O3 substrateＡｌ-Wire

Silicone Gel

Cur

rent

den

sity

*[A

.U.]

Al-fin integrated ＡｌＮ*ＤＬB connection

*ＤＰ-resin encapsulation

Insulated Material Baseplate

Future technologyHigher current density

Higher reliability

Power module current density trend

AlN substrateＡｌ-Wire

Silicone Gel

BIP IGBT(Planner)

Thinner lead flameＲＣＩＧＢＴ

SiCIGBT(Trench）７gen.～

Package technology

Chip technology

１

5

ＲＣIGBT

* Current density is a value in terms of 6in1

Year

*DLB : Direct Lead Bond *DP : Direct Potting

10

Automobile：T-PM

Automobile：J1-Series

Higher temperature

Merits forAutomobileApplication



-User benefits-

◆ Higher reliability and lower weight

⇒ SLC-Technology

◆ Easy designing for EMC with wider dv/dt controllability

⇒ 7th Gen. chipsets

◆ Suitable products for the system

⇒ Wide product lineup

Previous~ 6th structure

Silicone gel

SLC-Technology7th NX structure

■SLC's FeaturesReduce internal inductanceIncreasing reliability of thermal cycling

Resin

→ Single parts including resin insulation

After 7k cycles: Corner of Cu foil

Solder Cracking No Cracking Sign

NX type T-series and T1-series 7th Gen IGBT Modules

NX type 50- 600A/ 650V35-1000A/1200V

100- 600A/1700V

CeramicSolder

base plateInsulated Metal Baseplate

Latest Power Module for Industrial Use



solder Ag sinter

Au/Ag wire

Coating

Al Pin-Fin

Silicone gel

US weldLaser

Compression

Wiring

Cooler jacket integration

Epoxy (T-mold )Epoxy (DP)

Die attachment

Encapsulation

Substrate

Cu sinter

Cu wireAl wire

Ceramic (AlN/SiN)

DI (Direct Injection)

Cu/AlSiC PC-TIM

Insulation sheetIMB

(Insulated Metal Baseplate)

PCB embedded

Higher λ

Development

Current capability

Operation temperature

Thermal conductivity

Mechanical stress

Parasitic inductance

Embedding

High power density

Reliable package

Low thermal resistance

Robustness

Fast switching

Intelligent integration

TLP(Transient Liquid

Phase)

Focus Value

DLB(Direct Lead Bond)

Trends of package element technology

M-181025-01



Contents:



3. Conclusion

M-181025-01



SiC based advanced power module: SiC-IPM

Features☆ Low power loss operation☆ High frequency operation capability☆ Lower EMI ☆ Reliability enhanced by

embedded protection schemes

Integrated functions

Tch sensor

Current sensor

Source

Gate

SiC-MOSFET power chip/package(1200V, 75A)

TypeSpecifications

Sample nameVoltage Current Circuit

Hybrid SiC-IPM 1200V 75A 6in1 PMH75-120-S002

Full SiC-IPM 1200V 75A 6in1 PMH75-120-S002

SiC-IPM

Base plate size120x55mm

S

D

Over current detection

Over heat detection

Under voltage detection

GateDriver

Errorsignal

UV

OT

SC

GND

Vcc

In

Fo

SiC-MOSFET/Diode

On-chiptemp. sensor

Current sensorRTC

M-181025-01



Approx. 70% reduction of power dissipation compared to conventional type in case of full SiC-IPM

Comparison of switching energy Comparison of power dissipation

Conventional type：PM75CL1A120 (Mitsubishi L1 series)

0 10 20 30 40 50 60 70 80

Esw

(mJ/

puls

e)

IC,ID(A)

Hybrid SiC-IPM

Si-IPM

FullSiC-IPM

Condition：Vcc=600V Tj=125℃

approx.70％ reduced

Condition：Vcc=600V、lo=31Arms（equivalent for15kW inverter）、fc=15kHz; P.F.=0.9; Modulation=1;Three phase sinsoidal PWM; Tj=125℃

Si-IPM HybridSiC-IPM

FullSiC-IPM

Loss

[W]

FWDi_SWFWDi_DCTr_SWTr_DC

approx.25％

reduced

approx.70％

reduced

Performance of 1200V/75A SiC-IPM devices Application: 3-phase Motor Controls

The full-SiC solution can reduce losses drastically.M-181025-01



Rail Applications’ Requirements Energy saving concept based system designs Utilize underfloor space effectively by miniaturized inverters/converters

Propulsion InverterFull-SiC power module

(3300V 2in1)

SiCMOS

SiC-SBD

Limited space

Railway Application of High Power SiC Module

M-181025-01



電圧

モータ電流

理想正弦波

電圧

モータ電流

理想正弦波

Waveform of conventional inverter

Waveform of high frequency switching SiC inverter

Motor power loss improvement

Current

voltageIdeal sine wave

Current

voltage Ideal sine wave

harmonic loss reduction

Motor harmonic loss could be reduced by application of high frequency control based converter design using SiC power module

Current distortion

M-181025-01

Result of SiC application in railway (2)



By virtue of applying SiC power module, regenerative braking power of the traction system greatly expanded even with a smaller cooling fin.

Mechanical loss improvement Regenerative braking area expansion

speedBrak

ing

pow

er

high0

speedBrak

ing

pow

er

high0

Conventional braking system

Developed braking system

Mechanical braking

Regenerative braking

Mechanical braking

Regenerative braking

SiC helped to expand regenerative braking power

Regenerative braking power can return kinetic energy to catenary

Synchronous rectification Switching

deviceDiode

M-181025-01




motor harmonic loss reduction

Conventional inverter

Full-SiCinverter

Regenerative power expansion

Energy consumptioncomparison

Results on SiC power module

Drastic energy saving together with huge size/weight reduction by use of SiC power module M-181025-01




State-of-the-art 3.3kV LV100 SiC module with Advanced Integrated Assembly

Type Product Model Specification DimensionsLV100

(6kV isol.)Full-SiCModule FMF750DC-66A 3.3kV/750A/2in1 100×140×40mm3

New HF Film DC-link Cap integrated 3.3kV LV100 paired 3-parallel assembly

High Frequency Film Capacitor Tech2000Vdc / 130uF / 120Arms ESL < 10nH (per unit)

3.3KV LV100x3p SiC Module

HF Film Cap x 3p

Laminated Bus-bar

Snubber-less, fast transient surge protection possible

Mitsubishi & TDK Collaborative R&D



SiC Applied Powertrain for HEV (R&D work)

Power conversion system topology

M-181025-01



SiC Applied Powertrain for HEV (R&D work)

Full-SiC Power Module structural features

M-181025-01



Offshore substationLandOffshore

HVDC

Wind Power Generator

HVDC Transmission/Solid-state Transformer

<SiC Contribution>◆ Reduction of power loss

Downsizing of power unit / lower spaceEfficiency of system components

Prospective new application of SiC module

ExampleExample

SST

M-181025-01



Example

Wind power converter

Converter Inverter

Full-SiC

Higher conversion efficiency thanks to power loss reduction

Downsizing of filter/transformer thanks to high-frequency switching

<SiC Contribution>◆High frequency switching

Light weight on top of tower◆Reduction of power loss

Higher conversion efficiencyHeatsink size reduction

Transformer

Grid→G

Full-SiCFilter Filter

Full-SiC module contribute to reduce filter and transformer size by ~20% when double the switching frequency.

容量を入れる

M-181025-01

Prospective new application of SiC module



Contents:



3. Conclusion

M-181025-01



Conclusion1. Power electronics and Power semiconductors are expected to be appropriate

solutions for global issues such as climate change and energy efficiency.

2. Power electronic circuits make the system smaller and lighter and, therefore, provide the basis to improve efficiency.

3. Hybrid and Electric vehicles are solutions for higher fuel efficiency standards amid ever increasing concerns over CO2 emission, climate change and alarming reduction of fossil fuel reserve.

4. One of the key enabler of power electronics’ growth domain is power semiconductor, which is progressing rapidly to steer through and satisfy the environmental, social and economical requirements.

5. Mitsubishi Electric has provided power electronics systems, appliances and power devices contributing in improvement of energy utilization and conversion efficiency over several decades.

6. Power device evolution will continue in the future bringing in advanced packaging solutions, new functionalities compatible with IoT trends and new device technology platforms by use of WBG materials such as SiC and GaN.

M-181025-01


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