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TRANSCRIPT
GaAs
2011-2015 GaAs
6%
LED
RF
2013
AlGaN/GaN HEMT
200mm
CMOS AlGaN/GaN
SiC GaN
, SiC
GaN
GaAs
II-VI
536nm
InGaAs
MOSFET
2012 11
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AIX G5+
Anzeige_G5_5x8inch__210x297.indd 1 30.07.12 14:35
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A LEADING SUPPLIER OF PLASMA PROCESS EQUIPMENT
Advanced RIE, CVD, ICPfor Research & Production
+1 727 577 4999
Plasma-Therm
PTI_2_12 full pg Magnifying ad.indd 1 2/14/2012 5:09:15 PM
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Cover Story
Boosting battery life
- Chris Novak RFMD 3G/4G
Technology200mm CMOS AlGaN/GaN
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200mm Si substratesGaN HEMT ( )
GaN HEMT GaN HEMT Imec
200 mm GaN CMOS 200mm CMOS
GaN HEMT- Brice De Jaeger, Marleen Van Hove, Stefaan Decoutere; Imec
: SiC GaNSiC and GaN electronics: Where, when and how big?
SiC 30 GaNLED
GaAsGaN
SiC- Richard Eden, IHS IMS Research
HEMTEuropean efforts propel nitride devices to a new level
HEMTGaN AlGaN
InAlN AlGaN
GaN HEMT GaNMORGaN
- Sylvain Delage, III-V Lab
Lifting limitations in photovoltaics
MicroLink Devices(epitaxial lift-off technique) GaAs
1-3- Richard Stevenson
18
22
25
29
35
Contents2012 11
www.laytec.de
LayTec
LayTec AGBerlin, GermanyEmail: [email protected]
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ACT 1998 ACT ACT
/ / LED / ACT ACT
www.actintl.com.hk
About ACT International Media Group ACT International, established 1998, serves a wide range of high technology sectors in the high-growth China market. Through its range of products -- including magazines and online publishing, conferences and events -- ACT delivers proven access to the China market for international marketing companies and local enterprises. ACT's portfolio includes ten technical magazine titles and related websites plus a range of conferences serving more than 100,000 professional readers in �elds of semiconductor manufacturing, compound semiconductor, PV/solar energy, electronic design, electronic manufacturing, contamination control, laser/photonics, optical communications, LED technology and RF/microwave. ACT International is also the sales representative for a number of world leading technical publishers and event organizers. ACT is headquartered in Hong Kong and operates liaison of�ces in Beijing, Shanghai and Shenzhen. www.actintl.com.hk
(CSC) Compound Semiconductor
About Compound Semiconductor ChinaCompound Semiconductor China (CSC) is the sister title to Compound Semiconductor - the world's most respected and authoritative publication. It is also the unique and authoritative publication dedicated to the Compound Semiconductor industry in China, introduce advanced global technology information and manufacturing experience, support the growth of the industry in the China market. Our content covers the technology development of crystal characteristic, design of IC structure, and materials, equipment, software, metrology, facilities for manufacturing, as well as market analysis & trends.
Editorial
Industry News
Advertisement Index
14
17
38
39
40
41
42
43
744
6
2012 11 Contents
Market GaAs
Shifting landscapes in the GaAs industry- Richard Stevenson
RF 2013RF-embedded light bulbs lighting market in 2013- Phillip Maddocks, Market Analyst, Connectivity, IHS IMS Research
Research ReviewII-VI
Output power rockets for green II-VI lasers
Powerful QCLs stretch to shorter wavelengths
LEDA watertight explanation for LED droop?
InGaAsInGaAs nanowire transistors outstrip silicon
VCSELViolet VCSELs poised for action?
US researchers claim world's smallest laser
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| Editor's Note
SiC GaN
SiC 30
GaN
LED SiC
2001 SiC SiC
SiC
SiC GaN
GaN
GaAs
GaN
SiC
SiC GaN
(MOSFET)
(IGBT)
SiC GaN SiC
GaN
SiC
GaN
SiC GaN
SiC
(1700V 2.5kV 3.3kV 4.5kV ) GaN
1200V
SiC GaN
25 IHS IMS Research Richard Eden :
SiC GaN
Publisher Adonis Mak
Editor in Chief Sunnie Zhao
Editor Jerry Zhu
Publishing House ACT International B,13/F, Por Yen Bldg,
478 478 Castle Peak Road, Cheung Sha Wan,
13 B Kowloon, Hong KongTel: (852) 2838 6298Fax: (852) 2838 2766
BeijingTel/Fax: 86 10 64187252
ShanghaiTel: 86 21 62511200Fax: 86 21 52410030
ShenzhenTel: 86 755 25988571Fax: 86 755 25988567
UK Of�ceAngel Business
Communications Ltd.6 Bow Court,
Fletchworth Gate,Burnsall Road, Coventry,
CV56SP, UKTel: +44 (0)1923 690200Chief Operating Of�cer
Stephen [email protected]
Tel: +44 (0)2476 718970
© 2012
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| Industry News
www.compoundsemiconductorchina.net 2012 11 7
2020 LED2020
LED 2016 LED 200lm/W
LED LED
LED 2015
2016 2020 240 2011 2012 LED
66%
10 23
(IC China 2012)
12
2004 8
1984
LEDLED MOCVD 200 (
)
(MOCVD) LED
MOCVD
30mW 50mW
PL 520
515 - 530nm 50mW
5% 6% PL 520 510 - 530nm 30mW
3.8mm
MOLAS 2010
Karl-Heinz-Beckurts
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| Industry News
2012 11 www.compoundsemiconductorchina.net10
150 4H N150 4H N
150 150
100 150
Vijay Balakrishna 100 150
150
thinQ!TM SiC650V thinQ!TM SiC SiC
Qc x Vf SiC 30%
thinQ!TM PFC
PC UPS
/
650V( 600V) CoolMOSTM
NanoCalc NanoCalc
NanoCalc (1.0nm-250μm) 4 (
~200-1700nm) (400-850nm)
(250-1050nm) NanoCalc
Si-SiO2 10
NanoCalc
NanoCalc
OLED NanoCalc
TriQuint Richardson RFPDTriQuint Richardson RFPD Richardson RFPD (Tech Hub)
TriQuint TriQuint GaN
TriQuint 1999 2008
TriQuint 0.25 (GaN on SiC)
TriQuint 18GHz MMIC
Richardson RFPD TriQuint TriQuint
HPA ;
TriQuint 55W 3.5GHz 40W 6GHz 20W 12GHz 10W
18GHz
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| Industry News
2012 11 www.compoundsemiconductorchina.net12
( )
Primo SSC AD-RIE
2x 1x (
) Primo SSC AD-RIE
12 Primo TSV300E® 8 Primo TSV200E®
8 Primo TSV200E®
2.5D MEMS Primo TSV300E®
Solar Junction 44%Solar Junction ,
947 44% 2011 4 418 43.5%
(NREL)
Solar Junction A-SLAMTM
Solar Junction
Solar Junction IQE Solar Junction SJ3TM
SUNPATH Solar Junction 6 2013
MORITEX LED CompaVisTM
MORITEX CompaVisTM
LED 40 6
CompaVisTM LED MORITEX
CompaVisTM CompaVisTM
BluGlass RPCVDBluGlass RPCVD MOCVD
RPCVD RPCVD
RPCVD
BluGlass RPCVD
1x1017 BluGlass
MOCVD
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| Industry News
www.compoundsemiconductorchina.net 2012 11 13
HexaTech Tokuyama UV-C LEDHexaTech Tokuyama UV-C LED
LED UV-C LED
HexaTech Tokuyama (internal quantum ef�ciency)
UV-C LED
HexaTech Tokuyama Tokuyama
265nm 25mW UV-C LED 70%
Intematix RubyIntematix LED
LCD Ruby
LED
Intematix 8 274 215 Intematix Yi-Qun Li
LED
LED LED Intematix
GAL 98CRI 100 lm/W
imec10 imec
(GaN-on-Si)
imec 200mm Imec
2011 imec 200 mm 200 mm
imec CMOS
Azzurro Epistar 150mmAzzurro Epistar Epistar LED Azzurro 150mm
LED
Azzurro LED LED
LED ( 4nm )
150mm LED
Bridgelux 200mm 200mm
CMOS
ANADIGICS GaNANADIGICS, Inc. ACA2428 MMIC GaN ANADIGICS
1 GHz CATV ANADIGICS GaN
CATV
GaN ACA2428
ACA2428 GaN MMIC +58 dBmV 1 GHz 21 dB
50-1000 MHz
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| Market
2012 11 www.compoundsemiconductorchina.net14
CS Mantech
4 23-26
GaAs
GaAs
Strategy
Analytics Newton Eric Higham
GaAs 2010
35% 50 2000 GaAs
2008
GaAs 2000
GaAs
Higham 2011
GaAs (CS Mantech) GaAs
BiHEMT HBT pHEMTRichard Stevenson
| Market
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| Market
www.compoundsemiconductorchina.net 2012 11 15
19.1
16.3
168.2
4.1
4
3.6
3.3
2.4
2.3
20.8
Skyworks
RFMD
TriQuint
Avago Technologies
WIN
Anadigics
Hi�te
Sumitomo
M/A -COM
Mitsubish Elelectric
Others
1: Strategy Analyt ics : 2010 GaAsSkyworks RFMD TriQuint 50% 54.5
52 2015 GaAs
6%
RFMD Skyworks
GaAs Strategy Analytics
Skyworks 2008
Higham
2010
Skyworks 19.1% RFMD 16.3%(
1) (2011 )
Skyworks 22% TriQuint
15.1% RFMD RFMD
(Greensboro)
12.4% Higham
2011 WIN Semiconductors
6
2010 2011
68%
Higham 2011
80% 40%
Higham
2014 2015
GaAs
Higham
0.25W 10W
40W 80W
LDMOS
Higham GaAs
Skyworks David Aldrich CS
Mantech Hignam
GaAs
: 2G GaAs
1 GaAs
10 Aldrich
RF 15%
Aldrich
Aldrich Prismark Partners
3G
(PA) 8 13%
16%
Aldrich PA
Skyworks
17
RF
200 mW 500mW
3G/4G
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| Market
2012 11 www.compoundsemiconductorchina.net16
(Turbo-charging transistors)WIN Semiconductors CS
Mantech
PA InGaP/GaAs HBT
pHEMT LTE Bi-
HEMT
WIN Semiconductors PA
3G WCDMA/HSPA 4G LTE
2G GSM 2.5G GPRS/
EDGE HBT
WIN HBT
SiN
-
( 2)
50% - 360
10:1 -
3.6 V
HBT 7.5 V 5V
3GHz
BiHEMTWIN BiHEMT pHEMT HBT
PA
PA
BiHEMT H2W
BiHEMT pHEMT
PA
H2W 4G LTE
WIN
H2W BiHEMT
HBT4
pHEMT
HBT SiN
BiHEMT HBT 1.27V
130 DC 28V 14V
- -
pHEMT 0.95 mm
H2W 50% RF
WIN 9 m x 125 m
0.1 dB
H2W 0.05 dB
pHEMTpHEMT
GaAs
GaAs
pHEMT
pHEMT
WiFi
pHEMT 77GHz
SiGe
pHEMT
HBT
2 WIN -HBT HBT
HBT
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| Market
www.compoundsemiconductorchina.net 2012 11 17
2 013
RF
2012
IMS Research -2012
(Connectivity Opportunities in Lighting Controls – 2012
Edition) RF
2013 60 2017 1170
IMS Research
-2012
2010 2017
(
EMEA)
CFL
RF LED RF
CFL RF LED
Greenwave Reality Insteon LiFX IMS Research
RF 2013
40 2017 9
RF LED CFL
( RF )
LED
LED
CFL LED
2013 LED
23% CFL 215%
2017
app
RF
RF
Insteon 802.15.4
Greenwave Reality NXP JenNet-IP
NXP JenNet-IP
ZigBee® (ZigBee® Alliance)
LED -ZigBee Light Link
IMS Research
2012 2013
ZigBee
RF 2013
1. RF
2. RF
Phillip Maddocks, Market Analyst, Connectivity, IHS IMS Research
Source: IMS tcOhcraeseR -12
2010 2011 2012 2013 2014 2015 2016 2017
RF-Embedded LightBulbs
RF-Embedded LightBulb Controllers
Source: IMS tcOhcraeseR -12
2010 2011 2012 2013 2014 2015 2016 2017
Insteon
JenNet/JenNet-IP
ZigBee
Wi-Fi
Proprietary &Others
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| COVER STORY –
www.compoundsemiconductorchina.net18 2012 11
RFMD 3G/4GChris Novak
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| COVER STORY –
www.compoundsemiconductorchina.net 19 2012 11
Cisco
2016
80%
RF
RF
OFDM
-
1
RF
-
36
695MHz 3800MHz
RF
LAN(WiFi)
RF
-
PAR 2
PA 3
PAR PA
:
RF
1:
2: (PA R)
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| COVER STORY –
www.compoundsemiconductorchina.net20 2012 11
PA
-
PA PA
PA
EER
RF Micro Devices EER
(ET) RF
4
RF
RF
1)
PA
2)
Doherty
APT
PA
PA DC-DC
PA
5
ET 5
- PA
33:
(PAE)PAR
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| COVER STORY –
www.compoundsemiconductorchina.net 21 2012 11
4: (PAE)
5: RF PA PA (DC-DC )
PAR
DC-DC
PA ET
DC-DC
ET
PA
PA ET
DC-DC
APT PA
RF
PAR ET
PA
device
scaling
RF
RF
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| Technology – HEMT
22 2012 11 www.compoundsemiconductorchina.net
200 mm CMOS GaN HEMT
GaN HEMT
GaN HEMT
GaN HEMT
200mm CMOS
GaN
200mm
GaN
CMOS
200mm AlGaN/GaN HEMT
CMOS
GaN HEMT
Imec
Imec
GaN
200mm - AlGaN/GaN
4 6
MOVPE [1]
200 mm 111 AlGaN
AlGaN/GaN/
AlGaN
200 nm AlN
400 nm Al0.75Ga0.25N 400 nm
Al0.50Ga0.50N 1800 nm Al0.25Ga0.75N 150 nm GaN
10 nm Al0.25Ga0.75N
2 nm GaN
AlGaN
GaN 750 120nm
LPCVD Si3N4
200 mm
2DEG 18
Van-der-Pauw
2DEG Rsh 360�/sq
1 5% 48
200 mm CMOS AlGaN/GaN
GaN HEMT GaN HEMT Imec 200 mm
GaN CMOS 200mm CMOS GaN HEMT
1: CMOS 200mm
GaN
Brice De Jaeger, Marleen Van Hove, Stefaan Decoutere; Imec
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| Technology – HEMT
23 2012 11www.compoundsemiconductorchina.net
24
2DEG nS ~ 8.9e12 cm-2
μS ~1950 cm2V-1s-1
3 μm AlGaN/GaN/
AlGaN 1.15mm
0.725 mm
<= 50 μm
200 mm CMOS HEMT 1.15 mm
-35 5 μm
p
GaN
1e11 at/cm2
GaN AlGaN
10e11 at/cm2 200 Cl
2: 200mm 18
AlGaN/GaN 2DEG
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| Technology – HEMT
24 2012 11 www.compoundsemiconductorchina.net
GaCl3
1e11 at/cm2
HEMT GaN /
/
CMOS
1.0 �mm
AlGaN
BCl3/SF6
5nm AlGaN 1.25
0.15 �mm
4 �mm
20/100/20/60 nm / / /
N2 550 90s
AlGaN/GaN MISHEMT 200 mm GaN
AlGaN/GaN HEMT
60 mm
d-mode
e-mode e-mode
GaN
e-mode AlGaN/GaN
HEMT (MISHEMT)
e-mode MISHEMT AlGaN
e-mode
Al0.25Ga0.75N
BCl3 BCl3 0s
30s 60s 0nm
5nm 10nm BCl3
200 mm
Vth 1.0 V 0.2 V
MISHEMT
AlGaN
Schottky
15nm ALD
Al2O3 600V
5nm 650 LPCVD Si3N4
10nm ALD Al2O3 600V
Si3N4/Al2O3
[2] /
43
4: SEM -
- 8 μm
Si3N4.-
T
5: 200mm G a N
MISHEMT
3:
60s
ID-VGS
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| Technology -
25 2012 11www.compoundsemiconductorchina.net
SiC
30 GaN
LED
SiC 2001 SiC
SiC
SiC
SiC
GaN
GaAs
GaN
SiC
IMS Research
SiC GaN
(PFC) (UPS)
PV
SiC GaN
(MOSFET) (IGBT)
SiC GaN
SiC GaN
SiC
GaN
SiC GaN
SiC (1700V
2.5kV 3.3kV 4.5kV )
GaN
1200V
(PFC)
GaN
600V 650V
GaN
SiC
: SiC GaN
IMS Research( IHS ) Richard Eden
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| Technology -
26 2012 11 www.compoundsemiconductorchina.net
S i C
PFC 1200V
SiC
PFC
(PSU) SiC GaN
0.1%-1%
PSU
SiC
GaN
SiC GaN
UPS SiC
SiC GaN UPS
SiC GaN 5.1kVA
UPS SiC 5.1kVA
250kVA UPS
(HEV)
SiC
(IGBT)
SiC
SiC
SiC
SiC (JFET)
SiC (BJT)
GaN
SiC
GaN
SiC GaN
SiC
SiC
SiC
SiC
SiC
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| Technology -
27 2012 11www.compoundsemiconductorchina.net
2015
IE3 ( ) IE2
( )
IE2
IE2
IE3
SiC
SiC
GaN
SiC
SiC GaN
SiC GaN
0.5
SiC
SiC
SiC
600V SiC
GaN
5kW
GaN
600V (MOSFET) SiC
5kW SiC
900V 1200V
(IGBT) SiC
1200V
SiC
IGBT
1%
$1.5/
MW-h $1.5/MW-h SiC
SiC
SiC
30A
IGBT 100-150A
SiC
SiC
SiC
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28 2012 11 www.compoundsemiconductorchina.net
www.compoundsemiconductorchina.net
1700V
690V
SiC
24
690V
1700V
6.5kV
60
1200-1400A SiC
SiC
SiC
1%
SiC
SiC
34
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| Technology - GaN
www.compoundsemiconductorchina.net 29 2012 11
HEMT
GaN AlGaN
InAlN AlGaN
InAlN
InAlN/GaN
Al0.25Ga0.75N/GaN
3
GaN MORGaN
2008 11
9,200,000
13, 000,000
11 23
1
GaN/InAlN
MORGaN UltraGaN
2005
InAlN/GaN
InAlN/GaN
MORGaN
/
GaN
MORGaN
2 /
GaN HEMT
3.5GHz 6.6W/mm
70% InAlN/GaN HEMT
MORGaN
MORGaN
InAlN HEMT
700
bar
MORGaN
PH PH
HEMT
GaN HEMT GaNMORGaN
III-V Sylvain Delage
1: MORGaN
11 23
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| Technology - GaN
www.compoundsemiconductorchina.net30 2012 11
MORGaN
2 /
HEMT
GaN
GaN
InAlN/GaN HEMT
20GHz
500 Wm-1K-1
3.5GHz InAlN/
GaN HEMT 3.5GHz
6.6W/mm 70%
320W
(800 )
Element Six
GaN
4mm 4mm
Element Six
2
70μm 2μm
(111 )
( 100mm) 2
1000 Wm-1K-1
Bath
(111)/
AlN GaN GaN
350nm( 2)
EPEL CH FORTH
RF MBE
AlN 800nm GaN
GaN
HEMT
24nm Al0.28Ga0.72N 2nm
GaN ( 3)
731cm2V-1s-1
1.3x1013cm-2 770K
1740 2:
(111)(SEM )
3: (a) ( ) HEMT , (b) ( ) HEMT , (c) ( ) 1 m2x0.2x75 m3 HEMT (h21) (MSG/MAG) Vds=10V Vgs=-2.5 V
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cm2V-1s-1 1.4x1013cm-2
Rth 3.5K mm W-1 4H SiC
HEMT 2
Ulm
0.2 m ( 3b)
ft 21GHz fmax
42GHz( 3c) SiC
AlGaN/GaN
MORGaN
ELOG Bath
5 m
500 m 6 m
15 m
9 m (
)
SiN
double dogleg
ELOG
Bath Joseph
Fourier
( 4)
IEE Slovak
800
60bar
0.02%/bar
MORGaN
400
80bar
MicroGaN
AlGaN/GaN
Wheatstone
( 5)
300
4: HEMT
80 ba r
5: GaN
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www.compoundsemiconductorchina.net32 2012 11
pHMORGaN Ulm
(FET)
AlInN/GaN HEMT
AlInN/GaN HEMT
800
FET
Cu/Au PCB
Gwent Electronic Materials
PCB 48
( 6a)
55mV/
pH PH pH 20
mA/mm ( 6b) 0.05pH
GaN HEMT
700
HEMT
Ulm
1 m
HEMT
ft 16.8GHz fmax
6.4GHz( 7) MORGaN
HEMT1kW MORGaN
III-V
SiC 36mm
0.7 m HEMT ( 8)
SiC 2 m
GaN 10 m InAlN
6: (a) InAlN/
, (b)InAlN/
pH
7: 1 m
2x0.5x75 m3
HEMT(h21) (MSG/
MAG)
Vds=8V Vgs=-1V
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www.compoundsemiconductorchina.net 33 2012 11
10 s
2mm
13.2Wmm-1 (PAE)
70%
(PAE) 55%
Element Six
( 9)
SiC
100 m SiC
450Wm-1K-1
36mm
62
3.5 Wmm-1
173 ( 9b)
400 m
214
III-V Swerea IVF
FCubic
( 10) MORGaN
0.16 W-1
HEMT
2GHz 36mm
200W
250W
InAlN/GaN
320W
PAE 35%
8: (a) L S36mm
0.7 m HEMT( S E M
) (b) Pout = 41.2dBm (13.2W – 6.6 W/m m)
PA E 70%3.5GHz Vds=35V
Gp13.4dB ( 2mm
)
9: (a)100 m SiC
TM180 ()
36mm InAlN/GaN HEMT
C W3.5 W mm-1
62(b) (a)
(c) SiC400 m
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| Technology - GaN
www.compoundsemiconductorchina.net34 2012 11
PAE 55%
MORGaN
HEMT
MORGaN
MORGaN http://www.morganproject.eu
Europe turns to AlInN to push the limits of
transistor and sensor performance, Compound
Semiconductor Nov&Dec 2009, p.27
28
SiC
SiC
SiC
GaN
SiC
SiC
MOSFET 1200V
CMOSFET SiC
5-10
/
GaN
MOSFET
- GaN
48V
12V 48V
LED
GaN
GaN MOSFET
/
600V GaN
GaN
GaN
GaN
SiC GaN
1%
2021 30
9%
10: (a), (b)
200W L InAlN/GaN HEMT , (c) 36mm
2GHzPAE
10 s CW
: ; : PAE
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| Technology -
www.compoundsemiconductorchina.net 35 2012 11
MicroLink
Devices
2000
MOCVD
1-3
1cm2
(AM0) 31% (AM1.5)
33.9% 20cm2
1%
(UAV)
US Air Force Research
Laboratory
(GaAs)
MOCVD
Chris Youtsey
Youtsey
10 GaAs
100
MicroLinkepitaxial lift-off technique GaAs
Richard Stevenson
1: GaAs
5 AlAs
2:
GaAs
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| Technology -
www.compoundsemiconductorchina.net36 2012 11
1978 Tokyo
Institute of Technology
peeled film
GaAs 80 90
Bell Communications Research
Eli Yablonovitch AlAs GaAs
15
Radboud University John Schermer
Youtsey
GaAs TriQuint
2011
1400 4
1500 Youtsey
MOCVD
InGaP GaAs InGaAs
5
AlAs
AlAs GaAs 105
12
GaAs
National Renewable
Energy Laboratory
InGaAs 0.9eV 1.1eV
1.42eV GaAs
3: GaAs AlAs GaAs
4: 4
2 20cm2
5:
6 GaAs 61cm2
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| Technology -
www.compoundsemiconductorchina.net 37 2012 11
1.88eV 2.00eV Al InGaP
Youtsey
25
1cm2
Youtsey
InGaP GaAs
InGaAs
Glenn NASA Glenn
AM0 1cm2 20cm2
29%
30
400W/kg
Youtsey 150
Youtsey
6 GaAs
61cm2
Youtsey
Youtsey
InP
InP
InP GaAs
CHINASSL2012 LEDLED CHINASSL2012
CHINASSL2012 11 5-7 7 LED
· LED
Megaman Samsung
LED
· LED
CHINASSL2012 !
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| Research Review
www.compoundsemiconductorchina.net38 2012 11
(Be)
II-VI
(Hitachi)
(AIST)
70mW
Sony 2010 545nm
1.5mW
InGaN Be
AIST Ryouichi Akimoto
InGaN
- -
530nm
InGaN
In
Nichia( )
510-520 nm
GaN
c Sumitomo
GaN
530 nm
GaN
GaAs [
Be
] II-VI
InGaN
, Akimoto
90 GaN
II-VI
500
Akimoto
1990 ZnSe
Be
Akimoto : 2000
II-VI
536 nm
p
Ti/Pt/Au
AuGe/Ni/Au
800 μm 7 nm
BeZnCdSe
2 μm
90% 25
CW
55 mA 9.8 V
118 mA 50 mW
70%
70 mW
Akimoto
p
p
5 V
Akimoto
50 mW
2000 5V
1 kA cm-2
Akimoto
p
BeZnCdSe
S. Fujisaki et al. Appl. Phys. Express 5
062101 (2012)
II-VI
536nm
Hitachi AIST 536nm 70mW
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| Research Review
www.compoundsemiconductorchina.net 39 2012 11
(Northwestern University)
(QCL, Quantum Cascade
Laser)
(Corning) 2011 40 mW
3.55 μm
InP AlInAs/GaInAs
3.39 μm
504 mW 3.56 μm 576 mW
- 3.3 – 3.6 μm
ManijehRazeghi
, 3.0 – 3.5 μm
3 μm
(Interband Cascade Laser)
Razeghi
InAs/AlSb/InAs
GaInAs/AlAs(Sb)/InP GaInAs/AlInAs/InP Razeghi
Sb InP Razeghi
Sb
3 μm
GaInAs/AlInAs InP
505-520 meV
6 μm
InAs GaInAs AlAs AlInAs
InP
InAs AlAs (
) Razeghi
1 eV
3.39 μm 8.6 μm 5
mm 100 kHz 500 ns
1.1 W 15 25
55 504 mW 403 mW 88 mW
3.56 μm 10.5 μm
1.66 W
15 25 55
576 mW 437 mW 45 mW
Razeghi
Razeghi
N. Bandyopadhyay et al. Appl. Phys. Lett. 100 212104 (2012)
500 mW 3.4 μm
ManijehRazeghi InP
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| Research Review
www.compoundsemiconductorchina.net40 2012 11
LED
(Rensselaer Polytechnic
Institute, RPI)Fred Schubert LED
LED
( LED
)
Schubert
GaN AlGaInP
, Schubert
LED
(Auger
Recombination)
Schubert
10-31cm6s-1
, Schubert
p
LED
p-n
GaN
p
LED
Schubert ,
: ( 1)
InGaN led
LED - ( 2)
LED
448 nm 451 nm
ABC
Schubert
G.-B Lin et. al. Appl. Phys. Lett. 100 161106 (2012)
LED
1 InGaN LED
exp(-hv/kT)
2 ABCSchubert
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| Research Review
www.compoundsemiconductorchina.net 41 2012 11
InGaAs
MOSFET
Compound Semiconductor
III-V
MOSFET
FinFET
Intel IBM
Hokkaido
KatushiroTomioka
2009
GaAs
Tomioka
CMOS
InGaAs Ge Intel
III-V
CMOS
10 InGaAs As
- -
Tomioka
(BCB)
BCB
InGaAs
-
InGaAs InP InAlAs
InGaAs
InGaAs
MOSFET
p
Tomioka
P.18-35 P.38-44
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| Research Review
42 2012 11 www.compoundsemiconductorchina.net
Santa Barbara (UCSB)
(VCSEL)
(pico-projectors)
S. Nakamura D. Feezell C. Holder S.
DenBaars VCSEL m
GaN (MOCVD)
GaN GaN
c Nakamura
c (AlGaIn) N 1996
c
c GaN
Nakamura
m
UCSB
GaN m 2005
GaN 2007
GaN 2009 Nakamura
GaN VCSEL
VCSEL
VCSEL
VCSEL
GaNVCSEL
2007 Ecole (EPFL)
AlInN/GaN VCSEL
Nichia GaN VCSEL
VCSEL
VCSEL m
Ecole Novagan Eric
Feltin c
Santa Barbara m
c
Nakamura
(Mitsubishi Chemical) m
LED Feltin
m c
Nakamura VCSEL
VCSEL
Nakamura (DBR)
VCSEL
VCSEL
VCSEL 70mA
10 19 (microW)
Nakamura
VCSEL
Shuji Nakamura (VCSEL)Compound Semiconductor Nakmura
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| Research Review
43 2012 11www.compoundsemiconductorchina.net
Austin (UTA)
GaN
UTA Chih-Kang Ken Shih
Shih Charlotte Sanders
Science
(GaInN)
GaInN
Shih
(MBE)
ShangjrGwo
500 mW 3.4 μm
60mm 60 1mm 1.5μm
0.75μm 10μm
1μm
VGS = 8V VDS = 10V
6A 200mm AlGaN/GaN
HEMT
150mm
8A 750V Ron,sp
2.9 m��cm2 600V 7μA [2]
200mm
:
CMOS 200mm CMOS
AlGaN/GaN HEMT
200mm 1.15 mm
AlGaN/GaN/AlGaN
CMOS
GaN
e-mode AlGaN/GaN MISHEMT
60mm 6A
GaN
1. K. Cheng et al., AlGaN/GaN/AlGaN Double Heterostructures
Grown on 200 mm Silicon (111) Substrates with High Electron
Mobility, Appl. Phys. Express, Vol. 5, p. 011002 (2012).
2. M. Van Hove et al., CMOS Process-Compatible High-
Power Low-Leakage AlGaN/GaN MISHEMT on Silicon ,
IEEE Electron Device Lett., Vol. 33, No. 05, p. 667 (2012).
3. B. De Jaeger et al., Au-free CMOS-compatible AlGaN/GaN
HEMT processing on 200 mm Si substrates , in Proceedings
of 24th International Symposium on Power Semiconductor
Devices and ICs , Bruges, Belgium, 3-7 June, 2012, p. 49.
24
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2012 11 www.compoundsemiconductorchina.net44
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