02 elements 05 - rfid-systems · 02 elements 2nd unit in course 3, rf basics and components...
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02 Elements02 Elements2nd unit in course 3, 2nd unit in course 3, RF Basics and ComponentsRF Basics and Components
Dipl.-Ing. Dr. Michael Gebhart, MSc
RFID Qualification Network, University of Applied Sciences, Campus 2WS 2013/14, September 30th
page 2
ContentContent
Electrical Elements overview- Inductance
- Capacitance
- Resistance
The complex frequency domain- RF system properties of a parallel resonance circuit
Laplace Transformation- H-field in time-domain, as emitted by the ISO/IEC10373-6 PCD antenna
Electrical Components
How to characterize impedance at HF
Example: Dependencies of a “bad inductor” for NFC
page 3
sCZ
1=
sLZ =
Cj
CjZ
ωω
11−==
RZ =
LjZ ω=
RZ =
jBGYjXRZ +=+=
R
jX
R
R
jX
jωL
R
jX
-jωC
1
U
I
θθθθ
U
I
θθθθ
U
I
θθθθ
( ) ( )00 cos ϕω += tIti
( ) ( )00 cos ϕω += tUtu
( ) ( )00 cos ϕω += tIti
( ) ( )°++= 90cos 00 ϕω tUtu
( ) ( )00 cos ϕω += tIti
( ) ( )°−+= 90cos 00 ϕω tUtu
u(t)
i(t)t
t
t
u(t)
i(t)
i(t)
u(t)
Electrical Elements in overviewElectrical Elements in overviewsymbol impedance phasor signal tracessignals
page 4
What is the Element Inductance?What is the Element Inductance?
Let us consider two current-carrying conductor loops, and time-variant current:
- The current i1 in the first loop generates a magnetic flux Φ of the flux density B1.
- A part of the primary flux penetrates the second conductor loop.
- This generates a 2nd current, which compensates the part of the primary flux.
C1..…circumference of 1st area
A1..…area enclosed by the 1st conductor
i1...…current in the 1st conductor
....…normal vector to the area A1
...…magnetic flux density vector
( ) ArotBforsdPAdAnBA C
rrro
rro
r===Φ ∫ ∫ ∫
2 2
22222
Br1nr
..…magnetic vector potentialAr
page 5
What is the Element Inductance?What is the Element Inductance?
- All contributions to the flux across an area are directly proportional to the
currents in the individual conductor loops, e.g.
2221212 LILI +=Φ
∫ ∫==
1 212
1202112
4C C
R
sdsdLL
ro
r
π
µ
- L with same indices means
self-inductance.
- L with different indices means
mutual inductance.
Resolving the proportionality value, we find
- For the mutual inductance…
- For the self-inductance…( )
22
22
22
2
022
2 24
sddVR
PS
IL
C V
ro
r
∫ ∫∫∫′
′=
π
µ
page 6
Examples:Examples:
As ferrite material has an increased relative permeability µR compared to free
space (where µR = 1), the flux density B is increased.
Consequently, Inductance L is increased for a conductor loop near ferrite.
sA
mVwhereHB R
7
00 104 −=⋅⋅= πµµµ
As metal allows ring currents (eddy currents) equal to a closed conductor
loop, Inductance L is decreased for a conductor loop near metal.
…where j expresses the 90 °phase-shift
page 7
What is the Element Inductance?What is the Element Inductance?
- We can understand inductance as “inertia of current”, it is the time-variant
“resistance” which the conductor offers to a time-variant current.
- Inductance results from the relation of time-variant magnetic flux and current to
dI
dL
Φ=
- All the magnetic flux Φ generated by the current i is directly proportional to the
actual value of i.The proportional value is inductance L
( ) ( )di
dN
di
dL
dt
diL
dt
di
di
dN
dt
tdtui
Φ−=−=→−=⋅
Φ−=−=
ψψ
LXforjXIU LL ω=⋅=
- For harmonic sine-wave signals (considering no offset or transient condition) we
can express the derivation by amplitudes, for complex network calculations:
Φ= Nψ…or for the coil flux (N turns)
page 8
E.g. mutual inductance of circular coilsE.g. mutual inductance of circular coils
( )
( )α
α
αµ π
drrrrx
rrM C ∫
−++
⋅⋅=
2
0 21
2
2
2
1
2
210
cos2
sin
2
For the simple geometry of circular coils, an exact calculation is possible:
MC..…mutual inductance in Henry (H)
µ0..…permeability constant
r1...…radius of the 1st coil in meters
r2 .…radius of the 2nd coil in meters
x……distance of the coil centers in meters
α ...…tilt angle of the coil axes
( )322
1
2
22
2
110
2 xr
rNrNM CA
+
=π
µ
- Moreover, for coaxial coil orientation (same axis), this simplifies to
AmVs7
0 104 −⋅= πµ
page 9
Coupling factorCoupling factor
- In network calculation, the coupling factor k represents the connection of a coil
arrangement.
- It is a pure geometry factor, as the other parameters cancel out.
- It results from the relation of mutual inductance M between two coils, and the
inductance L of the two coils:
MMMforLL
Mk ==
⋅= 2112
21
- E.g. resolving the equation for circular coils in coaxial orientation, we find…
( )322
121
2
2
2
1
xrrr
rrk
+⋅
⋅=
page 10
What is the element Inductance?What is the element Inductance?
Inductance (L) is a property of conductors and coils, relating
time-variant voltages to currents.
I
NL
Φ=
π
µµ
8
0lL R=…for the straight conductor…in Henry (H)
…where µ0 is the permeability constantAm
Vs7
0 104 −⋅= πµ
Inductance also is an energy (W) storage and thus can be defined
22
2
ˆRMS
IM LI
iLW ==
Complex network calculation (without pre-charge)
sLIU ⋅=
( ) ( )∫∞−
=t
dttuL
ti1
( ) ( )dt
tdiLtu =
sL
UI =
)(ˆ: amplitudevaluepeakthemeansiNote
…for the long coill
ANL R 02 µµ
=
page 11
What is the element Capacitance?What is the element Capacitance?
Capacitance (C) is the ability of a body to store an electrical charge (q).
Typically two conductive plates of area A in distance d store the charge +q
and –q. Capacitance is then given by
U
qC =
d
AC R 0εε=…for the plate capacitor…in Farad (F)
…where ε0 is the electric field constantm
F12
0 10854.8 −⋅=ε
Capacitance also is an energy (W) storage and thus can be defined
22
2
ˆRMS
CE CU
uCW ==
Complex network calculation (without pre-charge)
sCIU
1⋅=( ) ( )∫
∞−
=t
dttiC
tu1
( ) ( )dt
tduCti = sCUI ⋅=
)(ˆ: amplitudevaluepeakthemeansuNote
page 12
What is the element Resistance?What is the element Resistance?
Resistance (R) of an electric conductor represents the loss
of effective power, when the conductor carries current.
Conductor materials have a specific conductance σ in S/m.
Resistance is given by
A
lR
⋅=
σ…in Ohm (Ω)
Complex network calculation (there cannot be any pre-charge)
( ) ( )tiRtu ⋅=
( ) ( )R
tuti =
RIU ⋅=
R
UI =
Resistance also means loss power (P)
( ) ( ) tituWRIR
UIUP ⋅==⋅==⋅= ReRe2
2
page 13
The complex frequency domainThe complex frequency domain
Properties of a network can be presented in the complex frequency (s) plane
ωσ js +=
Amplification orAmplification or
AttenuationAttenuationOscillation Oscillation
frequencyfrequency
This requires polynomial analysis of the network
function G(s)
jω
σ
stable half-plane
(σ < 1)
( ) ( )( )×
=polesresonancesparallel
zerosresonancesserialsG
,
, o
page 14
Considering a parallel resonance circuitConsidering a parallel resonance circuit
As an application for complex network calculation, let us consider a parallel
resonance circuit:
sCZ
1=sLZ =
GR
Y ==1
LRC
Antenne
PPPui
RZ =
sLY
1= sCY =
- This could be a simplified loop antenna fed by induced AC voltage in
alternating H-field.
- Impedance Z and Admittance Y is given in the Laplace Domain.
( )
Cs
LCRCss
sCsLR
sY1
11
112 ++
=++=
- We find the poles as solution to
the characteristic equation…
page 15
Impedance in the complex frequency domainImpedance in the complex frequency domain
LCRCRCs
1
2
1
2
12
2,1 −
±−=
σ
jω
C
L
R2
1cos
1
LC
10 =ω
2
2
11
−=
RCLCjj dω
2
2
11
−−
RCLCj
RC2
1−
- Impedance Z as the inverse of admittance
is given by…
( )( )
LCRCss
Cs
sYsZ
11
1
1
2 ++
==
- Natural angular frequency
(un-damped self-resonance)
- Attenuation coefficient
- Quality factorσ
jωS-Ebene
page 16
RF System propertiesRF System properties
2
2
02
111
−=−=
RCLCjjj d ζωω
0ωj
LC
10 =ω
0ζω−
( )
=
C
L
R2
1cos
1
cos
1
ζ
- A comparison to the general (damped) wave equation results the following
RF system properties for this LCR-network:
022
00
2 =++ ωζω ss
LC
12
0 =ω
C
L
RRC 2
1
2
1
0
==ω
ζ
0
04
1
2
1
ωζ RCQ ==
( )
LCRCss
Cs
sZ11
1
2 ++
=
- Wave equation
page 17
LaplaceLaplace--TransformationTransformation
u(t) U(s)
Laplace Transformation
time-domain frequency-domain
G(s) g(t)
network function impulse response
inverse
Laplace Transformation
∫∞
−⋅==0
)()()( dtetftfLsFst
∫+∞
∞−
− ⋅⋅== ωπ
desFsFLtfst)(
2
1)()( 1
The Laplace Transformation corresponds between time-domain and complex
frequency domain. Can be applied on signals and networks.
page 18
LaplaceLaplace--TransformationTransformation
The Laplace Transformation corresponds between time-domain and complex
frequency domain. Can be applied on signals and networks.
Historical Note:
Pierre Simon de Laplace (1749 – 1827) did not invent the Laplace
transformation, but a specific “Laplace Integral”.
The Laplace Transformation is a further development of Oliver Heavisides
calculation concept. It is more general than the Fourier-Transformation.
page 19
Option 1:
1. Transformation of the input time-function into
the complex frequency-domain.
2. The output function is the product of input
function and network function.
3. Inverse Transformation to get the output
time-function.
)()( tuLsU ee =
)()()()()( tuLsGsUsGsU eea ⋅=⋅=
)()()( 1tuLsGLtu ea ⋅= −
Option 2:
1. Transformation of the network function into
time-domain (= impulse response).
2. The output function is the convolution of input
time-function and impulse response.
It is possible to calculate signals at the output of a network, by applying Laplace
Transformation on input signal u(t) and network function G(s).
How to calculate network output signalsHow to calculate network output signals……
page 20
Example: Example: HH--field signal of the ISO/IEC10373field signal of the ISO/IEC10373--6 PCD6 PCD
Component valuesLA....480 nH
RDC....0.14 Ohm
C1.....47 pF
C2.....180 pF
C3.....33 pF
C4.....3 - 30 pF (selected 17 pF)
RE.....0.94 Ohm
RD.....Driver Impedance (50 Ohm)
D
DCEA
DCEA
DCEA
DCEA
DCEA
DCE
RCCCRRsL
RRsL
sC
CCCRRsL
RRsL
RRsL
RRsG
++++++
+++
+++++
++
⋅++
+=
1))((
1
1))(()(
4321
432
page 21
Example: Example: HH--field signal of the ISO/IEC10373field signal of the ISO/IEC10373--6 PCD6 PCD
Digital Sampling Osc.Calibration Coil signal
H-field, Mod. Envelope shape
Arbitrary Waveform Gen.
PCD
RF signal in
)()( tuRti aEA ⋅=
)()()( 1 tuLsGLtu ea ⋅= −
Input signal (command modulated on RF carrier)
Output signal, distorted by resonant antenna
Note: current corresponds to H-field
page 22
Electrical ComponentsElectrical Components
Components are the practical implementation of lumped elements.
Main properties (elements) are associated with parasitic elements:
Surface mounted devices (SMD) have the least (minimum) parasitics.
Electrical dependencies
- Frequency dependency (e.g. dispersion)
- Power dependency (e.g. saturation), …
Ambient (physical) dependencies
- Temperature, humidity (e.g. aging), pressure, …
Try to characterize under operating conditions!
Resistor Capacitor Inductor
page 23
ResistorResistor
SMD resistors offer an excellent representation of the element resistance.
Values are available in logarithmic distance for a decade.
normreihen specified in ISO 60063:
- E3, E6, E12, E24, E48, E96 and E192.
Individual values k are calculated by
where n specifies the number of elements per decade m.
- e.g. E12:
Package sizes specified in inches
- e.g. 1206, 0804, 0603, 0402, 0201
n mk 10≅
2.810...,,5.110,2.110,110 12 1012 212 112 0 ≅≅≅=
means 2.0 mm long and 1.25 mm wide
Package Length Width
mm mm
1206 3,2 1,6
804 2 1,25
603 1,6 0,8
402 1 0,7
201 0,5 0,3
page 24
CapacitorCapacitor
Capacitors can be a similar good representation of the element capacitance, if
the dielectric material is choosen right. COG or NP0 for SMD are good HF Caps.
The Electonics Industries Alliance (EIA) standardised 3 capacitor classes:
- Class 1: HF capacitors (typically ceramic) with high parameter stability
- Class 2: High volume efficiency capacitors (for buffers,…)
- Class 3: Volume efficiency ceramic caps (typ. – 22…+ 56 % cap over 10...55 °C)
- Class 4: Semiconductor caps
Class 1 ceramic capacitors are classified for temperature dependency in a
frequency range
- IEC/EN 60384-8/24 means 2-digit code, EIA RS-198 means 3 digit code
- NPO means zero gradient and +/-15 x 106 / K tolerance. EIA code is C0G,
IEC/EN code is C0
The EIA ceased operations in 2011, the Electronic Components Industry
Association (ECIA) will continue EIA standards maintenance.
page 26
InductorInductor
Inductors are critical / problematic components.
Coil inductors preferred to chip inductors (more stable properties)
Attention to current under operating conditions (e.g. 100 mW ... 1 W RF power)
Losses due to parasitic DC resistance (e.g. 0.5 … 5 Ω for 1 µH in 0805 package)
– Q-factor!
Attention to frequency and power dependency of inductance
Attention to thermal stress
Take care of coupling in layout
page 27
HowHow to to characterize impedancecharacterize impedance at HF at HF
RF out
R A B
Analyzer Amplifier Directive Coupler DUT FixtureAttenuator
Notebook Remote
Control
CPRP
CC
CC
YZZ
1
1
10 =
Γ−
Γ+=
PPPC
CPGjBGY
ZR11
Re1
ReRe =
+=
==
ωπ
B
ZfYC
CMEASC
P =
−=
=2
1Im
1Im( ) ( ) 22
PSPSP
PSDUT
CRRRR
RUU
ω++=
The voltage on the DUT is calculated
with a voltage divider (50 Ohm sourceand measured load impedance), from
a previously measured output voltage
to 50 Ohms.
An extended setup for network analysis is used to characterize
impedance over frequency and voltage - also in the operating
point and up to destruction levels.
page 28
Example – Chip Inductor (560 nH)
In order to possibly extract an equivalent circuit of the inductor, a frequency
sweep of the inductance was made at 4 different power levels.
Huge frequency and power dependency, extraction to typical equ. circuit is notnot possible!
page 29
At 13,56 MHz the inductor shows a significant differencesignificant difference to specified inductance
InductanceInductance and and resistance are voltage dependentresistance are voltage dependent!!
Matching impedance measurement @ 1mW and operation @ 500 mW will be different
630 nH630 nH
1,7 Ω1,7 Ω
780 nH780 nH
7 Ω7 Ω
~ 7,5 V(rms)~ 7,5 V(rms)
Example – Chip Inductor (560 nH)
page 30
Measurement of the matching impedance Smith Chart frequency sweep for power steps
VoltageVoltage @ 13,56 MHz @ 13,56 MHz in in MatchingMatching NW NW isis < 0,01V< 0,01V(RMS)(RMS)
Frequency Sweep @ - 45 dBm
13,56 MHz
page 31
Measurement of the matching impedance Smith Chart frequency sweep for power steps
Voltage @ 13,56 MHz in Matching NW is 0,03 V(RMS))
Frequency Sweep @ - 45 dBm
Frequency Sweep @ - 30 dBm
13,56 MHz
page 32
Measurement of the matching impedance Smith Chart frequency sweep for power steps
Voltage @ 13,56 MHz in Matching NW is 0,133 V(RMS) = 0,934 V(pp)
Frequency Sweep @ - 45 dBm
Frequency Sweep @ - 30 dBm
Frequency Sweep @ - 10 dBm
13,56 MHz
page 33
Measurement of the matching impedance Smith Chart frequency sweep for power steps
Frequency Sweep @ - 45 dBm
Frequency Sweep @ - 30 dBm
Frequency Sweep @ - 10 dBm
Frequency Sweep @ 0 dBm
13,56 MHz
Voltage @ 13,56 MHz in Matching NW is 2,5 V(RMS) = 7,08 V(pp)
page 34
Measurement of the matching impedance Smith Chart frequency sweep for power steps
Frequency Sweep @ - 45 dBm
Frequency Sweep @ - 30 dBm
Frequency Sweep @ - 10 dBm
Frequency Sweep @ 0 dBm
13,56 MHz
Power Sweep @ 13,56 MHz
page 35
Measurement of the matching impedance Smith Chart power sweep @ 13.56 MHz
ImpedanceImpedance in in operationoperation
ImpedanceImpedance in in measurementmeasurement
ImpedanceImpedance in in operationoperation …… 28,3 + j 23,9 28,3 + j 23,9 ΩΩ @ 3,52 V@ 3,52 V(RMS) (RMS) = 9,95 V= 9,95 V((pppp))
ImpedanceImpedance in in measurementmeasurement…… 16,36 16,36 –– j 5,43 W @ 0,13 Vj 5,43 W @ 0,13 V(RMS) (RMS) = 0,37 V= 0,37 V((pppp))
Power Power level forlevel for permanent permanent damage reacheddamage reached
page 36
Emitted equ. hom. H-field at CalCoil in 10 mmPower sweep into network with (left) and without EMC inductor (right)
No power dependency in the remaining network, only caused by the EMC inductor
Same H-field emitted at 131 mW than at 640 mW
Impedance withImpedance with EMCEMC
RpRp ~ 17 ~ 17 …… 88 88 ΩΩ
CpCp ~ 230 ~ 230 …… -- 220 220 pFpF
Impedance withoutImpedance without EMCEMC
RpRp ~ 860 ~ 860 ΩΩ
CpCp ~ 113 ~ 113 pFpF
Almost linear increase of H with sqrt (RF Power)
P = U² Rp ~ 640 mWP = UP = U²² RpRp ~ 131 mW~ 131 mW Impedance, RF power & H-Field