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EEEB273 – Electronics Analysis & Design II Lecturer: Dr Jamaludin Bin Omar 6-1 MOSFET Differential Pair Reference: Neamen, Chapter 11 (6) Learning Outcome Able to: Describe the mechanism by which a differential-mode signal and common-mode signal are produced in a MOSFET differential-amplifier. Describe the dc transfer characteristics of a MOSFET differential-amplifier. 6.0) Essential Formulas Region NMOS PMOS Saturation v DS v DS v SD v SD Transition Point v DS v GS V TN v SD v SG V TP 2 ] [ TP SG p D V v K i + = 2 ] [ TN GS n D V v K i - = ox ox ox p ox p p n ox n n t C L W k L W C K L W k L W C K ε μ μ = = = = = 2 2 2 2 ' ' μ n , μ p Mobility of electrons, holes ox Oxide permittivity t ox Oxide thickness W, L Channel Width Length k n ’ = μ n C ox k p ’ = μ p C ox Process conduction parameter (provided by manufacturer) Figure 11.19 shows the basic MOSFET diff-pair configuration using N-MOSFET. 6.1) Basic MOSFET Differential Pair Figure 11.19: Basic MOSFET differential-pair configuration. 6.1) Basic MOSFET Differential Pair (Cont) Figure 11.19: Basic MOSFET differential-pair configuration. Two identical transistor M 1 and M 2 , whose sources are connected together, are biased by a constant current source I Q which is connected to a negative supply V _ • The drains of M 1 and M 2 are connected through R D to a positive supply V + • Assume that M 1 and M 2 are always biased in the saturation region. Even with v G1 = v G2 = 0, the M 1 and M 2 can be biased in saturation region by the current source I Q . 6.1) Basic MOSFET Differential Pair (Cont) Example 11.8 Objective: Calculate the dc characteristics of a MOSFET diff- amp. Consider the diff-amp shown in Figure 11.20. The transistor parameters are: K n1 = K n2 = 0.1 mA/V 2 , K n3 = K n4 = 0.3 mA/V 2 , and for all transistors = 0 and V TN = 1 V Determine the maximum range of common-mode input voltage, i.e. find v CM (max) and v CM (min).

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EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-1

MOSFET Differential

PairReference: Neamen, Chapter 11

(6)

Learning Outcome

Able to: • Describe the mechanism by which a

differential-mode signal and common-mode signal are produced in a MOSFET differential-amplifier.

• Describe the dc transfer characteristics of a MOSFET differential-amplifier.

6.0) Essential Formulas

Region NMOS PMOS

Saturation vDS� vDS����� vSD� vSD�����

Transition Point

vDS����� ��vGS � VTN vSD����� ��vSG ��VTP

2][ TPSGpD VvKi +=2][ TNGSnD VvKi −=

oxoxox

poxpp

noxnn

tCL

Wk

L

WCK

LWk

LWC

K

ε

µ

µ

=

⋅==

⋅==

22

22'

' µn , µpMobility of electrons, holes

�oxOxide permittivity

toxOxide thickness

W, L Channel Width� Length

kn’ = µn Coxkp’ = µp Cox

Process conduction parameter (provided by manufacturer) �

• Figure 11.19shows the basic MOSFET diff-pair configuration using N-MOSFET.

6.1) Basic MOSFET Differential Pair

Figure 11.19: Basic MOSFET differential-pair configuration.

6.1) Basic MOSFET Differential Pair (Cont)

Figure 11.19: Basic MOSFET differential-pair configuration.

• Two identical transistor M1 and M2, whose sources are connected together, are biased by a constant current source IQ which is connected to a negative supply V_

• The drains of M1 and M2 are connected through RD to a positive supply V+

• Assume that M1 and M2 are always biased in the saturation region. Even with vG1 = vG2 = 0, the M1 and M2 can be biased in saturation region by the current source IQ.

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8Objective:Calculate the dc characteristics of a MOSFET diff-amp.

Consider the diff-amp shown in Figure 11.20. The transistor parameters are:

Kn1 = Kn2 = 0.1 mA/V2,Kn3 = Kn4 = 0.3 mA/V2,

and for all transistors� = 0 and VTN = 1 V

Determine the maximum range of common-mode input voltage, i.e. find vCM (max) and vCM (min).

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-2

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)

Figure 11.20: MOSFET diff amp for Example 11.8

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)

Figure 11.20: MOSFET diff amp for Example 11.8

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)Solution:The reference current can be determined from:

and from

Thus

Yields

and

( )

mA587.0

V40.2

011179

20

1

4

42

4

2431

1

4

1

41

==

=−−

−=

−=−−=−+

I

V

VV

VVKI

RV

RVVV

I

GS

GSGS

TNGSn

GSGS

��

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)The quiescent drain currents in M1 and M2 :

ID1 = ID2 = IQ / 2 � 0.293 mA

The gate-to-source voltages are then

The quiescent values of vO1 and vO2 are

vO1 = vO2 = V+ – ID1 RD / 2

= 10 – (0.293m)(16k)/2 = 5.31 V

V71.211.0

293.0

1

121 =+=+== TN

n

DGSGS V

KI

VV

��

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)

��

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)The maximum common-mode input voltage is the value when M1 and M2 reach the transition point

vCM (max) = VS1(max) + VGS1= (vO1 - VDS1(sat)) + VGS1

The minimum common-mode input voltage is the value when M4 reaches the transition point

vCM (min) = VS1(min) + VGS1= (V-- + VDS4(sat)) + VGS1

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-3

��

6.1) Basic MOSFET Differential Pair (Cont)

Example 11.8 (Cont)The maximum common-mode input voltage is the value when M1 and M2 reach the transition point,

VDS1 = VDS2 = VDS1(sat) = VGS1 - VTNVDS1 = 2.71 - 1 = 1.71 V

Therefore,vCM (max) = vO1 - VDS1(sat) + VGS1

= 5.31 - 1.71 + 2.71 = 6.31 V

The minimum common-mode input voltage is the value when M4 reaches the transition point,

VDS4 = VDS4(sat) = VGS4 - VTN = 2.4 - 1 = 1.4 VTherefore,

vCM (min) = V-- + VDS4(sat) + VGS1= (-10) + 1.4 + 2.71 = -5.89 V

( )( )

( )2121

2121

222

211

.

GSGSGGd

dnGSGSnDD

TNGSnD

TNGSnD

vvvvv

vKvvKii

VvKi

VvKi

−=−==−=−

−=

−=

��

6.2) DC Transfer characteristics

• Use circuit in Figure 11.19. Assume M1 and M2 are matched and neglecting their output resistances:

(11.60(a))

(11.60(b))

Taking square roots and subtracting

where (11.61)

is the differential-mode input voltage.

��

6.2) DC Transfer characteristics (Cont)

• If vd > 0, then vG1 > vG2 and vGS1 > vGS2

which implies that iD1 > iD2

• Since iD1 + iD2 = IQ (11.62)

( ) ( )( ) ( )

( ) 041

21

.

221

21

211

222

11

=−+−

−=−

==−−

dnQDQD

dnQDQD

dndnDQD

vKIiIi

vKIiIi

vKvKiIi

22

21

21.

22

21.

22

dQ

nd

QnQD

dQ

nd

QnQD

vI

Kv

IKIi

vI

Kv

IKIi

��

��

�−−=

��

��

�−+=

��

6.2) DC Transfer characteristics (Cont)

• Applying the quadratic formula, rearranging terms, and noting that iD1 > IQ / 2 and vd > 0, can obtain

(11.66)

• Using Equation (11.62) can also obtain

(11.67)

��

6.2) DC Transfer characteristics (Cont)

• The normalized drain currents are

(11.68)

and (11.69)

� These equations describe the dc transfer characteristics for the circuit. They are plotted in Figure 11.21 as a function of normalized differential input voltage

22

21

21.

221

21.

221

dQ

nd

Q

n

Q

D

dQ

nd

Q

n

Q

D

vI

Kv

IK

Ii

vI

Kv

IK

Ii

��

��

�−−=

��

��

�−+=

( )nQd KIv /2/�

6.2) DC Transfer characteristics (Cont)

• From (11.68) and (11.69), at a specific differential input voltage, bias current IQ is switched entirely to one transistor or the other.

���� This occurs when (11.70)

Fig 11.21: Normalized dc transfer characteristics for MOSFET differential amp.

nQd KIv /max

=

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-4

• Forward transconductance = the slope of the dc transfer characteristics for the iD1 curve.• From Figure 11.21, maximum forward transconductance occurs at vd = 0, so that

(11.71)

• Using (11.66),

(11.72)

where gm is each transistor’s transconductance.

22(max)

(max)0

1

mQnf

vd

Df

gIKg

dvdi

gd

==

==

6.2) DC Transfer characteristics (Cont)

��

6.2) DC Transfer characteristics (Cont)

• The slope of iD2 characteristic curve at vd = 0 is the same, except negative.

Note:

• Similar to BJT diff-amp, the differential-mode input voltage must be held within a small range of voltages so as to remain linear.

• However, the vd(max) for the MOSFET diff-amp is much larger than vd(max) for the BJT diff-amp.Why? Because the gain of the MOSFET diff-amp is much smaller than the gain of the bipolar (BJT) diff-amp.

Next

��

• Figure 11.22 is AC equivalent circuit of diff-amp configuration, showing only diff voltage and signal currents as a function gm. Assume output resistance looking into the current source is infinite.

6.3) AC equivalent circuit

Figure 11.22: AC equivalent circuit for MOSFET differential amplifier.

DQnDm

d

od

Ddm

oo

RIKRg

vv

A

Rvg

vv

.22

22

===

+=≡

• Using this equivalent circuit, the One-sided output voltage at vo2 is

(11.73)

• Then the differential voltage gain is

(11.74)��

6.3) AC equivalent circuit (Cont)

Figure 11.22: AC equivalent circuit for MOSFET differential amplifier.

��

6.4) Differential- and Common-Mode Input Impedances

• At low frequencies, input impedance of a MOSFET is essentially infinite.

� This means that both the differential-and common-mode input resistances of a MOSFET diff-amp are infinite.

��

6.5) Small-signal Equivalent Circuit Analysis

• Can determine basic relationships for differential-mode gain, common-mode gain, and CMRR from an analysis of the small-signal equivalent circuit.

Fig 11.23: Small-signal equivalent circuit, MOSFET differential amplifier.

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-5

( )o

ssm

o

sgsmgsm

RV

VVVg

RV

VgVg

=−+

=+

221

21

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

• Assume that transistors are matched, with � = 0 for each transistor, and that constant-current source is represented by a finite output resistance (Ro � �).

• Two transistors are biased at the same quiescent current, and gm1 = gm2 � gm

• KCL equation at node Vs

From the circuit, Vgs1 = V1 - Vs and Vgs2 = V2 - Vs

Then, (11.76)

( ) ( )( )

����

+

−���

����

�+

−=

−−=−==

om

omDmo

sDmDgsmdo

Rg

VRg

VRgV

VVRgRVgVV

12

11 12

222

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

• Solving for Vs(11.77)

• For a one-sided output at the drain of M2

• Substitute (11.77) and rearranging terms yields

(11.79)

om

s

Rg

VVV

12

21

+

+=

QnDQnm

cmcmddo

cmom

Dmd

Dmo

IKIKg

VAVAV

VRg

RgV

RgV

22

212

==

+=

+−=

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

• Based on relationships between input voltages V1and V2 and differential- and common-mode voltages, as given by Equation (11.29), Equation (11.79) can be written

(11.80)

• The output voltage, in general form, is

• The transconductance gm of the MOSFET is

2

2

2

1

dcm

dcm

VVV

VVV

−=

+=

oQn

DQn

om

Dmcm

DQnD

QnDm

d

RIK

RIK

RgRg

A

RIKR

IKRg

A

.221

.2

21

.22

22

+−

=+−=

=��

���

�==

• Therefore:� Differential-mode gain is

(11.82(a))

� Common-mode gain is

(11.82(b))

For an ideal current source, RO = �, so Acm = 0.�

6.5.1) Differential- and Common-mode Gains

6.5) Small-signal Equivalent Circuit Analysis (Cont)

6.5.2) Common-Mode Rejection Ratio

� Common-mode rejection ratio (CMRR) is

(11.83)

This demonstrate that the CMRR for the MOSFET diff-amp is also a strong function of the output resistance of the constant-current source.

� The value of CMRR can be increased by increasing the output resistance of the current source. The increase can be accomplished by using a more sophisticated current source circuit, such as the MOSFET cascode current mirror.

[ ]oQn RIKCMRR .22121 +=

6.5) Small-signal Equivalent Circuit Analysis (Cont)

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

Example 11.9

Objective:Determine the differential-mode voltage gain, common-mode voltage gain, and CMRR for a MOSFET diff-amp.

Consider a MOSFET diff-amp with the configuration in Figure 11.20. Assume the same transistor parameters as given in Example 11.8 except assume � = 0.01 V-1 for M4

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-6

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

Figure 11.20: MOSFET diff amp for Example 11.8 ��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

Example 11.9 (Cont)Solution:From Example 11.8, bias current is IQ = 0.587 mA.

The output resistance of the current source is then

RO = 1 / ( � IQ ) = 1/(0.01x0.587m) = 170 k�

The differential-mode voltage gain is

� Ad = 8.67

)k16.(2

)m587.0)(1(.

2== D

Qnd R

IKA

��

6.5) Small-signal Equivalent Circuit Analysis (Cont)

Example 11.9 (Cont)Solution: (Cont)

and the common-mode voltage gain is

� Acm = -0.0469

The common-mode rejection ratio is then

CMRRdB = 20log10(8.67/0.0469) = 45.3 dB

)k170.()m587.0)(1(221)k16.()m587.0)(1(2

.221

.2

+−=

+

−=

oQn

DQncm RIK

RIKA

��

6.6) Two-Sided Output

• For an ideal MOSFET op-amp, with the two-sided output defined as with Vo = Vd2 – Vd1, then

Vo = gm RD (Vgs1 – Vgs2) = gm RD (V1 – V2)

With: V1 = Vcm + Vd / 2 and V2 = Vcm – Vd / 2

� Differential-mode voltage gain isAd = gm RD (11.84(a))

�Common-mode voltage gain isAcm = 0 (11.84(b))

Acm = 0 is a consequence of using matched devices and elements in the diff-amp circuit.

��

6.6) Two-Sided Output (Cont)

6.6.1) Effect of RD and gm mismatches

Note: CMRR of mismatched elements in MOSFET diff-amp is identical with the results of mismatched elements in the BJT diff-amp.

Next��

Larger circuits

EEEB273 – Electronics Analysis & Design II

Lecturer: Dr Jamaludin Bin Omar 6-7

��

6.1) Basic MOSFET Differential Pair

Figure 11.19: Basic MOSFET differential-pair configuration. �

6.1) Basic MOSFET Differential Pair (Cont)

Figure 11.20: MOSFET diff amp for Example 11.8

6.2) DC Transfer characteristics (Cont)

���� This occurs when (11.70)

Fig 11.21: Normalized dc transfer characteristics for MOSFET differential amp.

nQd KIv /max

=��

6.3) AC equivalent circuit

Figure 11.22: AC equivalent circuit for MOSFET diff-amp.

��

6.5) Small-signal Equivalent Circuit Analysis

Fig 11.23: Small-signal equivalent circuit, MOSFET diff-amp.