1-lesson1-electronic device 2010 - tomy

8/11/2019 1-Lesson1-Electronic Device 2010 - Tomy

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Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Dr. Arief Udhiarto, S.T, M.T: Tomy Abuzairi, ST, M.Sc

Source : Professor Nathan Cheung, U.C. Berkeley

ELECTRONICS DEVICE 00-01


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Electrical Engineering DepartmentUniversity of Indonesia 2

Schedule

Lectures:K.209 Tuesday 08:00-09.50 AM


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Relation to Other Courses

Prerequisite:Simple pn-junction, BJT and MOSFET theory;BJT and MOSFET circuit applications.Familiarity with the Bohr atomic model

Relation to other courses:Electronics Engineering


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Reading Material

References Text :Device Electronics for Integrated Circuits : Richard S.Muller & Theodore I. Kamins (John Wiley 2003)

Semiconductor Device Fundamentals : R. F. Pierret(Addison Wesley, 1996)

ReadingText:Solid State Electronic Devices 4 th Edition : B. G.Stretman, S. Banerjee (Prentice Hall, 2000)


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SAP1. Course :Electronics Device2. Course Code :EEE SKS: 2 Semester: 3 3. Instructor :Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)

Dr. Arief Udhiarto, S.T, M.T (AU)Tomy Abuzairi, S.T, M.Sc (TA)

4. Class System :Single5. Courses Objective : mastering in basic concept of integrated-

circuit operation devices specially in silicon-integrated circuits and its Processing Technology

6. Grading(%) :(20) Homework , (30) MT,(30) Seminar, (20) FT


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Pre Test

1. What do you know about fermi energy?2. What is hole?3. What do you know about CMOS?

10 Minutes Only


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Course Organization

Semiconductor Physics;Metal-Semiconductor Contact

PN-Junction

Bipolar Junction TransistorMOSFETIC Processing


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Overview ofSemiconductor Electronics

Reading Assignment :Kamins Chap 1, Chap 3


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Applications of SemiconductorDevices


Semiconductor

Devices

draingate

source

n+n+

p - Si

MOSFET


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Evolution of Bipolar Junction Transistors

The First Point-contact Transistor,

Bell Laboratories(1947) SiGe BJT(2000) Si Nanowire BJT(2003)


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Today and Tomorrow


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State-of-the-art Transistor Size

1m = 10-6m = 10-4 cm = 1000 nm1 nm =10


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Advantages of Technology Scaling

More dies per wafer, lower cost Higher -speed devices and circuits


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Roadmap of Transistor



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Moore Law (Gordon Moore 1965)


The nu m ber of t rans i s tors in ach ip w i ll be dou b led every 18m o n t h s


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History


1904 Vacuum Tube1925 Concept of Field Effect Transistor

1947 Bipolar Transistor1958 Bipolar IC1959 MOS Transistor1961 IC-MOS Technology1972 MOS Microprocessor


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Semiconductors


Elemental SemiconductorSi, Ge

Compound SemiconductorGaAs - Gallium arsenideGaP - Gallium phosphide

AlAs - Aluminum arsenide AlP - Aluminum phosphideInP - Indium PhosphideZnO Zinc OxideCdSe Cadmium selenide

Etc. AlloysSi1-xGex, AlxGa1-x As


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C t ll g hi Pl d Si
http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm


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Crystallographic Planes and SiWafers

Silicon wafers are usually cut along the (100)plane with a flat or notch to orient the waferduring IC fabrication
http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm


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Crystallographic Planes


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Si (100)



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Si (111)



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Si (100) and Si (110)



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Si (100) and Si (110)



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Electrical Engineering Department

University of Indonesia 33

Silicon Atom1s, 2s, 2p orbitals filled by 10electrons3s, 3p orbitals filled by 4electrons

4 nearest neighborsunit cell length = 5.435 1022 atoms/cm3

diamond cubic structure

The Si Atom The Si Crystal
http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm


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Bohr Model
http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm


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The Simplified Energy Band


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The Simplified Energy BandDiagram

S i d t I l t d


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Semiconductors, Insulators, andConductors

Totally filled band and totally empty bands do not allowcurrent flow. (just as there is no motion of liquid in atotally filled or totally empty bottle

Metal conduction band is half-filled Semiconductors have lower Egs than insulators and

can be doped


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Density of States


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Concept of a hole

An unoccupied electronic state inthe valence band is called a hole Treat as positively charge mobile particle in the semiconductors


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http://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM


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Electrons and Holes
http://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM

1-lesson1-electronic device 2010 - tomy

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