154 icrera2013 spain

A PHOTOVOLTAIC PANEL MODEL IN

MATLAB/SIMULINK

Shivananda Pukhrem ,MSc.

[email protected],[email protected] Faculty of Electrical Engineering, Program: Renewable Energy System

Wroclaw University of Technology, 27 Wybrzeże Wyspiańskiego St., 50-370 Wrocław, Poland

Abstract- A circuit based simulation model for

a PV cell for estimating the IV characteristic

curves of photovoltaic panel with respect to

changes on environmental parameters

(temperature and irradiance) and cell

parameters (parasitic resistance and ideality

factor).This paper could be used to analyze in

the development of MPPT (maximum power

point tracking) algorithm. Using a Shockley

diode equation, an accurate simulink PV

panel model is developed. 60W Solarex

MSX60 PV panel is chosen for evaluating the

developed model.

Index terms -Photovoltaic (PV), Shockley

diode, irradiance, Matlab/Simulink, IV and

PV curves & MPPT

I. Introduction

Photovoltaic (PV) energy has become one of

the promising technologies to use as

distributed generators [1].In PV plant, the

optimum efficiency is affected mainly by

three factors: the efficiency of the PV panel

(in commercial PV panels it is between 8-15

%[2]), the efficiency of the inverter (95-

98%[3]) and the efficiency of the maximum

power point tracking (MPPT) algorithm

(which is over 98%[4]).Improving the

efficiency of panels and inverter is not easy

as it depends on the technology availability

and expenses, however improving the MPPT

algorithm is an inexpensive way. This paper

allows a researcher to develop a better

MPPT algorithm by understanding the PV

panel behavior under different conditions

(environmental as well as the cell

parameters).

II. Physics of Photovoltaic cell

A simple solar cell consist of solid state p-n

junction fabricated from a semiconductor

material (usually silicon).In dark, the IV

characteristic of a solar cell has an

exponential characteristic similar to that of a

diode[5]. However when the solar energy

(photons) hits on the solar cell, energy

greater than the band gap energy of the

semiconductor, and release electrons from

the atoms in the semiconductor material,

creating electron-hole pairs [6].The charged

carrier are moved apart under the influence

of internal electric fields of the p-n junction

and hence a current proportional to the

incident photon radiation is developed. This

phenomenon is called photovoltaic effect,

first observed by A.E Becquerel in

1839.When the cell is short circuited, these

current flows in the external circuit but when

open circuited, this current is shunted

internally by the intrinsic p-n junction diode.

In this paper, a variable load is connected in

the external short circuit. The complete

model is available in [8].

A. A PV cell model

A simplest equivalent circuit of a solar cell

is a current source in parallel with a diode.

The output of the current source is directly

proportional to the solar energy (photons)

that hits on the solar cell (photocurrent ).

During darkness, the solar cell is not an

active device; it works as a diode, i.e. p-n

junction. It produces neither a current nor a

voltage. However, if it is allowed to connect

to an external source (large voltage) it

978-1-4799-1464-7/13/$31.00 ©2013 IEEE

2nd International Conference on Renewable Energy Research and Applications Madrid, Spain, 20-23 October 2013

ICRERA 2013

https://en.wikipedia.org/wiki/Alexandre-Edmond_Becquerel

generates a current , called diode (D)

current or diode current. The diode

determines IV characteristic.

Fig: 1 Circuit diagram of a PV cell [9].

The circuit diagram of a PV cell is shown

above in Fig 1.Accurate simulation is

obtained after considering the following

parameters:

Temperature dependence of the

diode reserved saturation current Is.

Temperature dependence of the

photo current Iph.

Series resistance Rs [9] (internal

losses due to the current flow) which

gives a more accurate shape between

the maximum power point and the

open circuit voltage.

Shunt resistance Rsh [9], in parallel

with the diode, this corresponds to

the leakage current to the ground.

Equations which define the model of a PV

cell are given below [9], [10]:

1.

(1)

2.

(2)

3.

(3)

4.

(4)

5.

(5)

6.

(6)

7. (7)

8. (8)

Used V. Nomenclature from page-6 for the

(1)-(8) equations variables.

Fig 2 shows the characteristic of IV curve.

The net current I is obtained from the photo

current Iph and the diode current Id [11].

Fig: 2 Characteristic of IV curve from Iph and [11].

B. IV curve for a PV cell

Fig: 3 Current-Voltage (IV) curve for a PV cell [9].

A general I-V characteristic of the solar cell

for a given ambient irradiation ‘G’ and fixed

cell temperature ‘T’ is shown in Fig 3.For a

certain resistive load, the load characteristic

is a straight line with slope

. Power

delivered to the load depends on the value of

the resistance only. In some cases if the R

load is very small; the PV cell operates in

the M-N region of the IV curve (Fig3), the

PV cell act as a constant current source,

which is almost equivalent to a short circuit

current.


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However, if the R load is large, the PV cell

operates in the P-S region of the IV curve,

the PV cell act as a constant voltage source

almost equivalent to the open circuit voltage

[9].A PV cell is characterized by the

following fundamental parameters w.r.t Fig3

1. Short circuit current: = (Greatest

value of the current generated by a PV

cell, which is produced by the short

circuit condition: V=0.

2. Open circuit voltage is a voltage drop

across the diode D when the generated

current I=0.It presumes the voltage of the

PV cell in the night and it is expressed by

(2).

3. Maximum power point is the operating

point in Fig 3,where the

power dissipated in the resistive load is

maximum:

4. Maximum efficiency is the ratio of the

maximum power and the incident solar

energy (photons).

where is the ambient irradiation and A

is the PV cell area.

5. Fill factor (FF) is the ratio of the

maximum power that can be delivered to

the load and the theoretical maximum

power which is the product of

and

.FF is a

measure of real I-V characteristic which

value much be higher than 0.7 for a good

PV cell.

However FF decreases as the cell

temperature increases. The open circuit

voltage increases logarithmically with the

ambient irradiation where as the short circuit

current is a linear function of the ambient

irradiation. The prominent effect with

increasing the PV cell’s temperature is the

linear decrease of the open circuit voltage,

hence making the PV cell less efficient. The

short circuit current slightly increases with

the cell temperature.

C. Consideration of environmental

parameters and cell parameters in PV cell

model

i. Environmental parameters (temperature

and irradiance): The influence of the cell

temperature T and the ambient irradiation

G on the cell characteristics can be

obtained from the model equations. From

equation (7) photo current (A) is a

function of the ambient irradiation G

(W/ ) and from equation (2) cell

temperature (K) is linear decrease of

the . At STC (Standard Test

Condition, G= 1 kW/m at spectral

distribution of AM =1.5; = 25ºC)

= from (7) which is the greatest

current, since = 25ºC for all test

conditions. From (7) as G increases the

increases but from (2) as the

increases the decreases. Influence

of , which is the change in panel per

ºC at temperatures other than 25°C, in (7)

is greater when changes from

(=25°C).

ii. Cell parameters (parasitic resistance and

ideality factor): Resistive effects in solar

cells reduce the efficiency of the solar cell

by dissipating power in the resistances.

The most common parasitic resistances

are series resistance and shunt resistance

whose key impact is to reduce the fill

factor. Both the magnitude and impact of

series and shunt resistance depends on the

geometry of the solar cell, at the

operating point of the solar cell. It is

measured in Ω . For an ideal condition

(ideal diode characteristic), and

[10]. Series resistance in a

solar cell has three causes: the movement

of current through the emitter and base of

the solar cell; the contact resistance

between the metal contact and the silicon;

and the resistance of the top and rear

metal contacts. A straight forward of

estimating the series resistance from a


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solar cell is to find the slope of the IV curve

at the point [12]. Significant power

losses caused by the presence of a shunt

resistance are typically due to

manufacturing defects, rather than poor solar

cell design. An estimate for the value of the

of a solar cell can be determined from the

slope of the IV curve near the point [12].

The ideality factor n of a diode is a measure

of how closely the diode follows the ideal

diode equation. The ideal diode equation

assumes that all the recombination occurs

via band to band or recombination via traps

in the bulk areas from the device (i.e. not in

the junction).However recombination does

occur in other ways and in other areas of the

device. This recombination’s produce

ideality factors n that deviate from the ideal

[12].

D. A PV panel simulation model

Considering the environmental and cell

parameters, a PV panel (Solarex MSX 60 W)

model based on equations (1)-(8) and

Tables. (1, 2) is developed in

MATLAB/SIMLINK with a variable load

resistance at the output. To begin, typical

electrical characteristics of 60W Solarex

MSX60 [13] shown in Table 1.is used as an

initial declaration value before simulating.

Table 1: Typical Electrical Characteristics [13]

Parameters Panel MSX-60

Max. power Pmpp,at STC 60 W

Voltage @Pmax(Vmpp) ,at STC 17.1 V

Current @ Pmax(Impp) ,at STC 3.5 A

Guaranteed minimum Pmax 58 W

Short-circuit current (Isc) 3.8 A

Open-circuit voltage (Voc) 21.1 V

Temperature coefficient of

open-circuit voltage, KV

-(80±10)mV/°C


short-circuit current, KI

(0.065±0.015)%/°C

Temperature coefficient of power,

KP

–(0.5±0.05)%/°C

No. of polycrystalline silicon

solar cells, C

36

Band-gap energy of the

cell(silicon)

1.12eV

Now in Fig: 4 depict the set up of PV panel

simulation model.

Fig: 4 A PV cell simulation set up

Also some calculated data for Solarex MSX-

60W [13] which is important for initial

declaration and is shown in Table.2

Table 2: The calculated data of the parameters for the

Solarex MSX-60 at 25°C,A.M 1.5, and 1 kW/ [14]

Parameters Calculated Values

2.002 x A

3.8 A

0.18 Ω

360.002 Ω

n 1.36

III. Simulation results

After changing , and n

different results are obtained. Table.3 shows

the calculated data from the simulated model

[8] at STC.Table.3 can be compared with

Table.1 for evalating the simulation

results.And Fig: 5 and Fig: 6 shows the

validation of the simulated model.

Table 3: The calculated data from the simulated model for

Solarex MSX-60 at STC

Parameters Calculated values

Peak Power (Pmpp) 59.39 W

Peak Voltage (Vmpp) 16.65 V

Peak Current (Impp) 3.568 A

Fig: 5 Power vs Voltage curve showing the Pmpp and

Vmpp as Y and X coordinate respectively at STC.

0 5 10 15 200

10

20

30

40

50

60

Volatge V

Pow

er W

Power vs Voltage curve at STC

X: 16.65

Y: 59.39

Power vs Voltage


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http://pveducation.org/pvcdrom/pn-junction/types-of-recombination

Fig: 6 Current vs Voltage curve showing the Impp

and Vmpp as Y and X coordinate respectively at STC.

Fig: 7 shows the IV curves at different

irradiance G (W/ ) with constant

=25ºC and AM=1.5.

Fig: 7 IV curves at different G


(ºC) with constant G=1000 W/ and

AM=1.5.

Fig: 8 IV curves at different Top


under STC with =360 ohm.

Fig: 9 IV curves at different


under STC with =0.18 ohm.

Fig: 10 IV curves at different


under STC with =0.18 ohm and =360

ohm.

Fig: 11 IV curves at different n

0 5 10 15 20 250

1

2

3

4

X: 16.65

Y: 3.568

Volatge V

Curr

ent

A

Current vs Voltage curve at STC

Current vs Voltage

0 5 10 15 20 250

0.5

1

1.5

2

2.5

3

3.5

4

Volatge V

Curr

ent

A

Top=25°C and different Irradiance

G=1000 W/m2

G=800 W/m2

G=600 W/m2

G=400 W/m2

G=200 W/m2

0 5 10 15 20 250

0.5

1

1.5

2

2.5

3

3.5

4

Volatge V

Curr

ent

A

Under G=1000 W/sq.m and different Top

Top=0°C

Top=25°C

Top=50°C

Top=75°C

Top=100°C

0 5 10 15 20 250

0.5

1

1.5

2

2.5

3

3.5

4

Volatge V

Curr

ent

A

Under STC with Rp=360 ohm and diff. parasitic series resistor(Rs)

Rs=0 ohm

Rs=0.18 ohm

Rs=0.36 ohm

Rs=0.54 ohm

Rs=0.72 ohm

0 5 10 15 20 250

0.5

1

1.5

2

2.5

3

3.5

4

Volatge V

Curr

ent

A

Under STC with Rp=360 ohm and diff. parasitic shunt resistor(Rp)

Rp=5 ohm

Rp=10 ohm

Rp=50 ohm

Rp=360 ohm

Rp=1000 ohm

0 5 10 15 20 250

0.5

1

1.5

2

2.5

3

3.5

4

Volatge V

Cur

rent

A

Under STC with Rs=0.18 ohm Rp=360 ohm and at different n

n=1.18

n=1.36

n=1.54

n=1.72

n=1.90


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IV. Conclusion

From the simulation results which are

depicted in figures (9)-(11), the

variables , , , and n which affects

the performance of a PV panel is studied

thoroughly. In addition to it, these results

could be used to develop the MPPT

algorithm by understanding how these

variables work. The ideal condition for

obtaining the maximum power from the PV

panel are =25ºC,

A.M=1.5, =0.18 ohm,

and n=1.36 which are shown in Fig: 5, Fig:

6 and Fig: 7 (with legend G=1000 W/ ,

blue color). This ideal condition is also

specified in the Solarex MSX-60 datasheet

[13].Every manufacture intends to produce

their PV panel in the ideal condition as

mentioned above. Hence this paper is a

summary for understanding the behavior of

PV panel with change of the said variables

and also in estimating the IV curves under

such changes.

V. Nomenclature

STC: Standard Test Condition, G= 1kW/ at spectral

distribution of AM=1.5 =25ºC

: Solar irradiance ratio =

,

: Thermal Voltage, V

: Boltzmann’s constant, 1.38e-23

: Cell operating temperature in ºC

: Cell temperature at 25ºC

: Electron Charge constant, 1.6e-19 C

: Diode reversed saturation current, A

: Diode reversed saturation current at

I: Output current from the PV panel, A

: Shunt current, A

V: Output voltage from the PV panel, V

n: Diode ideality factor,1.36

C: No of cells in a PV panel, 36

: No of PV panel in series & parallel

A.M= Air mass coefficient.

VI. References

[1] Gudimetla, B. Katiraei, F. ; Aguero, J.R. ; Enslin,

J.H.R. ; Alatrash, H. “Integration of micro-scale

photovoltaic distributed generation on power

distribution systems: Dynamic analyses”,

Transmission and Distribution Conference and

Exposition (T&D), 2012 IEEE PES.

[2] “Trends in photovoltaic applications. Survey

report of selected IEA countries between 1992 and

2009”, International Energy Agency, Report IEA-

PVPS Task 1 T1-19:2010, 2010

[3] “Sunny Family 2010/2011 - the Future of Solar

Technology”, SMA product catalogue,2010

[4] L. Piegari, R. Rizzo, "Adaptive perturb and

observe algorithm for photovoltaic maximum

power point tracking," Renewable Power

Generation, IET, vol. 4, no. 4, pp. 317-328, July

2010.

[5] G. Walker, "Evaluating MPPT converter

topologies using a MATLAB PV model,” Journal

of Electrical & Electronics Engineering,

Australia,IEAust, vol.21, No. 1, 2001, pp.49-56.

[6] Lorenzo, E. (1994), “Solar Electricity Engineering

of Photovoltaic Systems”, Artes Graficas Gala,

S.L., Spain.

[7] https://en.wikipedia.org/wiki/A._E._Becquerel

[8] http://www.mathworks.com/matlabcentral/fileexch

ange/41537-a-photovoltaic-panel-model-in-

matlabsimulink

[9] Francisco M. González-Longat - 2do congreso

iberoamericano de estudiantes de ingeniería

eléctrica, electrónica y computación, “Model of

Photovoltaic Module in Matlab” (II CIBELEC

2005).

[10] J.A. Ramos-Hernanz,J.J. Campayo ,J. Larranaga ,

E. Zulueta ,O. Barambones ,J. Motrico ,U.

Fernandez Gamiz, I. Zamora, “Two photovoltaic

cell simulation models in Matlab/Simulink ”-

(IJTPE), Iss. 10, Vol. 4, No. 1, Mar. 2012

[11] Marcelo Gradella Villalva, Jonas Rafael Gazoli,

and Ernesto Ruppert Filho. “Comprehensive

Approach to Modeling and Simulation of

Photovoltaic Arrays” -IEEE Transactions on

power electronics, vol. 24, no. 5, May 2009

[12] http://www.pveducation.org/pvcdrom/solar-cell-

operation/

[13] http://californiasolarcenter.org/ssh.html/newssh/pd

fs/Solarex-MSX64.pdf

[14] Dominique Bonkoungou, Zacharie

Koalaga,Donatien Njomo, “Modeling and

Simulation of photovoltaic module considering

single-diode equivalent circuit model in

MATLAB”- (IJETAE), Iss.3 Vol. 3, March 2013


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https://en.wikipedia.org/wiki/A._E._Becquerel

http://www.mathworks.com/matlabcentral/fileexchange/41537-a-photovoltaic-panel-model-in-matlabsimulink



http://www.pveducation.org/pvcdrom/solar-cell-operation/

http://www.pveducation.org/pvcdrom/solar-cell-operation/

http://californiasolarcenter.org/ssh.html/newssh/pdfs/Solarex-MSX64.pdf


Report on general overview of the implemented simulation model

I. Introduction

A simulation PV panel model based on 60W

Solarex MSX60 is developed using a single

diode design. Many research papers on

single diode designed are presented []. In

this report, a detailed construction and

analysis of the said PV panel will present.

To begin, typical electrical characteristics of

60W Solarex MSX60 [1]-[4] shown in Table

1.is used as an initial declaration value

before simulating.

Table 1: Typical Electrical Characteristics []

Parameters Panel MSX-60 Max. power Pmax 60 W

Voltage @Pmax(Vmp) 17.1 V

Current @ Pmax(Imp) 3.5 A

Guaranteed minimum Pmax 58 W

Short-circuit current (Isc) 3.8 A

Open-circuit voltage (Voc) 21.1 V


open-circuit voltage, KV

-(80±10)mV/°C


short-circuit current, KI

(0.065±0.015)%/°

C


power, KP

–(0.5±0.05)%/°C

No. of polycrystalline silicon

solar cells, C

36

Band-gap energy of the

cell(silicon)

1.12eV

II. Modeling

From the said research paper [1]-[4], an

important equation to model a PV panel with

reference to 60W Solarex MSX60 is given

below. They are:

1.

(1)

2.

(2)

3.

(3)

4.

(4)

5.

(5)

6.

(6)

7. (7)

8. (8)

Nomenclature for the above variables in

equations are given below,

STC: Standard Test Condition, G= 1kW/ at spectral

distribution of AM=1.5 =25ºC

: Solar irradiance ratio =

,

: Thermal Voltage, V

: Boltzmann’s constant, 1.38e-23

: Diode current

: Cell operating temperature in ºC

: Cell temperature at 25ºC

: Electron Charge constant, 1.6e-19 C

: Diode reversed saturation current, A

: Diode reversed saturation current at

I: Output current from the PV panel, A

: Shunt current, A

: Phase Current, A

V: Output voltage from the PV panel, V

n: Diode ideality factor,1.36

C: No of cells in a PV panel, 36

: No of PV panel in series & parallel

Following figures depict the corresponding

equations as given above .They are shown

below:

Fig: 1 Thermal voltage (eqn 1)

Thermal Voltage Eqn

[q]

[k]

[Vt][Top]


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Fig: 2 Diode current (eqn 3)

Fig: 3 Diode reversed saturation current (eqn 4)

Fig: 4 Diode reversed saturation current at , (eqn 5)

Fig: 5 Shunt Current (eqn 6)

Fig: 6 Phase Current (eqn 7)

Fig: 7 Output current from the PV panel I (eqn 8)

The voltage V (shown in green) is developed

by loading variable resistor across the PV

panel terminal. Hence the output current I

(shown in green) flow through this variable

resistor which allows in obtaining the most

important I-V characteristics of a PV panel.

The connection arrangement is given in [4].

Fig: 8 Mode of connection [4].

The connection arrangement of the simulation model

is shown below.

Fig: 9 A Complete model for simulation.

Diode Current Eqn

[n]

[C]

[Vt]

[Rs]e

u

[Np]

[Is]

[Ns]

[V]

[I]

[Id]

Diode current1

Reversed saturation Current Eqn

[k]

[q]

[Eg]

eu

[Tref]

[Top]

[Tref]

[Top]

[Irs]

1

1

[Is]

Reversed saturation current

[n]

Reversed Saturation Current at Top Eqn

[n]

[Top]

[C]

[q]

[k]

[Voc]

eu

[Isc][Irs]

Irs

1

Shunt Current Eqn

[Ish]

Shunt current[Rs]

[Rp]

[V]

[I]

Phase Current Eqn

[Iph]

Phase current

[Isc]

[Tref]

[Top]

[KI]

[Gk]

Load Current Eqn

[Np]

[Ish]

[Id]

[Iph]

[I]

1.36

n

V+

-

Voltage Sensor

PS+

-

Variable Resistor

25+273.15

Temperature_op

f(x)=0

Solver

Configuration

PSS

PSS

0.18

Rs

360.002

Rp

Ramp

V

G

Top

Rs

Rp

n

I

PV panel

PS S

PSS

G

Irradiance(p.u)

(W/m2)

[V]

[V]

Electrical Reference

+ -

Diode

I+

-

Current Sensor

Controlled Current

Source


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The signal routing GOTO and FROM is

used for the above models from Simulink

library browser. A SimElectronics library is

used to model the complete simulation

scheme shown in Fig 9. The complete .mdl

file of the above simulation can be

downloaded from [5].

III. Simulation model validation

As mention in the paper “A

PHOTOVOLTAIC PANEL MODEL IN

MATLAB/SIMULINK” following

simulation results is obtaining which could

be compared with the Solarex MSX 60 PV

panel. For an instance comparison on the

basis of variation of I-V characteristic curve

under the change of operating temperature at

STC is given below.

Fig: 10 Solarex MSX-60 I-V Characteristic curves at STC.

Fig: 11 Simulated Solarex MSX-60 I-V Characteristic

curves at STC

From the figures 9 and 10, it can be

concluded that at 25°C under STC both the

characteristic curve behaves the same. And it

also be noted that at 25°C under STC, from

figure 10 the = 21.06 V which is closed

to 21.1 V as mentioned in table .1

Table.2 shows the calculated data from the

simulated model [6] at STC.Table.2 can be

compared with Table.1 for evalating the

simulation results.

Table. 2 The calculated data from the simulated model for

Solarex MSX-60 at STC Parameters Calculated values

Peak Power (Pmpp) 59.39 W

Peak Voltage (Vmpp) 16.65 V

Peak Current (Impp) 3.568 A

The following figures are obtained after

simulation of the model for Solarex MSX-60

at STC.

Fig: 12 Power vs Voltage curve showing the Pmpp and

Vmpp.as Y and X coordinate respectively.

Fig: 13 Current vs Voltage curve showing the Impp and

Vmpp as Y and X coordinates respectively.

0 2 4 6 8 10 12 14 16 18 20 220

0.5

1

1.5

2

2.5

3

3.5

4

X: 21.06

Y: 0.0372

Volatge V

Curr

ent

A

Under G=1000 W/sq.m and different Top

Top=100°C

Top=75°C

Top=50°C

Top=25°C

Top=0°C

0 5 10 15 200

10

20

30

40

50

60

Volatge V

Pow

er

WPower vs Voltage curve at STC

X: 16.65

Y: 59.39

Power vs Voltage

0 5 10 15 20 250

1

2

3

4

X: 16.65

Y: 3.568

Volatge V

Curr

ent

A

Current vs Voltage curve at STC

Current vs Voltage


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VI. References

[1] Francisco M. González-Longat - 2do congreso

iberoamericano de estudiantes de ingeniería

eléctrica, electrónica y computación, “Model of

Photovoltaic Module in Matlab” (II CIBELEC

2005).

[2] J.A. Ramos-Hernanz,J.J. Campayo ,J. Larranaga ,

E. Zulueta ,O. Barambones ,J. Motrico ,U.

Fernandez Gamiz, I. Zamora, “Two photovoltaic

cell simulation models in Matlab/Simulink ”-

(IJTPE), Iss. 10, Vol. 4, No. 1, Mar. 2012

[3] Dominique Bonkoungou, Zacharie

Koalaga,Donatien Njomo, “Modeling and

Simulation of photovoltaic module considering

single-diode equivalent circuit model in

MATLAB”- (IJETAE), Iss.3 Vol. 3, March 2013

[4] Rajesh Gupta, Gaurang Gupta, Dharmendra

Kastwar, Amir Hussain and Hars Ranjan,

“Modeling and Design of MPPT Controller for a

PV Module using PSCAD/EMTDC”.

[5] http://www.mathworks.com/matlabcentral/fileexch

ange/41537-a-photovoltaic-panel-model-in-

matlabsimulink

[6] http://californiasolarcenter.org/ssh.html/newssh/pd

fs/Solarex-MSX64.pdf

(IC- UC3844) PWM charging technique”.

Shivananda Pukhrem, is Master of

Science under the program “Renewable

Energy System” from Wroclaw University of

Technology, Poland. He passed out in 2013,

July with a master thesis in “Investigation

into algorithms of photovoltaic array

maximum power point tracking.” He is

specializing in Solar PV system and has

strong interest on it. He did his bachelor of

“Electrical and Electronics Engineering”

from Visvesvaraya Technological

University, India. His bachelor final year

project was “12 Volt-10 Ampere solar

charge controller using current mode


ICRERA 2013






154 icrera2013 spain

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