2008 led making

8/6/2019 2008 Led Making

1/32

Nitronex

Technologies & Costs

DOE WorkshopApril 2009

Presented by: Jeff Perkins

OSRAMAixtron OSRAMCREELumileds

45 rue Sainte Genevive, F-69006 Lyon, FranceTel : +33 472 83 01 80 - Fax : +33 472 83 01 83Web: http://www.yole.fr

2009

8/6/2019 2008 Led Making

2/32

Yole Dveloppement

Lyon, France based market research and strategy consulting.

Our fields of competence include: MEMS, including microfluidics , ,

LED & Power Devices

Advanced Packaging - 3D IC - TSV Photovoltaic

We provide the following services: A free monthly newsletter (Micronews) with >23,000 subscribers A news and information web portal (www.i-micronews.com)

Market & Technology reports Custom consulting:

Market and technical evaluations and forecasts,

Process cost evaluation & reverse costing

Business strategy development 2009 2

8/6/2019 2008 Led Making

3/32

Our Activity is Global

40% of our business is

30% of our business is

in North America30% of our business is

in Asia

in EU Countries

Yole Inc.Allendale, NJ

Yole DveloppementLyon (HQ).

Global InformationInc. (Partner)

2009 3

8/6/2019 2008 Led Making

4/32

Working Along The Value Chain

Yole consultants provide Market Analysis,Technolo Evaluation and Business Plan Assessment for clients

along the entire value chain.

2009 4

8/6/2019 2008 Led Making

5/32

LED Status Summary The LED market was $5.1B in 2008 with a volume of over 50 billion units. LED applications are currently dominated by portable device backlighting

Mobile phones, PDA, GPS Higher brightness LEDs have begun to address other promising markets like

automotive, LCD backli ht and eneral li htin . Low-end LED products account for 83% High-Brightness LEDs 15% Emerging Ultra High-Brightness products 2%

Higher efficacy is needed for the General Lighting Market >150 lm/W has been proven with low-current LED operation (generally 20mA). Today high power LEDs have overall efficiency of 25%. To increase efficiency, 10 key technologies are in use or under investigation

With continued development of a variety of technologies, high power LEDs with150 lm/W converting more than 50% of input watts to light can be envisioned.

2009 5 Executive summary

8/6/2019 2008 Led Making

6/32

K t i d lLED Market

ey me r cs an p ayers

2009

8/6/2019 2008 Led Making

7/32

LED Market Overview

Conventional LED High Brightness LED Ultra-high brightness white LED

Specifications

< 200 mW power 20 lm/W

1 to 3 lm generated

Typical epoxy housing

Up to 1 Watt power> 30 lm/W

5 to 30 lm generated

Specific packaging

up to 5 watt power> 50 lm/W

> 100 lm generated

Specific packaging

A licationmarkets

Cell phone keypad

Cell phone backlight

Signs

Screen backlight

Dashboard backlight

Large displays

Car head-lamps

High-End apps

General Illumination

(> 10,000 units). . . . .

2009 7 LED Market

8/6/2019 2008 Led Making

8/32

Facilities - CREE

Research Triangle Park (NC, USA)Cor orate Head uarters

manufacturing

Cotco (China)Production and packaging

,Technology center

2009 8 CREE Business Model

8/6/2019 2008 Led Making

9/32

8/6/2019 2008 Led Making

10/32

Facilities - OSRAM

Headquarters and manufacturing main site

Penang (Malaysia):Second factory for surface-mounted LEDs, high-powerlaser diodes and organic LEDs

.

100-120M$From 2008, Penang site willalso be dedicated to LED dies

manufacturing.

2009 10 OSRAM Business Model

8/6/2019 2008 Led Making

11/32

G l Ill i tiLED Market

enera um na on

2009

General Illumination Market

8/6/2019 2008 Led Making

12/32

-Worldwide Lighting Estimates

Extrapolating from OIDA 2000 estimates , . Worldwide = US x 4 = 120,000 T lm-hrs in 2008 Growth rate was estimated at 1.2 % per year Various sources ut the market for li htin roducts near 70B.

Solid State General Lighting market size estimates for 2012.

Range of possible LED market penetration: Base case: Low performance, low price, low market penetration rate ->more LEDs in a single lamp Technology breakthrough case: High performance, controlled price,

->

2009 12 General Illumination Market

8/6/2019 2008 Led Making

13/32

8/6/2019 2008 Led Making

14/32

pNumber of lumens for various applications

time-to-market for mass-productionLight source# of lumen

General Lighting

Car HeadlampRPTVLCD backlight

100Pocket Projector

Car Rear lamp

Head-up display

2009 14

< 10

2007 2009< 2006 2008 > 2010LED technologies

8/6/2019 2008 Led Making

15/32

100%

Heat

Optical Power90%80% The increasing of the input power

produces more lumens, but lm/W ratiorops an so more ea s genera e

Thermal management is crucial for LED60% packaging

50%

40%

30%

20%

10%

0%

Average LED optical output power vs. heat

20 mA 100 mA 350 mA 1000 mA

2009 15 LED technologies

8/6/2019 2008 Led Making

16/32

-Overall LED Performance

-

Epitaxy Front-End Back-End Packaging

Substrate LED epiwafer

LED dieDies-on-wafer

LED lamp

Internal QuantumEfficiency: int.

Electrical losses: elect.Extraction

Efficiency: extr.

pack.

Phosphor conversionLensesHousing

2009 16

total =int. x elect. x extr. x pack.

LED technologies

8/6/2019 2008 Led Making

17/32

8/6/2019 2008 Led Making

18/32

LEDLED M n f rin

2009

LED technologies

8/6/2019 2008 Led Making

19/32

Main Manufacturing Steps

-

SubstrateEpitaxy

Buffer layer

Epitaxy

Active layersAlNSiC InGaNLow T GaNSa hire

ep -wa erAlN/GaN sandwichSiliconBulk GaNComposite substrates

-Litho, etching, metallization

-level 0

Back-grinding Lateral LED structureDicing, Flip-chip LED dies-on-waferLED dies Vertical LED structureLaser Lift-Off: LLODie shaping

Binning, Pick-and-placePhosphor coating

Back-End

2009 19

eve

Sources: Yole Dveloppement Packaged LED LED lamp

LED technologiesPackaging, Housing

8/6/2019 2008 Led Making

20/32

Regular LED (white)

-1. Substrate: Wafer inspection

.

3. Litho 1: Mesa design4. Mesa etching: Dry etch

5. Ti + Ni contact deposition (PVD)

6. Litho 2: Ti + Ni etching

7. Dry etching Ti + Ni

2009 20 Regular LED

8/6/2019 2008 Led Making

21/32

Regular LED (white)

-

.

2. Chip bonding to the cathode3. Wire bonding x2

4. Phosphor coating

5. Epoxy-based main lens molding

2009 21 Regular LED

8/6/2019 2008 Led Making

22/32

Regular LED (white)

Costbreakdownfor100kx4"W earSubstrate Epitaxy

6.1%5.7%

OtherFE1.4%

OtherBE Phos hor32.0%.

2009 22 Regular LED

8/6/2019 2008 Led Making

23/32

Flux

Various techniques to improve

Techniques to improve LED efficiency

Material Front-End Back-End PackagingLaser Lift-Off

New growth Photonic PhosphorsTemporary bonding

substrates CrystalsVf

nn ng ColourSurface Flip-Chip with

texturing reflecting back contacts

Transparent topcontacts

Dicing / Scribing


8/6/2019 2008 Led Making

24/32

The perfect white LED would include

Grown on bulk or free-standing GaN substrate

emove su s ra e no grown on u - a Vertical design with back side contact: smaller chip e s ze oes no excee x mm

Transparent top contact (ITO or ZnO)

Textured top surface

Thin active layer


8/6/2019 2008 Led Making

25/32

Time-to-market for LED substrates

D

UH

B-L

GaN/bulk GaN

GaN/B-GaN/pAlNGaN/Sapphire

B-

LED

GaN/SiC GaN/B-Si/pSiC

GaN/AlN

GaN/Sapphire

GaN/SiC

RegularLED

GaN/SiliconGaN/Glass GaN/Ge

GaN/B-Si/pSiC

2009 25 New substrates2006 2007 20102008 2009 2011 2012

8/6/2019 2008 Led Making

26/32

$

Substrate Cost Comparison(taken from power electronics example)

GaN/ SiC GaN/SiGaN / Sapphire

Front-end$300

Pack. & test: $120

Front-end

Pack. & test: $80

Front-end

Pack. & test: $80

Epitaxy$300

Epitaxyu

$1,000

4 Silicon: $25

$300

4 Sapphire: $150

Total: $1,720 Total: $705Total: $830

2009 26 Cost Breakdown

8/6/2019 2008 Led Making

27/32

8/6/2019 2008 Led Making

28/32

Laser Lift Off Technique

The LLO technique is used to form thin GaN layers from Sapphiresubstrates to im rove both extraction and uantum efficienc .

Using UV laser, a 50nm of the GaN structure is thermall decomposed and delaminated from the substrate.

Main com anies that use the LLO technique: Osram

Lumileds

Unipress Korean companies

2009 28 Laser lift off Technique

8/6/2019 2008 Led Making

29/32

Scribing & Dicing

LED one-step dicing is progressively replaced by a two-step methodcom risin GaN scribin and substrate cuttin .

The GaN scribing step must be carried out with high precision. To havegood performance, the diodes must have very straight and smooth edges.This ste can be done b Laser or Diamond techni ues.

The cutting of the substrate requires less precision and aims to separatethe diodes. Diamond saws as well as scribe (by diamond or laser) andbreak techni ues are normall used.

Scribing Dicing

2009 29 Sapphire Scribing

courtesy of Oxford Lasers

0.4mm thickSapphire Diced byUVCVL of 255nm

courtesy of Oxford Lasers

Scribing and Dicing

8/6/2019 2008 Led Making

30/32

Binning Colour FluxVf

Binning refers to the classification of production yields.

Each part is binned for 3 parameters:

Color: Dominant/Peak Wavelength or Correlated Color

TemperatureVf: Forward Voltage

=

2009 30 Binning

8/6/2019 2008 Led Making

31/32

Binning Colour FluxVf

Binning operations result from a trade-off with theep axy process me.

Binning operations add substantial cost in the LEDmanu ac ur ng process.

Too severe binning criteria on the 3 parameters lead.

LED design has to be done to have as few bins as.

Vf is the easiest parameter to eliminate, so that.

2009 31 Binning

8/6/2019 2008 Led Making

32/32

Conclusions

Market LED backli htin a lications are a rice cuttin ame

Automotive and LCD TV backlight growing

General lighting: breakthroughs needed 150 lm/W at high current is threshold to penetrate this market segment

CREE, Nichia, Osram, Philips, and Toyoda Gosei Patents related to hos hor down-conversion solidif ositions

LED Performance, Manufacturing Technology & Materials High power LEDs generate only 25% of light versus 75% of heat or s e ng one a

everyeve

oe manu ac ur ng o s o mprove

efficiency and cost trade-offs occur at each level. New materials under development: 4 main trends

Large diameter: -> 6 (GaN/silicon, GaN/Glass, composite substrates) Monolithic white LED phosphor-free (Cermet: ZnO, CRHEA, Nanovation) AlN native substrates for UV-LED manufacturing

Single GaN substrate 2009 32 Conclusions

2008 led making

Documents