2011 ssl projectportfolio

7/30/2019 2011 Ssl Projectportfolio

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2011 PROJECT PORTFOLIO

SOLID-STATE LIGHTING

The U.S. Department of Energy (DOE) partners with industry, universities, and nationallaboratories to accelerate improvements in solid-state lighting (SSL) technology. Thesecollaborative, cost-shared efforts focus on developing an energy-efficient, full-spectrum, whitelight source for general illumination. DOE supports SSL research in six key areas: quantumefficiency, longevity, stability and control, packaging, infrastructure, and cost reduction.

The 2011 Project Portfolio: Solid-State Lightingprovides an overview of SSL projects currentlyfunded by DOE, and those completed from 2003 through 2010. Each profile includes a brieftechnical description, as well as information about project partners, funding, the research period,and whether the project was funded by the American Recovery and Reinvestment Act of 2009

(ARRA). The research described in the Portfolio changes, and the document will be updatedperiodically.

Projects described in the Portfolio are presented in alphabetical order by technology type,followed by funding source and investigating organization.

Prepared byD&R International, Ltd.

January 2011


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2011 Project Portfolio: Solid-State LightingJanuary 2011

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CONTENTS

Light Emitting Diodes

BUILDING TECHNOLOGIES PROGRAM/NETL

Core Technology IIIMulticolor, High Efficiency, Nanotextured LEDs ..............................................................1Yale University

Core Technology IVFundamental Studies of Higher Efficiency III-N LEDs for High-Efficiency High-PowerSolid-State Lighting ............................................................................................................3Georgia Tech Research Corporation

High Extraction Luminescent Materials for Solid State Lighting ......................................4PhosphorTech Corporation

Novel Defect Spectroscopy of InGaN Materials for Improved Green LEDs .....................5Sandia National Laboratories

Core Technology VHigh Efficiency Colloidal Quantum Dot Phosphors ..........................................................6Eastman Kodak

High Efficacy Green LEDs by Polarization Controlled Metalorganic Vapor Phase

Epitaxy ................................................................................................................................7Rensselaer Polytechnic Institute

Development of High Efficiency m-Plane LEDs on Low Defect Density Bulk GaNSubstrates ............................................................................................................................8Soraa, Inc.

Phosphors for Near UV-Emitting LEDs for Efficacious Generation of White Light .........9University of California, San Diego

Core Technology VI

Lattice Mismatched GaInP Alloys for Color Mixing White Light LEDs ........................10National Renewable Energy Laboratory

Semi-polar GaN Materials Technology for High IQE Green LEDs .................................11Sandia National Laboratories


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Exploiting Negative Polarization Charge at n-InGaN/p-GaN Heterointerfaces to AchieveHigh Power Green LEDs Without Efficiency Droop .......................................................12U.S. Army Research Laboratory

Low-Cost, Highly Lambertian Reflector Composite for Improved LED Fixture Efficiencyand Lifetime ......................................................................................................................13White Optics

Product Development VSSL Luminaire with Novel Driver Architecture ...............................................................14Cree, Inc.

Highly Efficient Small Form-Factor LED Retrofit Lamp ................................................15Osram Sylvania

High Efficiency Driving Electronics for General Illumination LED Luminaires ............16Philips Lighting

Product Development VIUltra-Compact High Efficiency Luminaire for General Illumination ..............................18Cree, Inc.

Optimized Phosphors for Warm White LED Light Engines ............................................19GE Global Research

Nitride and Oxynitride-Based Phosphor for Solid-State Lighting .....................................20

Lightscape Materials, Inc.

130 Lumens per Watt 1000 Lumen Warm White LED for Illumination .........................21Philips Lumileds Lighting, LLC

High Flux Commercial Illumination Solution with Intelligent Controls ..........................23Osram Sylvania

U.S. Manufacturing IAdvanced Epi Tools for Gallium Nitride Light Emitting Diode Devices ........................24Applied Materials, Inc.

Development of Advanced Manufacturing Methods for Warm-White LEDs for GeneralLighting .............................................................................................................................25GE Lighting Solutions LLC

Integrated Automated Yield Management and Defect Source Analysis Inspection Toolingand Software for LED .......................................................................................................26KLA-Tencor Corporation


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Low-Cost Illumination-Grade LEDs ................................................................................27Philips Lumileds Lighting, LLC

Low Cost Lithography for High Brightness LED Manufacturing .....................................28Ultratech, Inc.

Driving Down HB-LED Costs: Implementation of Process Simulation Tools andTemperature Control Methods for High Yield MOCVD .................................................30Veeco Process Equipment, Inc.

SMALL BUSINESS INNOVATION RESEARCH

Phase IDielectric Printed Circuit Board .......................................................................................31Advanced Cooling Technologies, Inc

Incorporated Smart and Efficient Driver for Big-Chip Photonic Lattice LEDs ...............32Luminus Devices

Off-Grid Solid-State Agricultural Lighting ......................................................................34Orbital Technologies Corporation


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Organic Light Emitting Diodes


Core Technology IIIInvestigation of Long-Term OLED Device Stability via Transmission ElectronMicroscopy Imaging of Cross-Sectioned OLED Devices ................................................36Lawrence Berkeley National Laboratory

Core Technology IVCharge Balance in Blue Electrophosphorescent Devices .................................................37Pacific Northwest National Laboratory

Core Technology VHigh Triplet Energy Transporting Materials and Increased Extraction Efficiency forOLED Lighting .................................................................................................................38

University of Florida

Top-Emitting White OLEDs with Ultrahigh Light Extraction Efficiency .......................39University of Florida

Core Technology VISolution Processable Transparent Conductive Hole Injection Electrode for OLED SSL 40Cambrios Technologies Corporation

Development of Stable Materials for High-Efficiency Blue OLEDs through RationalDesign ...............................................................................................................................41

Pacific Northwest National Laboratory

Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting Diodes ................................................................................................................42University of Rochester

Product Development IIIHigh Quantum Efficiency OLED Lighting Systems .........................................................43General Electric Global Research

Product Development IV

Application of Developed APCVD Transparent Conducting Oxides and UndercoatTechnologies for Economical OLED Lighting .................................................................44Arkema, Inc.

Product Development VSolution-Processed Small-Molecule OLED Luminaire for Interior Illumination ............45DuPont Displays, Inc.


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High Efficacy Integrated Under-Cabinet Phosphorescent OLED Lighting Systems ........46Universal Display Corporation

Product Development VILow Cost Integrated Substrate for OLED Lighting Development ...................................47

PPG Industries, Inc.

U.S. Manufacturing IRoll-to-Roll Solution-Processible Small-Molecule OLEDS .............................................48GE Global Research

Creation of a U.S. Phosphorescent OLED Lighting Panel Pilot Facility .........................49Universal Display Corporation


Phase ILow Cost, Scalable Manufacturing of Microlens Engineered Substrates (MLES) forEnhanced Light Extraction in OLED Devices ..................................................................50Sinmat, Inc.

Novel Optical Enhancement for Thin Phosphorescent OLED Lighting Panels ...............51Universal Display Corporation

Thermal Management of Phosphorescent Organic Light Emitting Devices ....................53Universal Display Corporation

Phase IIUltra High Efficiency Phosphorescent OLED Lighting ....................................................54Universal Display Corporation

Phase III XLERATOREnergy Saving Phosphorescent OLED Luminaires ..........................................................55Universal Display Corporation


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A-vi

APPENDIX



Boston UniversityBlue/UV LEDs with Very High Photon Conversion and Extraction Efficiency forWhite Lighting ............................................................................................................ A-1

Brown UniversityNanostructured High-Performance Ultraviolet and Blue LEDs ................................. A-2

Cabot Superior MicroPowdersDevelopment of Advanced LED Phosphors by Spray-Based Processes for Solid State

Lighting Applications ................................................................................................. A-3Carnegie Mellon

Novel Heterostructure Designs for Increased Internal Quantum Efficiencies in NitrideLEDs ........................................................................................................................... A-5

Cermet, Inc.Phosphor-Free Solid State Lighting Sources .............................................................. A-6

Color Kinetics IncorporatedAn Integrated Solid-State LED Luminaire for General Lighting ............................... A-8

Cree, Inc.Efficient White SSL Component for General Illumination ........................................ A-9High-Efficiency LED Lamp for Solid State Lighting ................................................ A-10LED Chips and Packaging for 120 LPW SSL Component ....................................... A-12Small-Area Array-Based LED Luminaire Design ..................................................... A-13White Light Emitting Diode Development for General Illumination Applications . A-14

Crystal IS, Inc.GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low DislocationDensity III-Nitride LEDs ........................................................................................... A-16

Eastman KodakQuantum-Dot Light Emitting Diode ......................................................................... A-18

General Electric Global ResearchAffordable High-Efficiency Solid-State Downlight Luminaires with NovelCooling ...................................................................................................................... A-19Phosphor Systems for Illumination Quality Solid State Lighting Products ............. A-21


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Georgia TechNovel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications ............................................................................. A-22

Georgia Tech Research CorporationEpitaxial Growth of GaN Based LED Structures on Sacrificial Substrates ............. A-24

Inlustra TechnologiesHigh-Efficiency Non-Polar GaN-Based LEDs .......................................................... A-25

Lehigh University Off. of Research & Sponsored ProEnhancement of Radiative Efficiency with Staggered InGaN Quantum Well LightEmitting Diodes ......................................................................................................... A-26

Light Prescriptions Innovators, LLC

SCALING UP: KiloLumen Solid State Lighting Exceeding 100 LPW via RemotePhosphor.................................................................................................................... A-28

LumiLeds Lighting U.S., LLCDevelopment of Key Technologies for White Lighting Based on LEDs ................. A-30

OSRAM Sylvania Development, Inc.High Quality Down Lighting Luminaire with 73% Overall System Efficiency ...... A-32

Osram Sylvania Products, Inc.White LED with High Package Extraction Efficiency ............................................. A-33

Philips Electronics North America CorporationAn Efficient LED System-in-Module for General Lighting Applications ............... A-34

Philips Lumileds Lighting, LLC100 Lumens per Watt 800 Lumen Warm White LED for Illumination ................... A-36

Purdue UniversityLow-Cost Substrates for High Performance Nanorod Array LEDs ......................... A-37

Rensselaer Polytechnic Institute

High Performance Green LEDs by Homoepitaxial MOVPE ................................... A-39

Research Triangle InstitutePhotoluminescent Nanofibers for High Efficiency Solid State Lighting Phosphors A-40


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A-viii

Sandia National LaboratoriesDevelopment of Bulk Gallium Nitride Growth Technique for Low Defect DensityLarge Area Native Substrates ................................................................................... A-42Development of White LEDs Using Nanophosphor-InP Blends ............................. A-43Improved InGaN Epitaxial Quality by Optimizing Growth Chemistry..................... A-44

Improved InGaN Epitaxy Yield by Precise Temperature Measurement .................. A-46Innovative Strain-Engineered InGaN Materials of High Efficiency Green LightEmission .................................................................................................................... A-47Investigation of Surface Plasmon Mediated Emission From InGaN LEDs Using Nano-Patterned Films ......................................................................................................... A-48Nanostructural Engineering of Nitride Nucleation Layers for GaN Substrate DislocationReduction .................................................................................................................. A-49Nanowire Templated Lateral Epitaxial Growth of Low Dislocation Density GaN .. A-50Novel ScGaN and YGaN Alloys for High Efficiency Light Emitters ...................... A-51Ultrahigh-Efficiency Microcavity Photonic Crystal LEDs ....................................... A-52

Technologies and Devices InternationalUltra High p-Doping Materials Research for GaN Based Light Emitters ................ A-53

University of California, San DiegoDevelopment of White-Light Emitting Active Layers in Nitride-Based Heterostructuresfor Phosphorless Solid State Lighting ....................................................................... A-54

University of California, Santa BarbaraHigh-Efficiency Nitride-Based Photonic Crystal Light Sources .............................. A-55


ZnO PN Junctions for Highly Efficient, Low-Cost Light Emitting Diodes ............. A-56

EE SCIENCE INITIATIVE

Georgia TechInnovative Development of Next-Generation and Energy-Efficient Solid State LightSources for General Illumination .............................................................................. A-58

Sandia National LaboratoriesDevelopment of Photonic-Crystal LEDs for Solid State Lighting ........................... A-60

University of California, San DiegoImproving the Efficiency of Solid State Light Sources ............................................ A-63

University of California, Santa BarbaraHigh-Efficiency Nitride-Based Solid State Lighting ................................................ A-64


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A-ix

University of GeorgiaDevelopment of UV-LED Phosphor Coatings for High-Efficiency Solid StateLighting ...................................................................................................................... A-66


Aguila Technologies, Inc.Sintered Conductive Adhesives for HB-LED Thermal Management ...................... A-67

AqwestThermal Management for High-Brightness LEDs .................................................... A-68

Boston Applied TechnologyAn Advanced Nanophosphor Technology for General Illumination (Phase I) ........ A-69

Cermet Inc.

Ultraviolet LEDs for Solid State Lighting ................................................................ A-70

Dot Metrics TechnologiesNovel Active Layer Nanostructures for White Light Emitting Diodes (Phase I) ..... A-72

Fairfield Crystal Technology, LLCA Novel Growth Technique for Large Diameter AlN Single Crystals (Phase I) ..... A-74A Novel Growth Technique for Large Diameter AlN Single Crystal Substrates(Phase II) ................................................................................................................... A-75

InnovaLight

Development of Silicon Nanocrystals as High-Efficiency White Phosphors ........... A-76

Intelligent Optical SystemsGeneral Illumination Using Dye-Doped Polymer LEDs .......................................... A-78

K Technology CorporationAdvanced Materials for Thermal Management in III-Nitride LEDS (Phase I) ........ A-80

Kyma TechnologiesGallium Nitride Substrates for Improved Solid State Lighting ................................ A-81

Nanocrystals TechnologyEnhanced Optical Efficiency Package Incorporating Nanotechnology BasedDownconverter and High Refractive Index Encapsulant for AlInGaN High FluxWhite LED Lamp with High Luminous Efficiency LED Phosphor Performance(Phase I) .................................................................................................................... A-83


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A-x

Nanomaterials & Nanofabrication Laboratories (NN-Labs, LLC)Improved Light Extraction Efficiencies of White pc-LEDs for SSL by Using Non-Toxic, Non-Scattering, Bright, and Stable Doped ZnSe Quantum Dot Nanophosphors(Phase I) .................................................................................................................... A-85

Nanosys, Inc.High-Efficiency Nanocomposite White Light Phosphors (Phase I) ......................... A-87High-Efficiency Nanocomposite White Light Phosphors (Phase II) ......................... A-88

NomadicsNew, Efficient Nano-Phase Materials for Blue and Deep Green Light Emitting Diodes(Phase I) .................................................................................................................... A-89

PhosphorTech CorporationEfficient Hybrid Phosphors for Blue Solid State LEDs ............................................ A-91High-Extraction Luminescent Material Structures for Solid State Light Emitting Diodes

(Phase I) .................................................................................................................... A-92Manufacturing Process for Novel State Lighting Phosphors (Phase I) .................... A-94

Physical Optics CorporationBuilt-In Electrofluidic Thermo-Management of Solid-State Illumination Arrays ... A-95Microporous Alumina Confined Nanowire Inorganic Phosphor Film for Solid StateLighting (Phase I) ..................................................................................................... A-97

SynDiTec, Inc.Sliding Mode Pulsed Current IC Drivers for High Brightness Light EmittingDiodes ....................................................................................................................... A-98

Technologies and Devices InternationalNovel Low-Cost Technology for Solid State Lighting (Phase I) ........................... A-100Novel Low-Cost Technology for Solid State Lighting (Phase II) .......................... A-102

ZN TechnologyHigh-Efficiency ZnO-Based LEDs on Conductive ZnO Substrates for GeneralIllumination (Phase I) ............................................................................................. A-104


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A-xi



Add-Vision, Inc.Low Cost, High Efficiency Polymer OLEDs Based on Stable p-i-n DeviceArchitecture ............................................................................................................. A-106

Agiltron, Inc.Next Generation Hole Injection/Transport Nano-Composites for High EfficiencyOLED Development ............................................................................................... A-107

Argonne National LaboratoryLow Cost Transparent Conducting Nanoparticle Networks for OLED Electrodes A-108

Dow Corning Corporation

Thin Film Packaging Solutions for High-Efficiency OLED Lighting Products ..... A-109

Eastman KodakOLED Lighting Device Architecture ...................................................................... A-111

General Electric Global ResearchHigh-Efficiency, Illumination Quality White OLEDs for Lighting ....................... A-112OLED Durability and Performance ........................................................................ A-113

Lawrence Berkeley National LaboratoryHigh Efficiency Long Lifetime OLEDs with Stable Cathode Nanostructures ....... A-115

Los Alamos National LaboratoryHigh Quality Low Cost Transparent Conductive Oxides ....................................... A-116Hybrid Nanoparticle/Organic Semiconductors for Efficient Solid State Lighting . A-117Material and Device Designs for Practical Organic Lighting ................................. A-118

Oak Ridge National LaboratoryLow-Cost Nano-Engineered Transparent Electrodes for Highly Efficient OLEDLighting ................................................................................................................... A-119

OSRAM Opto Semiconductors

Polymer OLED White Light Development Program .............................................. A-120

Pacific Northwest National LaboratoryHigh Stability Organic Molecular Dopants for Maximum Power EfficiencyOLEDs .................................................................................................................... A-121Novel Organic Molecules for High-Efficiency Blue OrganicElectroLuminescence .............................................................................................. A-122


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Novel High Work Function Transparent Conductive Oxides for Organic Solid-StateLighting Using Combinatorial Techniques ............................................................. A-124

QD Vision, Inc.Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting ....... A-126

SRI InternationalCavity Light Emitting Diode for Durable, High Brightness and High-EfficiencyLighting Applications .............................................................................................. A-127

Universal Display CorporationDevelopment of High Efficacy, Low Cost Phosphorescent OLED Lighting CeilingLuminaire System ................................................................................................... A-128Novel Low-Cost Organic Vapor Jet Printing of Striped High-Efficiency PhosphorescentOLEDs for White Lighting ..................................................................................... A-129

University of California, Santa BarbaraSurface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes ........ A-130

University of FloridaHigh Efficiency Microcavity OLED Devices with Down-Conversion Phosphors . A-131

University of North TexasMulti-Faceted Scientific Strategies Toward Better SSL of PhosphorescentOLEDs ..................................................................................................................... A-132

University of Southern California

Novel Materials for High-Efficiency White Phosphorescent OLEDs .................... A-134


Add-Vision, Inc.Materials Degradation Analysis and Development to Enable Ultra Low Cost, Web-Processed White P-OLED (Phase I) ....................................................................... A-136Materials Degradation Analysis and Development to Enable Ultra Low Cost, Web-Processed White P-OLED for SSL (Phase II) ........................................................ A-138

Agiltron, Inc.

Enhancing Charge Injection and Device Integrity in Organic LEDs (Phase I) ...... A-139Enhancing Charge Injection and Device Integrity in Organic OLEDs (Phase II) .. A-141

Alameda Applied Sciences Corp.Flexible Environmental Barrier Technology for OLEDs (Phase I) ........................ A-143

InnovaLight


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A-xiii

High-Performance, Silicon Nanocrystal-Enhanced Organic Light Emitting Diodes forGeneral Lighting (Phase I) ...................................................................................... A-145


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A-xiv

International Technology ExchangeNew Stable Cathode Materials for OLEDs (Phase I ) ............................................ A-147New Stable Cathode Materials for OLEDs (Phase II) ............................................ A-149

Materials Modification, Inc.

Zinc Oxide-Based Light Emitting Diodes (Phase I) ............................................... A-151Zinc Oxide-Based Light Emitting Diodes (Phase II) .............................................. A-152

MaxdemNew Solid State Lighting Materials (Phase I) ........................................................ A-153New Solid State Lighting Materials (Phase II) ....................................................... A-154

NanoTex CorporationEfficient Nanotube OLEDs (Phase I) ..................................................................... A-155

Physical Optics Corporation

Highly Efficiency Organic Light-Emitting Devices for General Illumination(Phase I) .................................................................................................................. A-156High Efficiency Organic Light-Emitting Devices for General Illumination(Phase II) ................................................................................................................. A-157

ReveoPolymer White Light Emitting Devices (Phase I) .................................................. A-158

T/J Technologies, Inc.Polymer Composite Barrier System for Encapsulating LEDs (Phase I) ................. A-160

TDA Research, Inc.New Low Work Function, Transparent Electrodes for Robust Inverted-DesignOLEDs .................................................................................................................... A-162

Universal Display CorporationEfficient Large Area WOLED Lighting (Phase II) ................................................. A-164Enhanced Light Outcoupling in WOLEDs ............................................................. A-165High Efficacy Phosphorescent SOLED Lighting (Phase II) ................................... A-167High Efficiency White TOLED Devices for Lighting Applications (Phase I) ....... A-168High Efficiency White TOLED Devices for Lighting Applications (Phase II) ...... A-169High Stability White SOLEDs (Phase I) ................................................................ A-171

High-Efficiency White Phosphorescent OLEDs (Phase I) ..................................... A-172High-Recombination Efficiency White Phosphorescent Organic Light Emitting Devices(Phase I) .................................................................................................................. A-173High-Recombination Efficiency White Phosphorescent Organic Light Emitting Devices(Phase II) ................................................................................................................. A-174Low-Voltage, High-Efficiency White Phosphorescent OLEDs for LightingApplications (Phase II) ........................................................................................... A-175Monomer-Excimer Phosphorescent OLEDs for General Lighting (Phase I ) ........ A-177


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Novel High Efficiency High CRI Phosphorescent OLED Lighting Containing TwoBroad Emitters (Phase I) ......................................................................................... A-179Novel High-Performance OLED Sources (Phase II) .............................................. A-180Novel Light Extraction Enhancements for White Phosphorescent OLEDs(Phase I ) ................................................................................................................. A-182

Novel Light Extraction Enhancements for White Phosphorescent OLEDs(Phase II) ................................................................................................................. A-184Novel Lower-Voltage OLEDs for High-Efficiency Lighting (Phase I ) ................ A-185Novel Plastic Substrates for Very High Efficiency OLED Lighting (Phase I) ....... A-187Stable, Efficient, Large Area WOLED (Phase I) .................................................... A-188White Illumination Sources Using Striped Phosphorescent OLEDs (Phase I ) ...... A-189WOLEDs Containing Two Broad Emitters (Phase II) ........................................... A-191


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Active Projects


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Multicolor, High Efficiency, Nanotextured LEDs

Investigating Organization

Yale University

Principal Investigator(s)

Dr. Jung Han

Subcontractor

Brown University

Funding Source

Building Technologies Program/NETL

Award

DOE Share: $900,000Contractor Share: $225,153

Contract Period

10/1/2007 - 9/30/2011

Technology


Project Summary

The goal of this project is to create a new class of active medium with an amplifiedradiation efficiency capable of near-unity electron-to-photon conversion for solid statelighting applications. The target is to reach 120 lm/W luminous efficacy of at least 550nm and produce intellectual impacts to the SSL technology based on three innovativeconcepts:

1) Self-assembled synthesis of textured arrays of InGaN nano-medium for enhancedquantum confinement and radiation cross section,

2) Near-field resonant enhancement of spontaneous and stimulated emission in elicitingmaximum photon generation, and

3) Concurrent nanoscale growth of InGaN on polar, non-polar, and semi-polar planes forenhanced multicolor emission.

The objective in Phase I is to achieve mechanistic understanding of nanophotonicenhancement and nanoscale synthesis science in order to consolidate experience andsuccess pertaining to SSL. The objective of Phase II is to achieve near-unity IQE fromInGaN nano-textured medium on non-polar surfaces. The incorporation of such


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nanostructures active medium into electrically injected device, with above 120 lm/Wluminous efficacy, will be the ultimate goal in Phase III.

The proposed research seeks to explore and integrate unique nanoscale phenomenapertaining to SSL applications, including nanostructure induced carrier confinement,

enhanced sub-wavelength scattering and light extraction, single-crystalline dislocation-free synthesis of active medium, and simultaneous nano-epitaxy on polar, semi-polar, andnon-polar templates.


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Fundamental Studies of Higher Efficiency IIIN LEDs forHighEfficiency HighPower SolidState Lighting


Georgia Tech Research Corporation


Russell Dupuis

Subcontractor

Arizona State University

Funding Source


AwardDOE Share: $1,503,626Contractor Share: $698,473

Contract Period

9/1/2008 - 8/30/2011

Technology


Project Summary

The goal of this project is to understand in a fundamental way the impact of strain,defects, polarization, Stokes loss, and unique device active region designs upon theinternal quantum efficiency (IQE) of III-N LEDs and to employ this understanding in thedesign and growth of high-efficiency LEDs. This information will be the underpinningused to provide advanced device designs that lead to improved device performance athigh current densities. This new understanding will be applied to the development ofprototype III-N LEDs in green spectral region with IQE that exceed current-generationproduction devices by a factor of higher than 2 (from 45% at 525nm and 25% at 540nm) with the ultimate goal of achieving visible LEDs having IQE valuesof ~90% by 2025.


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High Extraction Luminescent Materials for

Solid State Lighting


PhosphorTech Corporation


Chris Summers

Subcontractor

None

Funding Source



Contract Period

6/1/2008 - 7/31/2011

Technology


Project Summary

The main objective of this program is to develop high extraction phosphor systems. Theapproach for achieving the high efficiency goals is based on maximizing the extractionand quantum efficiencies of the phosphor materials at the LED operating temperatures.This is a comprehensive program for the refinement of its patented sulfoselenide systemsas well as the development of new bulk and nanocrystalline derivatives with improvedQY, thermal and chemical stability.


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Novel Defect Spectroscopy of InGaN Materials for

Improved Green LEDs


Sandia National Laboratories


Andrew Armstrong

Subcontractor

None

Funding Source


AwardDOE Share: $1,340,000

Contract Period

4/1/2008 - 3/31/2011

Technology


Project Summary

The goal of this research is to develop a novel quantitative, nanoscale depth-resolveddeep level defect spectroscopy methodology applicable to InGaN thin films like thosefound in the active regions of InGaN/GaN green LEDs and to LEDs themselves. Bymonitoring defect incorporation as a function of systematically varied growth conditions,optimized growth of InGaN films with minimized defect concentration will bedemonstrated. Using the optimized growth conditions, QWs and LEDs will becharacterized to demonstrate improvements in IQE and EQE, respectively. Also, defectspectroscopy directly applicable to LEDs will be developed to determine any impact thatdefects have on efficiency roll-off at high current density. The enhanced understandingand mitigation of the impact of defects on LED performance is anticipated to enable moreefficient green LEDs and advance SSL technology.


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High Efficiency Colloidal Quantum Dot Phosphors


Eastman Kodak


Keith Kahen

Subcontractor

None

Funding Source


Award

DOE Share: $1,539,183Contractor Share: $513,061

Contract Period

9/1/2009 - 11/30/2012

Technology


Project Summary

The objective is to create white LEDs composed of blue LEDs and colloidal red, green,and blue quantum dot phosphors. Quantum dot phosphors have the advantages overconventional phosphors of very low optical scattering and the ability to create customLED system spectral responses. The final material properties will be red, green, and bluequantum dot phosphor films having quantum efficiencies greater than 90%, opticalscattering losses of less than 5%, and very good temperature stability up to 150 C. Inaddition, the formulated white LED will have a correlated color temperature ofapproximately 4100 K and an average color rendering index greater than 90.


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High Efficacy Green LEDs by Polarization Controlled

Metalorganic Vapor Phase Epitaxy


Rensselaer Polytechnic Institute


Christian Wetzel

Subcontractor

Kyma Technologies

Funding Source



Contract Period

8/28/2009 - 8/27/2012

Technology


Project Summary

The internal quantum efficiency in visible green and deep green light emitting diode(LED) epi material shall be enhanced in metal organic vapor phase epitaxy ofpiezoelectric GaInN/GaN heterostructures. The approach combines polarization control,including growth along non-polar directions of the material, avoidance of crystallinedefects, and quantitative assessment of the internal quantum efficiency, to enhance theefficiency at which light is generated within the LED. The team expects to double or eventriple the efficiency of green (525 nm) and deep green (555 nm) for the purpose of all-color direct emitting LEDs and so boost the overall lighting efficiency and colorrendering fidelity in the interest of the lighting consumer.


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Development of High Efficiency m-Plane LEDs on

Low Defect Density Bulk GaN Substrates


Soraa, Inc.


Aurelian David

Subcontractor

None

Funding Source



Contract Period

10/1/2009 - 1/31/2012

Technology


Project Summary

The objective of the research is to grow nonpolar m-plane devices on low defect densitybulk GaN substrates for high efficiency GaN-based light emitting diodes (LEDs). Withthis approach, it is anticipated that peak IQE values >90% are achievable over a widewavelength range. Phase I efforts will focus on growth of high quality 405nm and 450nmm-plane LEDs and performing IQE measurements with the goal of demonstrating >80%peak IQE. Phase I efforts will also explore the physical mechanisms behind IQEdegradation at high pump densities through IQE measurements of m-plane LEDstructures with varying active region designs. Fabrication of initial 405 nm and 450 nmm-plane LEDs will occur in Phase I based upon high IQE structures as determined byexperimental data.


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Phosphors for Near UV-Emitting LEDs for

Efficacious Generation of White Light


University of California, San Diego


Joanna McKittrick

Subcontractor

Osram Sylvania Products, Inc.

Funding Source



Contract Period

10/1/2009 - 3/31/2013

Technology


Project Summary

The overall objective is to develop and optimize nano- and submicronsize blue-, red- andparticularly green-emitting phosphors with quantum efficiency, exceeding 95% inresponse to excitation in the spectral region of 380-400 nm, and to design a layer of thesephosphors by an electrophoretic deposition process for maximum light extraction in"remote phosphor application" mode. These phosphors will be optimized for strongabsorption and high quantum efficiency in the 380-400 nm range, the excitationwavelength for UV-emitting diodes, negligible visible absorption and low scatteringcoefficient both in the visible and UV region. The performance of these phosphor filmswill be tested in commercially available light emitting diodes that emit in the 380-400 nmrange. Their ultimate goal is to fabricate a solid state lighting (SSL) source with high

overall efficacy of close to 140 LPW and increased stability compared to currentlyavailable SSL sources.


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Lattice Mismatched GaInP Alloys for

Color Mixing White Light LEDs


National Renewable Energy Laboratory


Angelo Mascarenhas

Subcontractor

None

Funding Source

Building Technologies Program/NETLAmerican Recovery and Reinvestment Act of 2009

Award

DOE Share: $1,680,000

Contract Period

3/31/2010 - 3/30/2013

Technology


Project Summary

This project aims to test two scientific principles recently demonstrated at NREL, onerelated to growth of high bandgap GaxIn1-xP (GaInP) epilayers on GaAs for advancedmulti-junction solar cells and the potential advantages in applying this new technologyfor synthesizing LEDs operating in the green and red gap spectral regions, and the otherrelated to forming cladding layers for high bandgap GaInP LED active regions usingGaxIn1-xP disorder-order heterojunctions.


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Semi-polar GaN Materials Technology for

High IQE Green LEDs


Sandia National Laboratories


Daniel D. Koleske

Subcontractor

None

Funding Source


Award

DOE Share: $1,680,000

Contract Period

1/15/2010 - 1/14/2012

Technology


Project Summary

The goal of the proposed work is to improve the IQE in green nitride-based LEDsstructures by using semi-polar GaN planar orientations for InGaN multiple quantum well(MQW) growth. These semi-polar orientations have the advantage of significantlyreducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap.

In addition, semipolar surfaces potentially provide a more favorable surface bondingenvironment for indium incorporation, enabling higher indium concentrations in theInGaN MQW. The goal of this proposal is to select the optimal semipolar orientation thatproduces the highest IQE by exploring wafer miscuts around this orientation. At the end

of this program we expect MQW active regions at 540 nm with an IQE of 50%, whichwith an 80% light extraction efficiency should produce LEDs with an EQE of 40%, i.e.twice the estimated current state-of-the-art.


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Exploiting Negative Polarization Charge at nInGaN/pGaNHeterointerfaces to Achieve High Power Green LEDs

Without Efficiency Droop


US Army Research Laboratory


Dr. Meredith Reed

Subcontractor

None

Funding Source


Award

DOE Share: $1,801,236

Contract Period

11/23/2009 - 12/22/2012

Technology


Project Summary

Nitride semiconductor LEDs fail to simultaneously achieve high power and highefficiency required for general illumination applications due to efficiency droop at highcurrent densities (> ~ 10 A/cm2). This project will seek to exploit negative polarizationcharge at N InGaN P GaN heterointerfaces to achieve high power Green LEDs withoutefficiency droop.


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LowCost, Highly Lambertian Reflector Composite forImproved LED Fixture Efficiency and Lifetime


White Optics


Eric Teather

Subcontractor

University of Delaware

Funding Source


Award


Contract Period

2/16/2010 - 2/15/2013

Technology


Project Summary

Overall objective is to demonstrate a 98% or greater reflective, highly diffuse, low-costcomposite material that is able to withstand 50,000 hours or greater luminaire operationunder expected LED system thermal and environmental operating extremes. The materialwill enable increased efficiencies for SSL luminaires and subsequent reduced systemtemperatures for extended life while remaining color neutral. The program willdemonstrate application options and related cost to optimize system manufacturabilityand ultimately reduce cost for SSL luminaires.


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SSL Luminaire with Novel Driver Architecture


Cree, Inc.


Dr. Sten Heikman

Subcontractor

None

Funding Source


Award


Contract Period

7/7/2009 - 7/6/2011

Technology


Project Summary

The objective of the proposed program is to create an 81 LPW SSL luminaire that emitsat a color temperature of 2700K with a CRI > 90. The project will involve an integrateddevelopment effort tailoring the LED chip characteristics to enable a high efficiencydriver. This synergistic approach will establish a technology platform capable ofproviding high efficiency components, drivers and luminaires.


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Highly Efficient Small Form-Factor LED Retrofit Lamp


Osram Sylvania


Mr. Steven Allen

Subcontractor

None

Funding Source


Award


Contract Period

10/1/2009 - 9/30/2011

Technology


Project Summary

The project objective is to develop a small form-factor retrofit lamp consisting of a lightengine, optics, drive electronics, and thermal management. The lamp will be suitable forincandescent of halogen replacements in both commercial and residential applications.The light engine will feature a compact multi-chip LED source with a phosphorconversion layer. A unique device structure enables high optical efficiencies andexcellent thermal management. The required luminous flux can be generated from arelatively small area without reaching excessive temperatures. Advantages of this lightengine will include improved light extraction and lower junction/phosphor temperaturescompared to current LED technology. These improvements make possible high intensity,small form factor devices where thermal dissipation options are limited. Steady-stateperformance targets are >500 lumens and > 100 lm/W efficacy at 3500K.


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High Efficiency Driving Electronics for

General Illumination LED Luminaires


Philips Lighting


Anand Upadhyay

Subcontractor

None

Funding Source



Contract Period

7/8/2009 - 10/31/2011

Technology


Project Summary

The project objective is to produce the first product in a new generation of SSL drivers,with lower cost, smaller size and higher efficiency than present SSL drivers. Driverefficiency would be approx 90%. Driver size would be 6in3 for a 20W driver and higherproportionately for higher powers. The high volume cost target is $0.12/Watt. Life timeat or below 60C ambient, will be 50,000 hours. The product will be brought to thestage of a completed pilot run and subsequent release for limited production. The projectapproach is to use the first year to investigate the many possible SMPS topologies,including hard-switched, switch-resonant and load-resonant topologies, and the secondyear to turn the most promising topology, selected at the end of the first year, into aproduct. First year investigation is completed and following 4 products are planned based

on this investigation:

1.40W single-stage Flyback: Value-engineering improvements to the single-stageflyback topology indicate size goal will be reached. Efficiency and cost goals will bemarginal. There would be efficiency, performance and cost tradeoffs. 40W dual stage(PFC+LLC):


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2.Efficiency goal will be reached, but cost would be higher. The size reduction will alsonot be achieved.

3.75W dual stage (PFC+LLC): Efficiency goal will be reached. Size goal will bereached. Size reduction of 33% expected over current products. Cost numbers are

being worked out. Cost goals may be marginal.

4.150W dual stage (PFC+LLC): Efficiency goal will be reached, cost goal will beexceeded (expect ~11/W). However size reduction is limited not due to componentsizing point of view but thermal cooling point of view.


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Ultra-Compact High Efficiency Luminaire for

General Illumination


Cree, Inc.


Ted Lowes

Subcontractor

None

Funding Source


Award


Contract Period

2/25/2010 - 2/24/2012

Technology


Project Summary

To create an ultra-compact 80 LPW SSL luminaire that emits at a color temperature of3000K with a CRI of 90. The project will involve synergetic LED component, optics,thermal management and driver developments to enable the specified luminaireperformance. This integrated approach will establish a technology platform capable ofproviding high efficiency LED components that can be adopted across a variety of SSLapplications.


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Optimized Phosphors for Warm White LED Light Engines


GE Global Research


Anant Setlur

Subcontractor

GE Lighting Solutions LLCUniversity of Georgia

Funding Source


Award


Contract Period

3/16/2010 - 3/15/2012

Technology


Project Summary

The objective of this project is to develop optimized phosphors and light engines thatmaximize phosphor down-conversion efficiency and lamp efficacy while retaining thenecessary color quality to enable market penetration versus halogen, compact fluorescent,and incandescent lighting. The project goals are to deliver 350 and 700 lumen lightengines (using LEDs with 60% wall-plug efficiency) with:

105120 lm/W steady-state efficacy at 350 mA with only passive coolingCCT85 with distance


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Nitride and Oxynitride-Based Phosphors for

Solid-State Lighting


Lightscape Materials, Inc.


Yongchi Tian

Subcontractor

None

Funding Source


Award


Contract Period

4/1/2010 - 10/14/2011

Technology


Project Summary

The objective of the project is to advance the technology of the nitride/oxynitridephosphors for solid-state lighting (SSL) from the current level of maturity of appliedresearch to advanced engineering development. This objective will be accomplishedthrough the optimization of novel nitride/oxynitride phosphors and establishment of cost-effective preparation processes for the phosphors. The target performances of thephosphors are:

High luminescence efficiency: Quantum Yield = 90%Superior thermal stability of luminescence: Thermal quench loss 90% after 5,000 hours at

85 C and 85% relative humidity

Scattering loss < 10%Cost-effective processes of preparing the phosphors.


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130 Lumens per Watt 1000 Lumen Warm White LED

for Illumination


Philips Lumileds Lighting, LLC


Decai Sun

Subcontractor

None

Funding Source


Award


Contract Period

6/15/2010 - 6/14/2012

Technology


Project Summary

Rapid progress has been made in improving the performance of phosphor convertedInGaN white light emitting diodes (LEDs) over last few years. Efficacies of blue LEDpumped white phosphor solutions have increased to over 110 lm/W in cool white LEDscommercially available. As for warm white LED performance, it still lags behind coolwhite LED by up to 50% in efficacy and light output, depending on correlated colortemperature (CCT) and color rendering index values (CRI). Warm white LEDs are thekey light source to replace incandescent, halogen and compact fluorescent lamps forillumination applications. Further improvement in warm white LED efficacy is needed toenable wide adoption of LED based luminaires in general illumination.

The objective of this program is to develop warm white light LEDs used most incommercial and residential applications and will deliver an illumination grade warmwhite LED having a CCT range between 2700 K and 3500 K, 1000 lm output and anefficacy of 130 lm/W. The CRI for this LED will be over 80. The LED will contain a 2x2mm2 InGaN die and a warm white phosphor Lumiramic plate in a solder-freeleadframe package. The LED will have a thermal resistance below 2 K/W. The LEDpackage can be easily assembled in a luminaire and be replaced easily if needed. It will


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eliminate a thermal interface by mounting directly on a heat sink instead of a PCB thusresulting in assembly cost reduction and a system level thermal performance andreliability improvement. A combination of improvements in Internal QuantumEfficiency, Injection Efficiency, Extraction Efficiency and Phosphor ConversionEfficiency will be combined to achieve the efficacy and luminous flux targets. The

resulting LED will be an ideal light source for use in a luminaire product as replacementfor incandescent and Halogen reflector and general purpose lamps of similar lumenvalue. We will also focus on the LED package design and development for low cost totarget below $2.00 for the LED package in high volume. Using reasonable assumptionsfor cost and market penetration, it is expected that at maximum market penetration theuse of such LED based luminaires will result in an energy saving of 0.93 Quads/yr and areduction in carbon emission of 15.2 MMTC/yr.

The proposed project will be conducted at Philips Lumileds Lighting Companyheadquartered in San Jose, California, a pioneer and leader in manufacture andapplication of high power LEDs.


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High Flux Commercial Illumination Solution with

Intelligent Controls


Osram Sylvania


Camil Ghiu

Subcontractor

None

Funding Source


Award


Contract Period

4/1/2010 - 3/31/2012

Technology


Project Summary

The objective of this project is to develop a LED based luminaire to replace existing2' x 4' luminaires that use fluorescent lamps. These luminaires are commonly used incommercial and retail areas that require good illuminance uniformity on work surfaceswith dark spot elimination and high visual perception.

The replacement solution consists of a metal housing enclosing a custom-developed lightengine, intelligent control electronics, and a power supply. The intelligent controls senseoccupancy and ambient lighting conditions then use switching and dimming to gainadditional energy savings.

The proposed luminaire will deliver 6500 lm at a correlated color temperature of 3500 K.A 92 lm/W steady state efficacy at the luminaire level is targeted.


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Advanced Epi Tools for Gallium Nitride

Light Emitting Diode Devices


Applied Materials, Inc.


Nag Patibandla

Subcontractor

None

Funding Source


Award

DOE Share: $3,993,892Contractor Share: $4,100,577

Contract Period

6/1/2010 - 5/31/2012

Technology


Project Summary

To develop a three-chamber epi growth system with lamp heating, and automated in-situcleaning for low cost HB-LED manufacturing. The system will be capable of growinghigh-quality LEDs on all substrate materials currently in use or under discussion. It willcontain a 350-mm platter that holds 28 two-inch wafers that can also accommodate largersubstrates. We will build it on the successful Applied Materials CenturaTMplatform, thestandard for growing low-cost, high-quality, epitaxial wafers in the integrated circuitindustry.


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Development of Advanced Manufacturing Methods for

Warm-White LEDs for General Lighting


GE Lighting Solutions LLC


Dr. Anirudha Deshpande

Subcontractor

None

Funding Source


Award


Contract Period

4/1/2010 - 12/31/2011

Technology


Project Summary

GE Lighting Solutions currently manufactures the Vio platform of LEDs in the US attheir East Cleveland, Ohio facility. Under this proposal, they will design and developspecialized manufacturing methods for improving the consistency and material/laborproductivity of the "remote" phosphor component of these LEDs. In addition, the entireLED packaging line will be redesigned for high volume throughput by applyingautomation and using electronics assembly standards to demonstrate cost savingsachievable.


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Integrated Automated Yield Management and Defect Source

Analysis Inspection Tooling and Software for LED


KLA-Tencor Corporation


Mr. Steven Meeks

Subcontractor


Funding Source


Award


Contract Period

3/15/2010 - 3/14/2012

Technology


Project Summary

The primary objective of this program is to improve product yield for High BrightnessLED (HBLED) manufacturing and to reduce product development and factory ramptimes by providing optimized automated inspection tooling and software for thisemerging industry.


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Low-Cost Illumination-Grade LEDs




Michael Craven

Subcontractor

None

Funding Source


AwardDOE Share: $1,907,963Contractor Share: $1,907,963

Contract Period

6/1/2010 - 5/31/2012

Technology


Project Summary

The project objective is to realize illumination-grade high-power LED lampsmanufactured from a low-cost epitaxy process employing 150mm silicon substrates. Thereplacement of industry-standard sapphire epitaxy substrates with silicon is projected toenable an overall 60% epitaxy cost reduction. The cost reduction will be achieved viasubstrate material cost reduction and anticipated improvements in epi uniformity andyield. The epitaxy technology development will be complemented by a chip developmenteffort in order to deliver warm-white LUXEON Rebel lamps that target Lm/Wperformance in line with DOE SSL Manufacturing roadmaps.


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Low Cost Lithography for

High Brightness LED Manufacturing


Ultratech, Inc.


Andrew Hawryluk

Subcontractor

SemiLEDs

Funding Source


Award


Contract Period

4/15/2010 - 4/14/2012

Technology


Project Summary

The objective of the project is to reduce the Cost of Ownership (CoO) of lithography forhigh volume manufacturing of High Brightness LEDs and to reduce the initial capitalexpenditures (CapEx) for these tools.

The CapEx itself will be reduced primarily through a cost-reduction program that targetsthe high cost-centers in the tool that are unnecessary for HB-LED manufacturing. Themanufacturing cost of the lithography tool will be substantially reduced through the useof a new lens design and a new illuminator design. The goal is to reduce the CapEx of thetool by 40%, lowering it from approximately $1.6M to $1.0M.

The Cost of Ownership will be reduced by several factors, one of which is the reductionin the CapEx itself. Other contributors include higher throughput, better automation andhigher yields.

This tool will utilize a higher brightness illuminator which will directly lead to higherthroughputs.


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In addition, the approach will improve the material handling system of the stepper toimprove its ability to handle the extremely warped LED substrates without operatorintervention, allowing the tool to operate in an automated mode. The tool is also designedto be able to quickly accommodate changes in wafer sizes. Finally, higher yields (throughbetter linewidth control and better overlay) will reduce the CoO. All of these will

improve the yields of LEDs. Estimates received from some manufacturers using contactprinters indicate that yields of LEDs are ~60%, whereas yield estimates frommanufacturers using projection lithography are above 90%.


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Driving Down HB-LED Costs: Implementation of Process

Simulation Tools and Temperature Control Methods for

High Yield MOCVD


Veeco Process Equipment, Inc.


William Quinn

Subcontractor

Philips Lumileds Lighting, LLCSandia National Laboratories

Funding Source


Award


Contract Period

5/1/2010 - 4/30/2012

Technology


Project Summary

The overall objective of this multi-faceted program is to develop epitaxial growthsystems that meet a goal of 75% (4X) cost reduction in the epitaxy phase of HB-LEDmanufacture.


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Dielectric Printed Circuit Board


Advanced Cooling Technologies, Inc.


Richard William Bonner

Subcontractor

UCLA

Funding Source

Small Business Innovation Research

Award

DOE Share: $100,000Contract Period

8/1/2010 1/31/2011

Technology


Project Summary

While solid state lighting (SSL) represents the future in energy efficient andenvironmentally friendly lighting, certain technological obstacles still must be addressedbefore SSL can truly compete with incandescent and fluorescent lamps. The thermalmanagement of high brightness (HB) light emitting diodes (LEDs) is one of these criticalobstacles, as identified by the DOE. The proposed core technology will dramaticallyimprove on current thermal management strategies implementing an innovative printedcircuit board (PCB) heat spreader.

Advanced Cooling Technologies, Inc. (ACT) proposes a PCB dielectric planarthermosyphon to maintain a significantly lower LED junction temperature, which notonly improves device reliability and lifetime but also enables higher luminous flux LEDsand higher density packing configurations. Phase I and II efforts will be directed towardsthe development and testing of a prototype integrated with an LED package.

ACT has partnered with Sunovia Energy Technologies, Inc., an LED integrator, to ensurethe proposed technology would be commercially applicable if a Phase III award wasultimately awarded. Specifically, ACT envisions the technology used in downlightingapplications where the gravity aided orientation enables the thermosyphon effect.


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Incorporated Smart and Efficient Driver for

BigChip Photonic Lattice LEDsInvestigating Organization

Luminus Devices


Michael Lim

Subcontractor

None

Funding Source


AwardDOE Share: $100,000

Contract Period

8/1/2010 - 1/31/2011

Technology


Project Summary

A large impediment to the rapid adoption of solid-state lighting is the high-cost of theluminaire systems. The packaged LED accounts for about 40% of this cost, while theelectronic driver accounts for an additional 20%. Luminus' big-chip approach reduces theluminaire system-level cost by integrating the emitting area of many small LEDs into asingle monolithic packaged LED emitter. Designing drivers for such an LED is anengineering challenge. Therefore companies must expend internal resources to developdriver solutions for this innovative LED. The problem is that small companies, withoutlarge development budgets, are disadvantaged by the lack of an openly available driversolution for the big-chip photonic lattice LED.

Luminus proposes development of a compact, highly-efficient, smart-grid/smart-metering

compatible driver for big-chip LEDs. This driver must be low-cost and versatile enoughto fit into many different lighting applications. Making this solution available to thebroader market will accelerate the adoption of solid-state lighting by enabling small-businesses to exploit the advantages of the big-chip LED approach.

In conjunction with big-chip LEDs, the drivers developed in this program will bedeployed throughout the lighting infrastructure. Because two-way communications willbe integrated into the driver it will be compatible with the developing smartgrid/ smart-


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metering infrastructure. The drivers open communications interface will enable smallbusinesses to innovate functionality into smart lighting. The benefits of deployinginnovative smartlighting will both lower the energy requirement and increase the qualityof solid-state lighting.


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OffGrid SolidState Agricultural LightingInvestigating Organization

Orbital Technologies Corporation


Dr. Robert Morrow

Subcontractor

None

Funding Source


Award

DOE Share: $99,999Contract Period

6/19/2010 - 3/18/2011

Technology


Project Summary

This project addresses the potential to move power requirements for ornamental crop

lighting systems off the grid and to alternative energy sources such as solar photovoltaic.Photoperiod lighting is currently used in an estimated 25% of greenhouse ornamentalproduction operations and floriculture operations in the field to control flowering andimprove product quality. Results from the project could help increase the penetration ofsolid-state lighting into a new niche market and ultimately provide a means to expand avaluable commercial market without increasing demands on the existing power grid.

The overall project objective is to characterize the variables, operating parameters, andconstraints associated with the implementation of off-grid solid-state agricultural lightingsystems, identify technical and economic barriers, and develop and test componenttechnologies and operating protocols to eliminate those barriers.

Photoperiod control lighting systems are used in high value ornamental crop productionto control flowering timing and plant quality. Many growing operations still useinefficient incandescent bulbs for this application. The use of solid state lighting systemswould significantly reduce power requirements. Combining the solid state lightingsystem with photovoltaic panels and batteries would enable the power used in theseoperations to be completely removed from the grid demand, and could in fact end as a netproducer of power. Benefits to the commercial producer would include reduced energy


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costs, elimination of expendables (glass light bulbs), more precise control of plant timingand quality, and less light pollution. Other benefits include allowing expansion of theseoperations into areas not sufficiently serviced by available power generation facilities ortransmission infrastructure. In a more general sense, it will be another step toward theintegration of energy efficient solid-state lighting and solar power into the general

economy.


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Investigation of LongTerm OLED Device Stability viaTransmission Electron Microscopy Imaging of

CrossSectioned OLED DevicesInvestigating Organization

Lawrence Berkeley National Laboratory


Gao Liu

Subcontractor

None

Funding Source


Award

DOE Share: $825,000

Contract Period

8/1/2007 - 6/15/2011

Technology


Project Summary

The objective is to improve OLED lifetime and functionality by combining novelfabrication and state of the art characterization techniques to understand the origins ofdevice degradation in white light OLEDs. The research focuses on the interfacialevolution at different stages of device lifetime to provide a comprehensive understandingof the interface degradation and resulting device characteristics to design more stableinterface structure for improved OLED lifetime.


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Charge Balance in Blue Electrophosphorescent Devices




Asanga B. Padmaperuma

Subcontractor

None

Funding Source


Award

DOE Share: $1,782,638Contract Period

4/1/2008 - 10/22/2011

Technology


Project Summary

The objective of this project is to develop new ambipolar phosphine oxide host materialsto improve charge balance in blue phosphorescent OLEDs, a necessary component ofefficient white OLEDs. Developing compatible host and blocking materials for bluephosphorescent dopants is challenging because triplet exciton energies higher than thedopant are required for all materials while reasonable charge transport rates must bemaintained to ensure injection of charge into the emissive layer. In conjunction with theirphosphine oxide electron transporting / hole blocking materials, new phosphine oxidehost materials incorporating hole transporting capability will provide appropriate energylevel alignments to optimize the injection and transport of both electrons and holes intothe emission layer. This will be accomplished while still maintaining the high tripletexciton energy necessary to achieve efficient energy transfer to the phosphorescentdopant. Achieving charge balance in the recombination region of the OLED willmaximize the luminescence efficiency, as well as improve device stability by preventingcharge accumulation at the interfaces.


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High Triplet Energy Transporting Materials and

Increased Extraction Efficiency for OLED Lighting




Franky So

Subcontractor

Lehigh University

Funding Source


AwardDOE Share: $780,000Contractor Share: $195,000

Contract Period

8/29/2009 - 12/31/2012

Technology


Project Summary

The objective of this research is to enhance the OLED efficiency at high brightness andthe light extraction efficiency lead to a final white emitting device with luminousefficiency of 150 lm/W and 75% EQE. To substantially increase the OLED deviceefficiency, the strategy is to fabricate OLED devices using high triplet energy electronand hole transporting materials. The final device is expected to reach an EQE of 25%. Toachieve high extraction efficiency, the strategy is to extract both the thin-film guidedmodes and the substrate modes. Internal light scattering layer incorporated in an OLEDwill be used to extract the thin-film guided modes and microlens arrays will be used toextract the substrate modes.


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TopEmitting White OLEDs withUltrahigh Light Extraction Efficiency




Jiangeng Xue

Subcontractor

None

Funding Source


AwardDOE Share: $840,000Contractor Share: $210,000

Contract Period

8/5/2009 - 12/31/2012

Technology


Project Summary

The objective of the proposed project is to demonstrate an ultra-effective (80%) lightextraction mechanism that can be universally applied to all top-emitting white OLEDs(TE-WOLEDs) and can be integrated with thin film encapsulation techniques. Theapproach is to fabricate an array of transparent microlenses with high refractive index andlarge contact angles on the light emitting surface of a TE-WOLED using inkjet printingof a liquid acrylate monomer followed by photopolymerization. The work proposed inthis project will include four major areas: (1) optical modeling; (2) microlens and arrayfabrication; (3) fabrication, encapsulation, and characterization of top-emitting OLEDs;and (4) full device integration and characterization.


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Solution Processable Transparent Conductive

Hole Injection Electrode for OLED SSL


Cambrios Technologies Corporation


Florian Pschenitzka

Subcontractor

Plextronics, Inc.

Funding Source


Award


Contract Period

4/16/2010 - 4/15/2012

Technology


Project Summary

The objective of this project shall be to develop a solution processable transparentconducting hole injection electrode (TCHI) to replace the combination of sputtered ITOelectrode and hole injection layer (HIL). The TCHI electrode shall consist of two-material system: a random connected network of silver nanowires embedded in andplanarized by a tailored HIL layer. This approach shall allow decoupling and independentoptimization of the transmission/conductivity of the electrode and its work function.


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Development of Stable Materials for

HighEfficiency Blue OLEDs through Rational DesignInvestigating Organization



Asanga B. Padmaperuma

Subcontractor

None

Funding Source


Award

DOE Share: $1,020,000

Contract Period

12/1/2009 - 11/30/2012

Technology


Project Summary

The objective of the project is to engineer an OLED system based on a combination ofnovel and existing hosts and hole transport materials that has high device efficiency andimproved operational stability. One goal of the project is to design and develop materialsthat have appropriate energy levels and hole transport properties as well as improvedmolecular level stability. The other goal of the project is to design device structures thatprevent the accumulation of charges at the interfaces, thereby improving the efficiencyand lifetime of the device.


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Development and Utilization of Host Materials for

White Phosphorescent Organic Lightemitting DiodesInvestigating Organization

University of Rochester


Lewis Rothberg

Subcontractor

None

Funding Source


Award


Contract Period

4/1/2010 - 3/31/2013

Technology


Project Summary

The overall objective is to increase the stability and efficiency of white OLEDs based onphosphorescent materials (PhOLEDs) for solid-state lighting. Phase I of the project shallimplement a new phosphorescent host materials strategy based on covalently coupledelectron and hole transport moieties and show that blue PhOLED operating lifetime canbe dramatically improved while maintaining high efficiency. Phase II shall incorporatethe best materials for the blue PhOLEDs into several architectures that have beendemonstrated to produce promising white PhOLEDs and benchmark operating stabilityand efficiency against the DOE MYPP goals.


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High Quantum Efficiency OLED Lighting Systems


General Electric Global Research


Dr. Joseph Shiang

Subcontractor

M.I.T.Stanford University

Funding Source


AwardDOE Share: $2,697,422Contractor Share: $1,200,586

Contract Period

10/1/2007 - 6/30/2011

Technology


Project Summary

GE, Stanford, and MIT will team together to overcome the limitations in currenttechnology by delivering to DOE a >75LPW illumination quality white light device(2800-6500 CCT, >85 CRI, >7000 hour life) that has a luminous output comparable to a60W incandescent lamp (900 lumens). The proposed lighting systems feature optimizedmultiple color, high IQE OLEDs that are arranged on a common substrate. A synergisticcombination of the light management film and OLED structure will form the basis of theLight Extraction Architexture (LEA). The OLED elements will be optimized usingelectrode texturing and extra-fluorescence to amplify the effect of the LEA. The OLEDwill be powered by a simple power supply that can be operated from standard linevoltages and will require minimum additional luminaire structures, thus minimizingdriver and luminaire losses. When all technologies in this program are fully developed,the expected EQE entitlement will exceed 75%. As a result, a key roadblock to OLEDtechnology development and commercialization for the lighting market will be removed.


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Application of Developed APCVD Transparent Conducting

Oxides and Undercoat Technologies for

Economical OLED Lighting


Arkema, Inc.


Gary Stephen Silverman

Subcontractor

Philips Lighting

Funding Source


Award


Contract Period

9/3/2008 - 2/2/2011

Technology


Project Summary

The project focused on using a suitable alternative for tin doped indium oxide (ITO) as atransparent conducting oxide (TCO) on glass substrates. Doped ZnO, has been developedby Arkema and its partners for application in the fenestration (window) market.Subsequently, this project was focused on using technology from the fenestrationindustry and applying it to the OLED lighting market. This represents a necessaryeconomical step for OLED lighting by shifting the Substrate cost from expensive ITOFlat Panel Display glass to doped ZnO on residential window glass. The Arkema andPhilips Lighting team has determined that doped ZnO is a viable, economicalreplacement for ITO as the anode in OLED lighting devices and is ready to move into the

next phase of commercial development.


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SolutionProcessed SmallMolecule OLED Lum

2011 ssl projectportfolio

Documents