22 nano meter technology

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VELAGAPUDI RAMAKRISHNA SIDDHARTHA ENGINEERING COLLEGE A PRESENTATION ON 22 NANO METER TECHNOLOGY PRESENTED BY G.LALITHA

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  • 1. VELAGAPUDI RAMAKRISHNA SIDDHARTHA ENGINEERING COLLEGE A PRESENTATION ON 22 NANO METER TECHNOLOGY PRESENTED BY G.LALITHA
  • 2. INTRODUCTION The 22 nanometer (22 nm) is the next CMOS process step following the 32 nm step on the International Technology Roadmap for Semiconductors (ITRS). It was first introduced by semiconductor companies in 2008 for use in memory products. transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, the 22-nanometer (nm) node in an Intel chip codenamed "ivybridge."
  • 3. INTEL TECHNOLOGY ROADMAP Process name P1266 P1268 P1270 P1272 P1274 Lithography 45nm 32nm 22nm 14nm 10nm 1st Production 2007 2009 2011 2013 2015
  • 4. MOORE'S LAW Moore's Law is a forecast for the pace of silicon technology development that states that roughly every 2 years transistor density will double, while increasing functionality and performance and decreasing costs. Transistors continue to get smaller, cheaper and more energy efficient in accordance with Moore's Law - named for Intel co-founder Gordon Moore. Because of this, Intel has been able to innovate and integrate, adding more features and computing cores to each chip, increasing performance, and decreasing manufacturing cost per transistor.
  • 5. TRANSISTOR INNOVATION ENABLE TECHNOLOGY
  • 6. 22NM 3-D TRI-GATE TRANSISTORS while meeting the overall power, cost and size requirements for a range of market segment needs. Replacing the "2D" gates with super-thin fins that rise up from the silicon base. Ivy Bridge-based Intel Core family processors will be the first high-volume chips to use 3-D Tri-Gate transistors. The performance, functionality and software compatibility of Intel architecture while meeting the overall power, cost and size requirements for a range of market segment needs.
  • 7. PLANAR VERSUS "3D TRI-GATE" TRANSISTOR DESIGN
  • 8. MULTIPLE FINS CAN BE ADDED TO PRODUCE OVERALL HIGHER PERFORMANCE
  • 9. 22 NM TRI-GATE TRANSISTOR
  • 10. TRI-GATE TRANSISTOR BENEFITS
  • 11. A COMPARISON BETWEEN INTEL 32NM AND 22NM TECHNOLOGY
  • 12. INTEL CONTINUES TO LEAD, USERS CONTINUE TO BENEFIT Introduced at the end of 2011, the 3rd generation Intel core processor is the first high-volume chip to use 3-D transistors. As Intel continues its product leadership for servers, pcs, laptops, and handheld devices with 22nm 3-D transistor technology, consumers and businesses should expect faster computing and graphics, and longer battery life in a variety of sleek form factors.
  • 13. REFERENCES * http://www.intel.com/technology * http://www.google.co.in * http://www.electroiq.com * http://www.techpowerup.com * http://www.chipwork.com/technology * http://www.techterm.com