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2N4033

GENERAL PURPOSE AMPLIFIER AND SWITCH

DESCRIPTIONThe 2N4033 is a silicon planar epitaxial PNPtransistors in Jedec TO-39 metal case primaryintended for large signal, low noise industrialapplications.

INTERNAL SCHEMATIC DIAGRAM

November 1997

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value UnitVCBO Collector-Base Voltage (I E = 0) -80 VVCEO Collector-Emitt er Voltage (I B = 0) -80 VVEBO Emitter-Base Voltage (I C = 0) -5 V

IC Collector Current -1 A

P t ot Total Dissipation at T amb 45 oCat T case 45 oC

0.84

WW

Tst g Storage Temperature -55 to 200 oCT j Max. Operating Junction Temperature 200 oC

TO-39

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THERMAL DATA

R thj-caseR thj-amb

Thermal Resistance Junction-Case MaxThermal Resistance Junction-Ambient Max

44218

o C/Wo C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICBO Collector Cut-offCurrent (I E = 0)

VCE = -60 VVCE = -60 V Tamb = 150 oC

-50-50

nAA

V(BR)CBO Collector-BaseBreakdown Voltage(IE = 0)

IC = -10 A -80 V

V(BR)CEO Collector-EmitterBreakdown Voltage(IB = 0)

IC = -10 mA -80 V

V(BR)EBO Emitter-BaseBreakdown Voltage(IC = 0)

IE = -10 A -5 V

VCE(sat) Collector-EmitterSaturation Voltage

IC = -150 mA IB = -15 mAIC = -500 mA IB = -50 mA

-0.15-0.5

VV

VBE(sat) Base-EmitterSaturation Voltage

IC = -150 mA IB = -15 mAIC = -500 mA IB = -50 mA

-0.9-1.1

VV

hFE DC Current Gain I C = -100 A VCE = -5 VIC = -1 00 m A V CE = -5 VIC = -5 00 m A V CE = -5 VIC = -1 A VCE = -5 VIC = -1 00 m A V CE = -5 VTam b = -55 oC

751007025

40

300

fT Transi t ion Frequency I C = -5 0 m A VCE = -10 Vf = 100 MHz

150 500 MHz

C EBO Emitter BaseCapacitance

IE = 0 VEB = -0.5 V f = 1MHz 110 pF

C CBO Collector BaseCapacitance

IE = 0 VCB = -10 V f = 1MHz 20 pF

ts Storage Time I C = -500 mA V CE = -30 VIB1 = -IB2 = -50 mA

350 ns

tf Fall Time I C = -500 mA V CE = -30 VIB1 = -IB2 = -50 mA

50 ns

ton Turn-on Time I C = -500 mA V CE = -30 VIB1 = -IB2 = -50 mA

100 ns

Pulsed: Pulse duration = 300 s, duty cycle

1 %See Test Circuit

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Collector-emitter SaturationVoltage. Base-emitter Saturation Voltage.

Transition Frequency. Collector-base Capacitance.

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Test Circuit for t on , ts , tf.

PULSE GENERATOR :tr, tf < 20 nsPW = 1.0 sZIN = 50 DC < 2 %

TO OSCILLOSCOPE :tr 10 nsZIN > 100 K

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DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

L 45o (typ.)

L

G

I

D A

F E

B

H

P008B

TO-39 MECHANICAL DATA

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Information furnished is believed to be accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsability for theconsequencesof use of such information nor for any infringement of patentsor other rights of third parties whichmay resultsfrom its use. Nolicense is grantedby implicationor otherwise underany patent or patent rights ofSGS-THOMSON Microelectronics. Specifications mentionedin this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics productsare not authorized for use as criticalcomponents in life supportdevices or systems withoutexpresswritten approval of SGS-THOMSON Microelectonics.

1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia- Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S.A. . .

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