2n6284-d

8/8/2019 2N6284-D

1/7

Semiconductor Components Industries, LLC, 2008

September, 2008

Rev. 4

1 Publication Order Number:

2N6284/D

2N6284 (NPN); 2N6286,2N6287 (PNP)

Preferred Device

Darlington ComplementarySilicon Power Transistors

These packages are designed for generalpurpose amplifier and

lowfrequency switching applications.

Features

High DC Current Gain @ IC = 10 Adc

hFE = 2400 (Typ) 2N6284

= 4000 (Typ) 2N6287

CollectorEmitter Sustaining Voltage

VCEO(sus)= 100 Vdc (Min)

Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors

PbFree Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

CollectorEmitter Voltage2N62862N6284/87

VCEO80100

Vdc

CollectorBase Voltage2N62862N6284/87

VCB80100

Vdc

EmitterBase Voltage VEB 5.0 Vdc

Collector Current ContinuousPeak

IC 2040

Adc

Base Current IB 0.5 Adc

Total Power Dissipation @ TC = 25CDerate above 25C

PD 1600.915

WW/C

Operating and Storage TemperatureRange

TJ, Tstg 65 to +200 C

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase RqJC 1.09 C/W

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. Indicates JEDEC Registered Data.

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

http://onsemi.com

20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

100 VOLTS, 160 WATTS

TO204AA (TO3)

CASE 107

STYLE 1

MARKING DIAGRAM

2N628x = Device Codex = 4, 6 or 7

G = PbFree PackageA = Location CodeYY = YearWW = Work WeekMEX = Country of Orgin

2N628xGAYYWW

MEX

Device Package Shipping

ORDERING INFORMATION

2N6284 TO3 100 Units/Tray

2N6284G TO3(PbFree)

100 Units/Tray


2N6286G TO3(PbFree)

100 Units/Tray


2N6287G TO3(PbFree)

100 Units/Tray

COLLECTOR

CASE

BASE1

EMITTER 2

21

8/8/2019 2N6284-D

2/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

2

25 50 100 125 200

Figure 1. Power DeratingTC, CASE TEMPERATURE (C)

PD,

POWE

RDISSIPATION(WATTS)

160

60

40

140

0 75 1500

20

80

100

120

175

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector

Emitter Sustaining Voltage(IC = 0.1 Adc, IB = 0) 2N62862N6284, 2N6287

VCEO(sus)

80100

Vdc

Collector Cutoff Current(VCE = 40 Vdc, IB = 0)(VCE = 50 Vdc, IB = 0)

ICEO

1.01.0

mAdc

Collector Cutoff Current(VCE = Rated VCB, VBE(off) = 1.5 Vdc)(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

0.55.0

mAdc

Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

IEBO

2.0

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)(IC = 20 Adc, VCE = 3.0 Vdc)

hFE

750100

18,000

CollectorEmitter Saturation Voltage(IC = 10 Adc, IB = 40 mAdc)(IC = 20 Adc, IB = 200 mAdc)

VCE(sat)

2.03.0

Vdc

BaseEmitter On Voltage(IC = 10 Adc, VCE = 3.0 Vdc)

VBE(on)

2.8

Vdc

BaseEmitter Saturation Voltage(IC = 20 Adc, IB = 200 mAdc)

VBE(sat)

4.0

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter SmallSignal ShortCircuitForward Current Transfer Ratio

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

|hfe|

4.0

MHz

Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6284

2N6286, 2N6287

Cob

400600

pF

SmallSignal Current Gain(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

300

2. Indicates JEDEC Registered Data.3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

8/8/2019 2N6284-D

3/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

3

Figure 2. Switching Times Test Circuit

10

0.2

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t,TIME(s)

7.0

2.0

1.0

0.7

0.5

0.10.3 0.7 3.0 20

0.2

1.0 5.0

0.3

3.0

5.0

0.5 2.0 7.0

0

VCC- 30 V

SCOPETUT

+ 4.0 V

tr, tfv 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPE e.g.,

1N5825 USED ABOVE IB[ 100 mA

MSD6100 USED BELOW IB[ 100 mA

25 ms

D151

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+ 8.0 V

V1

APPROX

- 12 V

[ 8.0 k [ 50

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

RB

10

td @ VBE(off) = 0 V

tf

ts

tr

2N6284 (NPN)

2N6287 (PNP)

VCC = 30 Vdc

IC/IB = 250

IB1 = IB2TJ = 25C

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.010.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t),EFFECTIVETRANSIENT

THERMALRESISTANCE(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RqJC(t) = r(t) RqJCRqJC = 1.09C/W MAX

D CURVES APPLY FOR POWERPULSE TRAIN SHOWN

READ TIME AT t1TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.3 3.0 30 300

8/8/2019 2N6284-D

4/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

4

ACTIVEREGION SAFE OPERATING AREA

50

Figure 5. 2N6284, 2N6287

20

2.0

0.0550 100

0.2

5.0

0.5

IC,

COLLECTORCURRENT(AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

1.0

0.1

2.0 5.0 2010

0.1 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25C

SINGLE PULSE

TJ = 200C

dc5.0 ms

1.0 ms

0.5 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliable

operation; i.e. the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_

C; TC isvariable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk) < 200_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

1.0

Figure 6. SmallSignal Current Gain

f, FREQUENCY (kHz)

102.0 5.0 10 20 50 100 200 1000

500

100

5000

hFE,

SMALL-

SIGNALCURRENTGAIN

20

200

500

2000

1000

50

TJ = 25C

VCE = 3.0 Vdc

IC = 10 A

1000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1001.0 2.0 5.0 20 10010

C,CA

PACITANCE(PF)

500

300

200

Cib

Cob

500.2 0.5

2N6284 (NPN)

2N6287 (PNP)

TJ = 25C700

2N6284 (NPN)

2N6287 (PNP)

8/8/2019 2N6284-D

5/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

5

Figure 8. DC Current Gain


0.2 0.3 0.5 0.7 1.0 2.0 20

500

300

hFE,

DCCURRE

NTGAIN TJ = 150C

25C

-55C

VCE = 3.0 V

2007.0

NPN

2N6284

PNP

2N6287

20,000

5000

10,000

30002000

1000

3.0 5.0


700

500

hFE,

DCCURRE

NTGAIN

TJ = 150C

25C

-55C

300

30,000

10,000

20,000

5000

3000

1000

7000

700

10

VCE = 3.0 V

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

7000

2000

Figure 9. Collector Saturation Region

VCE,

COLLECTORE

MITTERVOLTAGE(VOLTS) 3.0

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

1.0

VCE,

COLLECTORE

MITTERVOLTAGE(VOLTS) 3.0

IB, BASE CURRENT (mA)

0.5 1.0 2.0 3.0 5.0 7.0 50

2.6

2.2

1.8

1.4

IC = 5.0 A 10 A 15 A

1.0 0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020

IC = 5.0 A 10 A15 A

10 10

TJ = 25CTJ = 25C


VBE(sat) @ IC/IB = 250V

,VO

LTAGE(VOLTS)

Figure 10. On Voltages


V,

VO

LTAGE(VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25C

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25C

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.510 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

VBE @ VCE = 3.0 V

8/8/2019 2N6284-D

6/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

6

+5.0

Figure 11. Temperature Coefficients


0.2 0.3 1.0 2.0 3.0 5.0 7.0 20

V,

TEMPERATURECOEF

FICIENTS(mV/C)

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

qVB for VBE

*qVC for VCE(sat)

-55C to + 25C

25C to 150C

25C to + 150C

0.5 0.7

+5.0


V,

TEMPERATURECOEF

FICIENTS(mV/C)

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

qVB for VBE

*qVC for VCE(sat)

NPN

2N6284

PNP

2N6287

*APPLIES FOR IC/IBhFE@VCE+ 3.0V

250

-55C to + 25C

*APPLIES FOR IC/IBhFE@VCE+ 3.0V

250

-55C to + 25C

25C to 150C

25C to + 150C

-55C to + 25C

10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10

+2.0 +2.0

REVERSE FORWARD

105

Figure 12. Collector CutOff Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100,

COLLECTORCURRENT(A)

IC

10-1

-0.2 -0.40+0.2+0.4+0.6

VCE = 30 V

TJ = 150C

100C

25C

REVERSE FORWARD

103

104

-0.6 -0.8 -1.0 -1.2 -1.4

103

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

10-1

10-2,

COLLECTORCURRENT(A)

IC

10-3

101

102

+0.2 + 0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

VCE = 30 V

TJ = 150C

100C

25C

Figure 13. Darlington Schematic

NPN

2N6284PNP

2N6287

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 60

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 60

8/8/2019 2N6284-D

7/7

2N6284 (NPN); 2N6286, 2N6287 (PNP)

http://onsemi.com

7

PACKAGE DIMENSIONS

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF

B --- 1.050 --- 26.67C 0.250 0.335 6.35 8.51D 0.038 0.043 0.97 1.09E 0.055 0.070 1.40 1.77G 0.430 BSC 10.92 BSCH 0.215 BSC 5.46 BSCK 0.440 0.480 11.18 12.19L 0.665 BSC 16.89 BSCN --- 0.830 --- 21.08Q 0.151 0.165 3.84 4.19U 1.187 BSC 30.15 BSCV 0.131 0.188 3.33 4.77

A

N

E

C

K

T

SEATINGPLANE

2 PLD

MQM0.13 (0.005) Y MT

MYM0.13 (0.005) T

Q

Y

2

1

UL

G B

V

H

TO204 (TO3)CASE 107

ISSUE Z

STYLE 1:PIN 1. BASE

2. EMITTERCASE: COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Typical parameters which may be provided in SCILLC data sheets and/or specif ications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiar ies, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 8002829855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81357733850

2N6284/D

LITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone: 3036752175 or 8003443860 Toll Free USA/CanadaFax: 3036752176 or 8003443867Toll Free USA/CanadaEmail: [email protected]

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

2n6284-d

Documents