2sc3679.pdf

68

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC3679

900

800

7

5(Pulse10)

2.5

100(Tc=25C)

150

55 to +150

Unit

V

V

V

A

A

W

C

C

n Absolute maximum ratings n Electrical CharacteristicsSymbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC3679

100max

100max

800min

10to30

0.5max

1.2max

6typ

75typ

Unit

m A

m A

V

V

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=2A

IC=2A, IB=0.4A

IC=2A, IB=0.4A

VCE=12V, IE=0.5A

VCB=10V, f=1MHz

2SC3679(Ta=25C) (Ta=25C)

ICVCE Characteristics (Typical)

hFEIC Characteristics (Typical) tontstgt fIC Characteristics (Typical) j -at Characteristics

ICVBE Temperature Characteristics (Typical)VCE(sat) ,VBE(sat)IC Temperature Characteristics (Typical)

PcTa DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)

00

2

1

3

4

5

21 3 4Col lector-Emit ter Vol tage VCE(V)

Col

lect

or C

urre

nt I

C(A

)

500mA

400mA

300mA

200mA

700mA 600mA

IB=100mA

0.03 0.10.05 1 5 100.50

2

1

Col

lect

or-E

mitt

er S

atur

atio

n V

olta

ge V

CE

(sat

)(V)

Bas

e-E

mitt

er S

atur

atio

n V

olta

ge V

BE

(sat

)(V)

( IC/ IB=5)

Col lector Current IC(A)

VBE(sat)

125C (Case Temp)25C (Case Temp)55C (Case Temp)

25C

55

C

VCE(sat) 125C (Case

Tem

p)

0 .1 10.5 50.2

0.5

5

10

1

Sw

itchi

ng T

ime

ton

tstg

tf(

s)


tstg

ton

t f

VCC 250VIC: IB1:IB2 =2:0.3:1Const.

0.1

1

2

0.5

1 10 100 1000

Time t(ms)

Tran

sien

t The

rmal

Res

ista

nce

j-a

(C/W

)

100

50

3.500 25 50 75 100 125 150

Ambient Temperature Ta(C)

Max

imum

Pow

er D

issi

patio

n P

C(W

)

Wi th Inf in i te heatsink

Without Heatsink

100 50050 1000

1

0.5

0.1

0.05

0.01

10

20

5

Col lector-Emit ter Vol tage VCE(V)

Col

lect

or C

urre

nt I

C(A

)

Without HeatsinkNatural Cooling L=3mHIB2=1.0ADuty:less than1%

10 505 100 500 1000

0.05

0.01

1

0.5

0.1

10

20

5

Col lector-Emit ter Vol tage VCE(V)

Col

lect

or C

urre

nt I

C(A

)

Wi thout HeatsinkNatural Cool ing

100s10ms

1ms100ms

10s

DC (Tc=25 C )0

5

1

2

3

4

0 1.20.4 0.6 0.8 1.00.2Base-Emit tor Vol tage VBE(V)

Col

lect

or C

urre

nt I

C(A

)

(VCE=4V)

125

C (C

ase T

emp)

25C

(Cas

e Tem

p)55

C (C

ase T

emp)

0 .02 0.10.05 1 50.55

10

50


DC

Cur

rent

Gai

n hF

E

(VCE=4V)

125C25C

55C

n Typical Switching Characteristics (Common Emitter)VCC(V)

250

RL() 125

IC(A)

2

VBB2(V)

5

IB2(A)

1

ton(m s)

1max

tstg(m s)

5max

tf(m s)

1max

IB1(A)

0.3

VBB1(V)

10

External Dimensions MT-100(TO3P)15.60.4

9.6

19.9

0.

3

4.0

2.0

5.0

0.2

1.8

3.20.1

2

3

1.05+0.2-0.1

20.0

min

4.0m

ax

B E5.450.1 5.450.1

C

4.80.2

0.65+0.2-0.1

1.4

2.00.1

a

b

Weight : Approx 6.0ga. Type No.b. Lot No.

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