2sk3747

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2SK3747

No.7767-1/4

Features• Low ON-resistance, low input capacitance, ultrahigh-speed switching.• High reliability (Adoption of HVP process).• Attachment workability is good by Mica-less package.• Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS 1500 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID 2 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4 A

Allowable Power Dissipation PD3.0 W

Tc=25°C 50 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Avalanche Energy (Single Pulse) *1 EAS 42 mJ

Avalanche Current *2 IAV 2 A

*1 VDD=99V, L=20mH, IAV=2A

*2 L≤20mH, single pulse

Electrical Characteristics at Ta=25°C

RatingsParameter Symbol Conditions

min typ maxUnit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 1500 V

Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0 100 µA

Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V

Forward Transfer Admittance yfs VDS=20V, ID=1A 0.7 1.4 S

Static Drain-to-Source On-State ResistanceRDS(on) ID=1A, VGS=10V 10 13 Ω

Marking : K3747 Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7767

Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraft'scontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or containedherein.

81004QB TS IM TB-00000018

2SK3747N-Channel Silicon MOSFET

High-Voltage, High-Speed SwitchingApplications

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2SK3747

No.7767-2/4

Continued from preceding page.

RatingsParameter Symbol Conditions

min typ maxUnit

Input Capacitance Ciss VDS=20V, f=1MHz 400 pF

Output Capacitance Coss VDS=20V, f=1MHz 85 pF

Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 45 pF

Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns

Rise Time tr See specified Test Circuit. 30 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 152 ns

Fall Time tf See specified Test Circuit. 45 ns

Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC

Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=2A 2.7 nC

Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=2A 20 nC

Diode Forward Voltage VSD IS=2A, VGS=0 0.88 1.2 V

Note) Although the protection diode is contained between gate and source, be careful of handling enough.

Package Dimensions

unit : mm

2076B

Switching Time Test Circuit Unclamped Inductive Test Circuit

1 : Gate

2 : Drain

3 : Source

SANYO : TO-3PML

16.0

2.0

2.8

1.0

4 .

0

2 1 .

0

5 .

0

8 .

0

2 2 .

0

2 0 .

4

5.6

3.1

2.0

2 .

0

0.6

5.455.45

1 2 3

3 .

5

3.4

PW=10µsD.C.≤0.5%

P.G RGS=50Ω

G

S

D

ID=1A

RL=200Ω

VDD=200V

VOUT

2SK3747

VIN

10V

0V

VIN

50Ω

≥50Ω

DUT

VDD

L

10V

0V

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2SK3747

No.7767-3/4

Drain-to-Source Voltage, VDS -- V

D r a i n C u r r e n t , I D

- - A

Gate-to-Source Voltage, VGS -- V


- - A

S t a t i c D r a i n - t o - S o u r c e

O n - S t a t e R e s i s t a n c e , R D S ( o n ) - - Ω

S t a t i c D r a i n - t o - S o u r c e

O n - S t a t e R e s i s t a n c e , R D S ( o n ) - - Ω

Case Temperature, Tc -- °C

Drain Current, ID -- A

F o r w a r d T r a n s f e r A d m i t t a n c e ,

y f s

- - S

Diode Forward Voltage, VSD -- V

F o r w a r d D r a i n C u r r e n t , I F - - A

Drain Current, ID -- A

S w

i t c h i n g T i m e , S W T i m e - - n s

Gate-to-Source Voltage, VGS -- V

ID -- VDS ID -- VGS

RDS(on) -- VGS RDS(on) -- Tc

SW Time -- ID

IF -- VSDyfs -- ID


C i s s , C o s s , C r s s - - p F

Ciss, Coss, Crss -- VDS

IT07130 IT07131

IT07132 IT07133

--50 --25 0 25 50 75 100 125 150

00

4.0

3.5

3.0

2.5

2.0

1.5

50454010 305 2515 20 35

1.0

0.5

00

3.0

2.5

2.0

1.5

2018164 122 106 8 14

1.0

0.5

1 0 V

8 V

0

30

25

10

20

15

5

VGS=4V

5V

6V

IT07136

IT07135

0.2 0.4 0.6 0.8 1.21.0

0.01

0.1

1.0

10

7

5

3

2

7

5

3

2

75

3

2

IT07134

2 5 ° C

- - 2 5

° C

T c = 7 5

° C

0.13 5 7 2 3 5 7 2 31.0

1.0

2

3

5

7

2

3

5

0.1

VDS=20V

2 5 ° C

T c = -

- 2 5 ° C

7 5 ° C

VGS=0

ID=1A

VGS=10V

100

10

3

2

3

2

5

5

7

0.1 1.02 3 5 7 2 3

VDD=200V

VGS=10V

t d ( o f f )

t f

t r td(on)

0

7

100

10

1000

7

5

5

3

2

5

3

2

3

2

50305 15 20 25 35 40 4510

IT07137

f=1MHz

Ciss

C o ss

C r s s

Tc= --25°C

25°C

75°C

00

30

25

20

15

2018164 122 106 8 14

10

5

ID=1A

Tc=75°C

25°C

--25°C

Tc=25°Cpulse

VDS=20Vpulse

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2SK3747

No.7767-4/4PS

Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer’sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

This catalog provides information as of August, 2004. Specifications and information herein are subject

to change without notice.

Total Gate Charge, Qg -- nC

G a t e - t o - S o u r c e V

o l t a g e , V G S - - V



- - A

Ambient Temperature, Ta -- °C

A l l o w a b l e P o w e r D i s s i p a t i o n ,

P D

- - W

Case Temperature, Tc -- °C

A l l o w a b l e P o w e r D i s s i p a t i o n ,

P D

- - W

A S OVGS -- Qg

PD -- Ta PD -- TcIT07139IT07138

IT07140 IT07141

00

1

2

3

4

5

6

7

8

40

10

9

10 20 30

VDS=200V

ID=2A

1.0

2

3

5

7

2

3

5

7

2

3

5

7

0.1

0.012 3 5 72 3 5 72 3 5 71.0 10 100 1000 32

<10µs

Operation in this area

is limited by RDS(on).

1 0 µ s 1 0 0 µ s 1 m s 1 0 m

s 1 0 0 m

s

ID=2A

IDP=4A

D C o p e r a t i o n

Tc=25°CSingle pulse

00

20 40

0.5

1.0

60

2.0

1.5

80 100 120

3.0

2.5

3.5

140 160 00

20 40

20

10

60

40

30

80 100 120

50

60

140 160

2sk3747

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