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MOS FIELD EFFECT TRANSISTOR

2SK3918

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D17077EJ3V0DS00 (3rd edition)Date Published January 2005 NS CP(K)

Printed in Japan20

The mark shows major revised points.

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3918 TO-251 (MP-3)

2SK3918-ZK TO-252 (MP-3ZK)

DESCRIPTION

The 2SK3918 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

Low on-state resistance

RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A)

Low Ciss: Ciss = 1300 pF TYP.

5 V drive available

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V) VDSS 25 V

Gate to Source Voltage (VDS = 0 V) VGSS 20 V

Drain Current (DC) (TC = 25C) ID(DC) 48 A

Drain Current (pulse)Note1

ID(pulse) 192 A

Total Power Dissipation (TC = 25C) PT1 29 W

Total Power Dissipation PT2 1.0 W

Channel Temperature Tch 150 C

Storage Temperature Tstg 55 to +150 C

Single Avalanche CurrentNote2

IAS 22 A

Single Avalanche EnergyNote2

EAS 48 mJ

Notes 1. PW 10 s, Duty Cycle 1%

2. Starting Tch = 25C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V

(TO-251)

(TO-252)

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Data Sheet D17077EJ3V0DS2

2SK3918

ELECTRICAL CHARACTERISTICS (TA = 25C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 A

Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 100 nA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V

Forward Transfer AdmittanceNote

| yfs | VDS = 10 V, ID = 12 A 6 12 S

RDS(on)1 VGS = 10 V, ID = 24 A 5.9 7.5 mDrain to Source On-state ResistanceNote

RDS(on)2 VGS = 5.0 V, ID = 12 A 11 22.2 m

Input Capacitance Ciss 1300 pF

Output Capacitance Coss 310 pF

Reverse Transfer Capacitance Crss

VDS = 10 V

VGS = 0 V

f = 1 MHz220 pF

Turn-on Delay Time td(on) 13 ns

Rise Time tr 14 ns

Turn-off Delay Time td(off) 38 ns

Fall Time tf

VDD = 12.5 V, ID = 24 A

VGS = 10 V

RG = 10

14 ns

Total Gate Charge QG 28 nC

Gate to Source Charge QGS 5 nC

Gate to Drain Charge QGD

VDD = 20 V

VGS = 10 V

ID = 48 A10 nC

Body Diode Forward VoltageNote

VF(S-D) IF = 48 A, VGS = 0 V 0.98 V

Reverse Recovery Time trr IF = 48 A, VGS = 0 V 27 ns

Reverse Recovery Charge Qrr di/dt = 100 A/s 15 nC

Note Pulsed

TEST CIRCUIT 3 GATE CHARGE

VGS = 20 0 V

PG.

RG = 25

50

D.U.T.L

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

RL

VDD

TEST CIRCUIT 2 SWITCHING TIME

RG

PG.

IG = 2 mA

50

D.U.T.

RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

= 1 sDuty Cycle 1%

VGSWave Form

VDSWave Form

VGS

VDS

10%0

0

90%

90%

90%

VGS

VDS

ton toff

td(on) tr td(off) tf

10% 10%

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Data Sheet D17077EJ3V0DS 3

2SK3918

TYPICAL CHARACTERISTICS (TA = 25C)

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

dT-PercentageofRatedP

ower-%

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

TC - Case Temperature - C

PT-TotalPowerDissipation-W

0

5

10

15

20

25

30

35

0 25 50 75 100 125 150 175

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

ID-DrainCurrent-A

0.1

1

10

100

1000

0.1 1 10 100

PW = 100 s

1 ms

10 ms

Power Dissipation Limited

TC = 25C

Single pulse

ID(pulse)

RDS(on) Limited

(at VGS = 10 V)

ID(DC)

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t)-TransientThermal

Resistance-C/W

0.01

0.1

1

10

100

1000

Rth(ch-A) = 125C/W

Rth(ch-C) = 4.31C/W

Single pulse

PW - Pulse Width - s

100 1 m 10 m 100 m 1 10 100 1000

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Data Sheet D17077EJ3V0DS4

2SK3918

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

ID-DrainCurrent-A

0

50

100

150

200

0 1 2 3

VGS = 10 V

Pulsed

5.0 V


ID-DrainCurrent-A

0.01

0.1

1

10

100

1000

0 1 2 3 4 5 6

Tch = 55C

25C

75C125C

150C

VDS = 10 V

Pulsed

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

VGS(off)-GateCut-offVoltage-V

0

1

2

3

4

-100 -50 0 50 100 150 200

VDS = 10 V

ID = 1 mA

Tch - Channel Temperature - C

|yfs|-ForwardTransferAdmittance-S

0.1

1

10

100

0.1 1 10 100

VDS = 10 V

Pulsed

Tch = 55C

25C

75C

125C

150C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

RDS(on)-DraintoSourceOn-stateResistance-m

0

5

10

15

20

1 10 100 1000

10 V

Pulsed

VGS = 5.0 V



0

5

10

15

0 5 10 15 20

Pulsed

ID = 24 A

VGS - Gate to Source Voltage - V

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Data Sheet D17077EJ3V0DS 5

2SK3918

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE


0

5

10

15

-100 -50 0 50 100 150 200

ID = 24 A

Pulsed

VGS = 10 V

Tch - Channel Temperature - C

Ciss,Coss,Crss-Capacitance-pF

100

1000

10000

0.01 0.1 1 10 100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss


SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

td(on),tr,td(off),tf-SwitchingTime-ns

1

10

100

1000

0.1 1 10 100

tr

td(off)

td(on)

tf

VDD =12.5 V

VGS = 10 V

RG = 10


VDS-DraintoSourceVoltage-V

0

5

10

15

20

25

30

0 10 20 300

2

4

6

8

10

12

VDS

VDD = 20 V

12.5 V

5 V

ID = 48 A, 42 A (at VDD = 5 V)

VGS

QG - Gate Charge - nC

VGS-GatetoSourceVoltage-V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.DIODE FORWARD CURRENT

IF-DiodeForw

ardCurrent-A

0.01

0.1

1

10

100

1000

0 0.5 1 1.5

VGS = 10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

trr-ReverseRecoveryTime-ns

1

10

100

1000

1 10 100

di/dt = 100 A/s

VGS = 0 V

IF - Diode Forward Current - A

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2SK3918

The information in this document is current as of January, 2005. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC Electronics data

sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not

all products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

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M8E 02. 11-1

2sk3918

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