367 controlled morphology of electrodeposited cu scn by variation of applied bias voltage
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Controlled morphology of electrodeposited CuSCN by
variation of applied bias voltage
ICAER-2013
Presented by SOHAM GHOSH
Dept. Energy Science and Engineering
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Outline
• Sensitized solar cell (SSC),
• Motivation of the work,
• Applied bias dependent CuSCN morphology,
• Deposition time dependent CuSCN morphology,
• Application,
• Summary.
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Dye Sensitized Solar Cell
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Contains three individual layers
namely: the electron collector, absorber
layer or the dye and the electrolyte or
hole conducting material
e-h pairs separated due the presence
of band-offset at each interface
Easy fabrication; Less energy
consuming
Less pay-back period than Si based solar cell
Efficiency reached > 11% for lab based
devicesDSSC
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Semiconductor Sensitized Solar Cell
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•Dye is replaced by a low band-gap semiconductormaterial leading to an intermediate solid stateDSSC,•Electrolyte is also replaced by a solidsemiconductor making the whole device as a solidstate device.
CuSCN
FTO
ZnO
CdS
Au
ElectronHole
Degradation of dye with time (mainly the UV degradation)
Liquid electrolyte (improper packaging)
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Motivation of the work
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ZnO NanorodsSensitizerCuSCN
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Contd.
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FTO
CuSCN Nanorod
Electron Collector
Ag
Sensitizer
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Contd.
• The percolation of hole collecting material into the pores in nanoporous
substrates is quite limited,
• Inverse structural design using p-type semiconductor nanorods as
building blocks,
• Surface area will increase and interface charge recombination will
reduce resulting better charge transport,
• Hole conducting pathway that is likely to be diffusion limited in
comparison to the hoping and grain boundary dominated transport
mechanism.
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SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V, (C) -0.32 V, (D) -0.35 V, (E) -0.40 V (F) -0.42 V
Applied Bias Dependent CuSCN Morphology
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XRD Pattern of CuSCN
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10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
* *
***
***
(10
7)
(24
1)
(01
5)
(00
6)
(10
1)
Inte
nsi
ty (
a.u
.)
2 Theta (deg.)
-0.30V
-0.31V
-0.32V
-0.35V
-0.40V
-0.42V
(00
3)
(10
4)
*
* FTO Glass
(11
3)
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Deposition Time Dependent CuSCN Morphology
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SEM of time dependant deposition film for (A) 1hr (B) 2hr (C) 3hr
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TEM of CuSCN Nanorods
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Transmission electron microscopy of CuSCN nanorods
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Photovoltaic Application
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Jsc = 8.8 mA/cm2Voc = 0.68FF = 0.63η = 3.9%
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Summary
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• Well shaped nanorods can be deposited under a potential of -0.3V,
• With increasing the applied potential nanorods were started
agglomerated gradually,
• With increasing deposition time the nanorods diameter started to
increase,
• Application for Semiconductor Sensitized Solar Cell.
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Fabrication Methodology of Copper Thiocyanate
Experimental details:
• Electrolyte contains Cu+2 and SCN- ions in a water-ethanol system
Applied Potential: -0.3 to -0.42 V
Reaction at Cathode:
• Cu(ClO4)2 Cu2+ + 2ClO4-
• NaSCN Na+ + SCN-
• Cu+2 + SCN- CuSCN+
• CuSCN+ + e- CuSCN
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SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V
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SEM images of the CuSCN films deposited at (C) -0.32 V, (D) -0.35 V
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SEM images of the CuSCN films deposited at (A) -0.40 V, (B) -0.41 V