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4. MOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall 2012, F. Najmabadi Sedra & Smith Sec. 5.7 & 5.8 (S&S 5 th Ed: Sec. 4.7 & 4.9)

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Page 1: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

4. MOS Amplifier Biasing & Discrete MOS Amplifiers

ECE 102, Fall 2012, F. Najmabadi

Sedra & Smith Sec. 5.7 & 5.8

(S&S 5th Ed: Sec. 4.7 & 4.9)

Page 2: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

The major goal of “Bias” is to ensure that MOS is in saturation at all times

F. Najmabadi, ECE102, Fall 2012 (2/35)

Bias is the state of the system when there is no signal.

Bias point should be stable (i.e., resilient to variations in µnCox (W/L), Vt , … due to temperature and/or manufacturing variability.) o Important parameters are ID and VDS

In addition:

Bias point impacts the small-signal parameters.

Bias point impacts how large a signal can be amplified.

Bias point impact power consumption.

Page 3: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Bias with Gate Voltage

F. Najmabadi, ECE102, Fall 2012 (3/35)

This method is NOT desirable as µnCox (W/L) and Vt are not “well-defined.” Bias point (i.e., ID and VDS) can change drastically due to temperature and/or manufacturing variability. o See Exercise 5.33 (S&S 5th Ed: Exercise 4.19) Changing Vt from 1 to 1.5 V

leads to 75% change in ID.

DDDDDS

tGSoxnD

RIVV

VVL

WCI

−=

−= 2)( 5.0 µ

Page 4: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Bias with Source Degeneration (Resistor Rs provides negative feedback)

F. Najmabadi, ECE102, Fall 2012 (4/35)

Negative Feedback:

o If ID ↑ (because µnCox ↑ or Vtn ↓ ) VGS ↓ ID ↓

o If ID ↓ (because µnCox ↓ or Vtn ↑ ) VGS ↑ ID ↑

ID Eq. GS KVL

GS KVL ID Eq.

Feedback is most effective if

2)( 5.0 tGSoxnD

DSGGS

VVL

WCI

IRVV

−=

−=

µ

SGDDSGGS

GSDS

RVIIRVVVIR

/ 0 ≈⇒=+−>>

Page 5: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Examples of Bias with Source Degeneration

F. Najmabadi, ECE102, Fall 2012 (5/35)

Basic Arrangement

DSGGS IRVV −=

) 00 :(KVL SSDSGSG VIRVR −++×=

Bias with one power supply

DSGGS IRVV −= DSSSGS IRVV −=

Bias with two power supply

Page 6: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

F. Najmabadi, ECE102, Fall 2012 (6/35)

Example: Find Bias point for Vt = 1 V and µnCox (W/L) = 1.0 mA/V2 (Ignore channel-width modulation.

Voltage divider (IG = 0)

V 715)87/()7( =×+=GV

V 1 065

7)105.0(101

7 7 :KVL-GS

5.0

2

234

2

=→=−+

=××++

=++=+=

=

OVOVOV

OVOV

DStOV

DSGSG

OVoxnD

VVVVV

IRVVIRVV

VL

WCI µ

V 5 V 1015

15 :KVL-DS

=−==−=

+=

SDDS

DDD

DDD

VVVIRV

VIR

mA 5.0/ V 527

V 21

===−=−=

=+=

SSD

GSGS

OVGS

RVIVVV

VV

Impact of RS (prove it) if Vt = 1.5 V (50% change), ID = 0.455mA (9% change)

Page 7: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Biasing in ICs

F. Najmabadi, ECE102, Fall 2012 (7/35)

Resistors take too much space on the chip. So, source degeneration with RS is NOT implemented in ICs.

Recall that the goal of a good bias is to ensure ID and VDS would not change (e.g., due to temperature variation). One can force ID to be constant using a current source.

1) Current source forces: IID =

4) GSGSGS VVVV −=−=

3) VGS is set by 2)( 5.0 tGSoxnD VV

LWCI −= µ

2) DDDDD IRVV −=

5) SDDS VVV −=

Page 8: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Current Mirrors or Current Steering Circuits are used as current sources for biasing ICs

F. Najmabadi, ECE102, Fall 2012 (8/35)

Circuit works as long as Q1 is in

saturation:

Identical MOS: Same µCox and Vt

Qref is always in saturation since

OVOVrefOV

GSGSrefGS

trefGSrefGSrefDS

VVVVVV

VVVV

==

==

−>=

1 ,

1 ,

,,,

2

1 11

2

ref,

5.0

5.0

OVoxnD

OVoxnrefDref

VL

WCII

VL

WCII

==

==

µ

µ

( )( )refref LW

LWII

// 1 1 =

tGSOVDS VVVV −=>1

Page 9: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

An implementation of a Current Mirror

F. Najmabadi, ECE102, Fall 2012 (9/35)

Current mirror:

Since I1 = constant regardless of voltage, this is a current source!

Note: Circuit works as long as Q1 is in saturation.

The above 2 equations uniquely set Qref Bias point (ID,ref and VGS,ref = VDS,ref)

Identical MOS: Same µCox and Vt

2tGS, )V(V )/(5.0

:KVL-DS

−==

+=+

−+=

refoxnrefDref

SSDDGSref

SSGSrefDD

LWCII

VVVRIVVRIV

µ

( )( )refref LW

LWII

// 1 1 =

Page 10: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Examples of Current Steering circuits

F. Najmabadi, ECE102, Fall 2012 (10/35)

Current steering circuit can bias several transistors A PMOS current mirror

( )( )refref LW

LWII

// 1 1 =

( )( )refref LW

LWII

// 2 2 =

( )( )refref LW

LWII

// 1 1 =

Page 11: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

An implementation of current steering circuit to bias several transistors in an IC

F. Najmabadi, ECE102, Fall 2012 (11/35) Exercise: Compute I4/Iref

Page 12: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

F. Najmabadi, ECE102, Fall 2012 (12/35)

Discrete MOS Amplifiers

We will use MOS Fundamental Amplifier Configurations and Elementary R Forms to find the response of discrete MOS amplifiers

First, a few observations.

Page 13: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Stable Bias circuits for discrete MOS amplifiers

F. Najmabadi, ECE102, Fall 2012 (13/35)

We will do analysis for this configuration

Two power supplies

DSSSGS IRVV −=

Will Discuss later

Identical signal circuit for 21 || GGG RRR =

One power supply

DSGGS IRVV −=

Drain Feedback

Page 14: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Signal is typically coupled to discrete amplifiers via coupling capacitors

F. Najmabadi, ECE102, Fall 2012 (14/35)

Capacitors are open circuits for Bias (DC)

We assume that the signal is at sufficiently high frequencies, such that “large” capacitors can be approximated as shorts (|Z| = 1/ωC is small) o A lower cut-off frequency for amplifier

These capacitors can be added at input, output, and between amplifier stages.

These capacitor can also be used to “by-pass” resistors needed for bias but not for signal.

Note: In general, one should NOT assume

that all capacitors are short. We will see the impact of various capacitors later when we discuss frequency response of amplifiers.

Page 15: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

F. Najmabadi, ECE102, Fall 2012 (15/35)

Real Circuit Test book uses current source for biasing (not a practical discrete circuit)

The analysis method introduced here, however, apply to any discrete bias case.

Page 16: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

The best way to identify the type of amplifier is to follow the signal

F. Najmabadi, ECE102, Fall 2012 (16/35)

Common Source with RS

Common Drain/Source Follower

Common Source

Common Gate Input at the GATE

Output at the DRAIN Input at the SOURCE Output at the DRAIN

Input at the GATE Output at the DRAIN

Input at the GATE Output at the SOURCE

Page 17: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Analysis Steps

Note: We should solve the complete circuit (i.e., include vsig, Rsig , RL in our analysis).

Compute Bias point. o All capacitors are open circuits

o Compute gm and ro

Draw signal circuit (with MOS intact). o Low-frequency Caps are short, high-frequency Caps are open (high-

frequency caps discussed later)

Indentify fundamental amplifier configuration and compute proper amplifier gain (vo/vi) and the circuit gain (vo/vsig)

Use elementary R forms to find Ri and Ro o In general Ri will depend on RL and Ro depends on Rsig

F. Najmabadi, ECE102, Fall 2012 (17/35)

Page 18: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete Common-source Amplifier

F. Najmabadi, ECE102, Fall 2012 (18/35)

This is a common-source amplifier (input at the gate and output at the drain).

Bias calculations are NOT done here as we have done that before.

Note (this is true for ALL circuits) sigi

i

sig

i

RRR

vv

+=

Page 19: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Derivation of small-signal circuit for Discrete CS Amplifier

F. Najmabadi, ECE102, Fall 2012 (19/35)

Real Circuit

Rearrange

Short caps Zero bias supplies

Signal Circuit

Page 20: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier – Gain

F. Najmabadi, ECE102, Fall 2012 (20/35)

i

o

sigi

i

sig

o

LDomi

o

vv

RRR

vv

RRrgvv

×+

=

−=

)||||(

Fundamental CS form

LDL RRR ||=′

Signal input at the gate Signal output at the drain No RS

Page 21: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier – Ri

F. Najmabadi, ECE102, Fall 2012 (21/35)

Gi RR =

∞= R

R

Replace transistor with its equivalent resistance Looking into the gate

Elementary R Configuration

∞= R

Page 22: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier – Ro

F. Najmabadi, ECE102, Fall 2012 (22/35)

|| oDo rRR =

orR =

R

Set vsig = 0 Replace transistor with its equivalent resistance Since ig = 0, Rsig and RG can be removed (vg = 0) Looking into the drain

Elementary R Configuration

orR =

Page 23: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier with RS

F. Najmabadi, ECE102, Fall 2012 (23/35)

Real Circuit

Signal Circuit

Short caps Zero bias supplies

Page 24: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier with RS – Gain

F. Najmabadi, ECE102, Fall 2012 (24/35)

i

o

sigi

i

sig

o

oLDSm

LDm

i

o

vv

RRR

vv

rRRRgRRg

vv

×+

=

++−=

/)||( 1

)||(

Fundamental CS form with RS

LDL RRR ||=′

Signal input at the gate Signal output at the drain RS !

Page 25: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier with RS – Ri

F. Najmabadi, ECE102, Fall 2012 (25/35)

Gi RR =

∞= R

R

Replace transistor with its equivalent resistance Looking into the gate

Elementary R Configuration

∞= R

Page 26: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CS Amplifier with RS – Ro

F. Najmabadi, ECE102, Fall 2012 (26/35)

[ ] )1( || SSmoDo RRgrRR ++=

R

R

Set vsig = 0 Replace transistor with its equivalent resistance Since ig = 0, Rsig and RG can be removed (vg = 0) Looking into the drain

Elementary R Configuration

SSmo RRgrR ++= )1(

SR=

SSmo RRgrR ++= )1(

Page 27: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier

F. Najmabadi, ECE102, Fall 2012 (27/35)

Real Circuit

Signal Circuit

Short caps Zero bias supplies

Page 28: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Gain

F. Najmabadi, ECE102, Fall 2012 (28/35)

Fundamental CG form

LDL RRR ||=′

Signal input at the source Signal output at the drain

i

o

sigi

i

sig

o

LDomi

o

vv

RRR

vv

RRrgvv

×+

=

+=

)||||(

Page 29: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Ri

F. Najmabadi, ECE102, Fall 2012 (29/35)

om

LDo

rgRRrR

++

=1

)||(

1

)||( ||

+

+=

om

LDoSi rg

RRrRR

R

Replace transistor with its equivalent resistance Looking into the source

Elementary R Configuration

LD RR ||=

om

LDo

rgRRrR

++

=1

)||(

Page 30: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Ro

F. Najmabadi, ECE102, Fall 2012 (30/35)

{ }sigSsigSmoDo RRRRgrRR ||)]||(1[ || ++=

R

R

Set vsig = 0 Replace transistor with its equivalent resistance Looking into the drain

Elementary R Configuration

sigSsigSmo RRRRgrR ||)]||(1[ ++=

sigS RR ||=

sigSsigSmo RRRRgr ||)]||(1[ ++

Page 31: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CD Amplifier (Source Follower)

F. Najmabadi, ECE102, Fall 2012 (31/35)

Signal Circuit

Short caps Zero bias supplies

Real Circuit

Page 32: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Gain

F. Najmabadi, ECE102, Fall 2012 (32/35)

Fundamental CS form

Signal input at the gate Signal output at the source

i

o

sigi

i

sig

o

LSom

LSom

i

o

vv

RRR

vv

RRrgRRrg

vv

×+

=

+=

)||||(1

)||||(

LSL RRR ||=′

Page 33: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Ri

F. Najmabadi, ECE102, Fall 2012 (33/35)

Replace transistor with its equivalent resistance Looking into the gate

R

Elementary R Configuration

∞= R

Gi RR =

∞= R

Page 34: 4. MOS Amplifier Biasing & Discrete MOS Amplifiersaries.ucsd.edu/NAJMABADI/CLASS/ECE102/12-F/NOTES/ECE102_F12-LecSet-4.pdfMOS Amplifier Biasing & Discrete MOS Amplifiers ECE 102, Fall

Discrete CG Amplifier – Ro

F. Najmabadi, ECE102, Fall 2012 (34/35)

1 || m

So gRR =

R

Elementary R Configuration

Set vsig = 0 Replace transistor with its equivalent resistance Since ig = 0, Rsig and RG can be removed (vg = 0) Looking into the source

Rm

om g

rg

1||1≈