200mm LOW ENERGY/HIGH CURRENT SUMMARY SPECIFICATIONGSDIII/LED

Introduction

The Axcelis GSDIII/LED is a dependable and reliable low energy, high current ionimplanter designed for volume 200mm manufacturing. The GSDIII/LED delivers exceptional productivity with high wafer throughput and fast lot cycle time. The systemfeatures a new high-transmission beamline with boosted low energy beam currents in order to run advanced ultra-shallow junction processes in production. The new beamline incorporating proprietary electron confinement technology delivers low energybeam current to the wafer without adding moving parts or complex assemblies.

Additionally, the system runs As2 and P2 dimer for n-type doping, which further increaseseffective low energy beam current. The GSDIII/LED also employs the most productivearchitecture available for high-current applications and features fast beam setup, in situwafer repositioning and efficient beam utilization to maximize beam-on-wafer duty cycle.Quad implants help meet the tight parametric requirements for aggressive device scaling,and the Axcelis GSDIII/LED maintains its commanding lead in wafer throughput runningmulti-segment implants.

Real time dosimetry, low energy accuracy, cross-contamination reduction, and charge neutralization & monitoring — these features make the Axcelis GSDIII/LED the benchmark system for high current process control and enable advanced device processing down to the 70nm technology node.

Beam Currents

Beam current values are specified as measured at the disk faraday(Energy keV, Beam Currents mA)

Final Energy 11B+ 11B+ 49BF2+ 75As+ 150As2

+ 31P+ 62P2+

(Extraction Energy) (drift) (decel) (drift) (drift) (drift) (drift) (drift)0.2 (2.0) - 0.7 - - - - -0.5 (2.5) 0.4 1.5 - - - - -1.0 (4.0) 1.5 3.0 1.0 0.8 1.5 0.7 2.0

2.0 4.5 - 1.8 2.4 4.0 3.0 5.05.0 8.0 - 6.0 7.5 - 8.0 10.0

10.0 10.5 - 9.0 15.0 - 14.0 -20.0 12.0 - 10.0 20.0 - 20.0 -30.0 12.0 - 11.0 21.0 - 21.0 -40.0 12.0 - 11.0 22.0 - 22.0 -50.0 12.0 - 11.0 22.0 - 22.0 -70.0 11.0 - 11.0 21.0 - 21.0 -80.0 11.0 - 11.0 20.0 - 20.0 -

Note: • As2 and P2 values correspond to equivalent monomer current and effective energy.• Implementation of Germanium (Ge), Silicon (Si), Nitrogen (N), and Antimony (Sb) is also possible with this

system.

Minimum Beam Current

• 10µA

Dose Range

• 5.0E11-1.0E16 atoms/cm2

Species Resolution

• m/∆m > 20 for 11B+, all energies• m/∆m > 50 for 49BF2

+, when energy > 10keV• m/∆m > 40 for 49BF2

+, when energy ≤ 10keV• m/∆m > 40 for 31P+, all energies• m/∆m > 40 for 75As+, when energy > 10keV• m/∆m > 20 for 75As+, when energy ≤ 10keV• Maximum mass-energy product: 6000 AMU•keV

Mechanical Throughput

• 220 Wafers per hour mechanical limit with an implant time of 73 seconds• 166 Wafers per hour multi-segment (quad) implants – no off-pad repositioning or loading/unloading of wafers is

necessary. Maximum implant time of 96 seconds.Note: When system is integrated with SMIF, throughput at the mechanical limit can be maintained for 200mm systems providing the SMIF

hardware selected complies with Axcelis’ transfer protocol times (~35 seconds for cassette load or unload).

Endstation Geometry

• (α2 + β2)1/2 ≤ 10°, accurate to ± 0.5°• Tilt θ ≤ 7.7°, all twist angles (Polar coordinates)• Batch size: 13 wafers

Vacuum Performance

Subsystem Pump Type Base Pressure (Torr)Source Seiko A2203C (2000 I/s) ≤ 1.0 E-06Beamline/Resolving Housing CTI-10 On-Board/Fast Regen ≤ 8.0 E-07Process Chamber CTI-250F On-Board/Fast Regen ≤ 7.0 E-07Note: Base pressure levels with beam off after 12-hour pump down

Wafer Temperature Control

Maximum wafer temperature will not exceed 100°C, as measured by temperature stickers shielded from direct exposure to the beam, adhered to the front side of bare Silicon wafers for all doses up to 1.0E16 atoms/cm2 at maximum beam power.

Dose Control

Dose Uniformity Within a Wafer• ≤1.0% (1σ) of the mean for energies ≥1keV• ≤1.5% (1σ) of the mean for energies <1keV

Dose Repeatability/Wafer-to-Wafer and Batch-to-Batch• ≤1.0% (1σ) of the mean for energies ≥1keV• ≤1.5% (1σ) of the mean for energies <1keV

Note:• Repeatability measurements will be determined by calculating the standard deviation of wafer and batch averages.• For doses >5.0E13 atoms/cm2, sheet resistance measurements should be taken using a 4-point probe technique, and for doses ≤5.0E13

atoms/cm2, Therma-Wave measurements should be used.• All uniformity specifications exclude process and measurement variations such as uncontrolled channeling effects, anneal/activation process

non-uniformity, dielectric non-uniformity and (measurement) equipment error.• All measurements made using 10mm-edge exclusion for sheet resistance and 3mm for Therma-Wave measurements.

Beam Stability

• ≤ 10% beam current drift during 1 hour of operation• ≤ 20 glitches per hour at 80% of maximum beam current under normal operating conditions for singly charged

11B+, 49BF2+, 31P+ or 75As+.

Note: Must be tested in accordance with Axcelis’ beam stability procedure.

Charge Control Technology

• For process control, a redundant system of three small disk-mounted antennas is standard. These antennasmonitor peak negative and positive beam-potential values in real time. The recorded peak values are displayed on the Operator Interface (OI) and saved in the Implant Data Log (IDL). These values may be used as reference for specific charge-control issues, such as verification of hardware functionality or correlation to device performance.

• Plasma Electron Flood (PEF-Xe) is standard. Designed to deliver superior charge control performance, the PEF-Xe achieves charge control for the most aggressive conditions, allowing maximum productivity. Xenon (Xe) plasma is generated in an isolated chamber near the wafer surface. The Xe plasma produces low energy (1eV) electrons, which are electrically coupled to the beam through a plasma bridge, providing maximum neutralization efficiency under a wide window of operation. High-speed closed-loop control circuitry ensures constant operation during pressure change conditions experienced during photoresist outgassing.

Contamination Control

Energy Contamination• ≤ 1% effective energy contamination for all specified decel conditions.• Effective energy contamination is to be measured using techniques described in the GSDIII/LED detailed

specification.

Dopant Cross-Contamination≤ 0.5% of implanted dose using 31P+ 1.0E17 atoms/cm2 implant at 80keV followed by a 75As+ 1.0E16 atoms/cm2

implant at 60keV

Metal ContaminationMaterial With Virtual Slot DiskTi, Cr, Mn, Fe, Ni, Cu ≤ 5.0E10 atoms/cm2 (5ppm) each and ≤ 3.0E11 atoms/cm2

(30ppm) total for 75As+ 1.0E16 atoms/cm2, 70keV, 12mA implant (TXRF analysis)

Al ≤ 1.0E12 atoms/cm2 (100ppm) for 75As+ 1.0E16 atoms/cm2, 70keV, 12mA implant (O-leak SIMS analysis)

Note: Metal contamination tests are compared to suitable non-implanted control wafers.

Particle ContaminationParticles Size (µm) Front Side Added Defects (p/cm2)≥ 0.16 ≤ 0.18≥ 0.20 ≤ 0.11Notes:

• Specified as average particle counts following all Axcelis Best Methods and Practices

• Measured with ≥3mm edge exclusion

Low Energy Extended Life Source Reliability

Species Beam Current Average Lifetime (hr)11B+ or 49BF2

+ Maximum ≥ 8031P+ or 75As+ Maximum ≥ 125Mixed Species 80% of Maximum ≥ 168Note: Mixed species includes 75As+, 31P+, and 11B+, or 49BF2

+ with no single species running ≥ 50% of the time.

AutoTuneTM Beam Setup Performance

Transition Average Time (minutes)Within species ≤ 5Gas to gas ≤ 5Cold start to gas ≤ 15Note: Solid source material may be run with the addition of the optional vaporizer source assembly.

System Reliability

Wafer Breakage Wafer Handling Availability< 1 broken in 100,000 < 1 mishandled in 10,000 ≥ 85%Note: Reliability metrics defined and measured in accordance with SEMI E10-0699

Safety

ComplianceMachines designated for shipment to Europe will bear CE Mark and declaration upon customer request. CE Markincludes the machinery (annex I), Low Voltage, and Electromagnetic Compatibility Directives.

X-Ray Emissions• ≤ 0.06µSievert/hr (60mrem/hr) at 150mm from all machine surfaces.

System Layout

4.58m

Solaris Operator Interface

Triple Surface Disk Faraday

In-Air Robot

90º Analyzer Magnet

P2 and P3 Cryo Pumps

Dual-Slit Decel Extraction Electrode

Low-Energy Extended Life Source

P1 Source Turbo Pump

Modular SDS/High Pressure Gas Box, Capable of up to 5 Strings

Facilities Enclosure (Water, N2, Ar, etc.)

3.11m

P9 Process Chamber Cryo Pump

www.axcelis.com

58170 September 2001© 2001 Axcelis Technologies, Inc.The information in this document is subject to change without notice and is not to be construed as a commitment by Axcelis Technologies, Inc.

Facility Requirements

Footprint and WeightLength (in/mm) Width (in/mm) Height (in/mm) Weight (lb/kg)180.3/4580 122.4/3110 101.9/2590 30,470/13,821

Ambient Atmosphere• Temperature: 60-80°F (15-27°C)• Relative Humidity: 45-55%• Approximate Heat Load to room: 3kW

Electrical PowerApproximately 45kVA, 208 VAC at 50/60Hz ±5%, 3-phase, 4 wire plus ground. The grounding conductor shall run parallelwith the neutral and terminate at the service-box grounding bar.

Cooling Water• Flow: 17.8 GPM (67.28 LPM)• Inlet Pressure: 55-75PSIG (380-517kPa)• Pressure Drop: 15PSIG (103kPa) minimum• Inlet Temperature: 55-70°F (13-21°C)• Approximate Heat Load: 37kW

Compressed Dry Air (CDA)• Pressure: 90-100PSIG (621-690kPa)• Flow (peak): 3.0 SCFM (85 SLM)• Flow (Average): 0.5 SCFM (14 SLM)

Dry Nitrogen• Pressure 70PSIG (483kPa)• Flow 6SCFM (170SLM)

Argon• Pressure: 20 PSIG (138kPa)• Flow: 0.0007 SCFM (0.02 SLM)

Exhaust Air• Total exhaust less roughing pumps 1500 CFM (708 l/s)• 500CFM (238 l/s) for each exhaust• Each pump 42-65 CFM (20-31 l/s)

Note: For reference only. Consult current revision of Axcelis Drawing 8500551 for requirements. Some optional configurations have different

facility requirements.

DisclaimerAll specifications in this document are based on Axcelis best methods and practices, and on specific test conditions. Conducting the tests usingdifferent procedures, different conditions, or special (non-standard) tool configurations may produce different results. Performance on customerdeveloped processes and tests should be reviewed at the time of system purchase.