6 25 tga2813-sm

TGA2813-SM 3.1 to 3.6 GHz 100 W GaN Power Amplifier

Data Sheet Rev B, October 2019 | Subject to change without notice 1 of 15 www.qorvo.com

®

General Description

Qorvo’s TGA2813-SM is a packaged high power S-band

amplifier which operates from 3.1 to 3.6 GHz. The

TGA2813-SM is designed using Qorvo’s QGaN25

0.25-μm GaN on SiC process.

The TGA2813-SM typically provides greater than 100 W of

saturated output power, 56% power-added efficiency, and

24 dB power gain.

The TGA2813-SM is available in a low-cost, surface mount

42 lead 7 x 9 Overmold QFN. It is ideally suited to support

both commercial and defense related radar applications.

Both RF ports have integrated DC blocking capacitors and

are fully matched to 50 ohms.

Lead-free and RoHS compliant

QFN 7 x 9 mm 42 L

Product Features

• Frequency Range: 3.1–3.6 GHz

• POUT: >50 dBm at PIN = 26 dBm

• Power Gain: >24 dB at PIN = 26 dBm

• PAE: >56 % at PIN = 26 dBm

• Bias: VD = 30 V pulsed (PW = 100 µs, DC = 10 %),

IDQ = 300 mA

• Package Dimensions: 7.0 x 9.0 x 1.1 mm

Applications

• Military Radar

• Commercial Radar

Functional Block Diagram

Ordering Information

Part Description

TGA2813-SM 3.1–3.6 GHz, 100 W GaN Power Amplifier

TGA2813-SM_EVB TGA2813-SM Evaluation Board

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http://www.qorvo.com/

TGA2813-SM

3.1 to 3.6 GHz 100 W GaN Power Amplifier


®

Absolute Maximum Ratings

Parameter Value/Range

Drain Voltage (VD) 40 V

Gate Voltage Range (VG) −8 to 0 V

Drain Current (ID) 10.4 A

Gate Current (IG) See Graph (page 9)

Power Dissipation (PDISS), 85 °C 202 W

Input Power, CW, 50 Ω, (PIN) 30 dBm

Input Power, CW, VSWR 3:1, VD = 30 V, 85 °C, (PIN)

27 dBm

Mounting Temperature (30 Seconds) 260 °C

Storage Temperature −55 to 150 °C

Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied

Recommended Operating Conditions

Parameter Value/Range

Drain Voltage (VD) Pulsed: PW = 100 µs, DC = 10 %

30 V

Drain Current (IDQ) 300 mA

Drain Current Under RF Drive (ID_DRIVE) See plots p. 5-7

Gate Voltage Range (VG) −2.8 to −2.0 V

Gate Current Under RF Drive (IG_DRIVE) See plots p. 9

Temperature (TBASE) −40 to 85 °C

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all

recommended operating conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25 °C, VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA

Parameter Min Typical Max Units

Operational Frequency Range 3.1 3.6 GHz

Input Return Loss >6 dB

Output Return Loss >3.5 dB

Output Power at PIN = 26 dBm 49 >50 dBm

Power Gain at PIN = 26 dBm >24 dB

Power Added Efficiency at PIN = 26 dBm 46 >56 %

Gate Leakage (VD = 10 V, VG = −3.7 V) −52 −3 mA

Output Power Temperature Coefficient −0.008 dBm/°C


TGA2813-SM



®

Typical Performance: Small Signal

Conditions unless otherwise specified: VD = 30 V, IDQ = 300 mA

0

3

6

9

12

15

18

21

24

27

30

2.5 2.8 3.1 3.4 3.7 4.0

S2

1 (

dB

)

Frequency (GHz)

Gain vs. Frequency vs. Temp.

-40 °C

25 °C

85 °C

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S11

(d

B)

Frequency (GHz)

Input Return Loss vs. Frequency vs. Temp.

-40 °C

25 °C

85 °C

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S2

2 (

dB

)

Frequency (GHz)

Output Return Loss vs. Freq. vs. Temp.

-40 °C

25 °C

85 °C

0

3

6

9

12

15

18

21

24

27

30

2.5 2.8 3.1 3.4 3.7 4.0

S2

1 (

dB

)

Frequency (GHz)

Gain vs. Frequency vs. VD

28 V

30 V

32 V

Temp = 25 °C

24 V

0

3

6

9

12

15

18

21

24

27

30

2.5 2.8 3.1 3.4 3.7 4.0

S2

1 (

dB

)

Frequency (GHz)

Gain vs. Frequency vs. IDQ

150 mA

300 mA

600 mA

Temp = 25 °C


TGA2813-SM



®

Typical Performance: Small Signal

Conditions unless otherwise specified: VD = 30 V, IDQ = 300 mA

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S11

(d

B)

Frequency (GHz)

Input Return Loss vs. Frequency vs. VD

24 V 28V 30 V 32 V

Temp = 25 °C

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S11

(d

B)

Frequency (GHz)

Input Return Loss vs. Frequency vs. IDQ

Temp = 25 °C

150 mA

300 mA

600 mA

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S2

2 (

dB

)

Frequency (GHz)

Output Return Loss vs. Frequency vs. VD

28 V

30 V

32 VTemp = 25 °C

24 V

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

2.5 2.8 3.1 3.4 3.7 4.0

S2

2 (

dB

)

Frequency (GHz)

Output Return Loss vs. Frequency vs. IDQ

150 mA

300 mA

600 mA

Temp = 25 °C


TGA2813-SM



®

Typical Performance: Large Signal

Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA

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50

51

52

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

PO

UT

(dB

m)

Frequency (GHz)

Output Power vs. Frequency vs. Temp.

-40 °C @ PIN = 23 dBm

25 °C @ PIN = 26 dBm

85 °C @ PIN = 26 dBm

48

48.5

49

49.5

50

50.5

51

51.5

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

PO

UT

(dB

m)

Frequency (GHz)

Output Power vs. Frequency vs. PIN

23 dBm 26 dBm 27 dBm 28 dBm

Temp = 25 °C

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Pow

er A

dded E

ffic

ien

cy (

%)

Frequency (GHz)

PAE vs. Frequency vs. Temp.

-40 °C @ PIN = 23 dBm

25 °C @ PIN = 26 dBm

85 °C @ PIN = 26 dBm

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60

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Po

we

r A

dd

ed

Effic

ien

cy (

%)

Frequency (GHz)

PAE vs. Frequency vs. PIN


Temp = 25 °C

4000

4500

5000

5500

6000

6500

7000

7500

8000

2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Dra

in C

urr

ent

(mA

)

Frequency (GHz)

Drain Current vs. Frequency vs. Temp.

-40 °C @ PIN = 23 dBm

25 °C @ PIN = 26 dBm

85 °C @ PIN = 26 dBm

4000

4500

5000

5500

6000

6500

7000

7500

8000

2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Dra

in C

urr

ent

(mA

)

Frequency (GHz)

Drain Current vs. Frequency vs. PIN


Temp = 25 °C


TGA2813-SM



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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Ga

te C

urr

en

t (m

A)

Frequency (GHz)

Gate Current vs. Frequency vs. Temp.

-40 °C @ PIN = 23 dBm

25 °C @ PIN = 26 dBm

85 °C @ PIN = 26 dBm

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30

2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Ga

te C

urr

en

t (m

A)

Frequency (GHz)

Gate Current vs. Frequency vs. PIN


Temp = 25 °C

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25

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0 5 10 15 20 25 30

PO

UT

(dB

m)

PIN (dBm)

Output Power vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C

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32

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0 5 10 15 20 25 30

Gain

(dB

)

PIN (dBm)

Power Gain vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C

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1000

2000

3000

4000

5000

6000

7000

8000

0 5 10 15 20 25 30

Dra

in C

urr

ent

(mA

)

PIN (dBm)

Drain Current vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C

-1

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29

34

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0 5 10 15 20 25 30

Gate

Curr

ent

(mA

)

PIN (dBm)

Gate Current vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C


TGA2813-SM



®


Conditions unless otherwise specified: VD = 30 V (PW = 100 µs, DC = 10 %), IDQ = 300 mA,

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0 5 10 15 20 25 30

PO

UT

(dB

m)

PIN (dBm)

Output Power vs. Input Power vs. Temp.

-40 °C

25 °C

85 °C

Freq = 3.3 GHz

0

1000

2000

3000

4000

5000

6000

7000

8000

0 5 10 15 20 25 30

Dra

in C

urr

ent

(mA

)PIN (dBm)

Drain Current vs. Input Power vs. Temp.

-40 °C

25 °C

85 °C

Freq = 3.3 GHz

-1

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24

29

34

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0 5 10 15 20 25 30

Gate

Curr

ent

(mA

)

PIN (dBm)

Gate Current vs. Input Power vs. Temp.

-40 °C

25 °C

85 °C

Freq = 3.3 GHz

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

PO

UT

(dB

m)

Frequency (GHz)

Output Power vs. Frequency vs. VD

24 V

28 V

30 V

32 V

PIN = 26 dBm, Temp = 25 °C

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Pow

er A

dded E

ffic

ien

cy (

%)

Frequency (GHz)

PAE vs. Frequency vs. VD

24 V

28 V

30 V

32 V


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20

22

24

26

28

2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Gain

(dB

)

Frequency (GHz)

Power Gain vs. Frequency vs. VD

24 V

28 V

30 V

32 V



TGA2813-SM



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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

PO

UT

(dB

m)

PIN (dBm)

Output Power vs. Frequency vs. Pulse

PW = 500 µsec, DC = 20 %

PW = 100 µsec, DC = 10 %


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52

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62

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2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Pow

er A

dded E

ffic

ien

cy (

%)

PIN (dBm)

PAE vs. Frequency vs. Pulse

PW = 500 µsec, DC = 20 %

PW = 100 µsec, DC = 10 %


-60

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30

2f o

Outp

ut P

ow

er

(dB

c)

PIN (dBm)

2nd Harmonic vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C

-60

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30

3f o

Outp

ut P

ow

er

(dB

c)

PIN (dBm)

3rd Harmonic vs. Input Power vs. Freq.

3.1 GHz

3.3 GHz

3.5 GHz

Temp = 25 °C

-60

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30

2f o

Outp

ut P

ow

er

(dB

c)

PIN (dBm)

2nd Harmonic vs. Input Power vs. Temp.

-40 °C

25 °C

85 °C

Freq = 3.3 GHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30

3f o

Outp

ut P

ow

er

(dB

c)

PIN (dBm)

3rd Harmonic vs. Input Power vs. Temp.

-40 °C

25 °C

85 °C

Freq = 3.3 GHz


TGA2813-SM



®

Notes:

1. Thermal resistance measured to back of package.

2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability

Estimates

Thermal and Reliability Information

Parameter Test Conditions Value Units

Thermal Resistance (θJC) 1 TBASE = 85 °C, VD = 30 V, IDQ = 300 mA, PDISS = 9 W

0.193 °C/W

Channel Temperature (TCH) (No RF drive) 2 86.7 °C

Thermal Resistance (θJC) 1 TBASE = 85 °C, VD = 30 V, ID_Drive = 7.2 A, (PW = 100 µs, DC = 10%), Freq. = 3.3 GHz, PIN = 27 dBm, POUT = 50.7 dBm, PDISS = 93 W

0.248 °C/W

Channel Temperature (TCH) (Under RF drive) 2 108.1 °C

Power Dissipation and Maximum Gate Current

Test conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX

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60

70

80

90

100

110

120

2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8

Pow

er

Dis

sip

ation

(W

)

Frequency (GHz)

PDISS vs. Frequency vs. TBASE


24V 300mA PW=100µs DC=10%

28V 300mA PW=100µs DC=10%

30V 300mA PW=100µs DC=10%

30V 300mA PW=500µs DC=20%

32V 300mA PW=100µs DC=10%0

25

50

75

100

125

150

175

200

225

250

110 120 130 140 150 160 170 180

Maxi

mum

Gate

Curr

ent

(mA

)

Channel Temperature ( C)

IG_MAX vs. TCH vs. Per Stage

Stage 1

Stage 2

Total


http://www.qorvo.com/go/gan-device-thermal-resistance

http://www.qorvo.com/go/gan-device-thermal-resistance

TGA2813-SM



®

Applications Information

Bias-up Procedure

Set ID limit to 10 A, IG limit to 50 mA

Apply −5 V to VG

Apply +30 V to VD; ensure IDQ is approx. 0 mA

Adjust VG until IDQ = 300 mA

Turn on RF supply

Bias-down Procedure

Turn off RF signal

Reduce VG to −5 V; ensure IDQ is approx. 0 mA

Set VD to 0 V

Turn off VD supply

Turn off VG supply

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RFIN

GND

GND

GND

GND

GND

RFIN

RFIN

GND

GND

GND

GND

GND

GND

GND

GND

GND

GND

RFOUT

RFOUT

GND

GND

GND

GND

GND

RFOUT

TGA2813-SM

U1


TGA2813-SM



®

Pin Layout & Description

Pin Description

Pin No. Symbol Description

1, 2, 29, 30 VD2 Drain voltage; bias network is required; see recommended Application Information on page 10

5, 26 VG2 Gate voltage; bias network is required; see recommended Application Information on page 10

7, 24 VD1 Drain voltage; bias network is required; see recommended Application Information on page 10

9, 22 VG1 Gate voltage; bias network is required; see recommended Application Information on page 10

15, 16 RFIN Input; matched to 50 Ω; DC blocked

36, 37 RFOUT Output; matched to 50 Ω; DC blocked. Pad is DC grounded.

3, 4, 6, 8, 10-14, 17-21, 23, 25, 27, 28, 31-35, 38-42

GND Connected to ground paddle; must be grounded on PCB

1

2

3

4

5

6

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40

39

38

37

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8

9

30

29

28

27

26

25

24

23

22

36

35

34

33

32

31

10

11

12

13

14

15

16

17

18

19

20

21


TGA2813-SM



®

Evaluation Board and Board Mounting Detail

Material:

Layer 1: ROGER 4350, 0.010 thick

Metal 1 and Metal 2: 1.0 oz. Copper per layer

Notes:

1. Both Top and Bottom VD and VG must be biased

Bill of Material

Reference Design Value Description Manufacture Part-Number

C1, C6–C10, C13, C16 10000 pF Cap, 0402, 50 V, 10%, X7R Various

C2, C4, C11, C14 1 μF Cap, 0805, 25 V, 10%, X7R Various

C3, C5, C12, C15 47 μF Cap, 1206, 25 V, 20%, X5R Various

J1, J2 Jumper Wires 20 AWG Various


TGA2813-SM



®

Mechanical Information

Units: millimeter

Tolerances: unless specified

x.x = ± 0.01

x.xxx = ± 0.005

Package Metal Base and Leads are GOLD PLATED

Marking:

2813-SM: Part number

YY: Part Assembly year

WW: Part Assembly week

MXXX: Lot Number


TGA2813-SM



®

Assembly Notes

Compatible with the latest version of J-STD-020 Lead Free solder, 260 °C.

Recommended Soldering Temperature Profile


TGA2813-SM



®

Handling Precautions

Parameter Rating Standard

Caution! ESD-Sensitive Device

ESD-Human Body Model (HBM) 1C JS-001-2014

ESD-Charge Device Model (CDM) C3 JS-002-2014

MSL-Moisture Sensitivity Level 3 JEDEC/IPC/JEDEC J-STD-020

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations.

Web: www.qorvo.com

Tel: 1-844-890-8163

Email: [email protected]

Important Notice

The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained

herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained

herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for

Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any

patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by

such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS

DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS

WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR

OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in

medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe

personal injury or death.

Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

RoHS Compliance

This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and

Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C15H12Br402) Free

• PFOS Free

• SVHC Free



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6 25 tga2813-sm

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