600w llc demo board.ppt - infineon technologies · 2018-08-20 · title: microsoft powerpoint -...
TRANSCRIPT
600W LLC Demo Board
Francesco Di DomenicoIFAT PMM APS SE ACHV DC/DC Converters Applications
Table of contents
� General description
� Efficiency results
� Design Concept
Page 2Copyright © Infineon Technologies AG 2014. All rights reserved.
Table of contents
� General description
� Efficiency results
� Design Concept
Page 3Copyright © Infineon Technologies AG 2014. All rights reserved.
Prototype Specifications
Half Bridge LLC
with synchronous rectification
in center tap configuration
Vin 350-410VDC
Vin_nom 380VDC
Vout_nom 12VDC
Iout 50A
SR MOSFETs
• OptiMOSTM BSC010N04LS
• New generation
• Best FOM Rds,on x Qg
• Best FOM Rds,on x Qoss
Primary HV MOSFETs
• CoolMOSTM IPP60R190P6
• Reduced Gate Charge (Qg)
• Reduced Eoff
• High body diode ruggedness LLC analog controller
ICE2HS01G
HB Gate Drive IC
2EDL05N06PF
Bias QR Flyback
controller
ICE2QR2280Z
Iout 50A
Po 600W
fres=f0 157kHz
fmin 90kHz
fmax 210kHz
Transformer
turns ratio 16:1
Cr 66nF
Lr 15.5uH
Lm 195uH
Resonant inductor
RM12 core
Transformer
PQ35/35 core
Page 4Copyright © Infineon Technologies AG 2014. All rights reserved.
PCB Boards Layout: main power board and Control and Bias daughter boards
• Power Density>20W/inch3
Controller BoardBias Board
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Main Power Board Schematic
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Bias Board Schematic
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Analog Control Board Schematic
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Digital Control Daughter Board Schematic
Dig
ital
Contr
oller
(DP2B /
XM
C)
Page 9Copyright © Infineon Technologies AG 2014. All rights reserved.
PCB structure
Page 10Copyright © Infineon Technologies AG 2014. All rights reserved.
Table of contents
� General description
� Efficiency results
� Design Concept
Page 11Copyright © Infineon Technologies AG 2014. All rights reserved.
Efficiency plot at Vin=380Vdc (Bias consumption not included)
Page 12Copyright © Infineon Technologies AG 2014. All rights reserved.
10%Pmax Vin=380Vdc
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
Turn-off losses
Body diode losses
Driving losses
Conduction Losses
0
0.5
1
1.5
2
2.5
3
3.5
4
10%Pmax Overall losses spread [W]
Tracks, Cin, sensing
Output capacitance
Output choke
Resonant choke
SR losses
Power trafo
Primary mosfets
(IPP60R190P6)
0
Loosses spread on each device at 10%Pmax [W]
Page 13Copyright © Infineon Technologies AG 2014. All rights reserved.
50%Pmax Vin=380Vdc
0
0.2
0.4
0.6
0.8
1
1.2
Turn-off losses
Body diode losses
Driving losses
Conduction Losses
70
Losses spread on each device at 50%Pmax [W]
0
1
2
3
4
5
6
7
50%Pmax Overall losses spread [W]
Tracks, Cin, sensing
Output capacitance
Output choke
Resonant choke
SR losses
Power trafo
Primary mosfets
(IPP60R190P6)
Page 14Copyright © Infineon Technologies AG 2014. All rights reserved.
100%Pmax Vin=380Vdc
0
0.5
1
1.5
2
2.5
3
3.5
Turn-off losses
Body diode losses
Driving losses
Conduction Losses
180
Loosses spread on each device at 100%Pmax [W]
0
2
4
6
8
10
12
14
16
100Pmax Overall losses spread [W]
Tracks, Cin, sensing
Output capacitance
Output choke
Resonant choke
SR losses
Power trafo
Primary mosfets (IPP60R190P6)
Page 15Copyright © Infineon Technologies AG 2014. All rights reserved.
Table of contents
� General description
� Efficiency results
� Design Concept
Page 16Copyright © Infineon Technologies AG 2014. All rights reserved.
Design procedure: input data
nomout
nomin
V
Vn
_
_
2 ⋅=
2
),,(max_
min_minmin
in
ox
V
VnFmQKM
⋅=≡
2
),,(min_
max_maxmax
in
ox
V
VnFmQKM
⋅=≡
Page 17Copyright © Infineon Technologies AG 2014. All rights reserved.
Resonant tank components and related resonant frequencies
� n=Vin_nom/(2xVo)=380/(2*12)≈16
� Lm=195µH
� Lr=15.5µH
� Ln=Lm/Lr=12.5
� Cr=66nF� Cr=66nF
kHzCrLr
fo 1572
1=
⋅⋅=
πkHz
CrLmLrfp 7.42
)(2
1=
⋅+⋅=
π
Page 18Copyright © Infineon Technologies AG 2014. All rights reserved.
1
1.1
1.2
dc-gain curve (600W LLC hardware revision E02)
5 A
2min_
max_max
in
o
V
VnM
⋅=
0.6
0.7
0.8
0.9
gain
frequency [Hz]
5 A
15 A
25 A
35 A
50 A2
max_
min_min
in
o
V
VnM
⋅=
Page 19Copyright © Infineon Technologies AG 2014. All rights reserved.
Energy related calculations (ref. IPP60R190P6 device parameters)
ALf
Vn
msw
oag 672.0
2
22I
max_
min_m =⋅⋅
⋅⋅
⋅=
ππ
JILLEn magrmres µ1.95²)(2
1min_min_ =⋅+⋅=
1max_min_ capres EnEn >⇒
JVerCoEn DScap µ9²))(2(2
1max_max_ ≈⋅⋅=
max_min_ capres EnEn >⇒
Page 20Copyright © Infineon Technologies AG 2014. All rights reserved.
Qoss, Imag,pk, tdead,min, tecs relationship
ICHB
Im,pk
IQ2
)1(I)( m,2
ecs
pkQ
t
ttI −⋅= ecstt ≤∀
0)(2 =tIQ ecstt ≥∀),,( ,,
gd
dsthgstotgecs
C
CVRft =
ICHBIm,pk
VHB
VBULK
Vecsdeadpkecspk
t
C QosstttdttI
dead
HB 400@min,m,m,
0
,2)(II2
1)(
min,
⋅=−⋅⋅⋅= +∫
tecs tdead,min
pk
Vossecsdead
Qtt
m,
400@,min,
I
2
2
⋅+=( )1
Page 21Copyright © Infineon Technologies AG 2014. All rights reserved.
Time related calculations (ref. IPP60R190P6 device parameters)
ALf
Vn
msw
oag 66.1
2
22I
min_
max_m =⋅⋅
⋅⋅
⋅=
ππ
sec1302 400@,
nQt
tVossecs
≈⋅
+=
ALf
Vn
msw
oag 672.0
2
22I
max_
min_m =⋅⋅
⋅⋅
⋅=
ππ
sec130I
2
2 max,m
400@,min, n
Qtt
ag
Vossecsdead ≈
⋅+=
sec311I
2
2 min,m
400@,max, n
Qtt
ag
Vossecsdead ≈
⋅+=
Page 22Copyright © Infineon Technologies AG 2014. All rights reserved.
Main transformer structure: PQ35/35 core with TDK PC95 ferrite material
Page 23Copyright © Infineon Technologies AG 2014. All rights reserved.
Resonant choke: RM12 core, material N87
Page 24Copyright © Infineon Technologies AG 2014. All rights reserved.