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    ISOCOM COMPONENTS LTD

    Unit 25B, Park View Road West,Park View Industrial Estate, Brenda Road

    Hartlepool, Cleveland, TS25 1YD

    0.26

    20.3219.32 4.0

    3.0

    0.5

    7.62

    13Max

    7.0

    6.0

    2.54

    1.2

    0.5

    1.2

    3.0

    4.0

    3.0

    3.35

    7.06.0

    0.5

    0.5

    7.62

    1

    2

    4

    3

    0.26

    13Max

    2.54

    3.0

    10.16

    9.16 4.03.0

    3.35

    0.5

    7.06.0

    7.62

    2

    3

    4

    7

    6

    5

    1.2

    13Max

    0.5

    0.26

    2.54

    Dimensions in mm

    HIGH DENSITY MOUNTING

    PHOTOTRANSISTOR

    OPTICALLY COUPLED ISOLATORS

    APPROVALS

    l UL recognised, File No. E91231

    'X' SPECIFICATION APPROVALSl VDE 0884 in 3 available lead form : -

    - STD

    - G form- SMD approved to CECC 00802

    l BSI approved - Certificate No. 8001

    DESCRIPTION

    The TLP521, TLP521-2, TLP521-4 series ofoptically coupled isolators consist of infraredlight emitting diodes and NPN silicon phototransistors in space efficient dual in line plastic

    packages.

    FEATURES

    l Options :-10mm lead spread - add G after part no.Surface mount - add SM after part no.Tape&reel - add SMT&R after part no.

    l High Current Transfer Ratio ( 50% min)l High Isolation Voltage (5.3kV

    RMS,7.5kV

    PK)

    l High BVCEO

    ( 55Vmin )l All electrical parameters 100% testedl Custom electrical selections available

    APPLICATIONS

    l Computer terminalsl Industrial systems controllersl Measuring instrumentsl Signal transmission between systems of

    different potentials and impedances

    3.35

    5.084.08

    1 8

    TLP521

    TLP521-2

    TLP521-4

    OPTION G

    7.62SURFACE MOUNTOPTION SM

    10.16

    0.26

    1

    2

    3

    7

    8

    16

    15

    10

    9

    6 11

    5 12

    14

    4 13

    ISOCOM INC

    1024 S. Greenville Ave, Suite 240,

    Allen, TX 75002 USATel: (214) 495-0755 Fax: (214) 495-0901

    e-mail info@isocom com

    10.469.86

    0.60.1 1.25

    0.75

    TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4

    TLP521XGB, TLP521-2XGB, TLP521-4XGB

    TLP521X, TLP521-2X, TLP521-4X

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    PARAMETER MIN TYP MAX UNITS TEST CONDITION

    Input Forward Voltage (VF) 1.0 1.15 1.3 V I

    F= 10mA

    Reverse Current (IR) 10 A V

    R= 4V

    Output Collector-emitter Breakdown (BVCEO

    ) 55 V IC

    = 0.5mA( Note 2 )

    Emitter-collector Breakdown (BVECO

    ) 6 V IE

    = 100A

    Collector-emitter Dark Current (ICEO

    ) 100 nA VCE

    = 20V

    Coupled Current Transfer Ratio (CTR) (Note 2)

    TLP521, TLP521-2, TLP521-4 50 600 % 5mA IF, 5V V

    CE

    CTR selection available BL 200 600 %

    GB 100 600 %

    GB 30 % 1mA IF, 0.4V V

    CE

    Collector-emitter Saturation VoltageVCE

    (SAT)

    0.4 V 8mA IF

    , 2.4mA IC-GB 0.4 V 1mA I

    F, 0.2mA I

    C

    Input to Output Isolation Voltage VISO

    5300 VRMS

    See note 1

    7500 VPK

    See note 1

    Input-output Isolation Resistance RISO

    5x1010 VIO

    = 500V (note 1)

    Response Time (Rise), tr 4 s VCE

    = 2V ,

    Response Time (Fall), tf 3 s IC

    = 2mA, RL= 100

    Note 1 Measured with input leads shorted together and output leads shorted together.

    Note 2 Special Selections are available on request. Please consult the factory.

    ELECTRICAL CHARACTERISTICS ( TA

    = 25C Unless otherwise noted )

    ABSOLUTE MAXIMUM RATINGS

    (25C unless otherwise specified)

    Storage Temperature -55C to + 125COperating Temperature -30C to + 100CLead Soldering Temperature(1/16 inch (1.6mm) from case for 10 secs) 260C

    INPUT DIODE

    Forward Current 50mAReverse Voltage 6VPower Dissipation 70mW

    OUTPUT TRANSISTOR

    Collector-emitter Voltage BVCEO

    55VEmitter-collector Voltage BV

    ECO6V

    Power Dissipation 150mW

    POWER DISSIPATION

    Total Power Dissipation 200mW

    (derate linearly 2.67mW/C above 25C)

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    50

    -30 0 25 50 75 100 125

    Ambient temperature TA ( C )

    150

    0

    200

    Ambient temperature TA

    ( C )

    Collectorpowerdissipation

    PC

    (mW)

    60

    30

    20

    10

    0

    40

    50

    -30 0 25 50 75 100 125

    Collector Power Dissipation vs. Ambient Temperature

    Forward Current vs. Ambient Temperature

    30 0 25 50 75 100

    Collector-emitter voltage VCE ( V )

    Collector-emittersaturationvoltageV

    CE(SAT)

    (V)

    Collector-emitter SaturationVoltage vs. Ambient Temperature

    100

    TA

    = 25C

    0

    5

    10

    15

    20

    25

    0

    0.04

    0.08

    0.12

    0.16

    0.20

    0.24

    0.28

    IF

    = 5mAI

    C= 1mA

    Forward

    currentIF(mA)

    Collector Current vs. LowCollector-emitter Voltage

    5

    10

    20

    3040

    50

    0 0.2 0.4 0.6 0.8 1.0

    CollectorcurrentIC(m

    A)

    IF

    = 2mA

    Collector Current vs. Collector-emitter Voltage

    Collector-emitter voltage VCE

    ( V )

    CollectorcurrentIC(mA)

    Current Transfer Ratio vs. Forward Current

    CurrenttransferratioCTR(%)

    1 2 5 10 20 50

    0

    80

    120

    160

    200

    240

    0 2 4 6 8 10

    0

    10

    20

    30

    40

    50

    40

    50

    30

    20

    10

    15

    TA

    = 25C

    280

    320

    IF= 5mA

    VCE

    = 5VT

    A= 25C

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    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/