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6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI © 2017 IEEE International Solid-State Circuits Conference 1 of 31 A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI G. Steffan 1 , E. Depaoli 1 , E. Monaco 1 , N. Sabatino 1 , W. Audoglio 1 , A. A. Rossi 1 , S. Erba 1 , M. Bassi 2 , A. Mazzanti 2 1 STMicroelectronics, Pavia, Italy 2 Università degli Studi di Pavia, Pavia, Italy

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6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 1 of 31

A 64Gb/s PAM-4 Transmitter with 4-Tap

FFE and 2.26pJ/b Energy Efficiency in

28nm CMOS FDSOI

G. Steffan1, E. Depaoli1, E. Monaco1,

N. Sabatino1, W. Audoglio1, A. A. Rossi1,

S. Erba1, M. Bassi2, A. Mazzanti2

1 STMicroelectronics, Pavia, Italy

2 Università degli Studi di Pavia, Pavia, Italy

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 2 of 31

Outline

• Motivation

• Proposed TX Architecture

• Reconfigurable FFE

• Output Driver

• High-Speed Serializer

• Clock Generation

• Measurement Results

• Conclusions

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 3 of 31

Network Traffic: Growth and Challenges

72

,5

88

,7

10

8,5

132,1

16

0,6

194

,4

0

50

100

150

200

2015 2016 2017 2018 2019 2020

Exabyte

sper

Month

Challenges

• Gate count increases faster than I/O speed

• Power dissipation, rather than technology and routing, mostly limits max I/O density

• Increasing data rate at > 25Gb/s increases link losses and power consumption

PAM-4 Modulation

• Helps maintain loss budget by decreasing Nyquist frequency

• SNR degradation can be recovered by using FEC

3x

[Cisco, The Zettabyte Era: Trends and Analysis][OIF-FD-Client-400G/1T-01.0 White Paper]

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 4 of 31

High-Speed PAM-4/NRZ TX Design

High output amplitude

and linearity – to

preserve SNR and H/V

opening

Very high bandwidth –

to speed-up non-

adjacent level

transitions

Reconfigurable FFE –

to be compliant with

several standards

PAM-4/NRZ high/low

speed modes – for

auto-negotiation and

substitution of legacy

components

Precise and reliable

serialization with low

power

Challenges

PAM-4 PAM-4

PAM-4/NRZ

PAM-4/NRZ PAM-4/NRZ

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 5 of 31

8:4

8:4

8:4

8:4

8:4

8:4

8:4

8:4

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

LSB

MSB

40b

FFEL

Vdd,CMOS

MM

ML FFEM

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4x8b 4x4b

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

8b

C-2 C-1

C0

C1

C2

40:8

C-2 C-1

C0

C1

C2

40:8

5x8b

40b

4x8b 4x4b

8b

5x8b

TX Block Diagram

• Shift-registers delay 8bit bundles and generate five C[-2:2] FFE data-streams

• MUXs MM and ML enable C[-2:2] selection

• In PAM-4 mode, up to 4 FFE taps

• In NRZ mode, 40b LSB/MSB data is merged, but MM and ML can still be operated independently to provide up to 5 FFE taps

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 6 of 31

TX Block Diagram

6

12

24

6

3

6

12

3

Ou

tpu

t N

etw

ork

Vdd,DR

24

48

8:4

8:4

8:4

8:4

8:4

8:4

8:4

8:4

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

LSB

MSB

40b

FFEL

Vdd,CMOS

MM

ML FFEM

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4x8b 4x4b

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

8b

C-2 C-1

C0

C1

C2

40:8

C-2 C-1

C0

C1

C2

40:8

5x8b

40b

4x8b 4x4b

8b

5x8b

• Output driver is composed of 72 elements

• 24 driver elements are driven by LSB data, 48 by MSB data

• Dedicated voltage supply Vdd,DR=1.2V

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 7 of 31

TX Block Diagram

6

12

24

6

3

6

12

3

Ou

tpu

t N

etw

ork

Vdd,DR

24

48

8:4

8:4

8:4

8:4

8:4

8:4

8:4

8:4

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

LSB

MSB

40b

FFEL

Vdd,CMOS

MM

ML FFEM

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4:1

4x8b 4x4b

C-2 C-1 C0

C-2 C-1 C0

C0 C1 C2

C0 C1 C2

8b

C-2 C-1

C0

C1

C2

40:8

C-2 C-1

C0

C1

C2

40:8

5x8b

40b

4x8b 4x4b

8b

5x8b

REF CK

¸2¸4/5

I/Q

Generation

CK4-I

CK4-QPLL

2-8GHz

• PLL generates 2-8GHz clock signal

• High precision I/Q signals generator feeds the 40:1 serializer

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 8 of 31

Reconfigurable TX FFE

• At Full-Speed, it provides up to 4 FFE tap in PAM-4 mode and 5 tap in NRZ mode, meeting OIF CEI 56Gb/s MR and 28Gb/s KP4 standards

• At Half-Speed, data is oversampled and [C-2 ,C2] are mapped as 1-Pre/Post cursor, respectively, meeting 10Gb/s KR10 and 8.5Gb/s PCI Exp-3

• At Quarter-Speed, C2 is mapped as 1-Postcursor while C-2:1 are all set to the Main cursor. This configurations is compliant with 2.5Gb/s PCI-Exp1

FFEL

3

6

12

3C-1

C-2

C0

C-1

C-2

C0

C1

C0

C2

C1

C0

C2

C2 C1

C0

C-1

C-2C-2

C-1

C0

C1

C2

6

12

24

6C-1

C-2

C0

C-1

C-2

C0

C1

C0

C2

C1

C0

C2

C2 C1

C0

C-1

C-2C-2

C-1

C0

C1

C2

FFEM

Ou

tpu

t N

etw

ork

LSB

MSB

-21/72

-3/24

-21/72

-21/72

12/24

36/72

36/72

-9/24

-36/72

-36/72

-9/24

-36/72

2-PRE 1-PRE MAIN 1-POST 2-POST

45/72 -27/72

PAM-4 FS

NRZ FS

NRZ HS

NRZ QS

Coefficients Minimum Normalized Amplitude

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 9 of 31

State-of-the-art PAM-4 Output Drivers

• Hybrid voltage/current driver

• Very good linearity and high output

amplitude with 1V supply

• Bandwidth limited by increased load

• Low FFE programmability

• Pure current mode driver

• Simple implementation, high bandwidth

• Two supply domain and need of level shifter operating at output symbol rate

• High FFE programmability

[Bassi et al., ISSCC 2016, JSSC 2017] [Nazemi et al., ISSCC 2016]

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 10 of 31

Proposed Current Mode Driver

• InN and InP CMOS-level input data streams from serializer

• Gate voltages of MC1,2 current sources are constant, set by replica bias based on desired output swing Vref

• When output node is high, MC1,2 source is pulled to Vdd,CMOS, relaxing reliability constraints and allowing the use of thin oxide devices

<1>

<72>

<1>

<72>

InN InP

OutP OutN

Vbias

Vdd,CMOS Vdd,CMOS Vdd,CMOS

Vdd,DRVdd,DRVdd,DR

Vref

MC1 MC2

High output swing with good linearity and large bandwidth

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 11 of 31

Output Network

• 200V MM / 500V CDM, >>2kV HBM ESDs

• Driver capacitance is comparable with ESD

capacitance

• Double T-coil network enhances bandwidth

by 1.5 and improves impedance matching

at high frequency

Driver

Resistor

Load

BankESD

OutPCoil #1

Coil #2

ESD

OutNCoil #1

Coil #2

CBUMPCESDCDRIVERCLOAD

Coil #2Coil #1

-9

-6

-3

0

0 10 20 30

TF

[dB

]

Frequency [GHz]

With Coils

Without Coils

-30

-20

-10

0

0 10 20 30

Re

turn

Lo

ss [d

B]

Frequency [GHz]

With Coils

Without Coils

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 12 of 31

High-Speed Serializer Architectures

Half-rate architecture

• tBIT > tSetup + tMUX + tDIV – tD

• Low CPAR load of half-rate architecture

leads to very fast commutations

Quarter-rate architecture

• tBIT > tSetup + tMUX – tPULSE

• Higher CPAR load of quarter-rate

architecture leads to increased ISI

Propagating clock forward relaxes serializer timing constraints

Low load highly desirable to limit ISI

CK4-I CK4-Q

tMUX

tDIV

CK2

B0

B1

OUT

4:2

2:1

CPAR

D0

D1

D2

D3

CK4-I

CK4-Q

CK4-I

CK4-Q

FF

FF

FF

FF

tD

/2CK4-I

CK4-QSEL<3:0>

tPULSE

D0

D1

D2

D3

CK4-I

CK4-Q

SEL<0>

SEL<1>

SEL<2>

SEL<3>CK4-I

CK4-Q

tMUX

FF

FF

FF

FF

2xCPAR

OUT

4:1

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 13 of 31

b0 b2

b1 b3

b0 b1 b2 b3

CK4-I

CK4-Q

B0

B1

CK2

OUT

tMUXtMULT

tSetup

Proposed MUX Architecture

• Quarter-rate architecture to enhance speed and lower ISI

• Local X2 clock multiplier to save power

• Forward propagated delay implemented with X2 allows relaxed timing

constraints:

• tBIT > tSetup + tMUX – tMULT

CK4-I

CK4-QX2

tMUX

tMULT

CK2

B0

B1

D0

D2

D1

D3

OUT4:2 2:1

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 14 of 31

2

4

6

8

10

12

14

16

18

10 20 30 40 50

Jitte

r P

k-P

k [

ps]

Symbol Rate[Gsym/s]

Traditional 4:1 Mux

Proposed 4:1 Mux

Proposed MUX Architecture

• MUX 4:2 based on pass-gate to save power and guarantee tMUX > tMULT to respect

hold-time constraints

• NAND-based frequency doubler generates half rate clock for the last 2:1 MUX

• At 32 Gsym/s the Pk-Pk jitter on output node is reduce by 1.3 compared to a traditional

direct 4:1 MUX

CK4-I

CK4-QX2

tMUX

tMULT

CK2

B0

B1

D0

D2

D1

D3

OUT4:2 2:1

CK4-IP/N

CK4-QP/P

CK4-IN/P

CK4-QN/N

CK2P/N

X2

B0

CK2P

B1

CK2N

OUT

2:1

LAT

D0/D1

D2/D3

CK4-I/CK4-Q

B0/B1

4:2

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 15 of 31

Effects of I/Q Mismatches

• I/Q mismatches on quarter-rate clocks creates DCD on half-rate clock

• I/Q phase difference must be lower than 1.4°

Δ=5.6º

0.88UI1.12UI

Δ<1.4º

1UI1UI

CK-IP/N

CK-QP/P

CK-IN/P

CK-QN/N

CK2P/N

2UI

Δ

2UI

1UI-Δ 1UI+Δ1UI-Δ 1UI+Δ

CK4-I

CK4-Q

CK2

2UI

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 16 of 31

CK4-I

CK4-Q

CK2 1UI 1UI-Δ 1UI+Δ 1UI

2UI

2UI+Δ2UI-Δ

Effects of I/Q Duty-Cycle Distortion

• DCD on quarter-rate I/Q clocks translates to DCD on half-rate clocks with period of 4UI

CK-IP/N

CK-QP/P

CK-IN/P

CK-QN/N

CK2P/N

Δ<0.01UI

1UI 1UI 1UI 1UI

Δ=0.11UI

1UI 1UI1.11UI0.89UI

Generation of precise I/Q quarter-rate clocks is key, especially at high-speed

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 17 of 31

Clock Generation Tree

• Integer-N type PLL with two VCOs and output divider to generate

2-8GHz master clock

• Injection-Locking Ring Oscillator provides high-accuracy 8 phases against

PVTs

• Phase rotators interpolate 8 π/4-spaced phases to improve DNL and INL

• Quarter-rate clocks fed to serializer after DCC circuit

Locking

Signal

Vtune

CML to

CMOS

CML to

CMOS

6-8GHz

4-6GHzPFD CP

LPF

REF CK

/N

Bandgap

Regulator

Injection Locked Ring Oscillator

Integer-N PLL

CML to

CMOS

CML to

CMOS

DCC-I

DCC-Q

/1

/2

CK4-I

CK4-Q

Phase Rotator Duty-Cycle

Correction

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 18 of 31

Injection Locked Ring Oscillator

Supply voltage [V]

Temperature [°C]

Qu

ad

ratu

re p

ha

se

err

or

[°]

-40 0 40 80 120

8

4

0

-4

-80.8 0.9 1.0 1.1 1.2

-8

-6

-4

-2

0

2

4

6

8

0.8 0.9 1.0 1.1 1.2

Ph

ase E

rro

r [

]

Supply[V]

Phase Accuracy VS Supply Variation

a

-8

-6

-4

-2

0

2

4

6

8

-40 -20 0 20 40 60 80 100 120

Ph

ase

Err

or

[ ]

Temperature [⁰C]

Phase Accuracy VS Temperature Variation

Qu

ad

ratu

re p

ha

se

err

or

[°]

8

4

0

-4

-8

No calibration

Analog calibration ON

Analog + digital calibration

b

No calibration

Analog calibration ON

Analog + digital calibration

• A phase detector based on passive mixers measures the quadrature error and continuously tunes the oscillator Vtune for fine phase correction

• Concurrently, a window comparator monitors Vtune and drives digital coarse calibration in background.

• The quadrature phase error is kept lower than 1.5º when supply and temperature variations are between [0.9V, 1.2V] and [-40ºC, 120ºC]

preset

Locking

Signal

up

downvTH

vTL

clkLF

logiclogicregister

Fre

qu

en

cy C

od

e

Vtune

Buffer

Digital Loop

Analog Loop

fIN=8GHz

[Anzalone et al., ESSCIRC 2016]

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 19 of 31

Phase Rotator

• Phase Rotators consists of four slices driven by the ILRO outputs

• Each slice consists of 32 differential pair thermometric weighted to reduce switching

glitches and guarantee the monotonicity of the output phase

• At 11GHz, the maximum DNL and INL are 0.5 and 1 LSB, respectively

`

j1=135º,j2=180º

`

j1=90º,j2=135º

`

j1=45º,j2=90º

`

j1=0º,j2=45º

<0>

<15>

<0>

<15>

j1P j1N j2P j2N

1

0

-1

DN

L [

LS

B]

0

-1

INL

[L

SB

]

0.5

-0.5

1

2

-2

-3

-4

Code0 32 64 96 128

-1

-0.5

0

0.5

1

0 32 64 96 128

Measure DNL

-4

-3

-2

-1

0

1

2

0 32 64 96 128

Measure INL

= 2GHz with AQC = 11GHz with AQC = 11GHz without AQC

fIN=11GHz from ext

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 20 of 31

DCD Correction Circuit

• PMOS and NMOS switches operates independently

• Two 7 bit thermometric code to avoid glitches and guarantee the monotonicity of the correction

• DCD correction circuit capability equal to ±1.5% at 8GHz

INP,N OUTN,P

SELP<6:0>P,N

SELN<6:0>P,N

-2

-1

0

1

2

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14

DC

D @

8G

Hz [

%]

CODE

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 21 of 31

Chip Photo and Power Break-Down

PLL

Transmitter

• 10ML CMOS 28nm FDSOI CMOS from STMicroelectronics

• Chips encapsulated in flip-chip BGA packages

HF Serializer

45%

LF Serializer

8%Output Driver16%

Clock Gen.31%

• Power Consumption:

145mW @ 64Gb/s

• Vdd,CMOS=1V

• Vdd,DR=1.2V

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 22 of 31

Agilent DCA-X 86100D

Test Board

Ref Clock

-3

-2

-1

0

0 4 8 12 16 20

Insert

ion G

ain

[dB

]

Frequency [GHz]

Pkg&

Bo

ard

In

se

rtio

n G

ain

[d

B]

Frequency [GHz]

Measurement Setup

• Package and trace board loss

at 16GHz is 2.5dB

• Connectors and cable add

about two more dB of loss

• Total loss at 16GHz equal to

4.5dB

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 23 of 31

Output Eyes at 28/56 Gb/s

0.84UI 0.73V0.48UI

0.18V

• FIR setting:

[C-1 C0 C1]=[-1/24 18/24 -3/24]

• Vertical opening: 0.18V

• Horizontal opening: 0.48UI

• FIR setting:

[C-1 C0 C1]=[-1/24 18/24 -3/24]

• Vertical opening: 0.73V

• Horizontal opening: 0.84UI

PRBS-9 @ 28Gb/s QPRBS-13 @ 56Gb/s

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 24 of 31

Output Eyes at 32/64 Gb/s

0.75UI 0.6V0.36UI

0.14V

PRBS-9 @ 32Gb/s QPRBS-13 @ 64Gb/s

• FIR setting:

[C-1 C0 C1]=[-1/24 18/24 -3/24]

• Vertical opening: 0.14V

• Horizontal opening: 0.36UI

• FIR setting:

[C-1 C0 C1]=[-1/24 18/24 -3/24]

• Vertical opening: 0.6V

• Horizontal opening: 0.75UI

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 25 of 31

S22 and PLL Phase Noise

• Return loss better than the mask limit with margin

• Jitter of the clock is estimated by integrating phase noise starting from

500kHz offset

• The random jitter integrated up to 8GHz is 290fs

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 26 of 31

Comparison with State of Art

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 27 of 31

Conclusions

• Delivering high TX amplitude while preserving linearity and large

bandwidth is key for high-speed PAM-4 transmitters

• A new output driver allows high swing and good linearity with increased

supply while still employing thin-oxide devices operated reliably

• A smart FFE structure is proposed for back-compatibility with legacy

standards

• Measurements test chips realized in 28nm CMOS FDSOI technology by

STMicroelectronics prove the effectiveness of the proposed TX

6.4: A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI© 2017 IEEE International Solid-State Circuits Conference 28 of 31

Acknowledgement

• The authors are thankful to Dr. Guido Albasini, Daniele Baldi and Dr.

Davide Sanzogni and the layout team for their contributions