a compendium of recent optocoupler radiation test data · pdf filea compendium of recent...

A Compendium of Recent Optocoupler Radiation Test Data

K.A. LaBel 1, S.D. Kniffin 2, 1LA. Reed m,H.S. Kim a, J.L. Welt 4, D.L. Oberg 4, E. Normand 4,

A.H. Johnston 5, G.K. Lum 6, R. K0ga 7, S. Crain 7, J.R. Schwank s, G.L. Hash s,

S. Buchner 9, J. Mann 9, L. Simpkins 9, M. D'Ordine I°, C.A. Marshall I,

M.V. O'Bryan 11, C.M. Seidleck I1, L.X. Nguyen II, M.A. Carts II,

R.L. Ladbury 2, J.W. Howard 3,

NASA/GOddard Space Flight Center1; Orbital Sciences Corporation 2,

Jackson and Tull Chartered Engineers3; Boeing Corporation4; NASA/Jet Propulsion LaboratoryS;

Lockheed Martin Space Systems Company, Missiles and Space Operation 6;

The Aerospace CorporationT; Sandia National Laboratoriesa; Naval Research Laboratories9;

Ball Aerospace and Technologies Corporationl°; Raytheon Systems Corporation II

Abstract-We present a compendium of optocoupler radiationtest data including neutron, proton and heavy ion DisplacementDamage (DD), Single Event Transients (SET) and Total IonizingDose (TID). Proton data includes ionizing and non-ionizingdamage mechanisms.

1.INTRODUCTION

Optocouplers, also known as optoisolators, are hybrid

devices that are typically used by spaceflight designers to

provide electrical isolation between circuits such as

subsystem-to-subsystem interfaces. These devices usuallyconsist of a light emitting diode (LED) transmitter coupled

with a p-intrinsic-n (PIN) photodiode or phototransistor

receiver and, for certain devices, additional circuitry. Figure

1 illustrates a typical optocoupler [11- It should also be noted

that optocouplers are not just standalone devices, they are

often components in other devices such as DC/DC

converters.

This compendium compiles optocoupler radiation data that

has been gathered by a wide range of test organizations. This

includes both government and industry data obtained from anumber of test facilities utilizing various test methods.

k,_ Photocliode or Outputphototransistor

Figure 1: Typical Optocoupler Block Diagram

I1.RADIATION ISSUES

There are three major radiation issues affecting optocouplers

for space flight utilization.

A. Displacement Damage

Primarily, neutrons and protons cause displacement damage.

It is important to remember that while the protons are

causing DD, they are also contributing to TID, thus

depending on the prime degradation mode, some results

appear identical to TID. The time that it takes for DD toaffect a device a certain amount is generally much shorter

than the expected time that it would take for TID to cause

equivalent damage. Though many optical components

degrade from DD, the optocoupler devices that seem to bethe most sensitive are those that use amphotericaUy doped or

single heterojunction [2,3,4] light emitting diodes (LEDs);

double heterojunction LEDs appear to be less sensitive to

DD. Issues involving DD were first noted by in-flight

degradation on the TOPEX/Poseidon satellite. Several non-

critical status signals that utilized optocouplers failed duringthe mission. This radiation issue was first described by

Johnston, et al. [2]. Further work in this area has been done

to characterize DD effects in optocouplers [3,4,5,6,7]. DD isknown to affect the current transfer ratio (CTR) of these

devices and may affect other performance parameters such as

timing. CTR is defined as Phototransistor collector current

(Ic) divided by the LED forward current (IF). CTR lc

Ip

Issues such as particle energy, mapping of test energies to in-

flight predictions, application-_ific interpretation of testdata, initial device CTRs, sample-to-sample variance,

temperature and aging effects all must be considered fordevice selection and use.

B. ,Single Event Transients

SETs are induced by protons and heavy ions in higher

speed devices (>1 Mbps) and induced by heavy ions inslower devices. The first incident that brought the SET issueto the forefront were anomalies observed by NASA's Hubble

Space Telescope (lIST) following the installation of twoinstruments that contained high-speed optocouplers during

Servicing Mission 2. These anomalies prompted aninvestigation that found SET sensitivity in theseoptocouplers [1]. Further work has since explored themechanisms of these transients, the size of the transients

which vary by device performance and energetic particle

https://ntrs.nasa.gov/search.jsp?R=20000086134 2018-05-17T17:31:50+00:00Z

characteristics,circuit-specificeffects,types of particles thatinduce SETs, and angular dependence [5,8,9].

C. Total Ionizing Dose

Historically, TID was the prime radiation concern for

optocouplers. TID issues for optocouplers are well known

and usually serve as the basis for parts procurement

decisions. Optocoupler TID test data typically utilizes Co-60

sources (ionizing radiation). However, in some cases proton

damage testing, which acts as a combination of TID and DD,.

has been used in place of Co-60. The parameter mostsensitive to TID is usually the CTR. When significant

degradation in CTR occurs, mitigation measures can beadded to some applications by derating the part sufficiently

to cover the expected loss during mission lifetime [2].

11I.TEST FACILITIES

Table 1 shows the test facilities utilized in testing parts by

the organizations contributing to this compendium. Proton

testing was conducted at the Harvard Cyclotron Facility

(HCL), the Indiana University Cyclotron Facility (IUCF), the

Loma Linda University Medical Center (LLUMC), the TRI-

University Meson Facility (TRIUMF), University ofCalifornia at Davis, Crocker Nuclear Laboratories

(UCD/CNL), and Lawrence Berkley Laboratories (LBL).

Heavy ion testing was conducted at LBL, BrookhavenNational Laboratories (BNL) and Michigan State University

National Superconducting Cyclotron Laboratory

(MSU/NSCL). Neutron testing was performed at the Sandia

National Laboratory Pulse Reactor Facility (SPR). TID

testing was performed at Sandia National Laboratory

Radiation Hardness Assurance Department (SNL/RHA).

TABLE 1: TEST FACILITIES AND PARTICLES

Facility Particle Particle Energies Used

HCL Proton 73- 149MeV

IUCF Proton 54- 197MeV

LLUMC Proton 51MeV

TRIUMF Proton 50 - 500MeV

UCD/CNL Proton 26.6 - 63M©V

LBL ProtoWHe 35 - 55MeV p+, 48MeV He

57MeV Li-7, 110MeV C-12,

BNL Heavy Ion 150MeV F-19, 210MeV CI-35,227MeV Ti-48, 278MeV Ni-58

240MeV He-4, 720MeV C-12,

MSU/NSCL Heavy Ion 1200MeV Ne-20, 2160MeV At-36,5040MeV Kr-84, 7740MeV Xe-129

SPR Neutron TRIGA" Reactor, pulse spectrum

SNL./RHA Co-60 ¥ 1.17, 1.33MeV

"TRIGA = Training, Research, Isotopes, General Atomicsnuclear reactor.

IV. TEST METHODS

A number of organizations have tested optocouplers forvarious effects at several different test facilities. The

parameter of interest determines how the device is set up fortesting. All devices presented were tested at nominal room

temperature. Table 2 presents an overview of the test

methods used by each organization. All methods, results

and data use the following abbreviation conventions:

Iv = Forward current of LED

Ic = Output current of the photodiode

Vc_ = Voltage drop across the collector/emitter of the

photodiode

Vcc = Voltage drop across the load and LED

1% = Capacitive load applied as input feedback

RF, CF = Passive filter (resistor/capacitor combination) for

SET testing

Load = The resistive load applied to the photodiodeForward Load = The resistive load applied to the input to

vary IF for a constant VccCTR = IcJI F

CTRo = Initial CTR

Degradation of CTR = CTR/CTRo (Normalized)GSFC = NASA Goddard Space Flight Center

JPL = Jet Propulsion LaboratoriesLMSSC MSO = Lockheed Martin Space Systems Company,

Missiles and Space OperationNRL = Naval Research Laboratories

SNL = Sandia National Laboratories

Mfg = Manufacturertip = Hewlett Packard (now Agilen0

Mii = MicropacTI = Texas Instruments

LDC = Lot Date Code

A. Displacement Damage Testing

In displacement testing, CTR, is typically the parameter ofinterest. The device is generally set up as in Figure 2 below.

Testing is usually done in step irradiations either biased or

unbiased. Measurements are generally done after each step

centering on certain parameters (IF, VcE, Vcc, and Load),

with variations of holding a parameter constant while

sweeping another. Some measurements have been made in-

situ assuming that there is one bias condition during the

testing (no sweep). See Table 2 for test conditions arranged

by test organization.

R C

Vo

RL

Vce

m mmmm mmmm

Figure 2: Schematic of experimental setup to measure CTR

degradation [5].

B. SET Testing

SET testing is generally performed in a set up similar to that

in Figure 3. The bias condition should be such that the LEDis off. When the LED is biased on, SET sensitivity is

negligible [l]. Transients can be measured directly at the

output of the optocoupler, the output of a TTL device, orsome other filtering device.

w (+svdo

Figure 3: Schematic representation of a SET test circuit

showing the filter network and the two probe locations for

analog and digital transient capture [5].

C. Total Ionizing Dose Testing

The devices tested for TID by SNL presented here were

unbiased and irradiated with Co-60 gamma rays stepwise to

IMrad(Si). The parts were electrically tested between steps.

Table 2. Test Methods

Displacement Damage

Organization Input Vce Rc (Load)Aerospace Sweep If Constant VariableBall Aero Sweep If Constant Variable

Boeing Sweep If Constant ConstantOff Sweep Constant

GSFC Sweep If, Fixed Vcc Constant ConstantSweep If, Sweep Vcc Sweep Vadable

JPL Sweep If Constant ConstantLMSSC MSO Constant Constant Constant

NRL Sweep If Constant ConstantSRL Sweep If Sweep Constant

Note Parameters Measured ParticlesCTR Protons, HeliumCTR Protons

step irradiationstep irradiationstep irradiationstep irradiationin situ

step irradiationstep irradiationstep irradiationstep irradiationstep irradiationSET

CTR

Leakage

CTR, Switching, Leakage

CTR

_rotons

Protons, Neutrons,

Heavy IonsProtons

CTR ProtonsCTR ProtonsCTR Neutrons

Organization Note: Parameters Measured ParticlesGSFC SETJPLLMSSC MSONRL

The part should be biased in such a way that the diode is off. If SETthe diode is on, SET sensitivityis negligible. SET

SET

Protons, Heavy IonsProtonsr Heavy IonsProtonsProtons

Total Ionizing Dose

Organization Input Vce Rc (Load) Note Parameters MeasuredSNL Constant Sweep Constant step irradiation CTR

Particles

Co-60 Gamma Rays

V. SUMMARYOF TEST RESULTS

All tests were performed at nominal room temperature

unless otherwise noted. Table 3 summarizes the proton,

neutron and heavy ion DD results. For the Results/Notescolumn, the number given is fluence (particles/cm 2) of the

particle indicated. If the part degraded, the fluence given

represents the level where degradation started. If there was

no degradation, then the number given represents the end oftest fluence. Table 4 summarizes the proton and heavy ion

SET results. If the part had no SET, the number is the total

fluence given to the device. Table 5 summarizes the TID

results. The Note gives the onset of degradation; these parts

were tested to IMrad(Si).

Device4N244N494N49O1.F4004N49OMTI062

6609266O994N484N484N494N494N494N49

4N494N494NA_94N494N494N494N554N55611346N140

_140 (SeO_)

DIH126

FB00KBYHCPL-5231HCR.-5430HCPL-5431HCPL-5530HCPL-5531HCPL-5630HC;PL-5701HCPt.-5730OU-I149O1.H249OLH304O1.H349OU'I400

660886608866O99661233C91C4N484N48

4N494N496N1346Nt40HCPL-6651

HSSR-7110OLH400OLST00

P2824

4N494N494N49SN134SN140HCPL-5230OLHI049OLH1049.OD02OLH I049.00034N354N49

4N49

TITITIIsolirlkMil

MIIMI|MI|MllTIMi|MilT_MIIMi|

Mt|MllMitMI|HPMiiMiiHPMII

Te_HPHPHPHPHPHPHPHPI_llnk

IsoIInkIlolJrlkIsolll_IsolinkMII

MllMitMIIMitelMil

MII71liPMitHP

HPIsolink

Ilolink

HamamaWu

MW

TIPIPPiPPIP

c_c_kO_kMm

_J

SN140 MiHCPI.-2201 PiPHCPt.-2430 PIP

SlOa2-3oophofodk_euiS2017 G,$3040-3 LED Mil

DP224 LED

p_o_.n_or :)pWkMC099 Ui0_.MO0 Imoltnk

Table 3: Proton, Neutron and Heavy Ion Displacement Damage SummaryLDC Device Speed Test Or_mlzation Test Facility8850 _X)kl0pll AerosFmce LB.9408 4(X)klo_l AerosFmce LB.9408 e,0Okbl0e _erospece LB.9713 400kb_ Aerospmce 'LBL9518 400kl0pll Ball I,_NL

50kb_ Ball 'UCD4_NLUnknown 400kl:)pe Boe¢_ 'UCD/CNL

9_80 50kbpI Boeq_ UCD/CNL9560 ll00kl0_l Boetn_ UCD/CNL9618 400kl:_e Boe_nQ UCD/CNL8646 _00kb_s BoeklQ UCD/CNL9327 ll00kl0_l Boeir_ UCD/CNL9329 llOOkbpI Boeing UCD/CNL9439 400kb_l Boek_ UCD/CNL9_04 400kl_0e BoeinQ iUCD/CNL9511 400kblxl Boe_ UCD4CNL

_00kbfl_ Bo_nQ UCD/CNL9550 _00kl:_e Boe_ UCD/CNL_e_3 ,m0k_e. _ IUCO/CNC

9337 400kb_ Boelr_ JCD/CNL9623 400kb_l Boe_ JCD/CNL9645 IOMIo_I Boe_ iUCD/CNL

9711, t5, 16 400kbps Boe_ IUCD/CNL

9_3 _00kbps Boem_ !UCD/CNL

9521 N/A Boeln_ JCD/CNL

9531 N/A Boelr_ JCD/CNL9632, 9633 2M10_l BoelnQ JCD/CNL

9644 llOMbf_ Boeir_ JCD/CNL9618 40MI0_s Boein_ JCD/CNL9642 _00kl0pl Boeing

9632 m9633 400kbl_ BoelnQ _CD/CNL9716 10Mbps Boe_ ICD/CNL9315 40Okbl_ Boew_ JCOICNL9701 4001d_pI BoelnQ JCO/CNL

Unkr1_,m llOOkb_l BoelnQ JCD/CNLUnknown llOOkbl_ Boelr_ JCD/CNLUnknown IMbpe Boeir_ JCD/CNLUr,kno_ IM_I_ .oe.@ luc_,c_Unknovm 400kb_ Boe._l !UC_L

S25kb_ GSFC IUCO/CNLU_ S25kbps GS_C _UCD/CNLUnknown 50kb_ GSFC !TRIUMFUflknov41 10Ml0pl GSFC !TRIUMFUnknovm 20Okbps GSFC UCD/CNLUn_novm _00kl0_ GSFC SPRUnknown 400kl:_s GSFC UCD/CNLUnkno_q 400kl_s GSFC )TRIUMFUnknovat 400kl0ps GSFC IUCD/CNLUnknown t0Mb_ GSFC !SPRUnkno_m _00kbl_ GSFC 'TRIUMFUnknown 10Mb_l GSFC 'TRIUMF

9637 N/A GSFC UCDK_NL

Unknovel 400kl_ GSFC _CDICNLUnknown tMbl_ GSFC L)CD/CNL

rRIUMF, LLUMC,Unknovm 333kbps GSFC IUCF, SPR

Unknown ll00kbps JPL IUCFU_ 400kbf_ JPL IUCFUnknown 400kb_l JR. IUCFUnknown lOMbp_ JPL; IUCFmUCDiCNLUnknown 400kbps JR. IUCFUr,kno_ 2MIope JPL LICD/CNL

_1 Procem Unknown JPL L_CD/CNLSpecial Procem Unknown JPL ICD/CNLSw.lal Process Unknown JPL K_L]R._NL

UNmovm 400Kolx_ LMSSC MSO IUCFCEJG Mg628 llOOkb_ LMSSC MSO IUCF

88092-101S

q_c,-_pmce_

8302401 EC31757953896309827

C._AIAs IR,

T I_;iconnknovm9841

QCPt.-5729 PIP Unknown

OLH249 Isofink 400kbps;4N49 Mil 400KIo1_

EnerBy/PartKlu U_d Re_45MeV Pmton_ 48MeV He CTR Degradatlon It 5.8EI0 p, 5.2E8 He35_55MeV Protons CTR D_datlo_ It 4.8E9 35MeV_ 6.8EI0 55MeV55MeV Profonst 48MeV He CTR De_adatlon It 6.8EI0 p% 5.2E8 He55MeV Protonl No CTR de_ladatton at 8.1E1163MeV Protons CTR De_n_datlml It 4.5E10

63MeV Profom CTR De_mdatton at 4.5E1063MeV _ No CTR degradation It 3EI063MeV Profom Some CTR de_admk_ at 3E1063MeV Profons De_ldatton of CTR at 1E1063MeV Profon_ De_nldatlon of CTR at 1E1063MeV Proton_ De_tad_on of CTR at 1E1063MeV Pr_om D_Faddon of CTR at IE1063MeV Profonl _ of CTR at 1E10_63MeV Protons _ of CTR at 3E10_31deV Protonl _ of CTR at 1E1063MeV Protons _ of CTR at 3E1063MeV Profor_ Oe_radl_n of CTR at 1E1063MeV _ _ of CTR at 1El0_3MeV Protom De_r_:b_)n of CTR at IE10_3MeV Pro(ore O_radMIon of CTR at tE10S3MeV Protons No CTR degnKIm_m to 3E10S3MeV Profonl Some CTR dl_radatlon at 3E10_3MeV Protonl No Pamme_'lc dl_on at 3E10

63MeV Profon_ No CTR ¢lel_Klation at 3EI0163MeV Profor_ De_iddon of CTR at 31El0

De_ of l_ay (P_t is a Power MC_P_ mP'V

63MeV _ Rela_t at g£9DegnKMtion of RMay (Part la a Power MOSFET PV

63MeV Profon_ Relay) at gEg

:63MeV Protonl No P_mme_'l¢ cla_mcMtJonat 3EI0i63MeV Protons No Pammeqlc ¢le_mdatlo_ at 3E10S3MeV Protonl No Pamme'_c d_FadaUon at 3E10

63MeV Pro(on_ No CTR de_Fad_tlon at 3E1063MeV Pro/_onl No CTR de_Klatlon at 3E10_3MeV Protons No Pamme_'l¢ cle_'_la_c_ at 3E10

63MeV Protonl Some CTR de_radatlon at 31EI0163MeV Protonl NO CTR de_Fadatlon at 3EI0

63MeV Pmtom No CTR _ It 3E1063MeV Protons No CTR degradation at 3EI063MeV Protorm No CTR de_adatlon at 3E10:63MeV Protons No CTR degradation at 3EI0S3MeV Prot_ons No CTR de_p'adatlon at 3E10

!63MeV Protorm No CTR de_Fadatlon to leg63MeV Protons Oegrada_on of CTR at 2E10:58MeV Protofll No CTR de_adatlon to 2E10!58MeV Proton_ No Paramatrlc de_Ida_n to 2E1063r 31_ 21_ 14MeV Protons DeiFada_>n of CTR at <IEI0 for allenergkmNeutrons De_ldation of CTR at 2Ell63MeV Protom Degrada_on of CTR It 2E10158MeV Pro(orB No CTR deiFacNtlon to 2EI0

De_mddon of CTR at 2E10!63MeV Protor_

:Neutmm

63r 58MeV Pr0torm!Vadous Protons

63MeV Profons53MeV Proton_53MeV Protons

VKtous Pmtom, Ne_rom

192MeV Protons192MeV Protons192MeV

192r 50MeV Pro_on_192MeV Pfotom50MeV Profo_50MeV Profm_50MeV Profom50MeV Proton=192MeV Protons192MeV Pmtonl

t92MeV

Ig2MeV Protons192MeV

192MeV Pmtonl?3MeV Pmtor413MeV Profom

No Pammeqto deilmddo_ to 8Ell IMeV equlv.No CTR deiFadmt_on to 2E10No Pammatrlc de_adatlon at 2E10 58MeV

Leakage and OnK)ff Time degrad_k_ at 2.3E 11

Part _ • Pow_ MO_FET)D_nldatk)n of CTR at 4E11De_n_lat_on of CTR -t 3.8Ell

Degradd_n of CTR at 2E10 (TRIUMF 58MeV i_-),1.7E10 (LLUMC 52MeV p+), 2.5E10 (IUCF 195MeV_), 5.4E10 (SPR IMeV equiv. Neutrons)

_im=_ ofcm[_radatk)n of CTR at 5E10_n_da_,onofCTRD_¢ad_t_on of CTRD_rad_tkm of CTRD_nmatk_ of CllR_ellr=dden of CTR at _E_0De_rad_<m of C'lqRat IE10

De_Fada_on of CTR at IE10_e_rada_on ¢4 CTR at 5EllDe_rada_m of CTR at 1Et I

llO0kb_ LMSSC M.SO IUCF De_radatlon of CIR at 4E11

De,_n|datk_n of CTR at 1EllMo C1_ de_rad_k)n at 6_ 11P4OCTR de_radatton at 6E 1tlout del|n_datlon at 2E 10If d_radation at 2E 10

LMSSC MSO IUCF20Mbpe .MSSC MSO IUCF5MInos LMSSC MSO IUCF500Hz Operation !LMSSC MSO

500Hz OpItatlo. LMSSC MSO

3Hz Opemtk_ .MSSC MSO_Hz Operation LM SSC MSO PK;L

NRL _C;D/CNLNRL _'CD/CNL

400kb_ NRL _L

400kb_ SNL SPR400kb_ SNL

73MeV Protonl73MeV ProtomS3MeV Profom_MeV Protom_3MeV Protom

Metf_or_Neu_or_

If ¢lle_radm_onat 2E 10

lout de_adatlon at 2E10De_rada1|<mof CTR at 3.8E I0De_n_Ikm of CTR at 1.5E11

De_radatlon of CTR at 3_8EI0De_r&da'do_of CTR It IE12Del_radatio_ of CTR at 1E12

Table 4: Proton and Heavy Ion SET Summary

Day ice

6609966123

661234N48

4N49

4N556N1366N140A

6N140

_-5401HCPL-5631

HCPL-6651DLH249

OLH5601

Ufg

Optek

PIP

tiP

mMHPHI=

PIP

+solil_

P2824

6N134

BN134

SN140

4N354N49

4N49

SN140

HCPL-2201

!l,.lamsm_su

PIP

mii

liP

Device Speed Test Org.50kbps GSFC

10Mbps GSFC

lOMbps GSFC400kbps GSFC

LDC

UnknownUnknown

Unknown

9644

9628 + SpecialProcess

97O2

96249707

Unknown

9642

9427, 9707

Unknovm

UnknownUnknovmUnknovm

Unknmm

Unknmm

Unknovm

UnknownCEJG M9628

66092-101S

special process8836

8302401EC

317579538

400kbps GSFC

400kbps GSFC400kbps GSFC400kbps GSFC

400kbps GSFC40Mbps GSFC/Ball10Mbpls GSFC/Ball

HCPL-2430

51082-300 pholodiode

DP604 pholot ransistorQCPL-6637

10Mbp; GSFC

400kbps GSFC10Mbps GSFC

333kbps GSFC

400kb_ JPL

4_kb_ Jl:q.

4_kb_ JPL

4_ kb_ _CMSO4_ kb_ LMSSC MSO

T==Fsd,VTRIUMFTRIUMF

TRIUMFUCO/CNL

TRlUMF

UCO/CNLUCD/CNL

UCD/CNLTRlUMFUCD/CNL

UCD/CNL

UCD/CNL.TRIUMFMSU/NSCL

MSU/NSCLTRlUMF

BNL, IUCF,UCD/GNL

BNL, IUCF,UCD/GNL

BNL,UCO/CNL

IUCFIUCF

_lii 400 kbps LMSSC MSO IUCF

Mi 400 kbps U¢_SC MSO IUCF

!liP 20 Mbps LMSSC MSO IUCFHP 9630 5 MIops LMSSC MSO IUCF

Mi 9827 500Hz Operation LMSSC MSO HCL

Oplek Unknown 3Hz Operation LMSSC MSO HCLHP 9611 1CMbps NRL UCO/CNL

Energy/Particles Used l+_mults/Notes58MeV Protons No SETto 2E10

58MeV Protons SETs observed68-225MeV Protons SETs observed

38,2MeV Protons NO SET to 1E9

S3158MeV Protons No SETto 2E10i38.2MeV Protons No SETto IE9

38.2MeV Protons NO SET to 1E938.2MeV Protons NO SET to 1E9

831 58MeV Protons SETs observed38.2MeV Protons SETs observed38.2MeV Protons SETs observed

Various Protons SETs observed

Various Heavy Ions SETs obse_edVarious Heavy Ions58MeV protons NO SETto 2E10

Various Heavy l,om;,192, 50MeV Protons SETs observed

Various Heavy Io¢_,

192 r 501VleV Protons SETs observed

SETs observed

Various Heavy Ion=,50MeV Proton=

44 to 192MeV Protons

NO SETsw#h IXldons, SETsobsegved w#h heavy

NO SET to 5Ell!44 to 192MeV Protons NO SET to 4E 11

44 to 192MeV Protons NO SET to 4Ell

44 to 192MeV Protons NO SET to 8E 11

44 to 192MeV Protons SETs obser4ed44 to 192MeV Protons SETs observed

73_ 145MeV Protons SETs obse_ed75, 145MeV Protons SETs observed63MeV Protons SETs observed

Table 5: Total Ionizing Dose Summary

Device lMfg I LDC Device SpeedlTest Org. ITem Fadlity Particles Used

OLH24Spso,_ I U_no.. 4o0k_ is_ lS,n_,RHA Co-60 gammas

4N49 JMii l Unknown 400kbps ]SNL ISandia RHA Co-60 gammasResults/Notes IDegradation of CTR at 100kradsDegradation of CTR at 100krads

_. TESTDATA

A. Proton, Neutron and Heavy Ion Displacement Damage

Effects [

1) The Aerospace Corporation ] °`

a. 4N24 (TI)!

!

The 4N24 was tested biased with 45MeV protons and "1

48MeV Helium ions at LBL. Test parameters were set at Iv t= 5mA, Vcc = 1.5V, VcE = 8V. Iv was swept for CTR °'

measurements. CTR degradation was noted in both cases.o

See Figures 4 and 5.

iz ....................................................................... ...............................................................................

o io =o 1o 4o io io Jo =o

Figure 4: 45MeVProton Induced CTR D¢_'a_lation Measurcmonts for TI4N24.

6

x.

4 • | IO 17 _

Figure 5: 48MeV He InducedCTR DegradationMeasurementsforTI 4N24.

b. 4N49 (TI) Multiple TestsFour 4N49s were tested biased, two each with 35 and

55MeV protons at LBL. Test parameters were set at Vcc =

5V, VcE = 5V, series resistors were chosen to set IF to l, 2, 5,

and 10mA. IF was swept for CTR measurements. CTR

degradation was noted in all cases, see Figures 6-9.io .........................................................................................................................................................

\'.

• ...................................................... lk .......................... dl

ab-._ ......... t .......................... • .......................... _ ......... •

i :e _ • inip la,,_ ill

Figure 6: 35MeV Proton InducedCTR DegradationMeasurementsfor T14N49 (SN2).

L ; --÷.

[+ R_ if .A +Ii_* ._.A +II_ .5.A +lqml -_o.A ]

Figure7: 35MeV ProtonInducedCTR DegradationMeasurementsfor T14N49 (SN3).

:_ 4o ,o eo _ i_o 14o

Figure8:55MeV ProtonInducedCTR DegradationMeasurementsforTI4N49 (SN I ).

[._,,,_°_.A ..4t-,_l,.,a.^ ____,,,,,-t.^ _,l,,l ._o.A j

Figure 9: 55MeV ProtonInduced CTR Degradation Measurementsfor T14N49 (SN4).

The 4N49 was tested biased with 55MeV protons and

48MeV Helium ions at LBL. Test parameters were set at Iv =

2mA, Vcc = 5V, Vc_ = 5V. Iv was swept for CTR

measurements. CTR degradation was noted in both cases.

See Figures 10 and 11.

io. ,..

Figure 10: 55MeV Proton InducedCTR Degradation Measurementsfor TI4N49.

Figure 11: 4gMeV Helium Induced CTR Degradation Measurements for TI4N49.

c. OLF400 (Isolink)

The OLF400 was tested with 55MeV protons at LBL. Test

parameters were set at Vcc = 5V, VcE = 5V, the output

resistance was 300£/. The input resistance was varied (R_ =

8k.Q, 10k.O, 16k.Q, 20k_, 30k_, and 40k.O) to give Iv =0.429mA, 0.344mA, 0.216mA, 0.173mA, 0.166mA, and

0.087mA respectively. Output current was measured at each

step with each of the resistors. The results show a decrease

in output current with increasing proton dose, hence CTR

degradation. Results axe presented in Figure 12.Ii

Is

14

i

ie( j "._,- -

S;/" ,.,.:;....I/ , ,.D-_'"

i._J-OO6 O1 OrS Ol O_ 03 Oar 04 a_

trev¢ CvmmtIr iv AI

I_P,e.ran ._.2Okn_ _fles .-x.-aokfaos .i.-eOlaaa_ -*--too_aas --.--170krsas}

Figure 12: 55MeV Proton Induced CTR Degradation in Isolink OLF400.

2) Bali Aerospace NASA/JPLa. 4N49 (Mii)

The 4N49 was tested with 63MeV protons at UCD/CNL.

The ten samples were divided into two groups. Five were

irradiated with the LED off (Iv = 0mA, V_ = 5V) and the

other group was irradiated with the LED on (Iv = 5mA, V_

= 28V). The parts were tested after each step irradiation. In

both groups, the input resistance was varied to produce Iv --

1, 3, 5, and 8mA. These bias conditions are representative

of the proposed space application. For proton fluences lessthan 1El1 p/cm 2, there is only a slight difference in the

radiation response between the two 4N49 groups. However,at the highest proton fluence tested (4.2Ell p/cm2), the

normalized CTR for the group irradiated with the LED off is

roughly half of the normalized CTR for the group irradiated

with the LED on. Figures 13 and 14 present the mean

normalized CTR versus proton fluence for the two groups

tested 161.

I m _..,.

0.01

_[f- I i Oil

-_ 11"_ 311Ai

--*--lf=3iiAi

0.001 '-- lf=li I_l

1.00_+10

i ! 'i!i l• I

i iI

I ', I

ii,!li

1.0_l_+ 11 1.0¢1_+ I 2

63 MI_V Proton Fllill_ (p/era l)

Figure 13: Mieropae 4N49 Me,an Normaliz_ CTR vs. Proton Fluene¢

(Bias Conditions during Irradiation: If= 0 mA, Vce = 5V.)

1.001_+12

Figure 14: Micropa.c 4N49 Mean Normalized CTR vs. Proton Fluence

(Bias Conditions during Irradiation: If = 5 mA, Vce = 2gv.)

b. OMTI062 (Optek)The OMTI062 slotted optical switch was tested with 63MeV

protons at UCD/CNL. Six samples were irradiated with the

LED biased on (IF = 15mA, VcE = 5V) which reflects its

application. The parts were tested after each step irradiation.

In both groups, the input resistance was varied to produce IF

= 5, 10, 15, and 20mA. The mean, normalized CI_ is

plotted versus proton fluence in Figure 15. Other test

samples from this date code were previously evaluated for

TID from gamma rays and those test results for lr = 10mAhave been included. Note that 7.4E9 p/cm _ (63MeV

protons) imparts a total ionizing dose of _l.0krad(Si). Thisdata suggests that ionizing dose damage contributes about

2% of the combined ionizing dose and displacement damage

(at 2.2E1 lp/cm2) [61.

0+1

Z o+ol

i

-. <.

, !

l

x

_lf=lOmA

-I-*--If- ]_ mA

-1+If- 20mA

O+OOI / _Om Tmtr IPlOm'*'

LOCI_+IO

.+!! E

:Iii !-..!i i ".'.N ;

", Ix"

I! \J"

IZ r.

I .OOE+I 1

!11111l lllll

iiiii! !::::++Ill:

:III

iiiii: : !!!

I+_IE+I2

63 MeV Proton Fluonce (p/cm 2)

Figure 15:Optek OMTI062 MeanNom!alized CTR vs. ProtonFluence(BiasConditionsduringIrradiation:If= 15mA,Vce = 10V.)

3) Boeinga. 66092 (Mii)

The 66092 was tested with 63MeV protons at UCD/CNL.

Vcc and VcE were held constant while I¢ was measured for IF

= 0.1, 0.2, 0.5, 1.0, 2.0, and 5.0mA. There was no

significant change in CTR to a fluence of 3El0 p/cm 2.

b. 66099 (Mii)The 66099 was tested with 63MeV protons at UCD/CNL.

Vcc and VcE were held constant while Ic was measured for IF

= 0.1, 0.2, 0.5, 1.0, 2.0, and 5.0mA. There was no

significant change in CTR to a fluence of 3El0 p/cm 2.

c. 4N48 (Mii) Multiple TestsThe 4N48 was tested with 63MeV protons at UCD/CNL.

Vcc and VCE were held constant while Ic was measured for Ir

= 0.1, 0.2, 0.5, 1.0, 2.0, and 5.0mA. There was some

degradation in CTIL see Figure 16.

41_gl Mel CTR

! ! ! !!!! il--ua

+; iiiii Lt--,_. . [I -sam

...... _ It...

....... i"rtP1,. .... _4,4 W __.. _.....I I I _ .%.

, ....... .... ] i iii++ .... + ++_+++ • + ++iIt i +ill,, -" "'] 'i-LJ ][" ".• ....... +I.,+ ++++

' _ ::::: i"-i..i.jiii -. ....: : ::ill : : : :.t-!.!+ ' : : ::

"..,: I I I ::: : : : :::: . : : : :

• . . ...

ILl

,_+, z+, _ rb..,,. V_ ll,ll LIE+If

Figure 16: 4N4g ProtonInducedCTR Degradation.

The 4N48 was tested with 63MeV protons at UCD/CNL.

Vcc and VcE were held constant at 5V while 1c was

measured for Iv = 0.5, 1.0, 2.0, 5.0 and 10mA. There was

some degradation in CTR, see Figure 17.

• tz

I I1 t

g. -Ssi I I

Vm IdmlliI

- - - SB.-,_

-- |.S.aA

--slmm

i i .....

• I+1,141

m,,,m _m,,l,'m 5

Figure 17:4N4g I_ Induced erR Degradation.

-= i i:iii," - -'_-_ _. ill

- ttlFq 4-LIlt - -.... \,,_• _ Nd

I ; ;ii.: - _ t _l

i iiiii! . g I Iti i!!!!! -_ I II....... "I II........ !rl

lll÷U

d. 4N49 Multiple Tests, Multiple VendorsThe TI 4N49 (LDC8646) was tested with 63MeV protons at

UCD/CNL 1c was mea_ed at Vc_ = 0.5V, 5.0V and 9.5Vfor IF = 0.2, 0.5, 1.0, 2.0, 5.0, 10, and 20mA at each VCE.

There was a similar amount of degradation in CTR for all

three cases, see Figure 18 (V_ = 5V).

TI _ CYrR I_Fmmka

iu

............. £---.-.-_...... .-,:. f-.---.-.- ]

......... ____ --_

--., ____

u , •i.ll.,l ii_.,i lie le IJl..lle aal+lll _ • fall le _ ne

Figure lg: 4N49 (Mii LDC$64_) ProtonInducedCTR Degradation.

The Mii 4N49 (LDC9327) was tested with 63MeV protons at

UCD/CNL. Ic was measured at Vc_ = 5V for IF = 0.5, 1.0,

2.0, 5.0 and 10mA. There was some degradation in CTR,

i

I

Figure19:4N49 (Mii LDC9327) Proton InducedCTR Degradation.

iii :_: i !!ii 1 --- i,,I::: i i i

• %. i+[+::" --_ : r i ;,,iIt: ,- t • ,-+ I

l[ii t ] i + IIII i + L i: : : !

II

see Figure 19.lea

1 i

I

.... _- ...... u.

i

-- i "--S.I_ I

: i

%.



0.5, 1.0, 2.0, and 5.0mA. There was some degradation in

CTR, see Figure 20.

I

I

i

o1 ......................... ,........i E,.ou IJE_

"..\

IE*IO

immm P,m,mm_Ii_ _ "JI

Figure 20:4N49 (Mii LDC9329) Proton Induced CTR Degradation.

111+iJ]:

Illi

II,iI1' i

Ill iitl:ifli

1......JIE+II

The TRW 4N49 (LDC9439) was tested with 63MeV protons

at UCD/CNL. Ic was measured at VcE = 5V for Ir = 0.5, 1.0,

2.0, 5.0 and 10mA. There was some degradation in CTIL

see Figure 21.lae

t_

4---_ +_

°+lm+.lI

..... i y'-+_ll",-,_ I I I I i

'" '-'I F ?++lJ _" I- - 11111kkllll"-.. .11111

I1[11"1--. -' 1." 'IIIII

i i i ill

iiiil _ I II11III [ Illil "4 IlII

I Illrl Illll

l iilll illil

........ i

_ iiE+m tl_u

Figure 21:4N49 (TRW LDC9439) Proton Induced CTR Degradation.

c tmit

The Mii 4N49 (LDC9504) was tested with 63MeV protons atUCD/CNL. Ic was measuredat VcE= 5V for IF = 0.5, 1.0,


see Figure 22.

_i iiii ......! ! !!!! : ::::: : :;:: : ::::

J _ i ilia

.......... _..I.|JJJ. --_- _ .............. l lili _ ____v ._ttv , , .............. + +++++.... "-+++-tn "-. _- "__ IIII

'.... " ...... iiiii i-, ._- iii+_I- •. i._..3 i " I I 111 II'11.... J Illii ...... ,'_t'

,........._ "II ",l: IIIII ..... ',.lilll "11 II

: _ :::: ....

! .... Illlli1[ io ii[_*li

Isai r,am_ ( _


The Mii 4N49 (LDC9511) was tested with 63MeV protons atUCD/CNL. Ic was measured at VcE = 5V for IF = 0.5, 1.0,


see Figure 23.

m_

v..sv

I,m be_ml

r u, [

-r I -i -I-14 ..... 4 - - -i-. _

q- --I- 4 -I-L LL ..... 4 .... _.

U:..)

t',,,m re,i, (i,,m_

i I i

-o

-'I [",1 I

r 111

Figure 23:4N49 (Mii LDC951 I) Proton Induced CTR Degradatio_

The Mii 4N49 (LDC9529) was tested with 63MeV protons atUCD/CNL. Ic was measured at Vc_ = 0.5V, 5.0V and 9.5V

for Iv = 0.2, 0.5, 1.0, 2.0, 5.0, 10, and 20mA at each Vc_.

There was a similar amount of degradation in CTR for all

three cases, see Figure 24 (Vc_ = 5V).

_cra_qr_

lu

_ ="-_,-._... _.... ._..-_. ......•---::--:---_- _ .--.-.-._-.,*-.._0.._=_--____._ ""-........ _......... __

Figure 24:4N49 (Mii LI_9529) Proton Induced CTR Degn_t-ti_rL




CTR, see Figure 25.+o ......................... .............................. ,...,..,..,.

-ZTI 7:?" =t1-1-1:

...........................i+Hi.

\\

°+ e+ol s E,OI +lm*lO

Itmmm lqm_ ll_Iml)

[+OIIW++ -+.02m_+ : 0+_,'._ ..:+..Iml.._.+_,r,_ .+-.SmtJ


............. +

II

The Mii 4N49 (LDC9623) was tested with 63MeV protons atUCD/CNL. Ic was measured at Vc_ = 5V for IF = 0.1, 0.2,

0.5, 1.0, 2.0, 5.0, 10 and 20mA. There was some

degradation in CTR, see Figure 26.

10

Ola_eoa_r C'm I_lr ac_tlm

_a Y. -Jr

--sV IJDE4

--- SY2JI4

..... sVSml4

-ii i.... s v liE4

. • +

Figure 26:4N49 (Mii L1_29623) l%'_on Induced CTR Degradation.

"" -________.,_

The Mii 4N49 (LDC9648) was tested with 63MeV protons atUCD/CNL. Ic was measured at VcE = 5V for IF = 0.1, 0.2,


CTIL see Figure 27.

HIH..................'"'...... H.I.I.

IE*g IE*IO

F_Dtel Fk, m** llmml_

1+o Tr_ -+--o_ OSm* ..+,. IOr_ +,t.,3_ ,*--SOm_ I


]E+I

..................................IfIE*II

e. 4N55 Multiple Tests Multiple Vendors

The HP 4N55 was tested with 63MeV protons at UCD/CNL.

Ic was measured at VcE = 0.4V at Vcc = 5V and 10V for IF =

0.2, 0.5, 1.0, 2.0, 5.0, 10, and 20mA. There was no CTR

degradation in either Vcc condition to 3E 10p/cm 2.

The Mii 4N55 was tested with 63MeV protons at UCD/CNL.Ic was measured at VcE = 0.4V at Vcc = 5V for IF = 5.0, 10,

and 20mA. There was no CTR degradation to 3El0p/cm 2.

f. 6N134 (Mii)

The 6N134 was tested with 63MeV protons at UCD/CNL. Ic

was measured at V_ = 0.6V at Vcc = 5.5V for a continuous

IF sweep from 0 to 10mA. There was no parametric

degradation to 3E10p/cm 2.

g. 6N140 (HP) LDCs 9711, 9715, 9716

The 6N140 was tested with 63MeV protons at UCD/CNL. Icwas measured at VcE = 5V at Vcc = 5V for a continuous IF

sweep from 0 to l mA. There was no CTR degradation to

3E10p/cm 2.

h. 6N140 (Mii) (66058 type)

The 6N140 was tested with 63MeV protons at UCD/CNL. Ic

was measured at Vc_ -- 0.4V at Vcc = 4.5V for a continuous

IF sweep from 0.1 to 10mA. There was some CTR

degradation, see Figure 28.

VII 4 SV, V.mO4V

II1+1

era. m,,.m W_._ I'_ -4---T__CT!

CT1 _i - °

: .... bk*._CTU qlm_ ',

** _ CTU llm_

** -- --m,.m_CT_ OU"*

Pr

i t' ;'" : : : : : :

, /,.i i i iii ] I: ' .......

ti ; : : : ::::

,'i/ i i i i!!!ii1

_r(l)

tll.l ml-l

Figure2g: 6N140 (Mii LDC9623) ProtonInducedCTR Degradation.

i. DIHI26 (Dionics)

The DIHI26 PV Relay was tested with 63MeV protons at

UCD/CNL. There was relay degradation in both the forward

and reverse directions and for VD = 5V and 100V. The

results for VD are very similar to those seen for direction in

Figure 29.

mru_ _v _ n,_a,_am

• 16 ell"--'ll<-I

- -- - tc_

..... If**

Ill ,, .... ll+l 01_

mv*+m*(w¢ +J+*

.... t

I 1:" // /

• (A)

Figure 29:DIHi26 Proton Induced Forward/Reverse Relay Degradation.

j. FB00KBY (Teledyne)

The FB00KBY PV Relay was tested with 63MeV protons at

UCD/CNL. There was relay degradation in both the forwardand reverse directions and for VD = 5V and 100V. The

results for VD are very similar to those seen for direction in

Figure 30.

_vPv__

Itwlme !_

--- ic.s

zll• __ o

; t" / ,--_+,

/ .....; ; ...... I<_

; / .... m+,z

+Z

/ ._ t //

; ____ .J

/

113

101

u_

Lm

l_mq_rd Dirom. i 41':*

I

.[ ............. _

ul.e IlL* U_-_ IX,I law _._ _._ _ _ • _IU _t,I _lt_

IIr (A)

Figure 30: FB00KBY Proton Induced Forward/Reverse Relay Degradation.

11

k. HCPL-5231 (HP)

The HCPL-5231 was tested with 63MeV protons at

UCD/CNL. There was leakage degradation at room

temperature and at 125°C. The bias conditions were IF =8mA and Vcc = 4.5V. See Figure 31. There was no

significant change in output voltage for Vcc = 5V or 15Vand Iv = 7 to 8mA to a fluence of 3El0p/cm 2.

_t.S2._l U'd=le

tLi

ml_t

-t- |2g, c- o .... _. ..... e- .............

vo qN)

Figure 31:HCPL-5231 Proton Induced Leakage Degradation.

1. HCPL-5430 and HCPL-5431 (HP)The HCPL-5430 and HCPL-5431 were tested with 63MeV

protons at UCD/CNL. There was no parametric degradationfor a bias condition of Vcc = 5V and IF = 0 to 7mA for both

parts to a fluence of 3El0p/cm 2.

m. HCPL-5530 and HCPL-5531 (HP)The HCPL-5530 and HCPL-5531 were tested with 63MeV

protons at UCD/CNL There was no degradation of CTR for

these parts with Vc_ = 0.4V, Iv = 0.1 to 10mA to a fluenc¢ of

3El0p/cm 2.

n. HCPL-5630 (HP)


UCD/CNL. There was no parametric degradation for this

part with VcE = 0.6V, Vcc = 5.5V and IF = 0 to 10mA to afluence of 3El0p/cm 2.

o. HCPL-5701 (HP)


UCD/CNL. There was very little CTR degradation for this

part with Vc_ = 0.4V, Vcc = 5V or 10V, IF = 0.5, 1, 2, 5, and10mA to a fluence of 3E10p/cm 2. Data was obtained at both

room temperature and 125°C. See Figures 32 and 33.

HIL'I_- f)'tl _ _i

mt)cJ....._¢.a

-m.J

. •. mJ

!_:._.-.;-::_;--.::;:;...=-----...-_:;-;..-;;;..2....._..........._.-......7.::

........................... o ......m-J

, , , .m*G m** *m • lat m tat m m to wi t* tin*01

I_da Irlua_l 0t/_t}

Figure 32:HCPL-5701 Proton Induced CTR Degradation at Room

Temperature and 1250C for Vec = 5V.

tlO_el ¢YI'R Degr adat_

v* - a_v, ¢,.b"lO

........................ I.-.Inom.

_--H__H _.......................... .'....--......... ..........

I1!

°*_

...... I ........ I........ F....... 4........ I........ --"_.... Ilal

.......................................................

+ * * ,m_* m** m m m: _ :mlS_ m • m t, re,t,

Figure 33: HCPL-5701 Proton Induced CTR Degradation at Room

Ton_erature and 125°C for Vee = 10V.

p. HCPL-5730 (HP)


UCD/CNL. There was no CTR degradation for this partwith Vc_ = 0.4V, Vcc = 5V, Iv = 0.5, 1, 2, 5, and 10mA to a

fluence of 3El0p/cm 2. Data was obtained at both room

temperature and 125°C. See Figure 34.

I-ICl'_ gl_l CTR D_rldlli_

Figure 34:HCPL-5730 Pr_t_ Induced CTR Degn_lation.

--lat.I

11 I

--lat.I

-- o _.tl

...... lat.l

.... i.l!

.... _at.i

q. OLHI49, OLH249, OLH304, and OLH349 (Isolink)

These Isolink parts were tested with 63MeV protons at

UCD/CNL. There was no significant degradation in CTR

for any of the parts tested. The bias conditions were Vcc =

5V and Iv = 0.5, 1, 2, and 5mA. The parts were tested to afluence of 3E 10p/cm:.

r. OLH400 (Isolink)

The OLH400 was tested with 63MeV protons at UCD/CNL.

There was no CTR degradation for this part with IF = 1, 2, 5,

10, and 20mA to a fluence of 3El0p/cm 2. Data was obtained

at both room temperature and 125°C.

4) Goddard Space Flight Center, NASA

a. 66088 (Mii) Multiple Tests

The 66088 was tested at UCD/CNL with 63MeV protons.

CTR degradation measurements were taken for IF - 10, 15

and 20mA, Vcc = 5V. No degradation of CTR was observed

for the application tested [31.

12

The 66088 was tested at UCD/CNL with 63MeV protons. Iv

= 4.1, 10, 15.4, and 19.7mA with constant Vcc = 5V [7].

See Figure 35.

45

15

10

00.00E+00 2.00F+10 4.00E+10 6.001=+10 8.00E+10 1.0(_+11 1.20E+11

Dose Fluence (p/cm 2)

Figure 35:66088 Application Specific Proton Induced CTR Degradation.

b. 66099 (Mii) Multiple Tests

Validation of an optocoupler spaceflight experiment that is

to be flown on STRV-ld was done at TRIUMF using 58MeV

protons with a minimum fluence of 2xl0t°p/cm 2. Micropac's

66099 was tested and showed no CTR degradation [3].

The 66099 was tested with 63MeV protons at UCD/CNL.

There was significant CTR degradation with IF = lmA and

5mA with a load of 0 or lk.Q, and Vc_ = 5V. See Figure 36.

1.0E+01

1.0E+O0

I¢_ 1.0E-01

1,0E-02

.............................................................................................................................. i

* Loed - 0 Ilohml; Ibl m_ J

_ D Lo_d = 11mNIrt¢IF= 1 mAA

:_ >: i_ ;" zxL_d=Olmhml;If=$m_g K X Lcmd- 1 kohm; Ir- S mA

zl

* ig

8

1.0E-0300£*00 50E.11 iOE*l_ 1_.12 20E.12 25£_12 30E.12 3_.12 4_.12 45E*1_ $0E.12

Proton Rw_c* (p/cm2)

Figure 36:66099 Proton Induced CTR Degradation.

dam. Significant part to part variability was also observed

(See Figure 38). Annealing measurements were not made

I71.1.2

--'- DUT _

1 "*" DUT #11h I -*- D.rr _3 ]

•*- t_Yr try0.0. KI,'-

_ 0.6

_ 0.4

O.2

O.E_O 2,E+10 4.E+10 6,E.10 &E÷IO 1.E÷tt 1.E+11

Proton Fluence (_cm a)

Figure37:63 and 31MeV ProtonInducedCTR Degradationin 3C91C.I ._te

Mitel 3C91C (device is made no coupling medium)

5mA drive Vce-5VI.OO

_k [ -0-#20 initial CTR=98 l

o,o0\\_ I -l-#29initialCTR=81 I

_ 0.60

U 0.40

0.20

O.OO ....

0.[+00 2.g+10 4.g+10 #.[+10 #.E+I0

FJuemce (32 MeV pro4tous/cm z)

Figure 38: Part to Part Variability in CTR Degradation in 3C91C.

l.g+ll

e. 4N48 Multiple Tests, Multiple Vendors

The Mii 4N48 was tested with neutrons at SPR. The average

CTR after each step irradiation is shown in Figure 5 for IF

varying from 1.65 to 6.2mA. Degradation occurred only at

the lowest drive currents for this application. All devices had

degraded to <1% CTR after an exposure with IMeVequivalent neutrons of 6x 10_2n/cm2 [3,101.

18

c. 66123 (Mii) "

Validation of an optocoupler spaceflight experiment that is ; ,,

to be flown on STRV-Id was done at TRIUMF using 58MeVprotons with a minimum fluence of 2xl01°p/cm 2. Micropac's _ '

66123 was tested and showed no parametric degradation [3]. _ ,,K

d. 3C91C (Mitel)Several 3C91C devices were tested at UCD/CNL with 63,

31, 21, and 14MeV protons. The Mitel 3C91C contains an

amphoterically doped LED. Figure 37 shows in situmeasurements made when irradiated with 63 and 31MeV

protons. The test parameters were IF = 5mA and Vce = 5V.Notice that 31MeV protons induce more degradation than

63MeV protons at an equivalent fluence. Results from the

21 and 14MeV protons are similar to that of the 31MeV

4 r Q

&

2

0 I

0.0Ee,Q0 2JE÷11

I o

)(

n c L

L &

i i i

4 JIE+ll lIJIl ÷11 |.SE*I 1 1,0E+12

Fleencs 4nsutronstcm a)

Figure 39:1 MeV Equivalent Neutron Irradiations of Mii 4N48 at SPR.

The Optek 4N48 was tested at UCD/CNL with 63MeV

protons. The Optek 4N48 contains an amphoterically doped

13

LED. Figure 6 gives in situ measurements of CTR. Iv varied

between 1.4 and 20.8mA with initial CTR peaking between

1.4 and 3mA. For this application, the collector current is

saturated for drive currents greater than 2.5mA. Operating adevice in this mode leads to a more radiation tolerant

application [7]. See Figure 40._U ..............................................................................................................................................

180 !

160

14ii -

120.

loo,:=80.

60-

40"

20-

It

,,

O

O.OE+O0 2.0E4 I0 4.(:_E+10 60E+tO 8.OE+lO 1.0E+11 12E+11

Proton Fluence (Plcm 2)

Figure 40: Oplee 4N4g Application S_ific Proton Induced CTR Degradation.

f. 4N49 Multiple Tests, Multiple Vendors

Validation of an optocoupler spaceflight experiment that isto be flown on STRV-Id was done at TRIUMF using 58MeV

protons with a minimum fluence of 2xl02p/cm 2. Micropac's

4N49 was tested and there was no CTR degradation [3].

The TI 4N49 was tested at UCD/CNL with 63MeV protons.

Figure 7 gives in situ measurements of CTR. IF was varied

between 1.2 and llmA and Vc_ = 6V [3].1

o.,11

o.I

0.7

e- u

0_I-- o4

tO o.s

02

0.1'

0o._._ 1_1 =_*_t _t 4_-_1 5_t e_.tl 7_-_11

Fluence (plcm 2 )Figure 41: T] 4N49 Pz_on Induced CTR Degradation,

g. 6N134 (HP)

The 6N134 was tested with neutrons at SPR. Eight devices

were tested to a 1MeV equivalent fluence of 8xl0Jln/cm 2. Iv

was varied from 4 to 26mA with Vcc = 5V. No parametric

degradation was observed [10].

h. 6N140 (Mii)

Validation of an optocoupler spaceflight experiment that isto be flown on STRV-ld was done at TRIUMF using 5gMeV

protons with a minimum fluence of 2xl01°p/cm2. Micropac's

6N140 was tested and there was no CTR degradation [3].

i. HCPL-6651 (HP)


to be flown on STRV-Id was done at TRIUMF using 58MeV

protons with a minimum fluence of 2xl0l°p/cm2. HP's

HCPL-6651 was tested and there was no parametric

degradation [3].

j. HSSR-7110 (HP)The HP HSSR-7110 Power MOSFET that contains an

optocoupler, was tested with 63MeV protons at UCD/CNL.

The test conditions were IF = 10mA, VoLrr = 28V, input

square wave of IHz to lkHz was applied. The parts wereirradiated to a total dose of 50krads and annealed for two

weeks. After 30krads, the part was well above the

specification of 250ttA for output leakage and by 50krads,

the part became unusable due to leakage of 150 to 300mA.

In spite of significant recovery after annealing, the parts

continued to exceed the leakage specification by a factor of

10. Additionally, the turn on/turn off times were above the

specification limit by a factor of 4 to 5 after annealing [11].

See Figures 42-44 for further details.

0

-2

-10

-12

I i I I I 4

1 5 10 2O 3O

KRADS(Si)

5OWeeks

Figure 42:HSSR-7110 Proton Induced Output Leakage Current Degradation.

1GO,

140 J

120 I

100

8O

1 5 10 20 30 50 2 Weeks

KRADS($i)

Figure 43:HSSR-7110 Proton Induced Turn-On Time Degradation.

14

3001

25014_

//

10olJ

501 j

0 I b I I I

1 5 t0 20

KRAD$(SI)

j//_\_.\

//I

30 SO 2WNlas

Figure 44:HSSR-7110 Proton induced Tum-OffTime Degradation.

k. OLH249 (Isolink)The OLH249 was irradiated with 195MeV protons at IUCF.

IF was swept from 4 to 26mA with VcE = 5V. CTR

degradation was observed at 6El lp/cm 2.

1. OLF400 (Isolink)The OLF400 was irradiated with 63MeV protons at

UCD/CNL. Some degradation of CTR was noted at 1.3E12

p/cm 2 at low IF [121. See Figure 45.

4m ¶

Figure 45:OLF400 Proton Induced CTR Degradation.

m. OLS700 (Isolink)The OLS 700 was tested with 63MeV protons at UCD/CNL.

Significant degradation of the detector was observed at2El lp/cm 2 [12].

n. P2824 (Hamamatsu) Multiple Tests


protons with a minimum fluence of 2xl0_°p/cm 2. TheHamamatsu P2824 was tested and CTR degradation was

observed 131.

Interpoint reported to us that the MHF+ series DC/DCconverters with LDC 9603 and 9616 contain the Hamamatsu

P2824 optocoupler. Other LDCs did not necessarily contain

this optocoupler. We carried out proton and neutron step

irradiations of the P2824 optocouplers at LLUMC, SPR, and

IUCF.

The results from exposing six optocouplers with a 51.8 MeV

proton beam at LLUMC are shown in Figure 46. Resultsfrom neutron exposures of six devices carried out at SPR are

given in Figure 47. IUCF 195 MeV proton results for twodevices are plotted in Figure 48. The pre-irradiation values

are shown at zero fluence. Each plot shows the average CTR

of the devices for various I_ shown [3,10l.

0!U

t

2e

10

0

om cw_mt

...o-I 3 ,_

..e..S 2 m_

_77_

L -.¢_10 _ mA

0 1E÷t$ 21E +10 SE+tG 4E_l(I SE+I0 Sic +10 ?EtS0

Flu me |pretef_|fem _ )

Figure 6:P2824 Proton Induced CTR I)egradatio_ (Testing at LLUMC).tee

|0

10

¢_E*U0 S._E*I_I td_E÷ll IdtE_!l 2.E÷11 2J_E+11 3.11r+tl 3.$E_.11 4.0E+t$ 4JSE_11 SllE+lt

Flumee |_eu¢_e_|/em_)

Figure 47:P2824 Ncu_ Indeed CTR I_g_l_i_ (Testing ,,t SPR).

...O_T _ mM i

-!!:'!:_ ,°

30

20 .....

,.O.OE_O $.|E÷tg I.IH[+tt IAE+I1 ;LI)E+11 2JE+I1

_em_e I_llo_m _)

Figure 48:P2824 Proton Induced CTR Degradation (Testing at IUCF).

$JE+11

15

5) Jet Propulsion Laboratories, NASA

a. 4N49 Multiple Tests, Multiple VendorsThe Mii 4N49 was irradiated with 192MeV protons at IUCF.

The Optek 4N49 was irradiated with 192MeV protons atIUCF.

The TI 4N49 was irradiated with 192MeV protons at IUCF.

b. 6N134 (HP)The 6N134 was irradiated with 192MeV protons at IUCF

and 50MeV protons at UCD/CNL.

c. 6N140 fliP)

The 6N140 was irradiated with 192MeV protons at IUCF.

d. HCPL-5230 (liP)

The HCPL-5230 was irradiated with 50MeV protons atUCD/CNL.

e. OLH1049 (Optek) Multiple TestsThe OLH1049 was irradiated with 50MeV protons atUCD/CNL.

6) Lockheed Martin Space System Company, Missiles &

Space Operationsa. 4N35, 4N49, 6N140 (Mii)

The Mii 4N35, 4N49 and 6N140 optocouplers were tested

with 192MeV protons at IUCF. CTR degradation wasnoticeable in the Mii devices with IF = lmA and Vcc = 5V at

1El1 protonsJcm 2 as shown in Figure 49. A special process

Mii 4N35 was tested that showed improvement in the

hardness against CTR degradation.

g-

l:ll_oc,_*r Response to _ot_ IrradlMJon

_-4 _V, V:c = 5/, Ibw_ = lmA100 '. " i _; r':, _ " : ""i"

- ' .t o o; : : i :

: i rr

1

..... _ ..... ......;,.f. .... ._..... ; ..... _.,

(11 --o- 8o_t 2_0

-- L_'-4N_5_N 1--0--41_ JJU_rx SJN1 : :

I:¢an_allm

• : : r r':::

: : tl

• "4 :

1010 1011 1012

Rueme [pmio_crRJ

Figure 49: CTR measurements on the Mii 4N35, 4N49, 6NI40 and HP HCPL

2430, HCPL 2201 optocouplam.

b. HCPL-2201, HCPL-2430 (HP)

HP HCPL-2201 and HCPL-2430 optocouplers were tested

with 192MeV protons at IUCF. Test conditions were Iv =

lmA and Vcc = 5V. These devices did not show any

noticeable CTR degradation up to 6Eli protons/cm 2. Also

see Figure 49.

c. 81082-300 photediode (Mii)

The Mii 81082 photodiode was tested with 73MeV protons

at HCL. The photodiode showed degradation with

increasing fluence. (Pre irradiation Ic = 3.0rtA, 2E10p+/cm2

= 2.1FtA, 1.2E1 lp+/cm2 = 0.6}xA, 4.2E1 lp+/cm2 = 0.21xA.)

d. 62017 (GS3040-3 LED) (Mii)

The Mii 62017 (GS3040-3 LED) was tested with 73MeV

protons at HCL. The LED showed little change withincreasing fluence. (Pre irradiation IF = 15 mA, 2El0

p+/cm2 = 15.4 mA, 1.2Ell p+/cm2 = 15.3 mA, 4.2Ellp+/cm2 = 15.07 mA, (0.90 mW output at If= 50 mA))

e. OP224 LED/OP604 phototransistor (Optek)

The Optek OP224 GaAIAs LED and OP604 phototransistor

were tested with 73MeV protons at HCL. Displacement

damage was observed in the OP604 with VcE = 15V at a

fluence of 2E10p/cm 2. See Figures 50 and 51.

9V ........ i ......... Optek OPZZ4/OP604 Horu proton ...................

_,!_ . .....

al_I ............. : ...... : ............ :........output i i

i i : :-IV t " ' .

-gS.. [email protected],d ,,, [] 9ee..

Figure 50: Bottom trace is the output from the 0P604 after 2El0 protons/em =

at 73.3MeV. Note that the output has risen by at least 1.7V.

9V ......... _......... _010tek OPi_;_4/OP604 Harv proton ......... :..........

....... ....................... _ .......................... _ ....... !i......... i"'''m

1@v i • ! " " i : 'Input _ !

: I: I : !

f

,.,. " ';I .........................................................................•

: i

................................................ i ................ :.........................

OUtpUt

: 2-IV

-90u 188.I/dtu Bm 98ZH.

16

Figure 51 : Bottom lace is the oulpu! from Ihe OP604 after 1.2E I i protons/cm 2at 73.3MeV. Similar results were observed at 148MeV.

7) Naval Research Laboratory

a. MC099 (Mii)The MC099 was tested with 63MeV protons at UCD/CNL.

The test conditions were IF = 1, 3, 5, 7.5, 10, and 20mA and

VcE = 5V. Figure 52 shows Gain degradation.e .......................................................................................................................................

E

le 2o3 4 s 0 10 _2 14 I$

ira. _,m, in*!

Figure 52:MC0099 Proton Induced Gain Degradation.

b. OLI400 (Isolink)

The OLI 400 was tested with 63MeV protons at UCD/CNL.

The test conditions were Iv = 0.3, 0.5, 1.0, 1.6, 3.0, 5.0, and

10mA, Vcc = 4.5V and VcE = 0.4V. Figure 53 shows Gain

degradation.?0 ........................................................................................................................................

-[t

D

I _ 3 4 s s 7 e t

l_m _tmA!

Figure 53:OL1400 Proton l_tueed Gain Degradation.

c. QCPL-5729 (liP)

The QCPL-5729 was tested with 63MeV protons atUCD/CNL. The W,st conditions were IF = 0.5, 1.0, 1.6, 3.0,

and 5.0mA, Vcc = 4.5V and V_ = 0.4V. Figure 54 shows

Gain degradation.

14

I0

! i

IS .........................................................................................................................................

....:\/ / ..........:.__._._._./ /

/

/

05 l Is 7 _S 3 3S 4 4J

Im,¢ CvrmCl_A)

Figure 54:QCPL-5729 Proton Induced Gain Degradation.

8) Sandia National Laboratories

Five Mii 4N49 and five Isolink OLH249 optocouplers were

irradiated with neutrons at SPR. Immediately after

irradiation, the output current (Ic) was measured for VcEranging from 0 to 10V and for IF ranging from 0.5 to 20mA.

Figures 55 and 56 show CTR with irradiation conditions of

Iv = 1 mA and VcE = 2, 5, and 8V.

100

10.1O

"O 10. 24)N

m

10.3EIm

OZ 10"4-

10- s

pre

• 2V

-N " 5Vl

"Neutrons _%_

_- I ntA

' ' '1012 1013

Fluence, neutrons/cm 2Figure 55:4N49 IMeV Equivalent Neutron Induced CTR Degradation.

1014

Figure 56:OLH249 IMeV Equivalent Neutron Induced CTR Degradation.

5V

10._ e v

'-- I Neutrons

I Iso2_ \\\

10-_ __( i ipre 1012 10 _ 1014

Fluence, neutrons/cm _

17

B. Proton and Heavy Ion Single Event Transients

1) Goddard Space Flight Center, NASA

a. 66099 (Mii)

Validation of an optocoupler spaceflight experiment that isto be flown on STRV-ld was done at TRIUMF using 58MeV

protons with a minimum fluence of 2xl01°p/cm 2. Micropac's

66099 was tested and no SETs were observed [3].

b. 66123 Multiple TestsValidation of an optocoupler spaceflight experiment that is


protons with a minimum fluence of 2xl0_°p/cm2. Micropac's

66123 was tested and SETs were observed [3].

The Mii 66123 was tested with 68 to 225MeV protons at

TRIUMF [71. SETs were observed at various angles and

energies [5]. Figure 2 gives the results.

SQw_

"Efj Saap._ •

e- 2m[_.

f_ 1 rICE,08

II)In

tan_ _

oS 01Z._ '

0_.,00

0 de_ees

# • •

t" |4._ 4' •

30 80 130 100 230 280

Proton Energy in MeVFigure 57: SET Measurements vs. Proton Energy and Angle of Incidence on the

Output of the Micropac 66123.

c. 4N48 (Optek)

The Optek 4N48 was tested with 38.2MeV protons atUCD/CNL. No SETs were observed with the bias off.

Complete technical data, along with test procedures andresults are available [3,131.

d. 4N49 (Mii)



protons with a minimum fluence of 2x 101°p/cm2. Micropac's

4N49 was tested and no SETs were observed [3].

e. 4N55 (HP)

The liP 4N55 was tested with 38.2MeV protons atUCD/CNL. No transients were observed with the bias off.

Complete technical data, along with test procedures and

results are available [1,3,13].

f. 6N134 (Mii)

The 6N134 was tested with 58MeV protons at TRIUMF.

Transients were observed with the bias off. See Figure 58.

,*OOE-04-

3_.oe -

1

5 _.Ot

0_*00

$x

• xx • x• * _* t*ldl_ .,.,

• 1_o 4o Io me 10o 1:,o

JxSm*v elO3NeV t_V w2_aev I

Figure 58: SET Cross Section vs. Angle of Incidence for Various Proton

Energies.

g. 6N136 (Mii)

The Micropac 6N136 was tested with 38.2MeV protons atUCD/CNL. No transients were observed with the bias off.


results are available [ 1,3,13 ].

h. 6NI40A (HP)

The HP 6NI40A was tested with 38.2MeV protons atUCD/CNL. No transients were observed with the bias off.


results are available [ 1,3,131.

i. 6N140 (Mii)


protons with a minimum fluence of 2xl0_°p/cm 2. Micropac's

6N140 was tested and no SETs were observed [3].

j. HCPL-5401 (liP)

The kiP HCPL-5401 was tested with 38.2MeV protons at

UCD/CNL. Transients (20-25ns) were observed with thebias off. The cross section was g.5xl0 "z cm2/channel.


results are available [1,3,13].

flP5401bJased oflfe163 UeV p+, 4.5 volts

c I.OOE,.06

!

8 °

d 1Jo_oe t t I I I I

.29 0 20 40 _ SO 100

B*m inddmc, ar_l,

Figure 59: HP5401SET Cross Section vs. Angle of Incidence.

18

1"Ilk Rtlrl'. 2.00r-_/_ 171" III R_ Z_

_-_1 _ .................................. I

•"@ " F" : i i : .".... I'_-L". ........ i .... _.1"-"": '' i"' :" "': ....

- : 41-

I: • _ " " •

• : .'-

I." • t ....

,.,,. . .....• .m [

• g.- .............. _ ...................._ ,t .....

21'11 2.OOVf2 i 2.00_["_ M50.0115 CJll"%. 4.OOV 21Marl007

20:23:09

Figure 60: Capture of Tm_iem for HP5401.

k. HCPL-5631 (HP)

The HP HCPL-5631 was tested with 38.2MeV protons atUCD/CNL. Transients were observed with the bias off and

on. With the bias off, the transients were 20-60ns with achannel error cross section of 8.5xl0gcm 2. With the bias on,

no transients were detected at VcE -- 5.0V; however, therewere transients of _50ns with a channel error cross section

of _5xlOScm 2 at VcE = 4.5V. There was an angle of

incidence effect for both bias conditions. Complete technical

data, along with test procedures and results are available

[3,13].

HPSG31Biased Off,63 MeV 13+te_ results lot each ar_le c/

incidence

0000O0i

T

!C o¢+

0

• !

I | I i I |

10 _ 30 l0 _ _0

but mgl0_o_t:_ _t=n._ hi)

i

Figure 6 !: HCPL5631 Cross Section Data for Different Vc_.

ItP$¢31,Bi_ed off, iV, avelage results versus PC

simf Wmd beret JflcJdence angle

t .O_EDG

_.-_

i_ 1.ll0E'07 |

I t t

20 4O e0

8e:zrr,ir,oideme z¢_lo

I

8O I1_

Figure 62:HCPL5631 Cross Section Data for Various Angles of Incidence at38 and 63MeV.•rBk Ilun" 2.0t1_,$t._ I1" Ill _ I

t-.-T ............................. !

[ ! ! .- ! ! ! ] .

..... : ' " ". ............ 7-"................ : .... "

_,_,_ ._ _..,-,-,...+..i_:÷_-_.-._-_-,i

3-,

.:-- -.... ......... :_..._ ::_ .._*-_ , : ,, ......., .- ..... "

4 ...........................................

_.ee w_ ch4 s.eo v_ ix:n,t:4s

Figure 63: Capture of a Transient in the HP563 I.

!. HCPL-6651 (HP)


protons with a minimum fluence of 2xl0S°p/cm2. Threeseries of tests were run on the liP HCPL-6651. With no

filter, SETs were observed. With the passive and active filtertests, no SETs were observed [3]. Some angle of incidence

data was taken as well. See Figure 64.

7,0OE-O0

e.OOE-Oe

$.00C_

4,00E-OO

$,_-_

2,_-00

O._E+CO

8.00E-OI .....................................................................................

1

tO 20 _0 40 _0 e0 70

Figure 64: SET Cross Section vs. Proton Energy for HCPL6651.

Proton and heavy ion induced SETs were observed for

various angles and proton energies at TRIUMF and 240MeV

He ions at MSU/NSCL. A complete description is given in

[1,5]. For this application, the proton cross section at220MeV was lxl0_cm 2 per optocoupler channel and did not

vary with angle. However, there was angular dependence

with 70MeV protons. The proton cross-section at 0 degrees

was lxl0_cm 2 and at 90 degrees it was lxl0Tcm 2. Limited

heavy ion data are available in [5][3].

m. OLH249 & OLH5601(Isolink)

Heavy ion SET testing was performed at MSU/NSCL. SETswere observed on these two devices at a LET of 37

MeV-cm2/mg for both devices. Cross sections were not

computed 15,71.

n. OLH560 l(Isolink)

19

Heavy ion SET testing was performed at TRIUMF. SETswere observed in this device at a LET of 37 MeV.cm2/mg for

both devices. See Figure 65.

B_-m

s _-ae •

|j 4 tla_ae

!a mE-a0

• • 8w

• _¢ t I

= z m -a

w

x

20 40 O0 leo SO0 f_'o

e_401 dl_eIMo

Figure 65:OLH5601 Cross S_-tion vs. Angle of Incidence for Various Proton

Energies.

O. P2824 (Hamamatsu)



protons with a minimum fluence of 2xl01°p/cm 2. TheHamamatsu P2824 was tested and no SETs were observed

I31.

2) Jet Propulsion Lab, NASAa. 6N134 (HP)

The HP 6N134 was tested with various heavy ions at BNL,

192MeV protons at IUCF and 50MeV protons at UCD/CNL.

b. 6N134 (Mii)

The Mii 6N134 was tested with various heavy ions at BNL,

192MeV protons at IUCF and 50MeV protons at UCD/CNL.

c. 6N140 (HP)The HP 6N140 was tested with various heavy ions at BNL

and 50MeV protons at UCD/CNL.

3) Lockheed Martin Space System Company, Missiles &

Space Operationsa. 4N35, 4N49, 4N49 special process, 6N140 (Mii),

The Mii 4N35, 4N49, 6N140 optocouplers were tested with

44 to 192MeV protons at IUCF. The protons were at normalincidence to the devices under test with VcE = 5V. The

trigger level was set to capture 0.SV or greater transients.The 4N35 showed no SETs to 5Ellp/cm 2, both 4N49s

showed no SETs to 4Ellp/cm 2 and the 6N140 showed no

SETs to 8E 11 p/cm 2.

b. HCPL-2201, HCPL-2430 0-if ))The HCPL-2201 and HCPL-2430 were tested with 44 to

192MeV protons at IUCF. The protons were at normalincidence to the devices under test with Vcr = 5V. The

trigger level was set to capture 0.5V or greater transients.

The transient upset cross sections measured for these devices

are shown in Figure 66.

prcAon Ups( Cr_s 8eclk_ of HCPL 2430 Opkel Coulder

1E8[3 HCIq. :4I 1_3 Indem _ O_lr m. mm nmml InadmO HOPl._Oat_ b_p._ - W '1_0 le_llocqeu'eO._mIMdm..

& Ibm _tmdt0b n_lp tf_

1"1E-7.t._,...._..--_..............J.........................................................--

- ...... :,, :-,,...... 1 ........ i .............

.................. i ....................

1E-1C_. .... 50 ' ' ' 100 " " 150 " ' ' 200

i:_,_n E.mmW[MoVl

Figure 66:HCPL2201 and HCPL2430 Cross Sections for Various Proton

Energies.

c. 61082-300 photodiode O¢fii)

The 61082-300 photodiede was tested with 73 and 145MeV

protons at HCL. Figures 3a and 3b are traces of thetransients captured. With 10mV logic signals, transient

glitches as large as 4mV were detected superimposed on the

LO and HI digital signals. The top trace is the input signal,

while the lower trace, magnified also, is the output signal

from the photodiode. The latter trace's horizontal scale is

magnified 5X to resolve the glitches further. Due to time,

quantitative measurements of the frequency of these glitches

as a function of incident angle and proton energy were not

pyLformed..........i........._.ims .xl 6,B02,._.o,., ..............i.........i

/dl_

_.L ....... !_ ,.te_

...................::..................i..........*"""_ ........::.........i...................::-3SV I nll.1 : :

".._-%-_ "¢-,-'di_ m,_ _.._o,scm_

lg.0mV ............... ........ :......... ; ......... i ......... ; ........ : ........ !........ ]........

............. ! ............... ! ....... : ........ i ........ ...... : ......... ! ..........

_24_m

.........................i.........i.......i..................i.........i..................

2OO_e/da. [1_ 2.E24_

Figurc 67:61082 SET _od on the LOW Side.

2O

Figure 68:81082 SET Observed on the HIGH Side.

1.0

0.8(J

"O 0.6

0,4

70 0.2

4) Naval Research Labs

0.0 i , m

10_ 104 10s 10 s

Dose, rad(SiO=)Figure 69:4N49 Co-60 TID Induced CTR Degradation.

1.0

d. OP604 phototransistor (Optek)The OP604 phototransistor was tested with 75 and 145MeV O

protons at HCL with VcE = 5V. No transients were observed "_N,_ 0.8in the phototransistor.

O 0.7Z

5V

Co-S0 Vcs" 2 V .

I,=1 mA _.

0.6 i , m I10' 10 4 10s 10'

Dose, rad(SiO=)Figure 70:OLH249 Co-60 TID Induced CTR Degradation.

QCPL-6637 (HP)

The QCPL-6637 was tested with 63MeV protons at

UCD/CNL. The protons were normal incidence with Vc_ =

5V. There were output conditions. With a 20pf capacitor, o

= 3.7E-8cm:/channei and with a 100pf capacitor, cr = 2.8E-8cm2/channel. The latter condition was measured with a

1GHz oscilloscope and the output transients were 55ns

+10%.

C. Total Ionizing Dose

Sandia National Labs

Five 4N49 and five OLH249 optocouplers were irradiated atSandia National Laboratories Radiation Hardness Assurance

Department Co-60 irradiator and characterized for their

response to total-dose irradiation. Optocouplers wereirradiated to total doses of 1 Mrad(Si) in logarithmic steps

with Co-60 gamma rays with zero input and output bias (all

pins shorted together) at a dose rate of 50rad(Si)/s.

Immediately after irradiation, the output current (Ic) was

measured for output voltages (VcE) ranging from 0 to 10V

and for input currents (IF) ranging from 0.5 to 20mA.

Figures 3 and 4 show degradation of CTR with IF = lmAand with VcE = 2, 5, and gV for 4N49 and OLH249

optocouplers, respectively. As noted in the figures, the 4N49

optocouplers show considerably more degradation in CTRwith total dose than the OLH249 optocouplers.

VII. APPLICATION OF TEST DATA

A radiation data point on an optocoupler, as such, is simply

a data point. Interpretation of that data for an actual space

flight application becomes more complex. In this section, we

will provide several lessons learned in this arena.

A. Damage Issues

For damage issues, determining CTR degradation for a

specific application has been shown to be a function of

proton test energy, circuit parameters (Vet. Vc_, If, Ic, Load),

and the mission-specific mapping of the test energy to the

transported mission environment.

Some devices may have significant device to device variance

[7]. In the case of the 3C91C presented here, the initial CTR

varied by as much as 44 in the same lot. This producedcurves with very different slopes for the CTR degradation.

There can be a strong dependence of circuit operating

parameters on the test results. If the initial VcE for a

particular device is very low (resulting in saturation of

collector current), the forward current will have little effect

on the output (nearly constant CTR with increasing dose)

21

untila largeenoughfluenceis reachedtocausesignificantdegradationin theoutputoftheLED.Thedegradationthen

picks up its more traditional exponentially decreasing curve.

If VcE were high to begin with, small changes in forward

current produce much larger changes in CTR, resulting in a

more typical degradation plot.

We strongly recommend determining CTR degradation as a

function of proton energy. In lieu of that, attempts have

been made to utilize non-ionizing energy loss (NIEL)

function. However, the risks are quite high due to the

uncertainty in the dominant mechanism in the hybrid

optocoupler (Si PIN diode or GaAIAs LED) [4].

B. SET lssues

For SETs, it's important to understand not only if transients

are possible, but also whether the SETs are able to propagatefurther in their application. Should the transient propagate

as false data, a false signal, etc., numerous problems could

result similar to those seen on-orbit in HST and Iridium [14].

The end result of a transient will depend greatly on the pulse

width and height, coupled with the speed of the device. For

slower devices, the transient may be filtered out by virtue of

the duration being much less than the clock speed. In faster

devices, it may be necessary to provide passive filtering,

active filtering or multiple channel voting by follow-on

circuitry to remove the transient and prevent data corruption

or loss [ 1].

There is a significant angular and energy dependence on

cross section in several devices. The increased angle of

incidence creates a longer path length for the particle tointeract with the diode. This condition increases the

probability of depositing a significant enough charge tocause a transient in the device. Often the cross section can

be an order of magnitude or greater than what would be

found if only normal incidence data were taken into account.

Prediction methods for SETs, accounting for potential direct

and indirect ionization components, are currently being

developed at NASA [15].

VIII. OTHER RECOMMENDATIONS

1. Application-specific testing on a large sample size is, as

always, recommended whether performing tests fordamage or SET, especially if the optocoupler is

performing a mission critical function.2. When interpreting a proton damage set, it is important

to have application-specific data or failing that, have

generic data that hounds (high and low) the actual

application.3. SET tests should be performed over a range of proton

energies and angles in order to perform proper ratecalculations. Heavy ion contributions must also be

quantified.

.

.

Items such as sample-to-sample variance, interpolation

of data to a specific application, the application of NIEL,

annealing, and aging drive recommendations for

significant pre-mission radiation design margins to be

used for degradation issues.

Linear stability versus absolute CFR must be consideredfor device selection. A designer may have to review

data from two different parts that provide the same

function. One may degrade only very slightly with

increasing fluence, the other, significantly. However,

the device that degrades significantly may still have a

higher CTR after degradation than the less sensitive

device, making it the choice of the designer. On the

other hand, if CTR stability is desired, the less radiation

sensitive device might be the proper choice.

IX. ACKNOWLEDGMENT

The authors would like to thank the NASA/Electronics

Radiation Characterization Project and the Defense Threat

Reduction Agency, Radiation Tolerant Microelectronics

Program (Contract Number 00-3001) for supporting thiswork.

X. REFERENCES

[1] K.A. LaBel, et al. "Proton-Induced Transients in Optocouplers: In-Flight

Anomalies, Ground Irradiation Test, Mitigation and Implications." IEEE

Trans. Nuc. Sci. 44(6)' December 1997: 1885-1892.

[2] B.G, Rax, et al. "Total Dose and Proton Damage in Optcgxmplers." 1EEE

Trans. Nuc. Sci., 43(6), December 1996:3167-3173.

131 M.V. O'Bryan, et al. "Single Event Effect and Radiation Damage Results

for Candidate Spacecraft Electronics." IEE, E Rad. Eft. Data Workshop,

July 1998: 39-50.

[4] R.A. Reed, et al. "Energy Dependence of Proton Damage in AlGa.As

Light-EmiUing Diodes." Paper to be [wesented at 2000 NSRECConference.

[5] R.A. Reed, et al. "Emerging Optocoupler Issues with Energetic Particle-

Induced Transients and Permanent Radiation Degradation." IEEE Trans.

Nuc. Sci., 45(6), December 1998: 2833-2841.

[6] M. D'Ordine. "Proton Displacement Damage in Optocouplers." 1EF_,E

Rad. Eft. Data Workshop, July 1997: 122-124.

[7] M.V. O'Bryan, et al. "Recent Radiation Damage and Single Event Effect

Results for Microelectronies." IEEE Rad. Eft. Data Workshop, July

1999: 1-14.

[8] A.H. Johnston, et al. "Single-Event Upset Effects in Optocouplers." IEEE

Trans. Nuc. Sci., 45(6), _ 1998: 2867-2875.

[9] A.H. Johnston, etal. "AngulatandEnecgyDe_ofProtonUpaetinOptocouple_." IF_.EE Trans. Nuc. S'ci., 46(6), December 1999: 1335-

1341.

[10] R.A. Reed, et al. "Test Report of Proton and Neutron Exposures of

Devices That Utilize Optical Components an are Contained in the CIRSlnstrurnenL"

http://radhome.gsfc.nasa, gov/redhome/pnpers/i090397.html

[11 ] G. Jackson. "Radiation Test Results foe he Hewlett Packard HSSR-7110

Optocoupler."

http://radhome.gsfc.nasa.gov/radlumae/pnpers/d 12 ! 696.htm

[12] Unpublished test _ 3/26/98.

[13] R.A. Reed. "Test Report fo¢ Proton Induced Single Event Transients

(SET) in Optocouplers."

http://radhome.gsfc.nua.gov/redhome/imCem/d031997.htm

[14] B. HeidergotL "Iridium and Celestri _llation Update." 11 e' SEE

Symposium. April 1998.

[15] K.A. LaBel, NASA/GSFC, personal communication, 2000.

a compendium of recent optocoupler radiation test data · pdf filea compendium of recent...

Documents