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Page 1: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 2: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 3: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 4: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 5: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 6: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 7: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 8: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 9: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 10: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 11: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 12: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 13: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 14: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 15: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 16: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a
Page 17: eprints.ucm.es · A switching tunnel device has been designed based on a MIS switching diode [9]. A metal, a thin insulator layer 100 Å, an epitaxial n semiconductor region and a

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