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Manufacturing and performance of quantum cascade lasers for industrial applications

Mariano TroccoliDirector, Product Development

AdTech Optics Inc.

In-house capabilities at ATO

Device Fabricationburied-het process

for RT CW operation

Test and MountingC or CS open-mount, TO-3, HHL

Laser Designfull modeling of QCL devices with proprietary software

MOCVD Growth 2 reactors dedicated to QCLs production

FROM CONCEPT

TO PRODUCTION

12 YRS in business25 PPL on QCLs11,000 SQFTITAR compliant

Mid-IR “molecular fingerprints”

CW DFB QC Lasers: wide range coverage of the mid-IR

• 30dB SMSR• CW, RT Operation• 3-4 cm-1 tunability• Broad coverage of mid-IR• Scalable technology for affordable, portable sensors

Full list of DFB wavelengths is available at www.atoptics.com/laser_specs.html

10-5

10-4

10-3

10-2

10-1

100

1270 1280 1290 1300 1310

Wavenumbers (cm-1)

Inte

nsi

ty (

a.u

.)

New: 12um

Applications of Mid-IR spectroscopy

AnalyticalHyper-spectral imagingMicroscopyAnalysis of food, water, fluids, etc.

EnvironmentalEmissions & pollutant monitoringPower generation & catalytic processesCombustion processes

Defense & SecurityIRCMIED detectionStand-off haz-mat detection

IndustrialProcess monitoring and optimizationLeak detectionQuality control

Bio-medical

Advantages of Optical Detection:

Non-invasiveHighly SelectiveHighly SensitiveIn-situ or stand-offClean

Direct Absorption measurements with a DFB QCL: detector saturation issues

0

20

40

60

80

100

0 0.2 0.4 0.6

Current (A)

Pe

ak

Op

tica

l Po

we

r (m

W)

0

20

40

60

80

100

0 0.2 0.4 0.6

Current (A)

Op

tica

l Po

we

r (m

W)

0

20

40

60

80

100

0 0.2 0.4 0.6

Current (A)

Op

tica

l Pow

er

(mW

)

Line scanning by current tuning

0.1

1

10

100

1000

10000

1030 1040 1050 1060 1070 1080

Wavenumbers (cm-1

)

Inte

ns

ity

(a

rb.

un

its

)

!!

Photo-Acoustic Sensing systems benefit from Hi Power QCLs

Sensor system

Multipass system QEPAS system

Cell volume 225 ml 7.5 ml

Response t ~1 minute Several seconds

Optical path 57 m (17 cm cell length) 1 cm

Laser power 1-10 mWs 120150 mW

BG noise Etalon fringe Optical/thermal noise

MDC (1s) CH4: 5.9 ppb, N2O: 2.6 ppb CH4: 13 ppb, N2O: 6ppb

ADTECHQCL

QEPAS CELL

OPTICS

GAS

The challenges of low-power QCLsFundamental limits:QCL intrinsically a high current deviceShort intraband lifetimesUnipolar device2-electrode configuration

Material-related:Optimizing injection & conversion efficiencyMinimizing losses / reducing operating currentMinimizing voltage “defect”Reducing voltage drop on contacts / claddingsOptimizing mode confinement

Fabrication-related:Reducing device sizeOptimizing fabricationOptimizing coatingsOptimizing mounting and heat transfer

QCL band structure

Vtot N x h x Vdef + VcVtot N x hGain / overlap

WavelengthBackfilling

Contact res.

BH process: fabrication challenges for low-Power QCLs

ACTIVEi-InP i-InP

waveguide

Laser emission

Narrow device fabrication:

Etching (aspect ratio, intf. smoothness, …)Doping optimizationRe-growth quality / background impurities

I = J x A

Material:- Losses- Coatings

Geometry:- Emitter width- Cavity

Threshold density vs. wavelength

3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.000.1

1

10

Wavelength (um)

Thre

shol

d cu

rren

t den

sity

(kA/

cm2)

J = 1.5 kA/cm2

Jth vs. device width

2 3 4 5 6 7 8 90

0.5

1

1.5

2

2.5

Waveguide size (um)

Thre

shol

d cu

rren

t de

nsit

y (k

A/c

m2)

Device wavelength: 4.7um

Narrow BH devices @ 5um (pulsed operation, RT, no heat sinking)

(W)/10

Low-Consumption DFB QCL

0

20

40

60

80

0 0.05 0.10 0.15 0.20

15 C25 C35 C45 C

Current (A)O

ptic

al P

ower

(m

W)

= 4.5um ; Emitter Width= 3.7umPE

th = 0.8W ; PE(50mW) = 1.9W

4.57 4.58 4.59 4.60 4.61

15 C25 C35 C

Wavelength (m)

Inte

nsity

(ar

b. u

nits

)

50mW

LWIR narrow device results

0

50

100

150

0 0.2 0.4 0.6 0.8

15 C25 C35 C45 C

Current (A)

Opt

ical

Pow

er (

mW

)

9.40 9.45 9.50 9.55 9.60

15 C25 C35 C45 C

Wavelength (m)

Inte

nsi

ty (

arb

. u

nits

)

=9.5um ; Emitter Width= 7umPE

th = 3.3W ; PE(50mW) = 4.7W

TO-3 DFBs for NH3 and CO2

0

200

400

600

0 0.4 0.8 1.2

Current (A)

Pe

ak

Op

tica

l Po

we

r (m

W)

4.33 4.34 4.35 4.36 4.37

15 C25 C35 C

Wavelength (m)In

ten

sity

(a

rb.

un

its)

0

100

200

300

0 0.4 0.8 1.2 1.6

Current (A)

Pe

ak

Op

tica

l Po

we

r (m

W)

0

50

100

150

0 0.25 0.50 0.75 1.00 1.25

Current (A)

Op

tica

l Po

we

r (m

W)

10.30 10.32 10.34 10.36 10.38

15 C25 C35 C

Wavelength (m)

Inte

nsity

(ar

b. u

nits

)

VHL DFBs: 5.26 and 4.53um

0

5

10

15

0 0.1 0.2 0.3 0.4

15 C25 C35 C

Current (A)

Vo

ltag

e (

V)

0

20

40

60

80

0 0.1 0.2 0.3 0.4

15 C25 C35 C

Current (A)O

ptic

al P

ow

er

(mW

)

4.52 4.53 4.54 4.55

15 C25 C35 C

Wavelength (m)

Inte

nsity

(ar

b. u

nits

)

4.52 4.53 4.54 4.55

0.21 A0.26 A0.30 A

Wavelength (m)

Inte

nsity

(ar

b. u

nits

)

High power DFBs

(a) (b) (c)

max = Pout/PE = 250mW/5W = 5%

Conclusions & PerspectivesQCLs are becoming a mature technology and becoming

production/manufacturing ready :

- laser performances are being tuned to the application requirements

- product development is steadily moving forward

- field testing of QCLs is successful and integration is following

- customers need industry-wide standards and reliable suppliers

AdTech has the manufacturing capabilities, technical expertise and

financial stability to pursue the full development of QCL-based products.

We are committed to support the scientific community and our customers

throughout this process.

Acknowledgements

AdTech Optics Team

Jenyu Fan (fab operations)Xiaojun Wang (material development)Rommel Ceballos (processing)Hien Quach (testing)Ulisses Gamboa (packaging)Gene Lin (coating)Charles Luu (tech sales)Ed Ho (Finance)Mary Fong (CEO)

Support from DARPA, ONR, MDA

QCL ManufacturingDifferent stages of laser manufacturing process

Target specsDevice Design

RW device test

Material growthQuickturn fab

BH Fab

BH Test

Coating

MountingPackaging

Material release

Data compliance

BH control

Reviewand release

Specs verific. and approval-targets-tolerances-critical thresholds

Waferanalysis

Data compliance

User qualificationField Test

Coating inspection CW - full

test

Burn-in &Custom-test

QCL Manufacturing – quality controlMeasurements and technologies for manufacturing control and repeatability

0 200 400 600 800 1000 1200 1400 1600 1800PWPEmax

0 500 1000 1500 20000

200

400

600

800

1000

1200

Pmax

Sl1

0

1

2

3

4

5

6

WP

Em

ax

Typ,HR,CF,2,15,5,11.68,Q330,A1715B

Typ,HR,CF,2,15,5,10.97,Q369,A1646B

Typ,HR,CF,2,15,5,11.25,Q370,A1651A

Typ,HR,CF,2,15,5,10.66,Q445,A1651B

Typ,HR,CF,2,15,5,11.39,Q446,A2337D

Hi Pow

Hi Eff

30.4 30.6 30.8 31.0 31.2 31.4 31.6 31.8 32.0 32.2 32.4 32.6 32.8 33.0 33.2Omega-2Theta (°)

0.1

2

5

1

2

5

10

2

5

100

2

5

1000

2

5

10000

2

5

100000

Inte

nsity (

counts

)

Luminescence mapping

Xray-scattering mapping

Yields across processes

Let Us Meet Again

We welcome all to our future group conferences of Omics group international

Please visit:www.omicsgroup.com

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