For Korean Silicon Tracker Group

Activities for Inner Tracker

H.J. Kim1, H. Park1, D.H. Kah1, H.J. Hyun1, Y.I. Kim1, D.H. Shim1

E. Won2, J.H. Choi2, H.C. Ha2, J.H. Han2, S.K. Park2

J. Lee3, B.G. Cheon4

1Kyungpook Nat’l Univ., Daegu, Korea2Korea Univ., Seoul, Korea

3Seoul Nat’l Univ., Seoul, Korea4Chonnam Nat’l Univ., Kwangju, Korea

• Introduction• Barrel Inner Tracker (BIT)• Sensor Test• Forward Inner Tracker (FIT) • Summary

• Introduction• Barrel Inner Tracker (BIT)• Sensor Test• Forward Inner Tracker (FIT) • Summary

For Korean Silicon Tracker Group

Vertex/Tracker in GLD

TPC

BIT

Barrel Inner Tracker (BIT) :• r = 90 mm (innermost), 300 mm (outermost)• half z = 185 mm (innermost), 620 mm (outermost) • 4 layers (561m silicon equivalent thickness) • coverage: |cos| <0.9 • spatial resolution: 10 m

(FIT and ET not shown)

For Korean Silicon Tracker Group

Momentum Resolution

• Without IT: 4.4 x 10-5 (GeV)-1 (high momentum limit)• With IT: 3.9 x 10-5 (GeV)-1

Geant4 with single at 900

σ/p

T2 (G

eV)-1

TPC only

TPC+VTX

TPC+IT+VTX

improve

For Korean Silicon Tracker Group

Number of Layers vs Resolution

2 layer 4 layer 5 layer

4 layer is probably enough

/p

T2 (

GeV

)-1

Geant4 with single at 900

For Korean Silicon Tracker Group

What else…?

4 layers

5 layers

• Varying -position resolution (m to 20m) -addition at outermost layer (at 37cm) -silicon thickness (561m to 300m)

and checked the momentum resolution, but did not find significant changes

So far, the current configuration seems to be good (caution: at the level of the study with single muons)

Outermost layer @ 37cmOutermost layer @ 37cm

σ/p

T2 (G

eV)-1

For Korean Silicon Tracker Group

BIT Configuration

90 mm

160 mm

230 mm

300 mm

Module Half z R sensor size

Layer 1 185Close 88

50x50Far 92

Layer 2 330Close 158

50x50Far 162

Layer 3 475Close 226 50x50

90x90Far 234

Layer 4 620Close 297

90x90far 303

(unit : mm)

BIT 1st layer

50x50

BIT 3rd layer

50x50

90x90

230 4

For Korean Silicon Tracker Group

Double-sided Silicon Strip Sensor

• 5 inch wafer technology • n-type substrate (high resistivity > 5 K) • DC type sensor • double metal structures on p-side • 11 masks in total

Double-sided strip position Sensor

P-side

DSSD

SSD

For Korean Silicon Tracker Group

N-side P-side

waferTOPSIL(5inch, high resistivity, (100), FZ, DSP)

strip width 9m

strip pitch 50(100) m

thickness 380 m readout pitch 50m

size 51 x 26 mm2 readout channel 512(512)

Prototype

For Korean Silicon Tracker Group

see next slideN-side

• bulk pad

• readout pad

• p-stop pad

(punch through)

• guard-ring

N-side

• bulk pad

• readout pad

• p-stop pad

(punch through)

• guard-ring

P-side

• bulk pad

• readout pad

• double-metal structure

(hourglass pattern)

• guard-ring

P-side

• bulk pad

• readout pad

• double-metal structure

(hourglass pattern)

• guard-ring

p-stop

readout paddouble metal structure

DSSD Prototype

For Korean Silicon Tracker Group

Probe Card for Strip Measurement

strip readout line

connector for signal readout

For Korean Silicon Tracker Group

Sensor Measurement

Guardring

Strips

Full depletion voltage

Good results of sensors (characteristics on P-side)

no failed strip p-strip leakage current : 8~20nA/strip @ 100V guardring current ~ 1A @ 100V guardring capacitance ~ 50pF @ 100V full depletion voltage ~ 95 V

For Korean Silicon Tracker Group

Sensor Signal Readout

hybrid board

control board(spartan3)

HV/level shift/LV generator

VA

Version 1.0

For Korean Silicon Tracker Group

Status of Hybrid Board

shift_out_b

out_p: can be interpreted as pedestal w/o sensor< 10 mV (peak to peak)

small spikes (due to clock?)

For Korean Silicon Tracker Group

S/N Measurement

S/N = 15.6

Sensor for a exp. of NASA

Pb Pb

reference sensor

sensor90Sr source

Dark box

For Korean Silicon Tracker Group

S/N = 25.0

Developed DSSDDeveloped DSSD

sigma=18.8±0.16

S/N Measurement

pedestal (HAMAMATSU SSD)

SSD from H companySSD from H company

signal & pedestal (DSSD)

sigma=14.4±0.2

For Korean Silicon Tracker Group

Forward IT Configuration

• Maximum active radius : 380• Minimum active radius : 24• Maximum Z (active) : 1015 • Minimum Z (active) : 155• Covering angle : 4.28 ~ 42.09

module z r min r max

V1.0 V2.0 V3.0 V3.1 V3.2 V1.0 V2.0 V3.0 V3.1 V3.2 V1.0 V2.0 V3.0 V3.1 V3.2

layer 1 200 145 145 155 30 25 24 24 140 70 70 76

layer 2 350 290 290 195 290 55 45 32 27 32 170 140 140 95 140

layer 3 500 435 435 340 435 80 70 37 32 37 250 210 210 165 210

layer 4 650 580 580 485 580 80 80 47 41 47 320 280 280 235 280

layer 5 900 725 725 630 725 80 100 57 51 57 320 360 360 305 380

layer 6 1150 870 870 730 870 80 120 66 58 66 320 380 380 355 380

layer 7 1400 1015 1015 830 1015 80 140 76 64 76 320 380 380 380 380

VTX

BIT

TPC

Forward IT• spatial resolution 10 m• 7 layers (thickness 561 m Silicon strip)

Version3.2

For Korean Silicon Tracker Group

Momentum Resolution

Without forward

4 layers only(2,4,6

removed)

7 layers

4 layer option seems slightly better at low pT

This plot is from a fast sim.(Kalman filter in but no Geant4)

single muon @ (cos=0.95)

Momentum resol. is better w/ FIT than w/o FIT.

σ/p

T2 (G

eV)-1

improve

For Korean Silicon Tracker Group

Configuration of BIT and FIT

TPC

VTX

BIT

Beam Pipe

90

160

230

300

400

155 290 435 580 725 870 1015

32

140

37

210

47

280

57

380

66

380

76

380

24

76

185

330

475

620

FIT

For Korean Silicon Tracker Group

Mechanical Structure

• Our design concept is that the ring support structure for FIT, thickness 2 mm, supports layers of BIT. And strip sensors hold BIT support frame in suspense.

Ring support structure for FIT

BIT support frame

For Korean Silicon Tracker Group

Material Budget

material X0 (cm) Density (g/cm^3)

Carbon Fiber 22.124 1.93

Silicon 9.37 2.33

Copper 1.40 8.94

Air 30391.82 1.20E -03

Al 8.90 8.90

Polycarbonate 34.59 34.59

Material budget [FIT]

0.0%

1.0%

2.0%

3.0%

4.0%

5.0%

6.0%

7.0%

8.0%

0.0 0.2 0.4 0.6 0.8 1.0

cos

X/Xo

Silicon( FIT )

BP+CF+PCB+Silicon

Beampipe

• To optimize the position of support structure, we have to find the structure in which radiation length is minimum.

• In a current version, the range of the radiation length is

Material Budget [ BIT ]

0.0%

1.0%

2.0%

3.0%

4.0%

5.0%

6.0%

7.0%

8.0%

0.0 0.2 0.4 0.6 0.8 1.0

Cos

X/Xo

Silicon( BIT )BP+CF+SiliconBeam Pipe

FIT only

BIT only

For Korean Silicon Tracker Group

Material Budget

• area in which FIT and BIT is overlapped has the maximum value of a radiation length.

For Korean Silicon Tracker Group

• DSSD Designed, Fabricated and Tested: - IV/CV shows good quality sensor - S/N shows that the sensors are in good shape - more tests are in progress - will fabricate AC-SSD on 6-inch(400 m) and 8-inch(500 m) wafers• Electronics to test sensors - built & reading out in progress (see next slide)• Simulation Study for detector configuration - 4 layers in Barrel as Inner Tracker seems reasonable - 7 layers in Forward as IT is being studied - optimization of mechanical structure is being studied - physics simulation is needed with current configuration

• DSSD Designed, Fabricated and Tested: - IV/CV shows good quality sensor - S/N shows that the sensors are in good shape - more tests are in progress - will fabricate AC-SSD on 6-inch(400 m) and 8-inch(500 m) wafers• Electronics to test sensors - built & reading out in progress (see next slide)• Simulation Study for detector configuration - 4 layers in Barrel as Inner Tracker seems reasonable - 7 layers in Forward as IT is being studied - optimization of mechanical structure is being studied - physics simulation is needed with current configuration

Summary

For Korean Silicon Tracker Group

New Power, Logic, Shift and Current Source Board

VA_out

INA134

LM337

EMCO1+40V

EMCO2-40V

MC7815

DS26LS32

DS26LS32

To X

ilinx (2

0p

in)

To Power (8pin)

To Hybrid (50pin)

LM317

LM337

LM317

LM317

LM317

LM317

LM360M LM360MLM360M LM360M

LM360M

cal

Trig

MC7805MC7905

+15V+1.5V/-2.0V +40V/-40V

Analog power

Board size: 8.5 8.5 cm2