advance nano device lab. fundamentals of modern vlsi devices 2 nd edition yuan taur and tak h.ning 0...
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![Page 1: Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch5. CMOS Performance Factors](https://reader036.vdocument.in/reader036/viewer/2022062320/56649d225503460f949f842f/html5/thumbnails/1.jpg)
Advance Nano Device Lab. 1
Fundamentals of Modern VLSI Devices 2nd EditionYuan Taur and Tak H.Ning
Ch5. CMOS Performance Factors
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Advance Nano Device Lab. 2
Ch5.1 Basic CMOS Circuit Elements
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Advance Nano Device Lab. 3
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Advance Nano Device Lab. 4
CMOS Inverters
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Advance Nano Device Lab. 5
CMOS Inverter Transfer Curve
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Advance Nano Device Lab. 6
CMOS Inverter Transfer Curve
(5.1)
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Advance Nano Device Lab. 7
CMOS Inverter Noise Margin
(5.2)
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Advance Nano Device Lab. 8
CMOS Inverter Noise Margin
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Advance Nano Device Lab. 9
CMOS Inverter Noise Margin
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Advance Nano Device Lab. 10
CMOS Inverter Switching Characteristics
(5.3)
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Advance Nano Device Lab. 11
CMOS Inverter Switching Characteristics
(5.4) (5.5)
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Advance Nano Device Lab. 12
Switching Energy and Power Dissipation
(5.6)
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Advance Nano Device Lab. 13
Quasistatic Assumption
(5.7)
(5.8)
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Advance Nano Device Lab. 14
CMOS NAND and NOR Gates
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Advance Nano Device Lab. 15
Two-Input CMOS NAND Gate
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Advance Nano Device Lab. 16
Two-Input CMOS NAND Gate
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Advance Nano Device Lab. 17
Noise Margin of NAND Circuits
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Advance Nano Device Lab. 18
Layout of a Single Device
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Advance Nano Device Lab. 19
Layout of a CMOS Inverter
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Advance Nano Device Lab. 20
Layout of a Two-Input CMOS NAND
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Advance Nano Device Lab. 21
Ch5.2 Parasitic Elements
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Advance Nano Device Lab. 22
Source-Drain Resistance
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Advance Nano Device Lab. 23
Accumulation-Layer Resistance and Spreading Resistance
(5.9)
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Advance Nano Device Lab. 24
Sheet Resistance
(5.10)
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Advance Nano Device Lab. 25
Contact Resistance
(5.11)
(5.12)
(5.13)
(5.14)
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Advance Nano Device Lab. 26
Resistance in a Self-Aligned Silicide Technology
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Advance Nano Device Lab. 27
Parasitic Capacitances
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Advance Nano Device Lab. 28
Junction Capacitance
(5.15)
(5.16)
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Advance Nano Device Lab. 29
Overlap Capacitance
(5.17)
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Advance Nano Device Lab. 30
Overlap Capacitance
(5.18)
(5.20)
(5.19)
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Advance Nano Device Lab. 31
Gate Resistance
(5.21) (5.22)
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Advance Nano Device Lab. 32
Gate Resistance
(5.23)
(5.24)
(5.25)
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Advance Nano Device Lab. 33
Gate Resistance
(5.26)
(5.27)
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Advance Nano Device Lab. 34
Gate Resistance
(5.28)
(5.29)
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Advance Nano Device Lab. 35
Interconnect R and C
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Advance Nano Device Lab. 36
Interconnect R and C
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Advance Nano Device Lab. 37
Interconnect R and C
(5.30)
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Advance Nano Device Lab. 38
Interconnect Scaling
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Advance Nano Device Lab. 39
Interconnect Scaling
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Advance Nano Device Lab. 40
Interconnect Resistance
(5.31)
(5.32)
(5.33)
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Advance Nano Device Lab. 41
RC Delay of Global Interconnects
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Advance Nano Device Lab. 42
RC Delay of Global Interconnects
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Advance Nano Device Lab. 43
Ch5.3 Sensitivity of CMOS Delay to Device Parameters
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Advance Nano Device Lab. 44
Propagation Delay of a CMOS Inverter Chain
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Advance Nano Device Lab. 45
Propagation Delay of a CMOS Inverter Chain
(5.34)
(5.35)
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Advance Nano Device Lab. 46
Propagation Delay of a CMOS Inverter Chain
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Advance Nano Device Lab. 47
Bias-Point Trajectories in a Switching Event
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Advance Nano Device Lab. 48
Bias-Point Trajectories in a Switching Event
(5.36)
(5.37)
(5.38)
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Advance Nano Device Lab. 49
Delay Equation: Switching Resistance, Input and Output Capacitance
(5.39)
(5.40)
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Advance Nano Device Lab. 50
Delay Equation: Switching Resistance, Input and Output Capacitance
(5.41)
(5.42)
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Advance Nano Device Lab. 51
CMOS Delay Sensitivity to pMOSFET/nMOSFETwidth ratio
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Advance Nano Device Lab. 52
Device Width Effect with Respect to Load Capacitance
(5.43)
(5.44)
(5.45)
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Advance Nano Device Lab. 53
Sensitivity of Delay to Channel Length
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Advance Nano Device Lab. 54
Sensitivity of Delay to Gate Oxide Thickness
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Advance Nano Device Lab. 55
Sensitivity of Delay to Power-Supply Voltage and Thresh-old Voltage
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Advance Nano Device Lab. 56
Power and Delay Tradeoff
(5.46)
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Advance Nano Device Lab. 57
Sensitivity of Delay to Series Resistance
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Advance Nano Device Lab. 58
Sensitivity of Delay to Overlap Capacitance
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Advance Nano Device Lab. 59
Miller Effect
(5.47)
(5.48)
(5.49)
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Advance Nano Device Lab. 60
Sensitivity of Delay to Junction Capacitance
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Advance Nano Device Lab. 61
Sensitivity of Delay to Junction Capacitance
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Advance Nano Device Lab. 62
Top and Bottom Switching of a Two-Way NAND Gate
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Advance Nano Device Lab. 63
Top and Bottom Switching of a Two-Way NAND Gate
(5.50)
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Advance Nano Device Lab. 64
Ch5.4 Performance Factors of Advanced CMOS Devices
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Advance Nano Device Lab. 65
Small-Signal Equivalent Circuit
(5.51)
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Advance Nano Device Lab. 66
Small-Signal Equivalent Circuit
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Advance Nano Device Lab. 67
Unity-Current-Gain Frequency of an Intrinsic MOSFET
(5.52)
(5.53)
(5.54)
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Advance Nano Device Lab. 68
Unity-Current-Gain Frequency of an Intrinsic MOSFET
(5.55)
(5.56)
(5.57)
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Advance Nano Device Lab. 69
Effect of Transport Parameters on CMOS Performance
(5.58)
(5.59)
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Advance Nano Device Lab. 70
Low-Temperature CMOS
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Advance Nano Device Lab. 71
Low-Temperature CMOS