Adv

ance

d Pa

ttern

ing

Thin

Film

sO

ctob

er 2

4, 2

007

Min

h Tr

anA

dvan

ced

Proc

ess

Tech

nolo

gyTh

in F

ilms

Tech

nolo

gy

Spa

nsio

n In

c.

2©

2007

Spa

nsio

n, In

c.

Out

line

•A

RC

(Ant

i-Ref

lect

ion

Coa

ting)

& H

ardm

ask

mod

ule

area

ove

rvie

w•

AR

C-H

ardm

ask

mod

ule

deve

lopm

ent

•Fi

lms

chal

leng

es a

ssoc

iate

d w

ith u

se o

f a-C

•In

tegr

atio

n ch

alle

nges

ass

ocia

ted

with

use

of a

-C.

3©

2007

Spa

nsio

n, In

c.

•N

ode-

to-n

ode

mig

ratio

n to

sho

rter

λto

impr

ove

patte

rn d

efin

ition

.•

Num

ber o

f lay

ers

usin

g am

orph

ous

carb

on h

ard

mas

k:–

90nm

: 0 la

yer !

65nm

: 1 la

yer !

45nm

: 3 la

yers

!32

nm =

3+

laye

rs?

–Ve

ndor

s fo

r a-C

or e

quiv

alen

t film

s:

�A

MA

T (A

PF),

�N

VLS

(AH

M),

�A

SM

(NC

P).

•U

se o

f SiO

Nfil

ms

as A

RC

laye

rs c

ontin

ues

with

t/n/

kop

timiz

atio

n

AR

C-H

ard

Mas

k ov

ervi

ew

4©

2007

Spa

nsio

n, In

c.

Why

Har

d M

ask?

•A

s te

chno

logy

(pitc

h) s

hrin

ks:

–Li

thog

raph

y w

avel

engt

h !

shor

ter

–D

OF !

smal

ler

–R

esis

t thi

ckne

ss !

thin

ner

–H

owev

er, e

tch-

laye

r thi

ckne

ss d

oes

not s

cale

as

fast

–In

suffi

cien

t res

ist m

argi

n.

Subs

trate

(inc

. und

erly

ing

film

s)

Laye

r(s)

to

be e

tche

d

Phot

ores

ist

Tech

nolo

gy n

ode

90

nm

65

nm

4

5nm

32nm

Mas

king

Lay

er C

90nm

65nm

45nm

32nm

Wav

elen

gth

248n

m19

3nm

i-193

nmi-1

93nm

pitc

h (u

m)

10.

740.

490.

39Ta

rget

DIC

D (a

rb.

units

)1

0.69

0.39

0.31

Res

ist t

hick

ness

(a

rb. u

nits

)1

0.49

0.36

0.30

Etc

h la

yer t

hk (a

rb.

units

)1

1.03

0.91

0.84

AR

(rel

ativ

e)1.

01.

52.

32.

7

x

y

AR

= y

/ x

5©

2007

Spa

nsio

n, In

c.

Why

Har

d M

ask?

(2)

•So

lutio

n fo

r ins

uffic

ient

resi

st m

argi

n:–

To e

tch

diel

ectr

ic la

yer(

s) w

ith g

ood

etch

se

lect

ivity

to re

sist

, use

am

orph

ous

carb

on�

orga

nic

film

like

resi

st: a

shab

le�

a.k.

a. A

PF (A

MA

T), A

HM

(NV

LS)

�si

mila

r org

anic

film

is N

CP

(AS

M)

–a-

C u

sed

toge

ther

with

inor

gani

c AR

C fi

lm

(eg.

SiO

N) a

s ha

rd m

ask.

–O

ther

sol

utio

ns d

epen

d on

inte

grat

ion

need

(mat

eria

l etc

hed)

. �

Exa

mpl

e: m

etal

har

d m

ask

(Ti/T

iN) f

or

ultra

low

-die

lect

ric c

onst

ant e

tch)

.

65nm

65n

mw

a-C

/SiO

N

ILD

Lay

er(s

) to

be

etch

ed

Phot

ores

ist

Subs

trate

(inc

. und

erly

ing

film

s)

Phot

ores

ist

a-C

Die

lect

ric A

RC

1. E

tch

diel

ectri

c AR

C2.

Etc

h a-

C (a

nd re

mov

e PR

)3.

Etc

h IL

D a

nd re

mov

e AR

C.

Her

e pa

rtial

ILD

etc

h is

sho

wn.

4. R

emov

e re

mai

ning

a-C

6©

2007

Spa

nsio

n, In

c.

Req

uire

men

ts o

f film

s

•Li

thog

raph

y:–

Low

refle

ctan

ce fo

r com

bine

d fil

m s

tack

(A

RC

, a-C

, film

s to

be

etch

ed) (

R <

~1%

) at

lith

ogra

phy

wav

elen

gth.

�AR

C &

a-C

thic

knes

s, re

fract

ive

inde

x,

extin

ctio

n co

effic

ient

nee

d to

be

tune

d fo

r lo

w re

flect

ance

bas

ed o

n av

aila

ble

resi

st

and

to-b

e-et

ched

film

sta

ck.

–A

-C fi

lm tr

ansp

aren

t for

ste

pper

al

ignm

ent.

•Et

ch:

–A

RC

& a

-C th

ickn

ess

tune

d ba

sed

on fi

lm

stac

k an

d et

ch s

elec

tiviti

es.

0.250.

3

0.350.

4

0.45

k

1.4

1.5

1.6

1.7

n

a-C

film

n-k

spa

ce @

193

nm

00.

010.

020.

030.

040.

050.

060.

070.

080.

090.1

k_VI

1.75

1.8

1.85

1.9

n_V

I

a-C

film

n-k

spa

ce @

673

nm

7©

2007

Spa

nsio

n, In

c.

Is a

-C re

ally

am

orph

ous?

•TE

M, X

RD

!C

arbo

n fil

m is

inde

ed a

mor

phou

s–

no p

eaks

ass

ocia

ted

with

dia

mon

d st

ruct

ure

obse

rved

.–

shou

ld n

ot im

pact

LER

.

A-C

subs

trate

8©

2007

Spa

nsio

n, In

c.

Exam

ple

1

Fuzz

y re

sist

pr

ofile

SiO

N (

nm

)

a:C (nm)

F. T

sai

Refl

ect

an

ce <

1%

wit

h w

ide

ran

ge o

f a-C

th

ickn

ess

•A

-C e

nh

an

ces

patt

ern

d

efi

nit

ion

Hig

h LE

R a

fter e

tch

wit

hou

t a-C

Low

er L

ER

afte

r etc

hSh

arpe

r res

ist

prof

ile

wit

h a

-C

Furt

her L

ER

impr

ovem

ent

9©

2007

Spa

nsio

n, In

c.

Exam

ple

2

•R

efle

ctan

ce <

1%

for w

ide

rang

e of

a-C

& S

iON

thic

knes

ses.

•O

ptic

al p

rope

rtie

s of

a-C

& S

iON

film

s:

SEM

by M

. Tak

ahas

hi

targ

et

sub

nom

inal

A-C

:

KN

T(A

)

~0.4

~1.5

200

�10

00

020

4060

8010

00

0.2

0.4

0.6

0.8

Upp

er L

ayer

SiO

Nth

ickn

ess

(nm

)Reflectance (%)

•N

omin

al-fe

atur

e D

ICD

m

eets

targ

et;

resi

st

colla

pse

at

subn

omin

alfe

atur

e•

Adva

ntag

e of

a-C

!ca

n th

in d

own

PR

KN

T(A

)

~1~2

200

�10

00

SiO

N:

A-C

thic

knes

s (n

m)

Reflectance (%)

10©

2007

Spa

nsio

n, In

c.

Exam

ple

3

•N

ew S

iON

with

app

ropr

iate

n/

kta

rget

ed fo

r bas

elin

e o-

BA

RC

.

KN

Thic

knes

s~1

~2~

200

-100

0A

SiO

N:

J. R

eiss

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

n-SiON

.0.1

.2.3

.4.5

.6.7

.8.9

1.0

1.1

1.2

1.3

1.4

1.5

k-S

iON

Max

. Ref

lect

ivity

<= 0

.250

<= 0

.500

<= 0

.750

<= 1

.000

<= 1

.250

<= 1

.500

<= 1

.750

<= 2

.000

<= 2

.250

<= 2

.500

> 2.

500

new

SiO

N

Resi

st p

rofi

le w

ith

new

SiO

N

11©

2007

Spa

nsio

n, In

c.

Cha

lleng

es o

f usi

ng a

-C �

Film

s m

odul

e

•C

ham

ber c

ondi

tioni

ng•

Waf

er p

lace

men

t•

Film

agi

ng•

Met

rolo

gy o

f thi

n a-

C

12©

2007

Spa

nsio

n, In

c.

�Chal

lenges

:�T

emper

ature

inst

abili

ty !

WTW

var

iation (

1st

pai

r &

6-p

air

effe

cts)

!Can

lea

d t

o F

ICD

and lin

e or

conta

ct r

esis

tance

var

iation.

�Im

pro

vem

ents

:�N

ew c

ham

ber

sea

sonin

g�E

limin

atin

g c

ham

ber

idle

-tim

e diffe

rence

bet

wee

n w

afer

s.

Cha

mbe

r tem

pera

ture

inst

abili

ty !

WTW

var

iatio

n

1st p

air a

nd 6

-pai

r effe

ct

4500

4700

4900

5100

5300

5500

05

1015

2025

30

pair

thk

prei

ous

clea

nNe

w G

O+6

x cl

ean

6-p

air

1st

pair

+500

A

Targ

et

-500

A

13©

2007

Spa

nsio

n, In

c.

Waf

er p

lace

men

t im

pact

on

WTW

NU

�Wafe

r pla

cem

ent

can im

pact

dep

rate

!th

ickn

ess

vari

atio

n !

Can

le

ad t

o F

ICD

and lin

e or

conta

ct r

esis

tance

var

iation.

Goo

d w

afer

pla

cem

ent

Poo

r waf

er p

lace

men

t

CVD2

6A si

de 2

BKM

a-C

4400

4600

4800

5000

5200

5400

Wfr-avg thk

Max

Min

avg

WTW

ran

ge

(A)

290

58 7

5 7

9 4

7

Aft

er h

and-o

ff

adju

st

Multip

le-w

afer

runs

+400

A

+200

A

Targ

et

-200

A

-400

A

-600

A

14©

2007

Spa

nsio

n, In

c.

Film

agi

ng -

time-

depe

nden

ce o

f k

�Ext

inct

ion c

oef

fici

ent

dec

reas

es a

s fu

nct

ion o

f tim

e w

hile

index

, th

ickn

ess

rem

ain c

onst

ant.

1.73

1.74

1.75

1.76

1.77

1.78

1.79

Index avg

05

1015

Ela

psed

Day

s

Biv

aria

te F

it of

Inde

x av

g B

y El

apse

d D

ays

4800

4900

5000

5100

5200

Thk avg

05

1015

Ela

psed

Day

s

Biv

aria

te F

it of

Thk

avg

By

Elap

sed

Day

s

Arbitrary units

0.05

10.

052

0.05

30.

054

0.05

50.

056

0.05

70.

058

0.05

90.

060.

061

Ext Coef avg

05

1015

Ela

psed

Day

s

Biv

aria

te F

it of

Ext

Coe

f avg

By

Elap

sed

Day

s

Arbitrary units

Arbitrary units

15©

2007

Spa

nsio

n, In

c.

Film

agi

ng -

SIM

S &

FTI

R d

ata

�SIM

S:

Oxy

gen

incr

ease

s ov

er t

ime;

3X t

he

origin

al lev

el a

t 144 h

rs.

�FT

IR:

C=

O, O

-H (

wat

er)

conte

nts

incr

ease

with t

ime

0010

020

030

040

050

060

070

080

0

0010

020

030

040

050

060

070

080

010

14

1015

1016

1017

1018

1019

1020

0hrs

vs

24hr

s vs

48h

rs v

s 72

hrs

vs 1

44hr

sO

xyge

n &

Sili

con

& A

MU

19 (1

8 OH

)

DE

PTH

(nm

)

O, Si INTENSITY (arbitrary units)

O

Si

0hrs

O Si

24hr

s

O Si

48hr

s

O

Si

72hr

s

O

Si

144h

rs

-0.0

00

0.0

01

0.0

02

0.0

03

0.0

04

0.0

05

0.0

06

0.0

07

0.0

08

0.0

09

0.0

10

0.0

11

Abs

100

0

150

0

200

0

250

0

300

0

350

0

cm-1

C=O

risin

gw

/ tim

e

144h

rs72

hrs

48hr

s24

hrs

6hrs

4hrs

C-H

stre

tch

C-C

stre

tch

C-H

bend

O-H

(from

wat

er)

16©

2007

Spa

nsio

n, In

c.

�No

impa

ct o

n lit

ho, e

tch

seen

due

to fi

lm a

ging

(up

to 2

-wee

k qu

eue

time)

.

Film

agi

ng �

Lith

o / E

tch

impa

ct

afte

r lit

ho

afte

r et

ch

0.95

0.96

0.97

0.98

0.991

1.01

1.02

1.03

1.04

1.05

Normalized DICD

old

std

a-C

Nor

mal

ized

DIC

D

Tim

e bef

ore

SiO

Nca

p2 w

ks6 h

rs0.

95

0.97

0.99

1.01

1.03

1.05

1.07

1.09

FICD - normalized

old

std

a-C

Nor

mal

ized

FIC

D

2 w

ks6 h

rs

17©

2007

Spa

nsio

n, In

c.

Thin

a-C

met

rolo

gy (1

)

•Fi

lm th

ickn

ess

mea

sure

d in

line

with

opt

ical

thic

knes

s m

etro

logy

tool

.•

Stan

dard

met

rolo

gy re

cipe

1 is

uns

tabl

e at

low

thic

knes

s, g

ivin

gw

rong

resu

lt.•

Cor

rect

targ

etin

g re

quire

s m

ore

relia

ble

reci

pe.

Thic

knes

s vs

. rec

ipe

0

500

1000

1500

2000

2500

3000

3500

4000

12

34

Waf

er

Thickness (A)

t avg

t_24

8t_

193

thk_

BB

~ 40

0A

~

800A

~150

0A

~20

00A

Rec

ipe

1R

ecip

e 2

Rec

ipe

3R

ecip

e 4

Met

rolo

gy

~ 50

0A

~

100

0A

~150

0A

~

2000

A

18©

2007

Spa

nsio

n, In

c.

y =

81.2

03x

- 174

.95

R2 = 0

.999

x =

0.01

2314

8y +

2.1

5

0

100

200

300

400

500

600

700

800

900

1000

02

46

810

12

Dep

time

Thickness (A)

t avg

t_24

8

t_19

3

thk_

BB

Line

ar (t

hk_B

B)

scal

e ad

just

ed

Rec

ipe

1R

ecip

e 2

Rec

ipe

3R

ecip

e 4

Met

rolo

gy

Line

ar rc

p4

y =

81.2

03x

- 174

.95

R2 =

0.9

99

0

1000

2000

3000

4000

5000

6000

05

1015

2025

30

Dep

time

Thickness (A)

t avg

t_24

8t_

193

thk_

BB

Line

ar (t

hk_B

B)

Rec

ipe

1R

ecip

e 2

Rec

ipe

3R

ecip

e 4

Met

rolo

gy

Line

ar rc

p4

Thin

a-C

met

rolo

gy (2

)

•R

ecip

e 4

test

ed, h

as g

ood

linea

rity.

•Po

wer

ram

ping

dur

ing

first

~2

seco

nds

to a

void

arc

ing.

RF Power (arb. Units)

19©

2007

Spa

nsio

n, In

c.

Cha

lleng

es o

f usi

ng a

-C �

Inte

grat

ion

conc

erns

•B

ump

defe

cts

•A

dhes

ion

of S

iON

cap

on a

-C•

Rew

ork

conc

erns

•R

ewor

k se

nsiti

vity

of S

iON

cap

film

20©

2007

Spa

nsio

n, In

c.

Bum

p de

fect

s -S

EM

•M

ost b

umps

are

0.4

-0.6

um.

•XS

EM !

deco

ratio

n de

fect

s

21©

2007

Spa

nsio

n, In

c.

Bum

p de

fect

s �

Impa

ct o

f cle

anin

g to

ol /

reci

pe

•B

acks

ide

clea

n co

mpa

rabl

e to

no

clea

n.•

Who

le w

afer

cle

an (s

pray

�SP

M/A

PM) w

orse

.•

Who

le w

afer

cle

an (s

ink

�SP

M/A

PM)w

orst

.

453

438

(no

clus

ter)

43

66

Sink

Bac

ksid

e cl

ean

211

1

1853

101

Spra

y cl

ean

no c

lean

77

•D

iffer

ent t

ool s

et

elim

inat

es b

umps

15

Bac

ksid

e cl

ean

No

clea

n

22©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

�Ad

hesi

on (1

)

•A

dhes

ion

of a

-C to

sub

stra

tes

is s

tron

g.–

a-C

film

adh

eres

wel

l to

vario

us s

ubst

rate

s.

Sam

ple

Expe

cted

Fra

ctur

e to

ughn

ess

Kap

p M

Pa

m1/

2R

ank

AC

1 o

n Si

0.3

< Ki

c <

0.5

VER

Y G

OO

DA

C 2

on

Si0.

3 <

Kic

< 0.

5V

ERY

GO

OD

AC

3 o

n Si

>=0.

6E

XC

ELLE

NT

AC

1 o

n PE

CVD

oxi

de0.

3 <

Kic

< 0.

5V

ERY

GO

OD

AC

1 o

n Po

ly0.

3 <

Kic

< 0.

5V

ERY

GO

OD

AC

1 o

n fu

rnac

e ni

tride

0.3

< Ki

c <

0.5

VER

Y G

OO

DA

C 1

on

furn

ace

oxid

e0.

3 <

Kic

< 0.

5V

ERY

GO

OD

AC

1 o

n th

erm

al o

xide

0.3

< Ki

c <

0.5

VER

Y G

OO

DA

C 2

on

furn

ace

nitri

de>0

.35

VER

Y G

OO

DA

C 2

on

PEC

VD n

itrid

e>0

.35

VER

Y G

OO

D

Adh

esio

n da

ta fr

om m

ELT

tech

niqu

e

23©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

�Ad

hesi

on (2

)

•A

dhes

ion

of a

-C to

SiO

Nca

p de

pend

s on

�

–Si

ON

film

–A-

C fi

lm

–qu

eue

time

•Po

tent

ial d

efec

tivity

issu

e, c

ritic

al fo

r im

mer

sion

lith

ogra

phy.

Sam

ple

Expe

cted

Fra

ctur

e to

ughn

ess

Kap

p M

Pa

m1/

2R

ank

AC

1 +

SIO

N 3

0.09

< K

app<

0.15

PO

OR

AC

1 +

SiO

N 6

0.09

< K

app<

0.15

PO

OR

AC

1 +

SiO

N 2

0.2

< Ka

pp<0

.3G

OO

D

Sam

ple

Expe

cted

Fra

ctur

e to

ughn

ess

Kap

p M

Pa

m1/

2R

ank

AC

1 +

SiO

N 2

0.2

< Ka

pp<0

.3G

OO

DA

C 3

+ S

ION

2~0

.1P

OO

RA

C 4

+ S

ION

2

>0.3

5VE

RY

GO

OD

Sam

ple

Expe

cted

Fra

ctur

e to

ughn

ess

Kap

p M

Pa

m1/

2R

ank

AC

1 +

SiO

N 2

0.2

< Ka

pp<0

.3G

OO

DA

C 1

+ S

iON

2 (f

resh

)>

0.3

VER

Y G

OO

D

24©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

�Ad

hesi

on (3

)•

Adh

esio

n of

a-C

to S

iON

cap

depe

nds

on �

–Si

ON

depo

sitio

n co

nditi

on

Sam

ple

Expe

cted

Fra

ctur

e To

ughn

ess

Kap

p (M

Pa

m1/

2 )R

ank

AC

1 +

SiO

N 2

0.2

< K

app<

0.3

GO

OD

AC

1 +

SIO

N 2

.10.

09 <

Kap

p<0.

15PO

OR

AC

1 +

SIO

N 2

.20.

09 <

Kap

p<0.

15PO

OR

AC

1 +

SIO

N 2

.20.

09 <

Kap

p<0.

15PO

OR

AC

1 +

SiO

N 6

0.09

< K

app<

0.15

POO

RA

C 1

+ S

ION

6.1

0.09

<K

app<

0.15

POO

RA

C 1

+ S

ION

6.2

0.09

<K

app<

0.15

POO

RA

C 1

+ S

ION

6.3

0.09

<K

app<

0.15

POO

R

AC

1 +

SIO

N 3

0.09

< K

app<

0.15

POO

RA

C 1

+ S

ION

3.1

0.09

<K

app<

0.15

POO

RA

C 1

+ S

ION

3.2

0.09

<K

app<

0.15

POO

RA

C 1

+ S

ION

3.3

0.09

<K

app<

0.15

POO

R

AC

3 +

SIO

N 2

~0.1

PO

OR

AC

3 +

SIO

N 2

.1<0

.09

VER

Y P

OO

RA

C 3

+ S

ION

2.2

0.1<

Kic

<0.3

5G

OO

DA

C 3

+ S

ION

2.3

>0.3

5V

ERY

GO

OD

25©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

(Adh

esio

n 4)

•A

dhes

ion

of S

iON

to a

-C d

ue to

que

ue ti

me

betw

een

a-C

& S

iON

dep.

–su

rfac

e &

film

oxi

dize

d –!

Si-C

bon

ding

site

s re

duce

d !

poor

er a

dhes

ion

–!

imm

ersi

on li

tho

conc

ern.

0010

020

030

040

050

060

070

080

0

0010

020

030

040

050

060

070

080

010

14

1015

1016

1017

1018

1019

1020

0hrs

vs

24hr

s vs

48h

rs v

s 72

hrs

vs 1

44hr

sO

xyge

n &

Sili

con

DE

PTH

(nm

)

O, Si INTENSITY (arbitrary units)

O

Si

0hrs

O Si

24hr

s

O Si

48hr

s

O

Si

72hr

s

O

Si

144h

rs

-0.0

00

0.0

01

0.0

02

0.0

03

0.0

04

0.0

05

0.0

06

0.0

07

0.0

08

0.0

09

0.0

10

0.0

11

Abs

100

0

150

0

200

0

250

0

300

0

350

0

cm-1

C=O

risin

gw

/ tim

e

144h

rs72

hrs

48hr

s24

hrs

6hrs

4hrs

C-H

stre

tch

C-C

stre

tch

C-H

bend

O-H

(from

wat

er)

26©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

-re

wor

k

•A

-C e

ncap

sula

ted

by S

iON

on b

evel

.–

Con

cern

: a-

C w

ill b

e re

mov

ed/u

nder

cut

durin

g lit

ho re

wor

k !

defe

ctiv

ityfr

om

flaki

ng o

f rem

aini

ng S

ION

.–

XSEM

& A

ES v

erifi

ed g

ood

enca

psul

atio

n of

a-C

by

SiO

N.

150A S

iON

/300A a

-C

50A S

iON

/< 5

0A a

-C

tr

ace

SiO

N/

no a

-C

05

1015

2025

3035

400102030405060708090100

0286

_3_1

.pro

Sput

ter T

ime

(min

)

Atomic Concentration (%)

Si2

N1.

ls1

O1.

ls1

C1.

ls1

Nom

inal

etc

h ra

te is

25A

/min

ute.

SiO

N|

aC|

SiN

| SiO

05

1015

2025

3035

400102030405060708090100

0286

_3_2

.pro

Sput

ter T

ime

(min

)

Atomic Concentration (%)Si

2C

1.ls

1N

1.ls

1O

1.ls

1

SiO

N|a

C|

SiN

| S

iO

05

1015

2025

3035

400102030405060708090100

0286

_3_3

.pro

Sput

ter T

ime

(min

)

Atomic Concentration (%)

Si2

C1.

ls1

N1.

ls1

O1.

ls1

SiO

N|

SiN

| SiO

front

edge

back

Bev

el A

rea

front

edge

back

27©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

(rew

ork

2)

•R

ewor

k da

mag

e du

e to

SiO

Npi

n ho

les

or S

iON

/a-C

st

ep c

over

age

–If

exis

t, Si

ON

pin

hole

s !

a-C

und

ercu

t dur

ing

rew

ork

as a

-C, l

ike

phot

ores

ist,

is re

mov

ed b

y re

wor

k pr

oces

s (O

2 as

h).

–R

ewor

k te

sts

on b

lank

et S

iON

on a

-C h

as d

etec

ted

no s

uch

defe

cts

–If

ther

e is

topo

grap

hy, i

ntrin

sica

lly lo

w s

tep

cove

rage

of a

-C a

nd

SiO

Nfil

m w

ould

lead

to lo

cally

thin

/cra

cked

SiO

Nan

d ex

pose

a-C

to

atta

ck d

urin

g re

wor

k pr

oces

s.

Poly

ILD

1

a-C

SiO

NO

2 p

lasm

a

~30%

A-C

ste

p co

vera

ge

28©

2007

Spa

nsio

n, In

c.

Cha

lleng

es w

ith in

tegr

atio

n of

a-C

HM

(2)

–N

o si

gnifi

cant

cha

nge

in n

/kob

serv

ed in

line.

–

Slig

ht o

xida

tion

of S

iON

surf

ace

with

rew

ork.

–R

ewor

k te

sts

show

ed s

ame

DIC

D b

efor

e an

d af

ter r

ewor

k.

3437

.514

.913

.5H

igh

Tem

p

35.1

38.6

16.4

9.9

Std

32.6

3516

.116

.3N

one

(con

trol)

SiO

NC

Rew

ork

cond

ition

XPS

Surfa

ce R

elat

ive

Atom

ic %

Com

posi

tion

Note

: W

20 p

roce

ssed o

n

diffe

rent

day

than t

he r

est

.

Std

T |

hig

h T

| none

Sens

itivi

ty o

f res

ist t

o Si

ON

surf

ace

due

to re

wor

k?

Laye

rR

ewor

kpo

st- p

re N

post

-pre

KB

std

-0.0

010.

000

Blo

ng-0

.005

-0.0

04C

std

0.00

00.

000

Clo

ng0.

000

0.00

0D

std

tem

p-0

.002

0.00

3D

high

tem

p-0

.001

0.00

3

29©

2007

Spa

nsio

n, In

c.

Sum

mar

y

•A

mor

phou

s ca

rbon

har

dmas

kim

prov

es p

atte

rn d

efin

ition

requ

ired

for a

dvan

ced

patte

rnin

g (e

g. a

t 65n

m, 4

5nm

, 32n

m, e

tc.).

•So

me

chal

leng

es w

ith a

-C:

–M

odul

e: h

ardw

are

set u

p, p

roce

ss c

ontr

ol, m

etro

logy

, film

agi

ng–

Inte

grat

ion:

�

Def

ects

(dec

orat

ion

defe

cts)

�P

oten

tial i

ssue

s: a

dhes

ion

(!de

fect

s), r

ewor

k, fi

lm e

ncap

sula

tion.

31©

2007

Spa

nsio

n, In

c.

Trad

emar

k A

ttrib

utio

n

Sp

ansi

on, t

he S

pans

ion

Logo

and

com

bina

tions

ther

eof a

re

trad

emar

ks o

f Spa

nsio

n LL

C. O

ther

pro

duct

nam

es u

sed

in

this

pre

sent

atio

n ar

e fo

r ide

ntifi

catio

n pu

rpos

es o

nly

and

may

be

trad

emar

ks o

f the

ir re

spec

tive

com

pani

es.