advances in directly patternable metal oxides for...
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Advances in Directly Patternable Metal Oxides for EUV Resist
Andrew Grenville
EUVL Symposium 2013 Toyama, Japan
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Conventional Photoresists Stretched to the Limit
© IMEC 2010
UNDERLAYER SCREENINGProfiles for 28nm LS (Resist B)
M.GOETHALS- EUVL 2010, KOBE, OCTOBER 18, 2010
13
11.8mJ/cm228L56P
13.2mJ/cm228L56P
Standard UL(on track), 20nm
UL8 , 10nm
12mJ/cm228L56P
UL3 (on track), 10nm
12.mJ/cm2
12mJ/cm228L56P
28L56P
UL5, 10nm
UL6, 10nmUL12, 10nm
12mJ/cm228L56PDifferent Underlayer showed only minor differences in LER, and process windowsStandard UL and UL12 showed the lowest LER and reasonable PW
© IMEC 2010
Benchmarking 28nm L/S, 50nmFT
STD UL
20nm
UL310nm
RESIST A RESIST B RESIST C
15M.GOETHALS- EUVL 2010, KOBE, OCTOBER 18, 2010
14.3 mJ/cm2
LER=4.2nm12.4mJ/cm2
LER=4.2nm15.2 mJ/cm2
LER=4.3nm
14.5 mJ/cm2
LER=4.4nm12.0mJ/cm2
LER=4.6nm15.2mJ/cm2
LER=4.3nm
Resist B on std underlayer shows highest sensitivity and lowest LER
P-12
2012 International Symposium on Extreme Ultraviolet Lithography
FUJIFILM Corporation October 1, 2012
Proof of concept, high CA resist
25.0 nm L/S 22.5 nm L/S 20.0 nm L/S
50 keV point beam 40 nm film thickness
High CA polymer-B has a advantage on collapse
25.0 nm L/S 22.5 nm L/S 20.0 nm L/S Collapsed Collapsed Collapsed
FEVS-P1507D: High CA, new polymer-B
FEVS-P1293A: Low CA, conventional polymer
Resolution
Line Width Roughness
Pattern Collapse
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Patternable Metal Oxides
Goal: Design photoresists with small, inorganic building blocks
Resolution & LWR
Etch Selectivity
EUV Absorbance
Low Blur
Metal oxide clusters
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Gen 1 Materials: EUV Imaging
8 nm l/s LWR 1.5nm
10 nm l/s LWR 0.7 nm
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Inpria Generation 1 EUV Photoresists
High Developer Concentration
High Imaging Dose
Instability: shelf life and process
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Gen 1
Competing condensation and dehydration processes
10 nm l/s, 0.7 nm LWR
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New Platform Solves Key Challenges
Standard Developers
Path to required dose
Shelf stable and vacuum stable
High Developer Concentration
High Imaging Dose
Instability: shelf life and process
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Gen 1 Gen 2
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Inpria’s Patterning Mechanism
H
L*
O
O
L*
H M M O
O M M + H2O, L*
7 秘 SPC-1K5240210006 TOSHIBA Confidential
100nm 50nm 40nm 30nm
26nm 24nm 22nm 20nm
Pattern resolution check 3space pattern (750uC/cm2)
Resolution limit in 3space pattern is about 22nm. It has good resist profile around 20nm pattern.
Bake
Develop L*
O
O
L*
M M H H
Metal hydroxo clusters Dense metal oxide film
Exposure generates high solubility contrast
in developer
L* = radiation sensitive ligand
Unpatterned film
Patterned film
New molecular oxide clusters and ligand chemistries
adopted for Gen 2 materials
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18nm hp
Gen 2 E-Beam Baseline: YA Series
n-BA develop 20nm FT, ~1100µC/cm2
18nm hp
26nm hp
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Gen 2 E-Beam Baseline: YA Series
14nm hp 16nm hp
16nm hp
14nm hp
12nm hp
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0"
0.4"
0.8"
1.2"
1.6"
2"
2.4"
2.8"
3.2"
3.6"
4"
8"
10"
12"
14"
16"
18"
20"
22"
24"
26"
28"
0" 20" 40" 60" 80" 100" 120"
LWR"(nm)"
CD"(n
m)"
Shelf"Storage"at"Room"Temperature"(Days)"
Resist"ShelfClife:"CD"stability"(eCbeam)"
Day 41
Shelf-Life >3 Months @ RT
Stored at room-temperature No systematic performance degradation observed over 15 weeks
Day 2 Day 15 Day 31 Day 106
18nm hp by EB
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BMET EUV Imaging: YA Series
22nm hp
100 mJ/cm2 57 mJ/cm2
22nm hp
18nm hp 18nm hp
Dose reduced
40%
18nm dipole; Developer: n-BA Formulation & process optimization
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PSI EUV Imaging: YA Series
Organic developer, 20nm FT, 150C PEB, dose: ~90 mJ/cm2 Unoptimized process
22nm hp 18nm hp 17nm hp
16nm hp 15nm hp 14nm hp
12nm hp
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PSI EUV: TEM x-section of 22hp
Native SiO2
Pt layer for TEM
Si substrate
Inpria resist TEM x-section
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New Platform Solves Key Challenges
Standard Developers
Path to required dose
Shelf stable and vacuum stable
High Developer Concentration
High Imaging Dose
Instability: shelf life and process
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Gen 1 Gen 2
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Ligand Selection Key Lever
~100x gain in radiolytic efficiency
Radiolytic efficiency modulated as predicted by chemistry of ligand sequence. Demonstrates control over an important component of improving sensitivity.
Liga
nd R
elat
ive
Con
cent
ratio
n*
Relative Exposure
Ligand 1
Ligand 2
Ligand 3
* Relative FTIR absorbance
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Path to Improved Sensitivity
Standard Developers
Stability
ü Remove background condensation from development rate equation
• High EUV absorbance, tunable M-L radiolysis platform to maximize or amplify photo-efficiency
• Leverage strength of polarity change/solubility on oxide formation to limit threshold dose
Have stable, fab compatible platform: critical baseline for testing design modifications
Maximum Sensitivity
High Imaging
Dose
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New Platform Solves Key Challenges
Standard Developers
Path to required dose
Shelf stable and vacuum stable
High Developer Concentration
High Imaging Dose
Instability: shelf life and process
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Image Fidelity (res & LWR)
Etch Resistance
High EUV absorbance
Gen 1 Gen 2
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Typical EUV Litho Module
• Thick Spin On Carbon (SOC) often required for device stack • Opening the SOC requires use of Si-HM (thickness/selectivity) • Drives higher aspect ratio resist: can lead to pattern collapse
SOC
Si-HM
CA Resist
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Simplified EUV Pattern Transfer
• Process simplification – Need <20nm of resist – mitigates pattern collapse – Eliminates need for Si-HM: reduces coat/etch steps – Allows higher SOC thickness
SOC
Inpria Resist
SOC
Si-HM
CA Resist
>38:1 selectivity to SOC using
O2:N2 open
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Spin-On-Carbon Open
20 nm lines
High selectivity provides large process window for SOC open
20nm Inpria Resist
100nm SOC
EB expose, no hard bake O2:N2 etch
35 nm lines
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Pattern Transfer & Resist Strip
O2:N2 (300W) C4F8:Ar (35W) After O2 (10W)
Resist consumed during etch
Inpria Resist 20nm
SOC 50nm
Si
Si etch SOC strip SOC open
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Summary • New metal oxide resist platform developed
– High resolution (12nm hp by EB) – Improved dose – Stable – Compatible with standard developers
• High etch selectivity and pattern transfer demonstrated
• Path identified to improved sensitivity and contrast
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Acknowledgements
Thanks to our many partners, and also to the Inpria team
This material is based upon work supported by the National Science Foundation under SBIR Award Number 1026885