ageing … eric kajfasz (cppmarseille) d0 workshop, beaune, june 17, 2003 dØsmt

DDAgeing …Ageing …

Eric Kajfasz (CPPMarseille)

D0 Workshop, Beaune, June 17, 2003

DØSMTDØSMT

D0 Workshop 06/17/03 E. Kajfasz 2

DD D0SMT ageing ...

‘’HDI’’ failures:Limited access => ‘’HDI’’ means [Low Mass Cable + HDI + chips]

Excess Noise:Usual noise between 1.5 and 3 ADC countsExcess noise seem to affect only Micron F-Wedges

IrradiationDetector was built to sustain 2 fb-1

F11-1-2

Example of a worst case


DD SMT Design

6 Barrels12 F-Disks

4 H-Disks

Barrels F- Disks H- Disks

Channels 387072 258048 147456

Modules 432 144 96

Si Area 1.3 m2 0.4 m2 1.3 m2

I nner R 2.7 cm 2.6 cm 9.5 cm

Outer R 9.4 cm 10.5 cm 26 cm

South1/2-cylinder

North1/2-cylinder

F-Disks sensor vendors: # 3,5,8 and 10: Eurysis 8 others: Micron


DD

HDI

Low Mass Cables

Pigtail

LadderSouth Half Cylinder

3 (F-Disk+Barrel) modules

3 forward F-Disks

SVXII R/O chips


DD Conclusions ...80/3M+CLK cables

Adapter card

Low-mass+CLK cables½-cylinder


DD~19’-30’ High Mass Cable

(3M/80 conductor)

Serial Command Link

CathedralCathedral

Interface

Board

Crates

(8x18)

8’ Low Mass Cables

3/6/8/9 Chip HDI

Sensor

CLKs

Horse ShoeHorse Shoe

3/6/8/9 Chip HDI

Sensor

Ad

ap

tor

ca

rd

25’ High Mass Cable (3M/50 conductor)

CLKs

IB

MCH2MCH2

V

R

B

C

SBC

V

R

B

PwrPC

MonitoringSDAQ PDAQ (L3)

VRBCrates(12x10)

PlatformPlatform

SEQ

SEQController

Optical Link1Gb/s

Sequencer Crates (6x20)

VTM

Around Iteraction RegionAround Iteraction Region

CLKs

MCH3MCH3

PwrPC

1553

PowerPCs and Single Board Computers are accessed thru Ethernet

MCH2MCH2

PwrPC

HV

mod

HV Crates

(8x6+2x4)

CathedralCathedral

FusePanel

Bulk LVPower Supplies

HVfanout1=>4

HVbreakout

box

VMECrates(4x3)

25 twisted pair cables

17 twisted pair cables

HVLV

I,V

,T M

onit

orin

g


DD HDI failures

% disabled HDI s vs time

0

2

4

6

8

10

12

14

16

18

20

06/ 20/ 01 01/ 06/ 02 07/ 25/ 02 02/ 10/ 03 08/ 29/ 03

calibration date

% d

isa

ble

d

ladders F-wedges H-wedges

B1

6/72 = 8 %

B3

15/72 = 21 %

B2

7/72 = 10 %

B4

6/72 = 8 %

B6

7/72 = 10 %

B5

10/72 = 14 %

Would not bet my shirt onan extrapolation of these …


DD HDI failures

Device Failures vs Time

0

5

10

15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19 21 23 25 27

Month of Operation

# o

f F

ailu

res

Ladders F wedges H wedges

Jan,2003Shutdown

Oct-Nov,2001 Shutdown

May,2001Installation complete

June,2002Shutdown

HDI Failure Modes

0 20 40 60 80

Bias problem

AVDD(2) trip

DVDD high/trip

No download

Bad readout

# of failures (inclusive)


DD Effects on physics …

Take with a grain of salt … these are run IIb studies


DD Noise in North Barrels…

Usual noise between 1.5 and 3 ADC countsLook at the fraction of channels with a noise above 4 or 10 ADC counts

B1: p-side % channels > 4 ADC

0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p

B1: n-side % channels > 4 ADC

0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L3&4-n L7&8-n


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-n L3&4-n L5&6-n L7&8-n


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-n L3&4-n L5&6-n L7&8-n

OK

10/01/2001 05/15/2003


DD Noise in South Barrels… B4: p-side % channels > 4 ADC

0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-n L3&4-n L5&6-n L7&8-n


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-n L3&4-n L5&6-n L7&8-n


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L1&2-p L3&4-p L5&6-p L7&8-p


0

5

10

15

20

25

130000 140000 150000 160000 170000 180000

L3&4-n L7&8-n

OK

10/01/2001 05/15/2003


DD Noise in F-disks …

p-side % channels > 4 ADC

0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F1 F2 F3 F4 F5 F6

n-side % channels > 4 ADC

0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F1 F2 F3 F4 F5 F6


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F7 F8 F9 F10 F11 F12


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F7 F8 F9 F10 F11 F12

NOTOKFor

Micron wedges

10/01/2001 05/15/2003


DD Noise in F-disks …

NOTOKFor

Micron wedges


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F1-p F2-p F3-p F4-p F5-p F6-p


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F1-n F2-n F3-n F4-n F5-n F6-n


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F7-p F8-p F9-p F10-p F11-p F12-p


0

5

10

15

20

25

30

35

40

45

50

130000 140000 150000 160000 170000 180000

F7-n F8-n F9-n F10-n F11-n F12-n

10/01/2001 05/15/2003


DD Noise H-disks …

~ OKBut keep an eye on them …

10/01/2001 05/15/2003


DD Irradiation …

Main effects of irradiation:(see R. Lipton, D0note-4077 for details):

Increase of leakage current Increase in shot noise Not the show stopper.

Increase in trapped and surface charges in insulating layers

lowered threshold for junction breakdown (micro-discharges)Expect to limit the lifetime of Micron detectors

Change in effective impurity concentration:Remove donors and form acceptors in bulk siliconn-type inverts to p-type after about 300 KRadsDepletion voltage decreases until inversion, then increases with dose.This in turn induces:

coupling capacitor breakdownmicro-discharges

SVX

SVX

polysiliconresistors

+HV

- HV

n-side

p-side

coupling capacitors

AVDD

AVDD2

DVDD

HDI

sensor

DATA


DD Irradiation …V

dep (

V)

Dose (Mrads)

Nois

e (

AD

C)

Nois

e (

AD

C)

Dose (Mrads)

Voltage (V)

# b

roken

capaci

tors

Bias Voltage (V)

Coupling Capacitors Breakdown

@ 2.1 MRads

2fb-1 @ layer 1


DD Conclusion: Diamonds (not Silicon) Are Forever!

HDI failures:Difficult to conclude on a real trend:

Anywhere between 13 and 100% disabled channels by 2009Following months will help us understand a bit more how it goes

Increasing Excess Noise:With present trend:

Seem to affect Micron F-wedges onlySome (large?) fraction of these wedges will become useless in the next few years

Irradiation (R. Lipton, D0note-4077)Significant loss of channels in layers 1&2 above 3.6 fb-1

(Vd=150V) All channels in layers 1&2 dead above 4.9 fb-1 (Vd=200V)

Wise thoughts of the day:Need Run IIa MC studies to better understand effect on physicsBecause of all of the above, it is very risky to count on SMT to behave sufficiently well by 2009, not to impede our physics programBuild the upgrade, if we have the funding to do so

ageing … eric kajfasz (cppmarseille) d0 workshop, beaune, june 17, 2003 dØsmt

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