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ALD picosun general introduction

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Page 1: ALD Introduction Picosun Ald Review

7/21/2019 ALD Introduction Picosun Ald Review

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Picosun Oy Proprietary

Picosun

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland

4. Thin film materials and applications

5. SUNALE™ ALD process tools6. Co-operation partners

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Picosun Worldwide

North AmericanHeadquarters

Picosun USA

Detroit, USA

Main Headquarters

Picosun Oy

Tietotie 3, 02150 Espoo, Finland

Factories: Kirkkonummi, Finland

Resales – Spain & Portugal

IZASA S.A.

Alcobendas, Spain

Resales – India

Specialise InstrumentsMarketing Company

Resales – Taiwan

Dual Signaltech

Omega Scientific

Resales – China

Beijing Honoprof

Cross-Tech Development Co., Ltd.

Resales – Japan

Altech Alt Co., Ltd.

Resales – Israel

B.G. Technical Support Ltd.

Resales – Russia

Scientific Equipment Ltd.Resales – France,Germany, UK, Ireland

EURIS

Resales – Italy

Nordtest Srl

Worldwide OEM agreement

Omicron Nanotechnology

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Picosun Backgound

Background

Picosun Oy (Ltd) established in 2003

Pioneering ALD experience since 1974

A recognized need for an entry level ALD reactor and straight-forward transitionfrom R&D to production discovered

Mission

High quality R&D and production ALD tools for world wide markets

Stephen Industries Inc Oy is committed to the development of this kind of new

dimension of ALD technologyPresent situation

Picosun Oy manufactures SUNALE™ R- and P-series ALD process tools fornanotechnology applications

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Picosun Board of Directors

Board of Directors Ph.D. Tech. Tuomo Suntola, The inventor of ALD method

Professor, Ph.D Tech. Lauri Niinistö, one of the key persons in developing AtomicLayer Deposition processes and applications in Academia since late 1970s

Professor, Ph.D Jorma Routti, one of the founders of Finnish venture capital andone of Europe's leading technology experts

Picosun CEO, Kustaa Poutiainen

Picosun Managing director, Juhana Kostamo

Picosun CTO, Sven Lindfors

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The Inventor of ALD

The head of SEMI organization President and CEO Stanley T. Myers (left)presents the European SEMI 2004 award to Dr. Tuomo Suntola (right) at

Semicon Europa 2004 exhibition in Munich.

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Atomic Layer Deposition

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland

4. Thin film materials and applications

5. SUNALE™ ALD process tools

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Deposition Conditions

Deposition temperature

100 °C 200 °C 300 °C 400 °C 500 °C

Typical temperature

Sensitivesubstrates

Processes requiringa lot of activation energy

•Typical deposition pressure is 1 – 10 hPa (mbar)

•Substrate is heated to a selected deposition temperature

•Deposition pressure is adjusted with inert carrier / purge gas (N2 or Ar)

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Introduction of Precursors into

Reaction Chamber

Pulse A Purge Pulse B PurgeStep 1 Step 2 Step 3 Step 4

Precursor A

Precursor BInert gas

Pulsing cycle

Precursor sourcesReaction space Vacuum pump

Inert gas

3

2 4

1

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Step 1: Metal Precursor TMA is

Pulsed to the Reaction Space

OH OH OH OH OH OH

Al

CH3CH3

CH3

Surplustrimethyl aluminum (TMA)molecule

Trimethyl aluminum (CH3)3Al molecules react with the –OH groups on the substrate surface.

Chemisorption

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Step 2: The Reaction Chamber is

Purged with Inert Gas (e.g. N2)

O O

AlAl Al

CH3

C

H

HH

H

Surplus TMA molecules and methane CH4 moleculesreleased from surface reactions leave the reaction space.

O O O O

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Step 3: Non-metal Precursor H2O

is Pulsed to the Reaction Space

Chemisorption

O O O O O O

AlAl Al

CH3

O

H

H

Surplus water molecule

H2O molecules react with the TMA molecule fragmentsattached to the substrate surface.

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Step 4: The Reaction Chamber is

Purged with Inert Gas (e.g. N2)

O O O O O O

AlAl Al

OHOHOHOH

OH OH

Al

C

H

H H

H

Surplus H2O molecules and methane CH4 molecules releasedfrom the surface reactions leave the reaction space.

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Growth of Thin Film by Repeating

a Pulsing Cycle

O O O O O O

AlAl Al

OHOHOHOH

OH OH

Al+ 1 Å / cycle

Pulse A Purge Pulse B Purge

Repeat 1...n times

Heating Cooling

100 cycles 10 nm

(1 nm = 10 Å)

1000 cycles 100 nm

Linear growth

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ALD Film Growth Rate Vs.

Deposition Temperature

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Characteristic ALD

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ALD Precursors

_

Zr

O

C(CH3)3

C(CH3)3

O

4

_

Cl

Zr

Cl

Cl ClZr O

CH3

CH3

CH3H3C CH3Zr

4

Al

CH3

CH3 CH3

Inorganic Metalorganic Organometallic

Metal Halides:M−F, M−Cl, M−Br, M−I

Metal alkoxidesMetal β-diketonates

Metal dialkylamidosMetal amidinates

Metal alkyls

Metal cyclopentadienyls

Adv:

Thermal stabilityReactivity

Molecule size

Disadv:

By-productsVapor pressure

Adv:

Vapor pressure

Disadv:

Thermal stabilityReactivityMolecule size

Adv:

ReactivityThermal stabilityBy-productsVapor pressure

Disadv:

Availability

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Reactor Flow-type

Cross-flow ReactorPerpedicular flow Reactor”showerhead”

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Poisoning of Reactive Sites

By-products: ∼1014 molecules/cm2 vs. Precursor: ∼1017 molecules/pulse (0.5 mg/ 0.1 s pulse)K.-E. Elers, T. Blomberg, M. Peussa, B. Aicthison, S. Haukka, S. Marcus: Film Uniformity in Atomic Layer Deposition / Chem. Vap.

Deposition , 12 (2006) 13.

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Advantages of ALD

• Excellent film uniformity even on large substrates• Unique film step coverage compared to any other deposition technique

• Molecular range film thickness control due to self limiting growth mechanism

Amorphous aluminum oxide Al2O3

Mikrokemia Oy / University ofHelsinki

Polycrystalline strontium titanate SrTiO3

Insulator with a high dielectric constantUniversity of Helsinki

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Advantages of ALD

• Wide range of film materials available

• Highly repeatable film thickness• Extremely accurate composition control of mixed oxides, graded

layer and nanolaminates• Generally deposited films have less impurities than the films made

by other deposition techniques at the same deposition temperature• High density and low impurity level of the films enable excellent

physical and chemical properties• Lower deposition temperature can be used for sensitive substrates

than in CVD technique• Easy technique for wafer batch processing

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ALD in Finland

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland

4. Thin film materials and applications

5. SUNALE™ ALD process tools6. Co-operation partners

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Milestones of ALD in Finland

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Early ALD Reactors

Sven Lindfors and his ALD reactor in 1978

E l f ALD R

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Examples of ALD Reactors

Designed in Finland

F-950 ALD reactor

Microchemistry Ltd.Developed in 1990’sfor flat panel production

PULSAR™ 2000/3000 ALD reactors

designed by Microchemistryowned by ASM International, Inc

MC 120 CAT ALD reactor

Acquired by Picosun OyDeveloped in early 1990’sfor R&D of heterogeneouscatalysts (e.g. US6534431)

E l f ALD R t

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Examples of ALD Reactors

Designed in Finland

SUNALE™ ALD process tools from Picosun

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Materials and Applications

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland

4. Thin film materials and applications

5. SUNALE™ ALD process tools

6. Co-operation partners

E l f Thi Fil M t i l

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Examples of Thin Film Materials

Deposited with ALD• Metal nitrides e.g. TiN, NbN- wear-resistant coatings

- diffusion barriers- superconductor

• Metal oxides e.g. Al2O3, TiO2, SnO2, ZnO, HfO2- coatings against corrosion (nanolaminates)- diffusion barriers- gas sensors

- capacitors for integrated cicuits- gap fill in read heads for hard disks- thin films for optics

• Metals e.g. Ru, Ir, Pt- electrical conductors- nucleation and adhesion layers- metallization in integrated circuits • Metal sulfides e.g. ZnS

• - light emitting materials

Typical thickness of a thin film depending on an application 1 nm – 100 nm

I t l i d ith

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polysilicon

k ≅ 9 (HfSiOx:N) ?

Reference: Solid State Technology, November 2007

transistor

Intel microprocessors made with

45 nm design features

Al O grown by ALD from TMA

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Electrical breakdown strength is9 - 10 MV / cm

90 – 100 V / 100 nm0.9 – 1.0 V / nm

Atomic Layer Deposition of AlOx for Thin Film Head Gap ApplicationsJ. Electrochem. Soc., Volume 148, Issue 9, pp. G465-G471 (September 2001)Ajit Paranjpe, Sanjay Gopinath, Tom Omstead, and Randhir Bubber

Hitachi Global Storage Technologies

TDK10 - 20 nm

Al2O3 grown by ALD from TMA

and H2O

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Al2O3 and ZnO and is proposed for use as charge dissipative layers

HERRNLANN Cari F. ; DELRIO Frank W. ; MILLER David C. ; GEORGE Steven M. ; BRIGHTVictor M. ; EBEL Jack L. ; STRAWSER Richard E. ; CORTEZ Rebecca ; LEEDY Kevin D. ;Sensors and actuators. A, Physical (Sens. actuators, A Phys.) ISSN 0924-4247Source / Source2007, vol. 135, no1, pp. 262-272

Large Force Electrostatic MEMS Comb DriveMEMS actuator

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SUNALE™ ALD Process Tools

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland

4. Thin film materials and applications

5. SUNALE™ ALD process tools

6. Co-operation partners

SUNALE™ ALD Process Tool

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SUNALE™ ALD Process Tool

Features• Extremely versatile processing capabilities

packed in compact, handy and lightweight

structure• Highly customizable reactor structure with

variety of source, reaction chamber andwafer transfer options

• Uniform and ultra-conformal film depositionon 2-8’’ planar substrates, 4’’ wafer batches(25 wafers), 3D objects, powders andthrough porous substrates

• Process temperatures up to 500°C• Precursor sources for gaseous, liquid and

solid chemicals. Heated precursor sourcetemperature up to 200°C.

SUNALE™ ALD Process Tool

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SUNALE™ ALD Process Tool

Features

• Up to six precursor sources allow widevariety of processes from basic oxidesand nitrides to advanced nanolaminatesand graded layers

• Professional ALD software installed inuser-friendly touch panel PC• Optional substrate loader, vacuum

pump, ozone delivery system andnitrogen generator can be bought

together with the ALD process tool

SUNALE™ ALD Process Tool

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SUNALE™ ALD Process Tool

Precursor Source Options• Picosolid™ Basic heated source system for low vapor

pressure liquids and solids• Picosolid™ Booster heated source system for very low

vapor pressure liquids and solids• Picohot™ heated source system for low vapor

pressure liquids• Picosolution™ source for high vapour pressure liquids

• Picosolution™ source system with ventilated cabinet• Picozone™ ozone delivery system• Picogases™ source system with ventilated cabinet• Picogases ™ connection

• Hot feed-throughs into theprocess chamber

• Rising temperature profile• High-speed ALD valves• Efficient purging

SUNALE™ ALD Process Tool

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SUNALE ALD Process Tool

Loader Options• Picoloader™ Lift pneumatic elevator• Picoloader™ Handyman manual loader with a load

lock and a gate valve• Picoloader™ Semi-Pro automatic loader with a load

lock and a gate valve• Picoloader™ Autopilot cassette-to-cassette loader• Customized systems integrated with UHV cluster tools

and robots

Picoloader™ Semi-Pro automatic loader

SUNALE™ ALD Process Tool

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SUNALE ALD Process Tool

Software and Electronics Options• Basic entry-level software and electronics for 2

sources operated with a touch panel PC• Advanced multisource software and electronics for up

to 6 sources operated with a touch panel PC• Separate control cabinet electronics system and a

touch screen for customized multisource systems

• High-precision control of pulse timings• Recipes for nanolaminates and graded layers• Integrated pulse monitor• Data storage and export/import options on CF for

recipes and trend charts• Standard electronics components for easy

maintenance

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Heated source for solid and liquid precursors- Integrated particle filter for solid powders- Replaceable cartridge for powder and liquids inside the source (no need to

disassemble the source between different precursors)

Gas flow perpendicular to the substrate[i], [ii]

- Enables uniform film deposition with challenging precursor chemistries- Enables higher growth rate than tangential flow (cross-flow) reactor

Isolated reaction chamber mounted inside a vacuum chamber- Metal-metal sealing surface and pressure control keeps all process gases inside the

reaction chamber and no condensation occurs in the vacuum chamber walls- Ensures that no corrosion occurs on the vacuum chamber walls- No maintenance needed for the vacuum chamber- Makes easy maintenance for the reaction chamber

Hot-wall reaction chamber

- The walls are at the same temperature as the substrate- Prevents secondary reaction routes inside the reaction chamber that would result in

the loss of self-limited growth mechanism of ALD- Ensures the best particle performance and long maintenance cycles

Four separate source lines and inlets with separate MFCs and PTs

- Prevents cross-contamination and reaction between different precursors before theyenter the reaction chamber

- Innovative PT setup with SW comprises pulsing monitoring (easy start-up of new

precursor)

IMPORTANT SPECS FOR THE TOOL AND PROCESS FUNCTIONALITY!!!

Important Design Specs

S f

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Software and hardware interlocks of hazardous chemicals- Gas sensors to detect possible NH3 and O3 leaks- Gas cabin for safe handling of high pressure gases and safe purging of gas lines- TMA (trimethyl aluminium) cabin for pyrophoric chemicals- Normally closed pneumatic valves (all valves closed if the pneumatic line burns)

Software and hardware interlocks for hardware

- Software based pressure monitoring of the vacuum chamber with interlock limits- Hardware interlock of the vacuum chamber over pressure- Hardware interlock for overheating (touch safety: ∼60 °C) of outer vacuum chamber

wall- Earthquake support legs of the reactor- Emergency Off (EMO) buttons- Hardware interlock of pneumatic lift crash

Automatic opening of the reaction chamber controlled with a touch panel

- No need to touch the reaction chamber lid when the reactor is heated

Reaction chamber mounted inside a cold-wall vacuum chamber

- Prevents possible injuries by burning hands or equipment on the hot reaction

chamber lid- Isolated reaction chamber ensures that all hazardous chemicals stay inside the

reaction chamber and no condensation occurs on cold vacuum chamber walls

IMPORTANT SPECS FOR SAFETY!!!

Safety

Examples of Processes Our Customers Have

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Examples of Processes Our Customers HaveTested with SUNALE™ ALD Process Tools

1) TMA + H2O Al2O3

2) AlCl3 + H2O Al2O3

3) Ta(OEt)5 + H2O Ta2O5

4) TaCl5 + H2O Ta2O5

5) TiCl4 + H2O TiO2

6) Ti(OiPr)4 + H2O TiO2

1) T. Pilvi, M. Kemell, T. Hatanpää, H. Su, J. Pearson, S. Nenonen, M. Leskelä, and M. Ritala, ALD of Ir on Microchannel Plates for X-ray Optic Applications, Presentedat AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.2) T. Aaltonen, Atomic Layer Deposition of Noble Metal Thin Films, Doctoral dissertation, University of Helsinki, Faculty of Science, Department of Chemistry, April 2005.

7) Ir(acac)3 + O2 Ir(1,2

8) Ir(MeCp)(CHD) + O2 Ir(2

9) RuCp2 + O2 Ru(2

10)ZnEt2 + H2O ZnO11)(Ga(NMe2)3)2 + H2O Ga2O3

12)TEMAH + H2O HfO2

E l f Fil R lt

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Examples of Film Results

Al2O3 from TMA and H2O, 100 mm Si-wafer

• Deposition temperature: 300°C

• Thickness: 47.2 nm• 1-σ non-uniformity (100 * ave. / stdev.): 0.21 %

TiO2 from TiCl4 and H2O, 100 mm Si-wafer

• Deposition temperature: 300°C

• Thickness: 117 nm

• 1-σ non-uniformity (100 * ave. / stdev.): 0.6 %

ZnO from DEZ and H2O, 100 mm Si-wafer

• Deposition temperature: 300°C

• Thickness: 28.1 nm

• 1-σ non-uniformity (100 * ave. / stdev.): 0.94 %

E l f Fil R lt

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Examples of Film Results

Al2O3 from TMA and H2O

• Deposition temperature: 300°C

• Al2

O3

thickness: 80 nm

• Trenches: 94 µm deep, 7-7.2 µm wide, aspect ratio > 12

• 100 % conformality within SEM measurement precision

• SEM-pictures: Courtesy of VTT, Finland

Batch Reactor Results

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Batch Reactor ResultsThickness and RI Variation Between Slots

This figure depicts how there is hardly any difference in thickness and RI valuesbetween slots. There are five data points in each slot number.

0

1020

30

40

50

60

0 5 10 15 20 25Slot number

   T   h

   i  c   k  n  e  s  s   [  n  m

   ]

1

1,2

1,4

1,6

1,8

2

   R  e

   f  r  a  c   t   i  v  e   i  n   d  e

  x

ThicknessRI

Batch Reactor Results

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a a s sRun to Run Repeatability

This figure depicts repeatability between runs. Each data point is an average of 5 pointsof single wafer. All data points represent the same slot of batch.

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9 10Batch number

   A  v  e  r  a  g  e   t   h   i  c   k  n  e  s  s

   [  n  m   ]

1

1,2

1,4

1,6

1,8

2

   R  e

   f  r  a  c   t   i  v  e   i  n   d  e

  x

ThicknessRI

Batch Reactor Results

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Batch Reactor ResultsParticle Level

These figures depict the total particle level for Al2O3 process at a customer site. In eachdeposition the thickness of the Al2O3 film was 50 nm. All the data points represent thesame slot of the batch.

Batch Reactor Results

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Film Uniformity in a Batch Chamber

0.3 %< 2 %Batch to Batch

1.0 %< 2 %WithinBatch

0.6 %< 1 %WithinWafer

MeasuredData

Specification

Uniformity: 1σ, STD, 9 points in each wafer (100 mm)

SUNALE™ ALD Process Tools

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SUNALE™ ALD Process Tools

1. Picosun

2. Atomic Layer Deposition

3. ALD in Finland4. Thin film materials and applications

5. SUNALE™ ALD process tools

6. Co-operation partners

Networking with Co-Operation Partners

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New

Source chemicalsThin film materials

ProcessesApplications

TEKNILLINEN KORKEAKOULU

Partnering Companies

Universities Research Institutes

Customer Companies