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ALD/CVD applications, equipment and precursors in high volume manufacturing
Jonas Sundqvist, Ph.D, Fraunhofer IKTS / TECHCET CA LLC
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High-k Material IP (Applications)
Al2O3 TiO2 HfO2 ZrO2
REO STO, BST etc. Ta2O5 Total
Introduction of ALD in 300mm HVM
200mm
CMC Seminar / ICMtia Joint Conf 10/2018
The driver behind ALD & CVD 300mm Equipment fab invest
ALD Equipment Market <25% of the total CVD Wafer Equipment market
• Tokyo Electron has passed ASM in revenue 2017
• 90% of the market is 300mm wafer processing equipment
• TEL and Hitachi Kokusai dominates Large Batch ALD
• 300 mm Spatial ALD and Multi wafer tools continues taking market shares vs. Single wafer & Large Batch
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25%
24%
16%
11%
7%
5%
3%
9%
ALD Equipment Market Estimate 2017US$ 1.8 to 1.9 B
(Semi, PV, Display, MEMS, R&D)
Tokyo Electron
ASM International
Hitachi Kokusai Electric
Lam Research
Wonik IPS
Jusung Engineering
Applied Materials
Other
Trend in IP Filing for Spatial ALD
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5%
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30%
35%
IP Applications for Spatial ALD
Source: Fraunhofer IKTS
Trend in IP Filing for Spatial ALD
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IP Applications for Spatial ALD
TEL NT333 for thermal and plasmaALD of SiO2, SiN, High-k
Source: Fraunhofer IKTS
Wafer forecast – growth drivers for ALD & CVD
For more information on TECHCET’s Wafer reports please go to www.techcet.com
CMC Seminar / ICMtia Joint Conf 10/2018, Ningbo
• Advanced logic benefits as 10 nmfollowed by 7 nm moves fromqualification into production
• Multiple patterning (SADP, SAQP)for logic and memory
• Completion of the NAND to 3D-NAND transition as 3D willaccount for 2/3 of the capacity in2018 (VLSI Research, April 2018)
• Continued high demand for DRAM
• China investments in new Fabsand expansions continue for logicand memory
• Niche memory technologies likespin-transfer torque MRAM (STT-MRAM), Resistive RAM (RRAM),Ferroelectric FET (FeFET) andRAM (FRAM), and Cross-Pointmemory will grow over the coming5 years
Dielectric & High-k Materials IP Trends
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High-k Material IP (Applications)
Al2O3 TiO2 HfO2 ZrO2 REO STO, BST etc. Ta2O5 Total
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Dielectric & High-k Process IP (Applications)
CVD PECVD ALD SOD PVD Total Dielectric Deposition
Al2O3
TiO2
HfO2
ZrO2REOSTO, BST, PZT
Ta2O5
ALD
PECVDCVD
SODPVD
Ta2O5, SrTiOx, BaSrTiOx and PZT 15 to 20 years ago.Today most IP concerning the metaloxides of Al, Hf, Ti, Zr and Rare Earth elements (SiO2 and SiN excluded)
ALD and PECVD are domianting filed IP in deposition of dielectrics and high-k dielectrics (includeing SiO2 and SiN)
Source: Fraunhofer IKTS
Leading Semiconductor Materials Suppliers ($M’s)
Source: TECHCET Critical Materials Reports™
Excluding Silicon Wafers
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Leading Materials Suppliers 2017 Revenue / Ranking
Ceramics Quartz Gases Precursors/SOD Photoresists/Anc. CMP Targets Wet Chem/Cleans Metal Chemicals
CMC Seminar / ICMtia Joint Conf 10/2018, Ningbo
Bulk/Rare Gases
7%
Spec Gas16%
Liquide Precursors
5%
Sputter Targets
3%
Metal Chemicals
(FE)2%
Wet Chemicals
8%CMP Pads & Slurry13%
Photoresists / Ancillaries
27%
Eqt Parts: CMP 4%
Eqt Parts: Si3%
Eqt Parts: Quartz
5%
Eqt Parts: SiC / Ceramics
7%
ALD/CVD Metal & High-k Precursors
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TECHCET Critical Materials Report(TM)
• The combined markets for ALD and CVD metal precursors are estimated to be approximately US$460M 2018 and above US$620M by 2023.
• Average long term CAGR of 8% over 2013 to 2023
TECHCET CA LLC Copyright 2018 all rights reserved www.techcet.com
ALD/CVD/SOD Dielectric Precursors
• Dielectric precursors show growth in all segments for the next 5 years reaching US$660 in 2023 M
• As for metal precursors, the market has over an extended period of time had a double digit growth and we expect the market to continue to develop as the transition to 10 nm and 7 nm node logic and 3D-NAND take place with an average long term CAGR of 9% over 2015 to 2023
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TECHCET Critical Materials Report(TM)
TECHCET CA LLC Copyright 2018 all rights reserved www.techcet.com
FinFET logic at the 10/7 nm node
Intel 10 nm
TSMC 7 nm
Samsung 7 nm
Globalfoundries7 nm
Process Name P1276 (CPU), P1277 (SoC)
7FF, 7FF+, 7HPC 7LPE 7LP
1st Production 2018 1Q/2018 2019 Cancelled
Lithography 193 nm Immersion 193 nm Immersion /EUV
EUV 193 nm Immersion
Exposure SAQP SAQP/SE SE SAQP
Contacted Gate Pitch (CPP)
54 54 54 56
Minimum MetalPitch (MMP)
36 40 36 40
Source : WikiChip
Multiple patterningCritical Materials Conference, April 26-27, Phoenix AZDavid Bloss, Vice President, Technology Manufacturing Group and Director of Lithography Technology Sourcing, Intel Corporation
Multiple patterningCritical Materials Conference, April 26-27, Phoenix AZDavid Bloss, Vice President, Technology Manufacturing Group and Director of Lithography Technology Sourcing, Intel Corporation
Lithography beyond 7nm for <24nm pitch
• No single lithography technology can create <24nm pitch patterns in a single pass except for direct-write e-beam which is too slow and expensive for HVM.
• Multi-patterning process flows can be scompared by Cost Per Wafer Pass (CPWP), a term defined as the cost-of-ownership (CoO)
Modeling for the evaluation of alternate 1D and 2D patterning paths
Source: Ed Korczynski, TECHCETCMC Conference 2018, April 27 2018, Phoenix
ALD
Alternatives – Directed self assembly (DSA)IBM Research at Albany NanoTech, TEL Technology Center, America in Albany, GlobalFoundries, and IBM Research TJ Watson in Yorktown Heights and IBM Research Almaden, San Jose.
Nature Electronics volume 1, pages562–569 (2018)
ALD
ALD ALD
I AIR LIQUIDE, THE WORLD LEADER IN GASES, TECHNOLOGIES AND SERVICES FOR INDUSTRY AND HEALTH
∙Critical Material Conference, Phoenix April 26th, 2018 •
THIS DOCUMENT IS ••PUBLIC
Cobalt applications and requirements
BEOL Cu metallization: 22nm →
Co capping layer✓ Prevents Cu EM
Co liner✓ Improve wettability✓ Prevents voids
Source: Applied Materials Inc.http://www.appliedmaterials.com/products/endura-volta-cvd-cobalt
Challenges • Conformality, void-free deposition• Contact resistance
MOL contact fill: <10nm →
Cu
Low-k
Co liner
Co cap
Barrier
Seed
Source: Applied Materials Inc.
Challenges for <10nm integration• Conformality (low stability precursors)• Adhesion becomes more challenging• Selectivity
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Cobalt IP Filing Trends for Chemical Compounds
Increased filing activity for Cobalt chemical compounds starting 2012. Applications focusing on Li-batteries & Electronic applications (Plating chemicals, Precursors)
2012
Prices for Cobalt cathodes have increased by 60% in 2017 but appear to be stabilized but volatile.
Cobalt IP Filing Trends for Chemical Compounds
Increased filing activity for Cobalt chemical compounds starting 2012. Applications focusing on Li-batteries & Electronic applications (Plating chemicals, Precursors)
2012
Prices for Cobalt cathodes have increased by 60% in 2017 but appear to be stabilized but volatile.
Higher demand from Cobalt use in Electric Vechicles
Competeing Industries
Competing industries for ALD precursors and the most important industries in high volume manufacturing today are:
• Non-Semi Wafer based (e.g. MEMS and LED)
• QD-OLED and AMOLED Flexible display
• Photovoltaic
• R&D Equipment
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From an ALD equipment perspective these markets account for 10 to 15% of the total annual revenue for ALD equipment (US$ 1.8 to 1.9 B). NCD Cluster system for Lucida™ GD series
OLED Encapsluation6G half (1500mmX925mm)
PV – Back side passivation for PERC cells driving TMA use in PECVD & ALD
Equipment & Process Market Share Estimate (%)
OEM Process
TMA
consumption
[mg / wafer]
2017 2018 2020 2022 2025 2028
Fullshare PECVD 9
90 92 86 87 87 83Centrotherm PECVD 5
Meyer Burger PECVD 2.9
Ideal Energy ALD 4
6 6 11 12 13 16
SoLayTec ALD 3
NCD ALD 2
Levitech Spatial ALD 1.6
Leadmicro Spatial ALD 1
Other PECVD SiNx n/a 4 2 2 1 0 0
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TMA consumption and Al2O3 thickness for APCVD, PECVD and ALD Tools (Adapted from TaiyangNews 2018).
The low TMA consumption is a reason why ALD tools are slowly taking market share from PECVD, especially in China
MEMS
In MEMS applications that consist of numerous 3D structures, narrow cavities and the need of conformal coatings even in large buried structures ALD is optimal for deposition in of layers with very specific properties or combination thereof:
[email protected] 10/1/2017
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Large volume of MEMS for Smartphone market (Gyro, Sensors, Speakers, Microphones)Leading MEMS and companies have implemented ALD i HVM
o Diffusion barrierso Adhesion layerso Charge dissipative layerso Layers lowering frictional wearo Optical layerso Coatings for hermetical sealing
o Hydrophobic layers to decrease stictiono Conformal, thermally conductive layerso Conductive seed layers for plating purposeso Etch masks and etch stop layerso Conformal, electrically insulating layers
New 200 mm ALD Wafer Cluster Tools
PicosunSingel WaferMini Batch
VeecoMini Batch
BeneqMini Batch
Oxford InstrumentsPlasmaPro Cluster PECVD, ALD & ALE
