aligned zn—zn2sio4 core—shell nanocables with homogeneously intense ultraviolet emission at 300...

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2005 Nanotechnology V 1505 Aligned Zn—Zn 2 SiO 4 Core—Shell Nanocables with Homogeneously Intense Ultraviolet Emission at 300 nm. — The title nanocables, which exhibit uniform and strong middle-UV (300 nm) emission at room temperature are grown on Si substrates by vapor phase oxidation of metallic Zn powders. The lenghts of the nanocables in- crease as the distance between the substrate and the source decreases. The uniform Zn core certainly will bring about a unique kind of metal—semiconductor contact in each direction. The optical and expected electrical properties of the nanocables should gen- erate exciting advances in the applications of the material in optoelectronic devices. — (FENG, X.; YUAN, X.; SEKIGUCHI, T.; LIN, W.; KANG*, J.; J. Phys. Chem. B 109 (2005) 33, 15786-15790; Dep. Phys., Xiamen Univ., Xiamen 361005, Fujian, Peop. Rep. China; Eng.) — W. Pewestorf 48- 218

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2005

NanotechnologyV 1505 Aligned Zn—Zn2SiO4 Core—Shell Nanocables with Homogeneously Intense

Ultraviolet Emission at 300 nm. — The title nanocables, which exhibit uniform and strong middle-UV (300 nm) emission at room temperature are grown on Si substrates by vapor phase oxidation of metallic Zn powders. The lenghts of the nanocables in-crease as the distance between the substrate and the source decreases. The uniform Zn core certainly will bring about a unique kind of metal—semiconductor contact in each direction. The optical and expected electrical properties of the nanocables should gen-erate exciting advances in the applications of the material in optoelectronic devices. — (FENG, X.; YUAN, X.; SEKIGUCHI, T.; LIN, W.; KANG*, J.; J. Phys. Chem. B 109 (2005) 33, 15786-15790; Dep. Phys., Xiamen Univ., Xiamen 361005, Fujian, Peop. Rep. China; Eng.) — W. Pewestorf

48- 218