alpha-power law mosfet model and its …web.cecs.pdx.edu/.../ken_kimura_presentation.pdfreferences...
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Alpha-Power Law MOSFET Model and its
Applications to CMOS Inverter Delay
By Ken Kimura
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CMOS Models
• Long Channel (Conventional) – width and length long enough so that edge
effects from the four sides can be neglected
• Short Channel – width and length short enough
such that the edge effects can not be neglected
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Shot Channel MOS Device Characteristics
• Channel Length Modulation
• Threshold Voltage Roll-off
• Narrow Gate Width Effects
• Reverse Short Channel Effects
• Punch Through
• Mobility Degradation
• Velocity Saturation
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Long Channel CMOS Device
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Short Channel CMOS Device
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Short Channel CMOS Device
2.000E+04
5.000E+04
0 0.5 1 1.5 2 2.5
Ch
ann
el E
lect
ric
Fie
ld (
V/c
m)
Channel Length (um)
MOSFET Channel Electric Field by Process
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Short Channel CMOS Modeling
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Short Channel CMOS Modeling
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Short Channel CMOS Modeling
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Effect on Delay Calculation
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Effect of Source and Drain Resistance
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Source: Intel’s Revolutionary 22 nm Transistor Technology, Bohr, Mistry, May, 2011
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Questions?
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Strained Silicon
Source: The Invention of Uniaxial Strained Silicon Transistors at Intel, Bohr, Jan 2007
Source: IBM's Strained Silicon Breakthrough
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Conventional vs Tri-Gate Device
Source: Intel’s Revolutionary 22 nm Transistor Technology, Bohr, Mistry, May, 2011
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Details of Tri-Gate Device
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References
• T Sakurai and R Newton, “Alpha-Power Law MOSFET Model and its Applications to CMOS Inerter Delay and Other Formulas”, IEEE Journal of Solid State Circuits, Vol 25, No 2, April 1990 • M Bohr and K Mistry, “Intel’s Revolutionary 22nm Transistor Technology”, May 2011 • N Weste and D Harris, “CMOS VLSI Design”, 4th ed, Addison-Wesley, 2011 • D Neamen, “Semiconductor Physics and Devices”, 4th ed, McGraw-Hill, 2011 •M Bohr, “Source: The Invention of Uniaxial Strained Silicon Transistors at Intel”, Jan 2007 •IBM's Strained Silicon Breakthrough, http://www.research.ibm.com/resources/press/strainedsilicon/