alternate lithograph techniques
TRANSCRIPT
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Lecture 21 Alternative Lithography Techniques
EECS 598-002 Winter 2006
Nanophotonics and Nano-scale Fabrication
P.C.Ku
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Overview
Immersion lithography
EUV lithography
Interference lithography Imprint lithography
Maskless lithography (ML2)
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Trends in lithography
Resolution limit = k1/NA and NA = nsin
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Immersion lithography
Resolution limit = /2NA and NA = nsin
Conventional lithography: n = 1
Immersion lithography: n = 1.44 (pure water) Current projected limit = 35 nm half pitch.
Issues need to be taken care of:
Possible bubbling of water
Water temperature control to keep the refractive index constant
Water-resist interaction resist needs to be water resistant
Metrology (e.g. registration) can be a challenge if done throughwater
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How to introduce water?
Swimming pool design
Entire stage under water
Bathtub design
Entire wafer under water
Shower design Water is injected to the part of the wafer thats going to be
exposed.
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Shower design
Wafer edge
exposure
may bean issue.
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First generation of immersion tools
NA < 1. But DOF is improved.
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Extreme UV lithography (EUVL)
At wavelength of 13-14 nm: no refractive optics. Need to
use reflection optics. Reflectors are made of Mo/Si Bragg
reflectors.
EUVL mask
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EUVL system schematic
From Nanoelectronics and Information Technology
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Interference lithography
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Extension from conventional lithography
-1-1
-2
-3
1
-4
-2
Add intensities from exposures with different illumination
angles.
Add in zero order through a separate optical path whenneeded.
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Why do we need the zero-th order
Conventional
Exposure
High Spatial
Frequencies Only
High Spatial
Frequencies
Plus Zero Order
Printed
Resist
Calculated
Image
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Implementation of IIL
Zero order light follows the
path on the right.
The movable mirror M1 selects
the diffraction orders that willadd with zero order at the wafer.
The effective NA approaches
sin(U+sin-1NAobj).
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IIL with i-line lithography
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Multiple beam interference
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Imprint lithography
Nice tutorial on the web: link
http://www.molecularimprints.com/Technology/technology
2.html
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Maskless lithography (ML2)
SCAPAL (scattering with angular limitation in projection
electron beam lithography)
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Proximity effect in e-beam lithography
Resolution limit is not determined by electron wavelength
but rather by backscattered electrons (proximity effect.)
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Schedule for the rest of the semester
Etching
Thin film deposition
Self-assembly and hybrid nanofabrication Miscellaneous e.g. VLS nanowire growth,
Summary of the course and outlook
+ guest lecture on photonic crystals (time TBA)