MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 336

Amorphous Silicon Technology—1994

Symposium held April 4-8, 1994, San Francisco, California, U.S.A.

EDITORS:

Eric A. Schiff

Syracuse UniversitySyracuse, New York, U.S.A.

Michael Hack

Xerox PARC

Palo Alto, California, U.S.A.

Arun Madan

MV Systems Inc.

Golden, Colorado, U.S.A.

Martin Powell

Philips Research Laboratories

Surrey, United Kingdom

Akihisa Matsuda

Electrotechnical LaboratoryTsukuba, Japan

IMIRISI

MATERIALS RESEARCH SOCIETY

Pittsburgh, Pennsylvania

Contents

PREFACE

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

PART I: DEPOSITION STUDIES, PLASMA AND FILMS

* RELATIONSHIP BETWEEN PLASMA CHEMISTRY AND ELECTRON

TRAPPING RATE IN PLASMA-DEPOSITED SILICON NITRIDE

D.L. Smith 3

* CONTROL OF THE ELECTRON AND HOLE DRIFT MOBILITIES IN

PLASMA DEPOSITED a-Si:H

G. Ganguly and A. Matsuda 7

PROGRESS IN LARGE AREA SELECTIVE SILICON DEPOSITION FOR

TFT/LCD APPLICATIONS

J.H. Souk and G.N. Parsons 19

A LOW TEMPERATURE PLASMA-ASSISTED DEPOSITION PROCESS FOR

MICROCRYSTALLINE THIN FILM TRANSISTORS, TFTs

S.S. He and G. Lucovsky 25

EFFECTS OF INTERMITTENT DEPOSITION ON THE DEFECT DENSITY

IN a-Si:H

T. Kamei, N. Hata and A. Matsuda 31

AMORPHOUS TO POLYSILICON GROWTH AND "SUNFLOWER EFFECT"

OBSERVED IN CATALYTIC-CVD

H. Matsumura, Y. Hosoda and S. Furukawa 37

FACTORS INFLUENCING THE QUALITY OF a-Si:H FILMS DEPOSITED

BY THE 'HOT WIRE' TECHNIQUEE. C. Molenbroek, A.H. Mahan, E.J. Johnson and A.C. Gallagher 43

NANOSCALE STUDY OF THE HYDROGENATED AMORPHOUS SILICON

SURFACE

D.M. Tanenbaum, A. Laracuente and A.C. Gallagher 49

SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY

SPATIAL SEPARATION TECHNIQUESR. Martins, I. Ferreira, E. Fortunato and M. Vieira 55

* Invited Paper

v

EXCIMER LASER ANNEALING OF AMORPHOUS SILICON FILMS

J. Viatella, R.K. Singh and R.P.S. Thakur

HIGH-GROWTH RATE a-Si:H DEPOSITED BY HOT-WIRE CVD

P. Brogueira, V. Chu and J.P. Conde

IN SITU ELLIPSOMETRIC MONITORING OF LOW TEMPERATURE

GROWTH OF POLY-Si FILMS BY RF PLASMA CVD

T. Shirafuji, Y. Hayashi and K. Tachibana

VHF COAXIAL HELIX PLASMA SOURCE FOR a-Si:H

U. Stephan, J. Kuske and K. Schade

IN SITU ELLIPSOMETRIC STUDY OF THE DEPENDENCE OF a-Si:H

FILM GROWTH ON SUBSTRATE PROPERTIES AND IGNITION

PROCEDURES

U.I. Schmidt, W. Herbst, B. Schroder and H. Oechsner

IMPROVEMENT OF FILM QUALITY OF a-Si:H DEPOSITED BY

PHOTO-CVD USING SiH2Cl2T. Oshima, K. Yamaguchi, A. Yamada, M. Konagai and K. Takahashi

AMORPHOUS SILICON FILMS FROM DICHLOROSILANE AND

HYDROGEN

J.N. Bullock and S. Wagner

CYCLIC CVD FOR PREPARATION OF SILICON FILMS OF

ADJUSTABLE STRUCTURE

S. Koynov, S. Grebner, T. Fischer and R. Schwarz

OPTIMIZATION OF A DUAL-MODE RF/MICROWAVE PLASMA FOR

AMORPHOUS THIN FILM DEPOSITION

R. Etemadi, O. Leroy, B. Drevillon and C. Godet

MORE INSIGHT INTO THE VHF-GLOW-DISCHARGE BY PLASMA

IMPEDANCE MEASUREMENTS

U. Kroll, Y. Ziegler, J. Meier, H. Keppner and A. Shah

CHARACTERIZATION OF AMORPHOUS SILICON DEPOSITED AT

HIGH RATE BY HELIUM DILUTION PECVD AND USED FOR

APPLICATIONS IN RADIATION DETECTION

A. Hie, T. Pochet, F. Foulon and B. Equer

vi

PART II: FUNDAMENTAL STUDIES AND DEFECTS

STRUCTURAL RELAXATION AND STRUCTURAL MEMORY AT

AMORPHOUS SILICON DANGLING BONDS

H.M. Branz and P.A. Fedders

DEFECT-RELATED PHOTOLUMINESCENCE OF a-Si:H

I. Ulber, A. Barth, W. Fuhs and H. Mell

A UNIFIED DESCRIPTION OF THE DENSITY OF STATES FOR

HYDROGEN AND ELECTRONS IN AMORPHOUS SILICON

S.C. Deane and M.J. Powell

ON MODELING TRIVALENT DANGLING BONDS WITH BIVALENT

LEVELS

V. Suntharalingam and H.M. Branz

PHYSICS OF THE MEYER-NELDEL RULE IN AMORPHOUS SILICON

H.M. Branz, A. Yelon and B. Movaghar

TOWARD A PRACTICAL MODEL OF a-Si:H DEFECTS IN INTENSITY-

TIME-TEMPERATURE SPACE

D. Caputo, J. Bullock, H. Gleskova and S. Wagner

MOLECULAR DYNAMICS STUDIES OF DIAMONDLIKE AMORPHOUS

CARBON

P.A. Fedders and D.A. Drabold

MOLECULAR DYNAMICS SIMULATION OF HYDROGENATED

AMORPHOUS SILICON WITH TERSOFF POTENTIAL

T. Ohira, T. Inamuro and T. Adachi

STUDY OF AMORPHOUS SILICON NITRIDE FILMS BY BRILLOUIN

SPECTROSCOPY

G. Carlotti, G. Socino, H. Xia, Z.F. Li, W. Zhang, X.X. Qu, K.J. Chen

and X.K. Zhang

NON-RADIATIVE RECOMBINATION IN a-Si:H

M. Schubert, R. Stachowitz, R. Saleh and W. Fuhs

MONTE CARLO MODELLING OF ELECTROPHOTOGRAPHIC DARK

DISCHARGE

S.J. Elmer, J.M. Marshall, R.A.C.M.M. van Swaaij, J. Bezemer and

A.R. Hepburn

Invited Paper

vii

EVIDENCE OF ENERGY RELAXATION OF CHARGED DEFECTS IN

AMORPHOUS SILICON VIA FORWARD BIAS CAPACITANCE

MEASUREMENTS

D. Caputo, G. de Cesare, G. Masini, F. Palma, A. Pastore and M. Tucci

EXPLORATION OF DEFECT RELAXATION DYNAMICS IN

HYDROGENATED AMORPHOUS SILICON USING TEMPERATURE

SWITCHING EXPERIMENTS

A. Gardner and J.D. Cohen

MOLECULAR DYNAMICS STUDIES OF DEFECT MOTION IN a-Si:H

P.A. Fedders

NEW APPROACHES TO MOLECULAR DYNAMICS SIMULATIONS

OF a-Si:H

Q. Li, R. Biswas and CM. Soukoulis

PART III: HYDROGEN'S ROLE AND METASTABILITY

LIGHT INDUCED DEFECTS IN a-Si:H, TEMPERATURE DEPENDENCE

OF THEIR CREATION AND ANNEAL AND THEIR EFFECT ON

PHOTOCARRIER LIFETIME

P. Stradins, H. Fritzsche and M.Q. Tran

FABRICATION OF HIGHLY STABLE a-Si:H FROM CHLORINATED

PRECURSORS

M. Azuma, T. Yokoi and I. Shimizu

COMPARISON OF DARK AND LIGHT-INDUCED ANNEALING OF

METASTABLE DEFECTS IN a-Si:H

H. Gleskova, M. Nakata and S. Wagner

THE STAEBLER-WRONSKI EFFECT AND THE THERMAL

EQUILIBRATION OF DEFECT AND CARRIER CONCENTRATIONS

R.M.A. Dawson, CM. Fortmann, Y.M. Li and C.R. Wronski

METASTABLE DEFECT KINETICS IN HYDROGEN PASSIVATED

POLYCRYSTALLINE SILICON

N.H. Nickel, R.A. Street, W.B. Jackson and N.M. Johnson

EXPLANATION OF LIGHT-ENHANCED ANNEALING OF DEFECTS IN

AMORPHOUS SILICON

D. Redfield and R. Bube

RECOVERY PROCESS FOR LIGHT-SOAKED a-Si:H

Q. Zhang, H. Takashima, J.-H. Zhou, M. Kumeda and T. Shimizu

Invited Paper

viii

NEW MODEL FOR LOCAL H-ATOM BONDING RE-ARRANGEMENTS

ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT IN a-Si:H AND

a-Si.H-BASED ALLOYS

G. Lucovsky, M.J. Williams, S.M. Cho, Z. Jing and J.L. Whitten 275

METASTABILITY UNDER HIGH-INTENSITY LIGHT OF DEVICE-

QUALITY He-DILUTED, H2-DILUTED AND STANDARD a-Si:H

FILMS DEPOSITED BETWEEN 50°C AND 350°C

P. Morin and P. Roca i Cabarrocas 281

THE ROLE OF THE BAND GAP IN THE LIGHT-INDUCED

DEGRADATION OF AMORPHOUS SILICON ALLOYS

T. Unold 287

A QUANTITATIVE MODEL FOR THE METASTABLE DEFECT

CREATION IN AMORPHOUS SEMICONDUCTORS BY keV-ELECTRON

IRRADIATION

A. Scholz, B. Schroder and H. Oechsner 293

HYDROGEN BONDING AND MICROVOID STABILITY IN a-Si:H

M.J. van den Boogaard, A.C. van der Steege, W.G.J.H.M. van Sark

and W.F. van der Weg 299

METASTABLE DEFECT STUDIES IN HYDROGEN MODULATED

MULTILAYER AMORPHOUS SILICON

D. Kwon and J.D. Cohen 305

HYDROGEN BONDING CONFIGURATIONS DETERMINED FROM H

EVOLUTION

W.B. Jackson, N.H. Nickel, N.M. Johnson, F. Pardo and P.V. Santos 311

HYDROGEN DIFFUSION IN UNDOPED AND B-DOPED a-Si^C^HR. Shinar, J. Shinar, G. Subramania, H. Jia, S. Sankaranarayanan,M. Leonard and V.L. Dalai 317

HYDROGEN DIFFUSION AND SOLUBILITY IN a-Si:H

W. Beyer and H. Wagner 323

EFFECT OF LIGHT SOAKING ON THE LOCAL MOTION OF

HYDROGEN IN HDYROGENATED AMORPHOUS SILICON

P. Hari, P.C. Taylor and R.A. Street 329

GROWTH OF AMORPHOUS SILICON MATERIALS AND DEVICES

WITH IMPROVED STABILITY

V.L. Dalai, E.X. Ping, S. Kaushal, M. Leonard, M.K. Bhan and K. Han 335

ix

PART IV: OPTOELECTRONIC PROPERTIES AND TRANSPORT STUDIES

* POLARIZED ELECTROABSORPTION AND CARRIER MOBILITIES IN

AMORPHOUS SILICON ALLOYS

Y. Tsutsumi, H. Okamoto, K. Hattori and Y. Hamakawa 343

MOVING PHOTOCARRIER GRATING TECHNIQUE FOR MOBILITY AND

LIFETIME MEASUREMENTS IN AMORPHOUS SEMICONDUCTORS

M. Hundhausen, U. Haken and L. Ley 353

TRANSPORT STUDIES BY STEADY-STATE AND TRANSIENT

PHOTOCARRIER GRATING METHODS

R. Schwarz, F. Wang and D. Schuster 359

BUILT-IN POTENTIALS VIA ELECTROABSORPTION MEASUREMENTS IN

a-Si:H p-i-n SOLAR CELLS: A CRITICAL ASSESSMENT

Q. Wang, E.A. Schiff and S.S. Hegedus 365

THE INTERPRETATION OF THE CONSTANT PHOTOCURRENT METHOD

IN TERMS OF DEEP DEFECT DENSITY OF STATES IN a-Si:H

F. Siebke and H. Stiebig 371

IMPROVED ELECTRICAL AND TRANSPORT CHARACTERISTICS OF

AMORPHOUS SILICON BY ENRICHING WITH MICROCRYSTALLINE

SILICON

A. Mireshghi, W.S. Hong, J. Drewery, T. Jing, S.N. Kaplan, H.K. Lee

and V. Perez-Mendez 377

INTERPRETATION OF HIGH FIELD TRANSPORT IN a-Si:H BASED

ON THE EFFECTIVE TEMPERATURE DEFINITION

C.E. Nebel and R.A. Street 383

THE MOBILITY LIFETIME PRODUCT OF ELECTRONS AS A FUNCTION

OF TEMPERATURE AND ELECTRON CONCENTRATIONS IN a-Si:H

S. Nishida and H. Fritzsche 389

NON-GAUSSIAN NOISE STATISTICS IN UNDOPED HYDROGENATED

AMORPHOUS SILICON

G.M. Khera and J. Kakalios 395

ANALYSIS OF THE PHYSICAL ORIGIN OF THE BLUE SHIFT OF THE

OPTICAL BANDGAP OF a-Si:H BASED MULTILAYERS

N. Bernhard and G.H. Bauer 401

MODELING OF REVERSE BIAS DIFFERENTIAL CHARGE EXPERIMENTS

IN AMORPHOUS SILICON

F.R. Shapiro 407

* Invited Paper

x

CHARGED DEFECT STATE DISTRIBUTIONS OBTAINED FROM THE

ANALYSIS OF PHOTOCONDUCTIVITIES IN INTRINSIC a-Si:H FILMS

M. Gune§, R.W. Collins and C.R. Wronski

THERMAL QUENCHING AND PHOTO-ENHANCEMENT OF \n

PRODUCTS IN a-Si:H -- THE ROLE OF DANGLING BONDS AND

BAND TAILS

E. Morgado

MOBILITY-LIFETIME PRODUCTS IN GLOW DISCHARGE AND RF

SPUTTER DEPOSITED a-Si:H

M.H. Farias, A. Roche, S.Z. Weisz, H. Jia, J. Shinar, Y. Lubianiker and

I. Balberg

THE GROWTH, STEADY STATE AND DECAY OF THE PHOTOCARRIER

POPULATION AT LOW TEMPERATURES

M.Q. Tran, P. Stradins and H. Fritzsche

THE TIME-OF-FLIGHT TECHNIQUE APPLIED TO AMORPHOUS

SILICON pin SOLAR CELLS

H. Brummack, N. Bernhard, K. Eberhardt and M.B. Schubert

SPACE-CHARGE-ENHANCED POST-TRANSIT-CURRENTS IN a-Si:H

F. Schauer, A. Eliat, M. Neslidek, G.J. Adriaenssens and L.M. Stals

THERMALLY STIMULATED CONDUCTIVITY IN a-Si:H AT LOW

TEMPERATURES

M. Zhu, M.B. von der Linden and W.F. van der Weg

CHARGE AND CURRENT TRANSIENT MEASUREMENTS ON n-TYPE

HYDROGENATED AMORPHOUS SILICON IN THE RELAXATION

REGIME

U.W. Paschen, D. Kwon and J.D. Cohen

SWITCHING EFFECTS, CURRENT FLUCTUATIONS AND LATERAL

PHOTOVOLTAGE - THE ELECTRICAL APPEARANCE OF a-Si:H/METAL

MULTILAYERS

A.N. Panckow, T.P. Driisedau and U. Schmidt

PART V: MODIFIED BAND-GAP MATERIALS AND DOPING STUDIES

EFFECT OF ION DOPING TEMPERATURE ON ELECTRICAL PROPERTIES

OF APCVD a-Si

K.H. Lee, B.Y. Moon, Y.C. Chung, S.M. Lee, S.C. Kim, D. Kim and J. Jang

IN-SITU CRYSTALLIZATION AND DOPING OF a-Si FILM BY MEANS OF

SPIN-ON-GLASS

T. Sakoda, C.-D. Kim and M. Matsumura

xi

SILICON CARBON ALLOYS PRODUCED BY VHF AND CONVENTIONAL

PECVD. A COMPARISON OF THEIR PROPERTIES

G. Crovini, F. Demichelis, C.F. Pirri, E. Tresso, J. Meier, S. Dubail

and A. Shah 481

HYDROGENATED AMORPHOUS SILICON GERMANIUM ALLOY FOR

STABLE SOLAR CELLS

A. Terakawa, M. Shima, K. Sayama, H. Tarui, H. Nishiwaki and S. Tsuda 487

THE ELECTRONIC STRUCTURE OF a-Si,Ge:H ALLOYS

F. Zhong, J.D. Cohen, J. Yang and S. Guha 493

THE MECHANISM OF THE PLASMA INDUCED DEPOSITION of a-Ge

AND /xc-Ge FROM GERMANE: THE LIMITS AND POSSIBLE

ALTERNATIVES

F. Glatz, R. Konwitschny, M.G.J. Vepfek-Heijman and S. Vepfek 499

VERY HIGH-GAP TETRAHEDRALLY COORDINATED AMORPHOUS

SILICON-CARBON ALLOYS

I. Solomon and L.R. Tessler 505

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF

<p>^ic-Si:H VERY THIN FILMS DEPOSITED BY THE VHF-GD

TECHNIQUE

R. Fluckiger, J. Meier, A. Shah, A. Catana, M. Brunei, H.V. Nguyen,

R.W. Collins and R. Carius 511

DEFECT DISTRIBUTION AND BONDING STRUCTURE IN HIGH BAND

GAP a-Si^C^H FILMS DEPOSITED IN H2 DILUTION

R. Galloni, R. Rizzoli, C. Summonte, F. Demichelis, F. Giorgis,C.F. Pirri, E. Tresso, G. Ambrosone, C. Catalanotti, U. Coscia, P. Rava,

G. Delia Mea, V. Rigato, A. Madan and F. Zignani 517

HOLE DRIFT MOBILITY IN a-Si^C^HQ. Gu, Q. Wang, E.A. Schiff, Y.-M. Li and C.T. Malone 523

MINORITY CARRIER DIFFUSION LENGTHS AND PHOTOCONDUCTIVITY

IN a-Si,N:H DEPOSITED BY REMOTE PECVD

M.J. Williams, S.M. Cho, S.S. He and G. Lucovsky 529

THERMAL MODULATED ESR FOR THE STUDY OF DEFECTS IN a-SiC:H

FILMS

F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, L. Ravera and V. Rigato 535

THERMAL CVD OF AMORPHOUS GERMANIUM FILMS FROM

2,5-Bis(Tert.-Butyl)-2,5-Diaza-l-Germa-Cyclopentane ORGANOMETALLICPRECURSOR

F. Glatz, J. Prokop, S. Vepfek, F.R. Klingan and W.A. Herrmann 541

xii

A BASIC STUDY OF THE GeH4 + H2 RF DISCHARGE

P. Wickboldt, D. Pang and W. Paul 547

ELECTRONIC AND OPTICAL PROPERTIES OF a-Si^C^H FILMS

PRODUCED FROM ADMIXTURES OF SILANE AND

DITERTIARYBUTYLSILANE

K. Gaughan, J.M. Viner and P.C. Taylor 553

ELECTRONIC AND OPTICAL PROPERTIES OF a-Si:H FILMS ALLOYED

WITH SULFUR

S.L. Wang, Z.H. Lin, J.M. Viner and P.C. Taylor 559

INFLUENCE OF SUBSTRATE TEMPERATURE ON THE PROPERTIES OF

a-Si:H p-LAYERS OBTAINED FROM TRIMETHYLBORON

J. Puigdollers, J.M. Asensi, J. Bertomeu, J. Andreu and J.C. Delgado 565

BORON AND PHOSPHORUS ION IMPLANTATION IN a-S^C^H THIN

FILMS

R. Rizzoli, R. Galloni, C. Summonte, F. Demichelis, C.F. Pirri, E. Tresso,

G. Crovini, P. Rava and F. Zignani 571

AMORPHOUS SiUxBx ALLOYS: ATOMIC FINE STRUCTURE AND OPTICAL

PROPERTIES

J.R.A. Carlsson, C. Bandmann, S. Csillag, X.-H. Li and M. Johansson 577

AMBIPOLAR DIFFUSION LENGTHS, Lamb, AND STEADY-STATE

PHOTOCONDUCTIVITY, cr h,IN B2H6 DOPED Mc-Si

S.M. Cho, S.S. He and G. Lucovsky 583

BORON DOPED a-Si,C:H GROWN BY REACTIVE MAGNETRON

SPUTTERING FROM DOPED TARGETS

Y.H. Liang, S.-Y. Yang, A. Nuruddin and J.R. Abelson 589

PROCESS-PROPERTY RELATIONSHIPS FOR a-Si^C^H DEPOSITION:

EXCURSIONS IN PARAMETER SPACE GUIDED BY REAL TIME

SPECTROELLIPSOMETRY

Y. Lu, S. Kim, M. Gunes, Y. Lee, C.R. Wronski and R.W. Collins 595

GROWTH OF GERMANIUM CARBON ALLOY BY PECVD USING SILANE

AS A GROWTH PROMOTER

P.R. Moffitt, H.A. Naseem, S.S. Ang and W.D. Brown 601

EXCITATION FREQUENCY-DEPENDENT RAMAN SCATTERING IN

a-SiC:H ALLOYS

G. Morell, R.S. Katiyar, S.Z. Weisz and I. Balberg 607

EFFICIENT VISIBLE ROOM TEMPERATURE PHOTOLUMINESCENCE IN

WIDE GAP HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS

L.R. Tessler and I. Solomon 613

xiii

PHOTOBLEACHING OF PL AND TEMPERATURE DEPENDENCE OF ESR

IN NITROGEN-RICH AMORPHOUS SILICON NITRIDE FILMS

D. Chen, J.M. Viner, P.C. Taylor and J.Z. Kanicki

DIFFUSION LENGTHS IN a-Si:H/a-SiC:H AND a-Si:H/a-SiGe:H

MULTILAYERS DETERMINED BY THE GRATING METHOD

N. Bernhard and G.H. Bauer

1/f NOISE MEASUREMENTS OF HYDROGENATED AMORPHOUS

SILICON-CARBON ALLOYS

H.M. Dyalsingh, G.M. Khera, J. Kakalios, C.C. Tsai and R.A. Street

NITROGEN: NOT A DOPANT IN CRYSTALLINE Si (c-Si), BUT AN

n-TYPE DOPANT IN a-Si:H, WHY?G. Lucovsky, M.J. Williams, S.S. He, S.M. Cho, Z. Jing and J.L. Whitten

PART VI: SOLAR CELLS

AMORPHOUS SILICON ALLOY PHOTOVOLTAIC TECHNOLOGY-FROM

R&D TO PRODUCTION

S. Guha, J. Yang, A. Banerjee, T. Glatfelter, K. Hoffman, S.R. Ovshinsky,M. Izu, H.C. Ovshinsky and X. Deng

CHARACTERIZATION AND OPTIMIZATION OF THE TCO/a-Si:H(,B)INTERFACE FOR SOLAR CELLS BY IN-SITU ELLIPSOMETRY AND

SIMS/XPS DEPTH PROFILING

H.N. Wanka, E. Lotter and M.B. Schubert

AN EXPLORATORY SURVEY OF p-LAYERS FOR a-Si:H SOLAR CELLS

Y.-M. Li, F. Jackson, L. Yang, B.F. Fieselmann and L. Russell

THE EFFECT OF H2 DILUTION ON THE STABILITY OF a-Si:H BASED

SOLAR CELLS

L. Yang and L.-F. Chen

SATURATION BEHAVIOR AND THERMAL ANNEALING RECOVERY OF

LIGHT-INDUCED DEGRADATION IN a-SiGe:H ALLOY SOLAR CELLS

S. Guha, X. Xu and J. Yang

IDENTIFICATION AND REDUCTION OF p-i INTERFACE INSTABILITY

AND ESTABLISHMENT OF 8.5% STABILIZED EFFICIENCY FOR SINGLE

JUNCTION a-Si SOLAR CELLS

J. Xi, T. Liu, V. Iafelice, K. Si and F. Kampas

Invited Paper

xiv

STABILITY STUDIES OF HYDROGENATED AMORPHOUS SILICON

ALLOY SOLAR CELLS PREPARED WITH HYDROGEN DILUTION

J. Yang, X. Xu and S. Guha 687

ADJUSTING THE DEFECT PROFILE IN a-Si:H SOLAR CELLS WITH

ENERGY RESOLVED ELECTRON OR LASER BEAMS: EXPERIMENT

AND MODELING

K. Vasanth, D. Caputo, S. Wagner, M. Bennett, S. Bae and S. Fonash 693

STABILITY TEST OF 4 FT2 TRIPLE-JUNCTION a-Si ALLOY PV

PRODUCTION MODULES

X. Deng, M. Izu, K.L. Narasimhan and S.R. Ovshinsky 699

ACCURATE LIGHT ABSORPTION PROFILE IN TANDEM a-Si:H SOLAR

CELLS ON TEXTURED TCO SUBSTRATES

G. Tao, Zs. Makaro, M. Zeman and J.W. Metselaar 705

MODELLING HETEROFACE p.i.n SOLAR CELLS FOR IMPROVING

STABILITY

A. Fantoni, M. Vieira and R. Martins 711

NON-LOCAL RECOMBINATION IN "TUNNEL JUNCTIONS" OF

MULTIFUNCTION AMORPHOUS Si ALLOY SOLAR CELLS

J. Hou, J. Xi, F. Kampas, S. Bae and S.J. Fonash 717

A STUDY OF a-Si:H/a-SiGe:H TANDEM SOLAR CELLS AND MODULES

Y.-M. Li, L. Yang, M.S. Bennett, L. Chen, F. Jackson, K. Rajan and

R.R. Arya 723

INVESTIGATION OF SHUNT RESISTANCES IN SINGLE-JUNCTION a-Si:H

ALLOY SOLAR CELLS

K.R. Lord II, M.R. Walters and J.R. Woodyard 729

EFFECTS OF TCO/a-Si:C:H INTERFACE DEFECT STATES ON p-i-n a-Si:H

SOLAR CELL PERFORMANCE

F. Smole and M. Topic 735

AD-LAYER FOR SPATIAL CONTROL OF LIGHT INDUCED

DEGRADATION ON pin DEVICES

M. Vieira, A. Fantoni, E. Fortunato, G. Lavareda and R. Martins 741

PART VII: THIN FILM TRANSISTORS

* a-Si TFT TECHNOLOGIES FOR AM-LCDS

N. Ibaraki 749

* Invited Paper

xv

UNDERSTANDING OF THIN FILM TRANSISTOR ELECTRICAL

MEASUREMENTS IN THE LIGHT OF THE DEFECT POOL MODEL

S.C. Deane and M.J. Powell

SILICON NITRIDE OPTIMISATION FOR a-Si.H TFTs USED IN

PROJECTION LC-TVs

I.D. French, C.J. Curling and A.L.Goodyear

EFFECTS OF N2 PLASMA TREATMENT ON Si02 GATE INSULATOR

IN a-Si:H THIN FILM TRANSISTOR

S.C. Kim, S.S. Bae, E.Y. Oh, J.H. Kim, J.W. Lee, C.Y. Kim and

D. Kim

CONSIDERATIONS FOR LARGE AREA FABRICATION OF INTEGRATED

a-Si AND POLY-Si TFTs

P. Mei, G.B. Anderson, J.B. Boyce, D.K. Fork, M. Hack, R.I. Johnson,R.A. Lujan and S.E. Ready

HIGH PERFORMANCE a-Si:H THIN FILM TRANSISTORS, TFTs: THE

IMPORTANCE OF NITRIDE DIELECTRICS WITH NO DETECTABLE

Si-Si BONDING

S.S. He and G. Lucovsky

EFFECTS OF TOP INSULATOR OVERLAP ON THE STABILITY IN

HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS

H.S. Choi, Y.S. Kim, S.K. Lee, J.K. Yoon, W.S. Park and M.K. Han

STABILITY OF a-Si:H TFTs EMPLOYING APCVD SK>, WITH N2PLASMA TREATMENT AS A GATE DIELECTRIC

M.C. Jun, Y.S. Kim, E.Y. Oh, D.G. Kim and M.K. Han

A NEW METHOD FOR THE DERIVATION OF THE OUTPUT

CHARACTERISTICS OF AMORPHOUS SILICON THIN-FILM

TRANSISTORS

A. Mittiga, L. Mariucci, R. Carluccio, A. Pecora and G. Fortunato

THE KINETICS OF REMOVAL OF DEFECTS IN a-Si:H TFTs MADE

WITH PECVD OXIDE GATE INSULATOR MATERIAL

P.N. Morgan, W.I. Milne, S.C. Deane and M.J. Powell

DEPENDENCE OF FIELD-EFFECT MOBILITY ON DEPOSITION

CONDITIONS IN a-Si:H TFT

Y. Chida, M. Kondo, G. Ganguly and A. Matsuda

DENSITY OF DEEP BANDGAP STATES IN AMORPHOUS SILICON

FROM THE TEMPERATURE DEPENDENCE OF THIN FILM

TRANSISTOR CURRENT

T. Globus, H.C. Slade, M. Shur and M. Hack

Invited Paper

xvi

DETERMINATION OF THE DEFECT REDISTRIBUTION AND CHARGE

INJECTION CONTRIBUTIONS TO THE a-Si:H THIN-FILM TRANSISTOR

INSTABILITY

R. Carluccio, A. Pecora, D. Massimiani and G. Fortunato

THE ORIGIN AND NATURE OF CONTACT RESISTANCE IN a-Si:H TFTs

S.M. Gadelrab and S.G. Chamberlain

PART VIII: IMAGE SENSORS AND NOVEL DEVICES

A NOVEL a-Si(C):H COLOR SENSOR ARRAY

Q. Zhu, H. Stiebig, P. Rieve, H. Fischer and M. Bohm

IMPROVEMENT OF BRIGHTNESS AND THRESHOLD-CURRENT IN

VISIBLE-LIGHT a-SiC:H THIN FILM LED BY USING METAL SHEET

SUBSTRATE

W. Boonkosum, D. Kruangam, S. Panyakeow and B. DeLong

A LARGE AREA, HIGH-RESOLUTION a-Si:H ARRAY FOR X-RAY IMAGING

L.E. Antonuk, Y. El-Mohri, W. Huang, J. Siewerdsen, J. Yorkston and

R.A. Street

THE POWER LAW DEPENDENCE OF ELECTROLUMINESCENCE

INTENSITY ON FORWARD CURRENT IN a-Si:H p-i-n DEVICESK. Wang, D. Han and M. Silver

TECHNOLOGY AND PERFORMANCE OF TFA (THIN FILM ON ASIC)-SENSORS

H. Fischer, J. Schulte, P. Rieve and M. Bohm

COLOR DOCUMENT IMAGING WITH AMORPHOUS SILICON SENSOR

ARRAYS

R.A. Street, X.D. Wu, R. Weisfield, S. Nelson and P. Nylen

"THICK" a-Si:H p-i-n DIODES, PRODUCED BY THE VHF-GD PROCESS:

SPECTRAL RESPONSE FOR VISIBLE/INFRARED LIGHT AND CURRENT

TRANSIENTS

P. Chabloz, H. Keppner, D. Fischer, N. Wyrsch and A. Shah

a-Si:H/a-SiC:H HETEROSTRUCTURE FOR BIAS-CONTROLLED

PHOTODETECTORS

G. de Cesare, F. Irrera, F. Lemmi, F. Palma and M. Tucci

AUTHOR INDEX

SUBJECT INDEX

xvii