advances in vertical probe material for 200 wafer test applications · 2019. 6. 16. · advances in...

Advances in Vertical Probe Materialfor 200℃ Wafer Test Applications

Author & presenter, Mitsuhiro MoriyamaCo-Author, Stephane Denarnaud

Co-Author, Hiroyuki IchiwaraSV TCL KK, JAPAN

introduction• Application for automobile require test temperatures of 180℃ and

above.• Our B2 vertical standard cards can address the pitch and pin counts for

such devices and has been used up to 150℃

2

B2 probe card SoC / Automotive / 150℃ Fine pitch

Agenda• Current B2 probe at 200℃.• Development of a new material.

– Discoloration– Wire breakage– Wire softening

• Probe material evaluation results.– Head design– General characterization– Durability test

3

First test at 200℃

Probe tip discoloration.The darker tip results in prober alignment errors!

4

Wire sample Probe tip as viewed on the prober

Initial

Afterheating

STD

Other common probe materials

5

We considered most common materials:

STD AgPdCu Rh Ir W

Chemical Discolor NG! OK OK OK OK

MechanicalStiffness OK OK OK NG! NG!

Drawing thin wire OK OK OK NG! OK

ElectricalCCC OK NG! OK OK OK

Cres at high temp OK OK NG! not clear NG!

No suitable material is readily available, we will develop our own!

Process and effective factor

6

1. Alloy Composition

3. Drawing to wirewith some heat treatment

2. Mixing and MeltingCasting to ingot

4. Making probe at Φ35um

Discoloration

Resistivity

Stiffness

Hardness

Strength

Improvement for discoloration at 200℃

7

STDComposition changes

Test1 Test2 Test3 Test4 Test5

We after several composition changes we resolved the discoloration problem

AcceptableAcceptableAcceptable

Process and effective factor

8

1. Alloy Composition

3. Drawing to wirewith some heat treatment

2. Mixing and MeltingCasting to ingot

4. Making probe at Φ35um

Impurity

Segregation

Brittleness

Internal defects

Broken wire

Broken wire in drawing process

9

Impurity defect Wire drawing Probe processing

After several attempts and process improvement breaking wire issues were solved

Process and effective factor

10

1. Composition and additives

3. Drawing to wirewith some heat treats

2. Mixing and MeltingCasting to ingot

4. Making probe at Φ35um

softening

Bending

Heat resistance

5. Probe Evaluation

Softening and Bending under heat • Probed remained bent after OD and high temp.• Hardness changed after prolonged exposure.

11

Bending

0 2 4 6 8 10 12

hard

ness

time(hour)

Vickers hardness degradation

Recrystallization

12

• Recrystallization occurs way below the melting point, typically for pure metals at around 30 to 50% of the melting temperature.

• Coarsened crystals will results in a decrease of hardness and strength.

300℃30分加熱後

After 0.5h at 300℃BeforeTest 4

Summary the alloys tested

13

Wire evaluation Probe evaluation

Alloy Discolor Broken in wire work

Softening under heat

Bending under heat

Test 1 NG - - -Test 2 NG - - -Test 3 OK NG - -Test 4 OK OK NG NG Test 5 OK NG - -

EH OK OK OK OK

Finally we get results!

Evaluation of EH(Extremely High Temp)

probe material

14

LGP

UGP

Wafer

Specification of evaluation probe head

15

Probe

unit EH STD AgPdCu

Probe diameter um 35 35 35

Wire length mm 50 50 50

Probe force gf 2.2 2.7 2.4

Tip shape - Round Round Round

Probe Tip

Evaluation items• Characterization:

– Discoloration (200℃)– Deformation with long contact (200℃)– Contact resistance (-40 ℃, RT, 200℃)– Probe marks (-40 ℃, RT, 200℃)– Current carrying capacity

• Durability test – 1 Million TD (200℃)

16Author

DiscolorationEH color hardly changes, it does not cause alignment error

17

initial 200℃ 5min 200℃ 10min 200℃ 60min

STD

EH

AgcuPd

Acceptable

Acceptable

Deformation with long contactMethod• Apply OD for 20 minutes• Check for probe deformation and measure

probe force

18

EHSTD AgPdCu

ConditionsChuck Temp:200℃Over drive：100umContact time：20min

LGP

UGP

LGP

UGP

WaferWafer

without OD with OD

Probe

Initial

Deformation with long contact/ResultContact at very high temperature results in deformed probe for the standard material and AgPdCu alloy.

EH probe material shows slight deformation only, it provides superior heat resistance to other materials.

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EHSTD AgPdCuEHSTD AgPdCu

AfterBefore

EH

0

1

2

3

0 20 40 60 80 100

Forc

e (gf

)

OD(um)

Probe force

Before After

Recrystallization

20

After 300℃ 0.5hBeforeEH EH

• EH probe material composition results in fine crystals even when exposed to high temperatures.

Test 4 Test 4

02468

10

0 100 200 300 400 500

R（Ω）

CRes (no cleaning) LT

02468

10

0 100 200 300 400 500

R（Ω）

CRes (no cleaning) RT

Contact resistance at room and low temperature

21

EH RTConditionsUF3000EXBlank AL Wafer 8 Inch (Thickness: 1µm)

Impressed Current: 10mATemperature: RT/-40℃OD: 50umTD: 500n=10No cleaning

EH -40℃

The contact resistance is stable at room temperature and low temperature.

02468

10

0 100 200 300 400 500R（

Ω）

CRes (no cleaning) HT

02468

10

0 100 200 300 400 500

R（Ω）

CRes (no cleaning) HT

02468

10

0 100 200 300 400 500

R（Ω）

CRes (no cleaning) HT

Contact resistance at 200℃

22

STD

EH

AgPdCu

ConditionsUF3000EXBlank AL Wafer 8 Inch (Thickness: 1µm)

Impressed Current: 10mATemperature: 200℃OD: 50umTD: 500n=10

Cleaning: No cleaning

02468

10

0 200 400 600 800 1000

R（Ω）

CRes (with cleaning) HT

02468

10

0 200 400 600 800 1000R（

Ω）

CRes (with cleaning) HT

02468

10

0 200 400 600 800 1000

R（Ω）

CRes (with cleaning) HT

Contact resistance at 200℃

23

STD

EH

AgPdCu

ConditionsUF3000EXBlank AL Wafer 8 Inch (Thickness: 1µm)

Impressed Current: 10mATemperature: 200℃OD: 50umTD: 1000n=10

Cleaning: each 200TDSheet type: WA6000-SWEOD: 60umTD: 20

Probe mark

24

RT 200℃ -40℃

Probe mark

Width(um) 7.5 7.1 7.9 8.7 7.1 71

Length(um) 6.5 5.9 7.8 7.4 6.1 6.2

Depth(um) 0.37 0.49 0.46 0.41 0.28 0.35

Small and shallow probe marksBlank AL Wafer 8 Inch (Thickness: 1µm)OD: 50um

Current Carrying Capacity (CCC)

25

ConditionsTemperature: RTOD : 80umTime: 2minn=3 EH

AgPdCu

STD

20％DOWN

CC

C 600m

A

-15

-10

-5

0

5

10

15

-15 -10 -5 0 5 10 15

Initial

-15

-10

-5

0

5

10

15

-15 -10 -5 0 5 10 15

TD 1000k

Durability (1000 kTD)

26

ConditionsUF3000EXBlank AL Wafer 8 Inch (Thickness: 1µm)

Temperature: 200℃OD 80umTD 1millionn=35Cleaning: each 200TD

DY(um)

DX(um)

DY(um)

DX(um)

Probe Tip

Initial 1000 kTD

02468

10

0k 200k 400k 600k 800k 1000k

Plan

arity

(um

)

Planarity

Durability (1000 kTD)

27

After 1000 k TD

ConditionsUF3000EXBlank AL Wafer 8 Inch (Thickness: 1µm)

Impressed Current: 10mATemperature: 200℃OD: 50umTD: 1000n=20

Cleaning: each 200TDSheet type: WA6000-SWEOD: 60umTD: 20

02468

10

0 200 400 600 800 1000

R（Ω）

CRes (with cleaning) HT

02468

10

0 200 400 600 800 1000

R（Ω）

CRes (with cleaning) HT

Initial

28

Item Supporting temperature Result

Discoloration 200℃ Good

Deformation 200℃ Superior

Contact resistance -40℃～200℃ Superior

Probe mark -40℃～200℃ Good

CCC RT 600mA

Durability test 200℃ 1000 kTD

EH probe performance summary

Conclusion

EH probe material is a solution for test up to 200℃

• EH probes provide superior mechanical stability at high temperature.

• EH probe is not subject to discoloration, this prevents prober set-up issue.

• EH provides superior contact resistance stability.

• EH probe low resistivity results in higher CCC than common AgPdCu alloys.

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• Special thanks to our material and wire drawing suppliers for their partnership and relentless efforts and perseverance .

Acknowledgements

30

• Special thanks to the high temperatureprobe project team at Nidec SV TCL for theirhard work & dedication in preparingdata used in this paper:

• Special thanks to management at Nidec SVTCL for their invaluable inputs regardingtopic selection & review of this paper:

– Koji Ogiwara

– Daisuke Miyamoto– Engineering team

– MFG team

Thank you