a.frigo, g.lanza, h.padamsee, v.palmieri, d.tonini · cylindricalpost-magnetron niobium cathode...
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A.Frigo, G.Lanza, H.Padamsee, V.Palmieri, D.Tonini
12th International Workshop on RF Superconductivity
CERN geometry
C. Benvenuti, S. Calatroni, I.E. Campisi, P. Darriulat, M.A. Peck, R. Russo, A.-M. Valente, “Study of the surface resistance of superconducting niobium films at 1.5 GHz”, Physica C 316 (1999) 153-188.
Cylindrical Magnetron
Niobiumcathode
Cavity
Magnet
Q-slope problem
Bulk Niobium
Niobium sputtered film
The INFN-LNL hypothesis
Sputtering at different target-substrate angle
Diploma thesis “Morphology of Niobium Films Sputtered at Different Target-substrate Angles” Diego Tonini, LNL-INFN, Material Science, Padova University.
20 40 60 80 100 120 1400
20
40
60
80
100
3 2 12 2 23 1 0 2 2 0
2 1 12 0 0
1 1 0
75 degrees
60 degrees
45 degrees
30 degrees
15 degreesre
lativ
e in
tens
ity
2 Theta (degrees)
AFM Roughness images XRD spectras
At different target-substrate angle
Diploma thesis “Morphology of Niobium Films Sputtered at Different Target-substrate Angles” Diego Tonini, LNL-INFN, Material Science, Padova University.
At different target-substrate angle
Superconducting propertiesDiploma thesis “Morphology of Niobium Films Sputtered at Different Target-substrate Angles” Diego Tonini, LNL-INFN, Material Science, Padova University.
Increasing level of contamination
At different target-substrate angle
Electrical propertiesDiploma thesis “Morphology of Niobium Films Sputtered at Different Target-substrate Angles” Diego Tonini, LNL-INFN, Material Science, Padova University.
Increasing level of contamination
Comparing Sputtering and Cathodic ArcSputtered films grow along the normal to 110 crystal planesaccording to the atom arrival direction
By cathodic arc, the substrate is biased; so ions always reach the substrateperpendicularly: NO TEXTURE vs target-substrate angle
G. Keppel, V. Palmieri, N. Patron, D. Tonini, LNL-INFN
Understanding:
• Film morphology strictly correlated to the deposition angle
• Electrical and superconducting film properties degrade vsdeposition angle
• Comprehension of sputtering principles is compulsory forconceiving new magnetron configurations
-
Uniformmagneticfield lines
Ve //
Deposition technique: magnetron sputtering
Ve ┴
B
Bc ∝ω
Non-uniformMagnetic field
lines
Deposition technique: magnetron sputtering
• Electron reflection is due to magnetostatic and electrostaticmirror
- -
E
mωTarget
B
Deposition technique: magnetron sputtering
2BBE
D×
∝ω-
Cylindrical Post Magnetron
cathode
-
B
Cylindrical Post Magnetron
cathode
Deposition technique: magnetron sputtering
If
E ┴ B
Higherionisationefficiency
1. Increasing the sputtering rate R
Ideas to improve the film quality:
αα
=+
i ii
i i
NfN R
αi = Impurities sticking coefficient
ƒi = Fraction of impurities trapped into the film
Ni = Number of atoms impurities arriving on the film surface
Target shape
B
Target
Plasma
2 inches planar target
Target shape
Target
Plasma
2 inches squared target
B
Target shape
Target
Plasma
2 inches rounded target
B
200 220 240 260 280 300 3200,5
1,0
1,5
2,0
2,5
3,0
3,5
Planar target b = 6,9
Squared targetb = 8,3
p = 2,5 * 10-2 mbar
Fit: I = a*Vb
Cur
rent
(A)
Cathode potential (v)
Rounded targetb = 9,0
Increasingsputtering
rate
Cathode shape modification
1. Increasing the sputtering rate R
2. Reducing the deposition angle
Ideas to improve the film quality:
Cathode shape modification
Cathode
Cavity
B
• B ┴ E
• B // cathode surface
Higherdeposition rate
Magnet
Niobium ring positioned in the cell center
Cathode shape modification
Cathode shape modification
1. Increasing the sputtering rate R2. Reducing the deposition angle3. Promoting atoms rearrangement and
impurities re-sputtering during film growing
Ideas to improve the film quality:
( )( ) RN
Nfii
iii +−
−=
βαβα
ƒi = fraction of impurities trapped into the film
αi = impurities sticking coefficientNi = atoms impurities arriving on the film β = function of the bias current due to
impurities ionsR = sputtering rate
Biased Diode Sputtering
The bias technique is highly reliable: over 40 QWRs are installed and working at LNL
Bias LNL Up to now
GroundedCavity
MagnetCathode- 250 V
BiasedGrid+200 V
Biased Magnetron Sputtering
Biased grid
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
Biased Magnetron Sputtering
1. Increasing the sputtering rate R2. Reducing the deposition angle3. Promoting atoms rearrangement and
impurities re-sputtering during film growing
4. Increase the cathode/substrate area ratio
Ideas to improve the film quality:
Biased Diode Sputtering
Bias CERN
Low ratio cathode/substrate
area
Low sputtering rate (1 micron /day)
Cavity shaped cathode
High ratio cathode/substrate
area
Cavity shaped cathode
in progress…
Cavity shaped cathode
Conclusion
Three new magnetron sputtering configurations are ready!
...soon 2 cavities to measure.0
Cylindrical Post-Magnetron
Niobiumcathode
Cavity
B
Magnetic field lines followthe cavity shape
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