application note no. 070 - infineon technologies
Post on 22-Nov-2021
1 Views
Preview:
TRANSCRIPT
Appl icat ion Note No. 070High Reverse Isolat ion Ampl i f iers at 900 MHz and 1800 MHz using BGA416
Appl icat ion Note, Rev. 2.0, Jan. 2007
RF & Protect ion Devices
Edition 2007-01-04Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2009.All Rights Reserved.
LEGAL DISCLAIMERTHE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE.
InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Application Note No. 070
Application Note 3 Rev. 2.0, 2007-01-04
TrademarksSIEGET® is a registered trademark of Infineon Technologies AG.
Application Note No. 070
Revision History: 2007-01-04, Rev. 2.0Previous Version: 2000-02-03Page Subjects (major changes since last revision)All Document layout change
Application Note 4 Rev. 2.0, 2007-01-04
Application Note No. 070
High Reverse Isolation Amplifiers at 900 MHz and 1800 MHz using BGA416
1 High Reverse Isolation Amplifiers at 900 MHz and 1800 MHz using BGA416
Features
Figure 1 PIN configuration
1.1 IntroductionThe BGA416 is a monolithic cascode amplifier realized in Infineon Technologies’ SIEGET®25 bipolar process.The cascode amplifier is a popular transistor configuration used in many RF functional blocks such as low noiseamplifiers, voltage controlled oscillators, buffer amplifiers and others for a wide variety of RF and Wireless endproducts.
Figure 2 Schematic Diagram BGA416
• High Maximum Available Gain of 23 dB at 900 MHz• Ultra high reverse isolation of 62 dB at 900 MHz• Integrated on-chip biasing circuit• Low Noise Figure of 1.3 dB at 900 MHzApplications• High Reverse Isolation buffer amplifier for oscillator applications• Low Noise Amplifier for 800 / 900 MHz, GMS900, 900 MHz
ISM, DCS1800, GPS, 1900 MHz PCS, WLAN, UMTS• Active element in oscillator circuits 1
23
4
AN070_pin_connection.vsd
Top View
RFin, 2 3, GND
GND, 1 4, RFout
AN070_schematic.vsd
RFout, 4
RFin, 2 GND, 3
GND, 1
Bias
Application Note No. 070
The BGA416 in a 900 MHz Amplifier Application
Application Note 5 Rev. 2.0, 2007-01-04
The BGA416 features an integrated, on-chip bias circuit that sets the device’s bias point resulting in a low totalparts-count and reduction in required printed circuit board area. RF impedance matching is done off-chip to allowmaximum flexibility, enabling the BGA416 to be used in a wide variety of applications.
2 The BGA416 in a 900 MHz Amplifier Application900 MHz circuit
Figure 3 900 MHz Application Circuit Diagram
2.1 Performance OverviewThe following table shows the measured performance of the application circuit in Figure 3. All measurementvalues presented in this application note include losses of both PCB and connectors - in other words, the referenceplanes used for measurements are the PCB’s RF SMA connectors. Noise figure and gain results shown do nothave any PCB loss extracted from them.
Table 1 Bill of Material of 900 MHz CircuitName Value Unit Package Manufacturer FunctionC1 100 pF 0402 Various DC blockC2 1.2 pF 0402 Various Output matching, DC blockC3 100 pF 0402 Various RF bypassIC1 BGA416 SOT143 Infineon Technologies Si MMICL1 10 nH 0402 Toko LL1005-FH Input matchingL2 10 nH 0402 Toko LL1005-FH Output matching, RF choke
Table 2 Measured Performance Data at 900 MHz and VCC = 3 VParameter Symbol Value UnitSupply current ICC 5.4 mAInsertion power gain |S21|² 20.6 dBNoise figure NF 1.7 dBInput return loss |S11|² 13.9 dBOutput return loss |S22|² 11.6 dBReverse isolation |S12|² 62 dB
AN070_Application_circuit_900MHz.vsd
L310nH
1
2 3
4
IC1BGA416In
L110nHC1
100pF
C41.2pF Out
C3100pF
Vcc
Application Note 6 Rev. 2.0, 2007-01-04
Application Note No. 070
The BGA416 in a 900 MHz Amplifier Application
Figure 4 Insertion Power Gain
Figure 5 Return Loss
Input 1 dB-compression point IP1dB -17.5 dBmInput third order intercept point1) IIP3 -8.8 dBm1) ∆f = 1 MHz; Pin = -35 dBm
Table 2 Measured Performance Data at 900 MHz and VCC = 3 V (cont’d)Parameter Symbol Value Unit
AN070_Gain(f)_900MHz.vsd
17
18
19
20
21
22
0.86 0.88 0.9 0.92 0.94
Frequency [GHz]
Gai
n [d
B]
AN070_Return_Loss(f)_900MHz.vsd
6
8
10
12
14
160.86 0.88 0.9 0.92 0.94
Frequency [GHz]
Ret
urn
Loss
[dB
]
s11
s22
Application Note No. 070
The BGA416 in a 900 MHz Amplifier Application
Application Note 7 Rev. 2.0, 2007-01-04
Figure 6 Reverse Isolation
Figure 7 Stability
AN070_Reverse_Isolation(f)_900MHz.vsd
40
45
50
55
60
65
70
75
800.86 0.88 0.9 0.92 0.94
Frequeny [GHz]
Rev
erse
Isol
atio
n [d
B]
AN070_K_B1(f)_900MHz.vsd
0
2
4
6
8
10
12
14
0 1 2 3 4Frequency [GHz]
K, B
1
K
B1
Application Note 8 Rev. 2.0, 2007-01-04
Application Note No. 070
The BGA416 in a 900 MHz Amplifier Application
Figure 8 Wide Span Gain
Figure 9 Wide Span Return Loss
AN070_Gain(f)_WS_900MHz.vsd
-20-15-10-505
10152025
0 1 2 3 4Frequency [GHz]
Gai
n [d
B]
AN070_Return_Loss(f)_WS_900MHz.vsd
-5
0
5
10
15
20
250 1 2 3 4
Frequency [GHz]
Ret
urn
Loss
[dB
]
s11
s22
Application Note No. 070
The BGA416 in a 1800 MHz Amplifier Application
Application Note 9 Rev. 2.0, 2007-01-04
Figure 10 Gain Compression
3 The BGA416 in a 1800 MHz Amplifier Application1800 MHz Circuit
Figure 11 1800 MHz Application Circuit Diagram
Table 3 Bill of Material of 1800 MHz CircuitName Value Unit Package Manufacturer FunctionC1 270 pF 0402 Various DC blockC2 1.2 pF 0402 Various Output matching, DC blockC3 10 pF 0402 Various RF bypassIC1 BGA416 SOT143 Infineon Technologies Si MMICL1 4.7 nH 0402 Toko LL1005-FH Input matchingL2 2.2 nH 0402 Toko LL1005-FH Output matching RF choke
AN070_Pout(Pin)_WS_900MHz.vsd
-14-12-10-8-6-4-2024
-35 -30 -25 -20 -15Pin [dBm]
P out
[dB
m]
15161718192021222324
Gai
n [d
B]Gain
Pout
AN070_Application_circuit_1800MHz.vs
L32.2nH
1
2 3
4
IC1BGA416In
L14.7nHC1
270pF
C41.2pF Out
C310pF
Vcc
Application Note 10 Rev. 2.0, 2007-01-04
Application Note No. 070
The BGA416 in a 1800 MHz Amplifier Application
3.1 Performance OverviewThe following table shows the measured performance of the application circuit in Figure 11. As mentioned beforeall these values were measured at the SMA connectors of the application PCB.
Figure 12 Insertion Power Gain
Table 4 Measured Performance Data at 1800 MHz and VCC = 3 VParameter Symbol Value UnitSupply current ICC 5.4 mAInsertion power gain |S21|² 12.9 dBNoise figure NF 2.1 dBInput return loss |S11|² 19.4 dBOutput return loss |S22|² 23.9 dBReverse isolation |S12|² 38 dBInput 1 dB-compression point IP1dB -13.5 dBmInput third order intercept point1)
1) ∆f = 1 MHz; Pin = -35 dBmIIP3 -3 dBm
AN070_Gain(f)_1800MHz.vsd
10
11
12
13
14
15
1.7 1.75 1.8 1.85 1.9Frequency [GHz]
Gai
n [d
B]
Application Note No. 070
The BGA416 in a 1800 MHz Amplifier Application
Application Note 11 Rev. 2.0, 2007-01-04
Figure 13 Return Loss
Figure 14 Reverse Isolation
AN070_Return_Loss(f)_1800MHz.vsd
8101214161820222426
1.7 1.75 1.8 1.85 1.9
Frequency [GHz]
Ret
urn
Loss
[dB
]
s11
s22
AN070_Reverse_Isolation(f)_1800MHz.vsd
32
34
36
38
40
421.7 1.75 1.8 1.85 1.9
Frequeny [GHz]
Rev
erse
Isol
atio
n [d
B]
Application Note 12 Rev. 2.0, 2007-01-04
Application Note No. 070
The BGA416 in a 1800 MHz Amplifier Application
Figure 15 Stability
Figure 16 Wide Span Gain
AN070_K_B1(f)_1800MHz.vsd
0
2
4
6
8
10
12
14
0 1 2 3 4Frequency [GHz]
K, B
1
K
B1
AN070_Gain(f)_WS_1800MHz.vsd
-20
-15
-10
-5
0
5
10
15
0 1 2 3 4Frequency [GHz]
Gai
n [d
B]
Application Note No. 070
Application Board and Component Placement
Application Note 13 Rev. 2.0, 2007-01-04
Figure 17 Wide Span Return Loss
Figure 18 Gain Compression
4 Application Board and Component PlacementFigure 19 shows the placement of the particular components on the application board. The element labeled “NA”is not used in the designs described in this application note.Figure 20 displays the cross section of the application PCB. The layer which is actually used for electrical / RFpurposes is the layer with the 0.2 mm FR dielectric thickness. The 0.8 mm RF layer is used solely to providemechanical rigidity and to allow for the use of edge-mount SMA RF connectors.
AN070_Return_Loss(f)_WS_1800MHz.vsd
-5
0
5
10
15
20
25
300 1 2 3 4
Frequency [GHz]
Ret
urn
Loss
[dB
]s11
s22
AN070_Pout(Pin))_WS_1800MHz.vsd
-25
-20
-15
-10
-5
0
-35 -30 -25 -20 -15 -10Pin [dBm]
P out
[dB
m]
10
11
12
13
14
15
Gai
n [d
B]
Gain
Pout
Application Note 14 Rev. 2.0, 2007-01-04
Application Note No. 070
Application Board and Component Placement
Figure 19 Component Placement on the Application PCB
Figure 20 PCB Cross Section
Evaluation boards for the amplifier applications described in this application note are available form InfineonTechnologies.
AN070_Component_Placement.vs
C1 L1
IC1
C2
C3NA
L2
8mm
10mm
RFin RFout
Vcc
AN070_PCB_Cross_Section.vsd
0.8 mm FR4
0.2 mm FR435 µm Cu
35 µm Cu
35 µm Cu
for mechanicalrigidity of PCB
top related