belle-ii meeting nov 09 19. nov. 2009 thomas bergauer (hephy vienna) status of dssd sensors

Belle-II Meeting Nov 09 19. Nov. 2009

Thomas Bergauer (HEPHY Vienna)

Status of DSSD Sensors

Overview

• Prototype DSSDs have been ordered at – Hamamatsu (rectangular shape)

– Micron Semiconductor (wedge shape)

• I will present status of both orders

2Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

3Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

SVD Layout

Rect (122.8 x 38.4 mm , 160 / 50 um pitch)2

Rect (122.8 x 57.6 mm , 240 / 75 um pitch)2

W e dge (122.8 x 57 .6-3 8.4 m m , 240 / 75..50 um p itch)2

0

0

10

3

45

6[cm] layers

[cm]

20

-10-20-30 10 20 30 40

6

z APVs

z APVs

z APVs

64

4

4 4

46

6

6

rphi APVs

rphi APVs

rphi APVs

6

64

4

4 4

4

4

46

666 6

6 6 6

6

Layer # Ladders

Rect. Sensors[50μm]

Rect. Sensors[75μm]

Wedge Sensors

APVs

6 17 0 68 17 850

5 14 0 42 14 560

4 10 0 20 10 300

3 8 16 0 0 192

Sum: 49 16 130 41 1902

RECTANGULAR SENSORSHamamatsu Order

4Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

Hamamatsu Status

• HPK decided to re-start DSSD production– Not only for Belle. They have been pushed also

from other interested (Japanese) parties

• KEK was in contact with Japanese sales representative and engineer

• Beginning of Oct. 2009: Mask Production– Unfortunately without the possibility to add test

structures

• Delivery: March 2010 (<=30pcs.)

5Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

Rectangular DSSD Layout

6Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

• Overall Size:– 124.88 x 59.6 mm

• P-side– 768 long readout strips– 75 micron readout pitch– 37.5 micron strip pitch

(one intermediate strip)– Second row of bonding pads

compatible to Origami bonding scheme

• N-side– 512 short readout strips– 240 micron readout pitch– 120 micron strip pitch

(one intermediate strip)

Rectangular DSSD Specifications

7Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

WEDGE SENSORSMicron Order

8Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

9Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

Micron Semiconductor Ltd.

• Company in Sussex, England, founded 1983• Contact persons:

– Colin Wilburn (Director)– Susan Walsh (Designer)

• Financial:Item Quantity Unit Price Sub Total

Masks 16 2,200 35,200

Probe card 1 1,800 1,800

DSSDs 10 2,000 20,000

Shipping boxes 10 200 2,000

Shipments 5 200 1,000

    Sum € 60,000 (eq. 8M¥)

10Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

Wedge DSSD specifications

• Resistivity: 8 kΩcm (n-type); crystal orientation <100>• Thickness: 300 +/- 10 microns• Full Depletion (FD): 40 volts typical; 70 volts maximum• Operating Voltage: FD to 2x FD• Minimum Breakdown Voltage (10uA): 2.5x FD• Total drain leakage current (20 degrees C): 2uA typical; 10uA

maximum (at 50% rH)

• Polysilicon resistor 15 +/- 5 megohms• Coupling capacitor > 1.2 pF / cm strip length and per microstrip

width (100pF typical)• Interstrip resistance 100MΩ min, 1 GΩ ohm typical (P-Side);

10 MΩ min, 100MΩ typical (N-side)

11Thomas Bergauer (HEPHY Vienna)

Micron Wafer Layout (to be confirmed)

Teststructuresfor p-side

Teststructuresfor n-side(no GCD)

Baby sensor 1p-side: 512 strips 50 µm pitch 1 interm. stripn-side: 512 strips 100 µm pitch 1 interm. strip atoll p-stop

3 different GCDsfor the n-side

Main sensorp-side: 768 strips 75-50 µm pitch 1 interm. stripn-side: 512 strips 240 µm pitch 1 interm. strip combined p-stop

Quadratic baby sensors 2,3,4p-side: 512 strips 50 µm pitch 1 interm. stripn-side: 256 strips 100 µm pitch 0 interm. strip different p-stop patterns

1) atoll p-stopvarying distance from strip

2) conventional p-stopvarying width

3) combined p-stopvarying distance from strip

19. Nov. 2009

Open Points: Guard Ring Design

• We proposed single guard ring with outer n-ring (n_sub) similar to HPK design– 800 micron size

• Micron wants to implement their own multi-guard ring design– Three guard rings– 1000 micron size– Requires NDA signed by us– They do not like n_sub implant;

however, this make IV tests more complicated

12Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

combined

Open Points: p-stop layout

13Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

p-stops connected

p-stops isolated

14Thomas Bergauer (HEPHY Vienna)

Micron Wafer Layout (to be confirmed)

Teststructuresfor p-side

Teststructuresfor n-side(no GCD)

Baby sensor 1p-side: 512 strips 50 µm pitch 1 interm. stripn-side: 512 strips 100 µm pitch 1 interm. strip atoll p-stop

3 different GCDsfor the n-side

Main sensorp-side: 768 strips 75-50 µm pitch 1 interm. stripn-side: 512 strips 240 µm pitch 1 interm. strip combined p-stop

Quadratic baby sensors 2,3,4p-side: 512 strips 50 µm pitch 1 interm. stripn-side: 256 strips 100 µm pitch 0 interm. strip different p-stop patterns

1) atoll p-stopvarying distance from strip

2) conventional p-stopvarying width

3) combined p-stopvarying distance from strip

1)

2)

3)

19. Nov. 2009

15Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

Micron Wedge DSSD - Summary[µm] number pitch Implant

widthAL width AC pad DC Pad Remarks

P strip(readout)

768 75 – 50

14 20 50 x 200

42 x 108

AC pads: 2 rows, staggered

DC pads: 1 row, staggered

N strip(readout)

512 240 30 40 260 x 60

180 x 60

AC pads: 2 rows, not staggered

DC pads: 1 row, not staggered

Bias ring 1 75 95 symmetric

MGR 3 tbd. tbd.

Edge ring

1 tbd. tbd. dicing edge

• One intermediate strip on both p-side and n-side

• Outer dimensions:– Width on top: 60.15 ± 0.05 mm– Width on bottom: 40.60 ± 0.05 mm– Length: 125.11 ± 0.05 mm

• Note: all dimension values are preliminary, i.e. they are subject to discussion and are awaiting final confirmation by Micron!

Schedule

16Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

• Most urgent: agree on open points with Micron to start production as fast as possible

• Wait for delivery– Hamamatsu: end of March 2010– Micron: Summer 2010

Future next steps with prototype DSSDs

• Electrical Characterization in Vienna

• Build Origami module with HPK sensors

• Build full ladder comprising – several Origami modules

– slanted module with Micron sensor

• Testbeam in autumn 2010 at CERN

• Irradiation tests of sensors– Together with electronics?

– Where? When?

17Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

THE END.

18Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

19Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

P-Side, AC and DC pads

AC pads: 50 x 200 µm,2 staggered rows

Marker with 10 µmdiameter (easily

adjustable) on every128th AC pad

• As long as the pad pitch within each row is constant, different pitches in different pad rows do not cause problems for bonding.

DC pads: 42 x 108 µm1 staggered row

20Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

N-Side, P-Stop pattern (implants only)

• According to Y. Iwata et al., this “combined pattern” performs best for a tradeoff between charge collection efficiency and interstrip capacitance.

Individual P-Stop atoll

N+ implantof strip

Additional P-Stop „strip“ splitting theaccumulation layer

21Thomas Bergauer (HEPHY Vienna)19. Nov. 2009

N-Side, AC and DC pads

• AC pad size: 260 x 60 µm, marker on every 128th pad, 2 rows, no staggering• DC pad size: 180 x 60 µm, 1 row, no staggering