chapter 8-1spin/course/102f/ch8-1.pdf · chapter 8-1 . ge si . ... devices based on semiconductors...
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Chapter 8-1
Ge Si
ħ << Eg
(T = 0)
Vertical transition
Direct Transition Indirect Transition
ħ << Eg
Optical absorption to determine the (direct) energy gap of InSb
Direct Transition at 0.23V
OF AN ELECTRON IN AN ENERGY BAND
Without interaction with the crystal potential
With interaction with the crystal potential
Then, summation over all possible G
for a given G
is
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