department of physics,john bardeen, william shockley, walter brattain 1948 bell labs. bipolar...
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Shingo Katsumoto
Department of Physics,
Institute for Solid State Physics
University of Tokyo
Physics of Semiconductors
8th 2016.6.6
Outline today
Review of pn junction
Estimation of built-in potential
Depletion layer width
Injection of minority carriers
Bipolar junction transistor Base-Collector characteristics
Collector-Emitter characteristics
Depletion layer with reverse bias voltage
Effective capacitance and reverse bias voltage
pn junction FET
Schottky barrier
MES FET
MOS FET
Review of pn junctions
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βπ€π π€π
E x
Balance of diffusion and
drift currents.
Minimize πΉ = π β ππ
Depletion layer
Space charge
Built-in electric field
Built-in potential πbi πΈF
Estimation of built-in potential concentration
electrons holes
n-layer
p-layer
number of sites: N number of sites: N
particle number: π1 particle number: π2
Number of cases:
Estimation of built-in potential (2)
Stirling approximation: ln π! β πlnπ β π
:Mixing entropy
Depletion layer width E x βπ€π π€π
πA πD
Current voltage characteristics
External voltage V
Forward bias (against πππ ) : lowers barrier for diffusion current ππ
Equilibrium
Electrons
Current balance
Injection of minority carriers
0
0
V
J
minority carrier
current Barrier overflow
Fate of injected minority carriers:
Radiative recombination
Non-radiative recombination
βπ light emitting
diode
phonon
electron Diffusion with lifetime:
Minority carrier
diffusion length
A question for you
0
0
V
J
Consider an ideal light emitting
diode, which has no non-radiative
recombination. Every injected
carrier emits a photon with the
energy πΈg. Now apply a voltage
π1 < πΈg/π and a current π½1 flows.
The power of light emission is
πL = πΈgπ½1/π . πΈg
π
π1
π½1
On the other hand, the electric power source gives the power
πS = π½1π1, which is smaller than ππΏ! Does the LED create
energy? Or what is happening inside the LED?
External injection of minority carriers: Solar Cells
V
J
0
0
dark
illuminated
ππ£πΞππ
External injection
Two types of transistors
John Bardeen, William Shockley,
Walter Brattain 1948 Bell Labs.
Bipolar junction transistor
n n p
Field effect transistor
p
n
Bipolar transistor structures and symbols
Bipolar transistor structures and symbols
PNP type NPN type
Similar characteristics PNP and NPN: complementary
Base-Collector characteristics
n n p
E B C
βπ½C
βπ½ C
πBC
π½E
πBC
π½E
Base-Collector characteristics
n
p n
πBC
e-
e- e-
e-
e-
e- e+
e+ e+
e+
e+
π½πΈ π½πΆ
Collector-Emitter characteristics n n p
E B C π½πΆ
Current amplification : Linearize with quantity selection
π½πΆ = βπΉπΈ π½π΅
Emitter-common current gain
Linear approximation of bipolar transistor
β β β± β β²
β‘ β½ β β β± β± β β± β² β β² β± β β² β²
β‘ β β β± β β²
β‘ βΊ
π1
π1
π2
β βΆ β± βͺ β²
β‘ β½ β β¨ β± β± β¨ β± β² β¨ β² β± β¨ β² β²
β‘ β βͺ β± βΆ β²
β‘ β½ β β¨ β© β¨ β² β¨ β¦ β¨ β―
β‘ β βͺ β± βΆ β²
β‘
(lower case:
local linear approximation)
Hybrid matrix
h-parameters
π2
Depletion layer width with reverse bias voltage
+ - + +
+
- - -
p n
βπ€π π€π
πππ + π Poisson equation
Depletion layer width with reverse bias voltage (2)
Charge per unit area:
Effective capacitance and reverse bias voltage
V
βπππ
Doping profiler
Varicap diode
KB505 Frequency modulation
Phase lock loop
pn junction field effect transistor (JFET)
Circuit symbols
D
G
S
D
G
S
n-channel p-channel
pn junction FET
y
L
wd (y)
n
p+
2wt S D
G
p+ G
-NDe
Vg
Vch(y)
pinch off (internal) voltage:
Only valid for wd < wt/2.
conductivity
electric field
channel width
I-V characteristics of JFET
2N5459
From Wikipedia
R(Vg) is non-linear
Schottky barrier
πΈF
πππ
πππ
πΈD πΈF
πΈc
πΈv
πΈF
πΈc
πΈv
π€π
metal semiconductor
x 0
- Q
Walter Schottky
1886-1976
Charge balance:
Voltage V --> barrier height e(Vs-V)
MES-FET
MOS-FET
enhancement
depletion
inversion
Simplified
CMOS inverter
circuit
Low leakage
current
Single gate input
both on/off switch
Exercise A
A-1. p-Ge has Seebeck coefficient of 300mV/K and n-type
Bi2Te3 -230mV/K. If one makes a thermocouple from these
two materials, how high is the voltage caused by the
temperature difference of 50K.
A-2. Obtain expressions for electron mobility and for
diffusion constant in terms of the conductivity and the Hall
coefficient.
Submission deadline: 2016.6.20
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