development of hpd （ＨＡＰＤ）

1T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of HPDDevelopment of HPD （ＨＡＰ（ＨＡＰＤ）Ｄ） Photon-detector for thPhoton-detector for th

e Aerogel RICH e Aerogel RICH Development of HPD aDevelopment of HPD a

nd HAPDnd HAPD Ｐｒｏｔｏｔｙｐｅ　Ｐｒｏｔｏｔｙｐｅ　

ＴｅｓｔＴｅｓｔ Readout ElectronicsReadout Electronics ＳｕｍｍａｒｙＳｕｍｍａｒｙ

Aerogel 　 Radiator

Cherenkov photons

Position sensitive

Photon Detector

Concept of the Aerogel RICH

PID upgrade for theforward end-cap region. e- e+

2T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Photon-detectorPhoton-detector for the Aerogel RICH for the Aerogel RICH

ＲｅｑｕｉｒｅｍｅｎｔｓＲｅｑｕｉｒｅｍｅｎｔｓ Can detect a single-photon with high efficiency.Can detect a single-photon with high efficiency. Have sensitivity to Have sensitivity to ～～ 400nm photons from aerogel rad400nm photons from aerogel rad

iators (due to Rayleigh scattering).iators (due to Rayleigh scattering). Can detect the position of photons withCan detect the position of photons with a resolution a resolution ～ ～ a few mm.a few mm. Immune to the high magnetic field (1.5 Tesla).Immune to the high magnetic field (1.5 Tesla).

HPD or HAPDHPD or HAPD may be the best candidates for the Photon-d may be the best candidates for the Photon-detector of the Aerogel RICH.etector of the Aerogel RICH. Fine-mesh PMT: Poor resolution for single photons.Fine-mesh PMT: Poor resolution for single photons. MCP-PMT: 60% collection efficiency.MCP-PMT: 60% collection efficiency.

3T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of HPD and Development of HPD and HAPDHAPD

Develop a multi-anode Develop a multi-anode HPD/HAPD with HPD/HAPD with proximity focus.proximity focus.

Make the effective area Make the effective area as large as possible.as large as possible.

DEP catalogue

Photocathode PD/APDHV

e-Photons

Output8 kV

4T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of HPD and Development of HPD and HAPDHAPD

Outer: 72x72 mm2

Effective : 59x59 mm2 (65%)Multi-anode:12x12=144 ch.Pixel Size: 4.9x4.9 mm2

Multi-anode (144ch) HPD/HAPD are under development in the cooperative work between Belle and HPK.

5T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Ｐｒｏｔｏｔｙｐｅ　ＴｅｓｔＰｒｏｔｏｔｙｐｅ　Ｔｅｓｔ-Single Channel HPD--Single Channel HPD-

Single channel HPDSingle channel HPD Leak current 　　　　　 ： 4 [nA] Detector capacitance 　　： 20 [pF] Gain (8kV) 　　： 1500 [electron/photon] Bias voltage ： 80 [V]

Fig.2 ; single photon response & multi photon response

1pe2pe3pe

4peSensitive area： φ8[mm]

6T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Single-channel Single-channel HPDHPD

Diode : □5 [mm/ch] : □5 [mm/ch] Gain : 26000 [electron/photon]Gain : 26000 [electron/photon] CCdd : 73 [pF] : 73 [pF] IILL : 14 [nA] (average/ch): 14 [nA] (average/ch) Condition: VCondition: VHVHV=8[KV], V=8[KV], VBIASBIAS=320[V]=320[V]

1pe

2pe

3pe

4pe

Ｐｒｏｔｏｔｙｐｅ　ＴｅｓｔＰｒｏｔｏｔｙｐｅ　Ｔｅｓｔ- 3×3multi-channel HAPD - 3×3multi-channel HAPD --

Although the gain of the HAPD is higher thanthe HPD, noise level is also higher due to its large detector capacitance.The HPD shows better single photon resolution.

53 φ

１５ｍｍ

1pe

2pe3pe

4pe

7T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Structure of HPD and Structure of HPD and HAPDHAPD

Two types of photodiodes are under development for the 4x(6x6) type HPD/HAPD.

APD: surface irradiation type. PD ; back irradiation type.

Can reduce dead area btw pixels (0.2->0.1mm)

ppnn

Surface irradiation type Back irradiation type

Photo electron

APD PD

8T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Total gains of HPD and Total gains of HPD and HAPDHAPD

Gain vs PC Voltage.

0

500

1000

1500

2000

2500

0 2 4 6 8 10

Photocathode Voltage [-kV]

Gai

n

0

5000

10000

15000

20000

25000HPD

2,000 at -8kV

HAPD14,000 at -8kV

9T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of HPD and Development of HPD and HAPDHAPD

Leakage current vs Bias voltage.

1E-09

1E-08

1E-07

1E-06

0 50 100 150 200 250 300 350 400

AD Reverse Bias Voltage [V]

Leak

age

Cur

rent

(A)

1E-01

1E+00

1E+01

1E+02

AD

Gai

n

Diode Leakage3x3 summed10nA/pixel

AD Leakage3x3 summed10nA/pixel

AD Gain

10T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Timing structure of HPD and Timing structure of HPD and HAPDHAPD

Rise time

0

20

40

60

80

100

120

0 5 10 15 20 25 30 35 40

Time [ns]

Out

put V

olta

ge [A

rbitr

ary]

Diode (150V)Risetime : 7.3nsFalltime : 3.8ns

AD (320V)Risetime : 1.5 nsFalltime : 19.6 ns

11T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Dead region of HPD and Dead region of HPD and HAPDHAPD

Dead region between the pads.

0

0.2

0.4

0.6

0.8

1

1.2

-0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5Position (mm)

Outp

ut

HPD

HAPD0.16mm

12T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of HPD and Development of HPD and HAPDHAPD

Leakage current before and after activation of PC.

HPD HAPD

Basic performance has been studied with the 3x3 type HPD /HAPD. 3x3 ch HPD

No serious problem Higher EB gain than expected (1500 -> 2100).

3x3 ch HAPD Low yield of good quality APD’s. There is a HV leak from photocathode. High gain but very noisy. Further investigation is underway with a new production 　 batch.

13T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Development of a 12x12 Development of a 12x12 HAPDHAPD

Production of 12x12 multi-anode HAPD. 4x (6x6) APD is assembled in this bulb by a transfer technology.

After the activation many APD’s can’t sustain nominal bias voltage 380V.

73mm

14T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Response of the 12x12 Response of the 12x12 HAPDHAPD

Single Photon Counting(Dark) SHP0016

0

50

100

150

200

250

300

350

400

450

0 500 1000 1500 2000 2500 3000 3500 4000

Output Pulse Height [ADC ch]

Cou

nt

Photocathode Voltage : -7kVAD Reverse Bias Voltage : -380VGuard Voltage : -180VAmplifier : 580KMeasurement ch : chip A - ch22

Response to a single photoelectron and multi-photoelectrons.

Pulse Height Distribution : SHP0016

0

100

200

300

400

500

600

700

800

900

1000

0 500 1000 1500 2000 2500 3000 3500 4000

Output Pulse Height [ADC ch]C

ount

Photocathode Voltage : -7kVAD Reverse Bias Voltage : -380VGuard Voltage : -180VAmplifier : 580KMeasurement ch : chip A - ch22

Single Photoelectron Multi Photoelectron

15T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Uniformity of a 6x6 APDUniformity of a 6x6 APD

12

34

56 6

4

20

0.2

0.4

0.6

0.8

1

Out

put (

Nor

mal

ized

)

Channel x Channel y

12

34

56 6

4

20

0.2

0.4

0.6

0.8

1

EB

gai

n (N

orm

aliz

ed)

Channel x Channel y

Average=1660 (-8kV)

Photocathode EB gain<1660>@-8kV

16T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Uniformity of a 6x6 APDUniformity of a 6x6 APD

Avalanche gain<15>

Total gain<2.6x104>

12

34

56 6

4

20.0E+0

5.0E+3

1.0E+4

1.5E+4

2.0E+4

2.5E+4

3.0E+4

Tota

l gai

n

Channel x Channel y

Average=2.6x104

12

34

56 6

4

20

0.2

0.4

0.6

0.8

1

Ava

lanc

he g

ain

(Nor

mal

ized

)

Channel x Channel y

Average=15 (385V)

17T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Uniformity of a 6x6 APDUniformity of a 6x6 APD

Over all response QE x gain

12

34

56 6

4

20.0

0.2

0.4

0.6

0.8

1.0

Out

put (

Nor

mal

ized

)

Channel x Channel y

Gain=2.6x104

18T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Readout ElectronicsReadout Electronics

Total number of readout channels for theTotal number of readout channels for the full detector amounts to 120k.full detector amounts to 120k. Detector characteristics Detector characteristics

Leakage current 10 or Leakage current 10 or 2525 ［［ nAnA ］］ Detector capacitanceDetector capacitance 　；　； 10 or 10 or 7070 ［［ pp ＦＦ /pixel/pixel ］］ signalsignal ；； 2000 or 2000 or 2000020000 [electron/photon] [electron/photon]

Need high density front-end electronics.Need high density front-end electronics. Need high gain with very low noise amplifiers.Need high gain with very low noise amplifiers. Deadtimeless readout scheme-> Pipeline.Deadtimeless readout scheme-> Pipeline.

Develop an ASIC for the front-end electronicsDevelop an ASIC for the front-end electronics

19T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Basic parameters for the ASIC (Rohm CMOS 0.35[μm])Rohm CMOS 0.35[μm]) Gain ： 5 [V/pC] Shaping time ： 0.15 [μs] VGA ： 1-16 S/N ： 8 (@2000[e]) Readout ： pipeline with shift register Package : 18 channels/chip Control : LVDS Power consumption : 5 m W/channel

Readout ElectronicsReadout Electronics

□4.93[mm]

Made through VDEC

Preamp Shaper VGA Comparator Shift register

20T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

Readout ElectronicsReadout Electronics

Ｃｕｒｒｅｎｔ　 n ｏｉｓｅ　ｐｅｒｆｏｒｍａｎｃｅ ４０００ enc: about twice of SPICE

simulation. It could be made half in the next iteration.

Threshold behavior. It works as expected.

21T. Sumiyoshi (TMU)30, Nov. 2004 ＲＩＣＨ０４@Playa del Carmen

SummarySummary

12x12 HAPD is under development for the photon detectors 12x12 HAPD is under development for the photon detectors of the proximity focusing RICH whichof the proximity focusing RICH which

is a good candidate of the Belle PID system in future. is a good candidate of the Belle PID system in future. There still remains some problems:There still remains some problems:

APD leakage current goes up after the activation of PC.APD leakage current goes up after the activation of PC. Some APD can’t keep nominal bias voltage.Some APD can’t keep nominal bias voltage.

For a readout of many anode signals (120k ch.),For a readout of many anode signals (120k ch.), we have been developing an ASIC. we have been developing an ASIC.

Basic performance was checked by test pulses.Basic performance was checked by test pulses. Need minor modification for a further improvement of noiseNeed minor modification for a further improvement of noise level (current S/N 5 →level (current S/N 5 → 　８）　８） . .