digital integrated circuitshtang/ece4311_doc_f11/... · © digital integrated circuits2nd inverter...

Digital Integrated

CircuitsA Design Perspective

The Inverter

Jan M. Rabaey

Anantha Chandrakasan

Borivoje Nikolic

Revised from Digital Integrated Circuits, © Jan M. Rabaey el, 2003

Propagation Delay

CMOS Inverter Propagation Delay

Vin = VDD

tpHL = f(Ron.CL)

= 0.69 RonCL

ln(0.5)

MOS transistor model for simulation

CGDCGS

CSB CDBCGB

Computing the Capacitances

VDD VDD

VinVout

M4Cdb2

Fanout

Interconnect

VoutVin

SimplifiedModel

Consider each capacitor individually is almost impossible for

manual analysis. What capacitors count in CL?

Computing the Capacitances NMOS and PMOS transistor are either in cutoff or

saturation mode during at least the first half (50%) of the

output transient.

So, the only contributions to Cgd are the overlap

capacitance, since channel capacitance occurs between

either Gate-Body for transistors in cutoff region or Gate-

Source for transistors in saturation region.

The Miller Effect

Vout V

“A capacitor experiencing identical but opposite voltage swings at both its terminals can be replaced by a capacitor to ground, whose value is two times the original value.”

The lumped capacitor model requires the floating Cgd1

capacitor be replaced by a capacitor to GND using Miller

effect.

The Miller Effect Consider the situation that an impedance is connected

between input and output of an amplifier

The same current flows from (out) the top input terminal if animpedance is connected across the input terminals

The same current flows to (in) the top output terminal if animpedance is connected across the output terminal

This is know as Miller Effect

Two important notes to apply Miller Effect: There should be a common terminal for input and output

The gain in the Miller Effect is the gain after connecting feedbackimpedance

MillerinZ ,

MilleroutZ ,

Graphs from Prentice Hall

Computing the Capacitances

The capacitance between drain and bulk, Cdb1 and Cdb2, are due to the reverse-biased pn-

junction.

Such a capacitor is, unfortunately, quite nonlinear and depends heavily on the applied voltage.

In Chapter 3 we replaced the nonlinear capacitor by a linear one with the same change in

charge for the voltage range of interest. A multiplication factor, Keq, is introduced to relate the

linearized capacitor to the value of the junction capacitance under zero-bias conditions

(usually in the range of 0.6 to 0.9).

Junction Capacitance

Linearizing the Junction Capacitance

Replace non-linear capacitance bylarge-signal equivalent linear capacitance

which displaces equal charge over voltage swing of interest

Polysilicon

Metal1

9λ/2λ

3λ/2λ

ADp=45 λ2

PDp=19 λ

ADn=19 λ2

PDn=15 λ

Junction Capacitance Ls (from Ch. 3)

Bottom

Side wall

Channel

SourceND

Channel-stop implantN A

Substrate NA

Junction capacitance per unit area

No channel side

Junction capacitance

per unit length

Computation of all capacitors

Cdb will be slightly different

in L-to-H and H-to-L, why?

(the pn junction reverse bias

voltage range)

Intrinsic

extrinsic

0 0.5 1 1.5 2 2.5

x 10-10

t (sec)

Vout(V

Transient Response

tp = 0.69 CL (Reqn+Reqp)/2

tpHLtpLH

Cgd directly couples the steep input change before the circuit can even start

to react to the changes at input (potential forward bias the pn junction)

Low-to-High and High-to-Low delay

It is desired to have identical propagation

delays for both rising and falling inputs.

Equal delay requires equal equivalent on-

resistance, thus equal current IDAST

(neglecting the channel length modulation)

This demands almost the same

requirements for a Vm at VDD/2. Why?

TpDDDSATpppDp

DSATnTnDDDSATnnnDn

DSATDSATTDDDSAT

)/(then

2/ Assume

DSATnn

DSATpp

nDSATnn

pDSATpp

DSATpTpDD

This is exactly the formerly defined parameter r (last lecture)

Requirements for equal delay

Design for delay performance

Keep capacitances small

• careful layout, e.g. to keep drain

diffusion as small as possible

Increase transistor sizes

• watch out for self-loading! When

intrinsic capacitance starts to

dominate the extrinsic ones

Increase VDD (????)

Delay as a function of VDD

0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.41

Recall a range

of low voltage

is able to give

even better

voltage transfer

characteristic

For fixed (W/L)

2 4 6 8 10 12 142

3.8x 10

Device Sizing

(for fixed load and VDD)

Self-loading effect:Intrinsic capacitancesdominate

1 1.5 2 2.5 3 3.5 4 4.5 53

NMOS/PMOS ratio

tpLH tpHL

tp b= Wp/Wn

Widening PMOS improves the L-H delay by increasing the charge current,

but it also degrades the H-L by giving a larger parasitic capacitance.

Considering average is more meaningful!!

(Average)

Delay Definitions

Impact of Rise Time on Delay

trise (nsec)

10.80.60.40.20

Custom design

process:

An inverter design

example

1. Schematic design

2. Layout design

Step 1: define Nwell (for PMOS)

Step 2: define pselect (for PMOS location)

Step 3: define active region (for PMOS)

Step 4: define poly (gate for PMOS)

Step 5: define contacts (for PMOS)

Step 6: define Vdd and connect source (of PMOS) to it

Step 7: make at least one Nwell contact

Step 8: create NMOS (repeat similar steps before

except you do not need make Nwell)

step9: make input and output connections

2. DRC (Design Rule Check)

Correct error if there is any

After correction

3. LVS (Layout versus Schematic)

4. Extract Layout parasitics and post-layout simulation

CMOS Inverter

Polysilicon

In Out

PMOS2l

Metal 1

Contacts

N Well

Two Inverters

Connect in Metal

Layout preference:

Share power and ground

Abut cells

Impact of Process Variations (DFM)

0 0.5 1 1.5 2 2.50

Good PMOSBad NMOS

Good NMOSBad PMOS

Nominal

Inverter Sizing

for delay

Inverter with Load

Cint CL

Delay = kRW(Cint + CL) = kRWCint + kRWCL

= Delay (Internal) + Delay (Load)

= kRW Cint(1+ CL /Cint)

W means the size is increased by a factor of W with

respect to the minimum size

Delay as function of size

• Intrinsic delay is fixed and independent of sizeW

• Making W large yields better performance gain, eliminating the

impact of external load and reducing the delay to intrinsic only. But

smaller gain at penalty of silicon area if W is too large!

))/(1(0 unitLpp WCCtt

RW = Runit / W ; Cint = W Cunit

tp0 = 0.69RunitCunit

Delay = kRW Cint(1+ CL /Cint)

= Delay (Internal) + Delay (Load)

Delay Formula

0int ftCCCkRt

CCRDelay

pintLWp

Cint = Cgin with 1 for modern technology(see page199 in book or Slid 14 for an example)

Cgin : input gate capacitance

CL = f Cgin - effective fanout

This formula maps the intrinsic capacitor and load

capacitor as functions of a common capacitor,

which is the gate capacitance of the minimum-size

inverter

Single inverter versus inverter chain

Gate sizing for an isolated gate is

not really meaningful. Realistic chips

always have a long chain of gates.

So, a more relevant and realistic

problem is to determine the optimal

sizing for a chain of gates.

Inverter Chain

If CL is given:

- How many stages are needed to minimize the delay?

- How to size the inverters?

In Out

Apply to Inverter Chain (fixed N stages)

In Out

tp = tp1 + tp2 + …+ tpN

unitunitpjC

i jgin

jpp CCC

Unit size (minimum size) inverter

Size ? Size ?

Optimal Tapering for Given N

Delay equation has N - 1 unknowns, Cgin,2 – Cgin,N

Minimize the delay, find N - 1 partial derivatives equated to 0

Result: Cgin,j+1/Cgin,j = Cgin,j /Cgin,j-1

Size of each stage is the geometric mean of two neighbors

- each stage has the same effective fanout

- each stage has the same delay

1,1,, jginjginjgin CCC

Optimum Delay for fixed N stages

1,/ ginL

N CCFf

When each stage is sized by f and has same effective

fanout f:

Minimum path delay

Effective fanout of each stage:

) / 1(

i jgin

jpp FNtC

effective fanout

of the overall

circuit

Example

CL= 8 C1

In Out

C11 f f2

CL/C1 has to be evenly distributed across N = 3 stages:

Optimum Number of Stages

For a given load CL and given input capacitance Cin

Find optimal sizing f

fFtFNtt

pplnln

1lnln2

For = 0, f = e, N = lnF

FNCfCFC in

ln with

ff 1exp

Optimum Effective Fanout fOptimum f for given process defined by

ff 1exp fopt = 3.6 for =1

Impact of introducing buffers

pp FNtt fopt = 4

Buffer Design

N f tp

1 64 65

2 8 18

3 4 15

4 2.8 15.3

Intel Itanium Microprocessor

CARRYGEN

SUMGEN

1000um

sum sumb

LU : Logical

to Cache

GItanium has 6 integer execution units like this

digital integrated circuitshtang/ece4311_doc_f11/... · © digital integrated circuits2nd inverter...

Documents

db1 subapp instructions en 100326 - bowers &...

the precise measuremient of small capacitances-tbt

swift db1- sportscar0308

analysis and modeling of parasitic capacitances in

potential distribution over suspension insulators … ·...

p-n junction capacitances part i: the … bound... · p-n...

introduction to relational database...

db1 command codes v3.pdf - bowers & wilkins · db1...

drive basics - db1

wpp2010 db1 f20 population growth rate

v091013 db1 oh&s issues for the board-09-10-13

demographic db1

modeling of conducted common mode perturbations in variable...

capacitances extraction for multilayer conductor...

acura integra da9, db1, db2(93) service manual.pdf

ezviz db1&db2, 3mp ultra hd wi-fi battery doorbell … ·...

db1 db1 standard bushings — standard locknuts...

kinds_structure of db1

analysis of stray capacitances in compact marx generators

part 1 â€“ adding the db1 as a new device