diode sensor lab dr. lynn fuller
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© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 1
Rochester Institute of Technology
Microelectronic Engineering
ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING
Diode Sensor Lab
Dr. Lynn FullerWebpage: http://people.rit.edu/lffeee
Microelectronic EngineeringRochester Institute of Technology
82 Lomb Memorial DriveRochester, NY 14623-5604
Tel (585) 475-2035Fax (585) 475-5041
Email: Lynn.Fuller@rit.eduDepartment webpage: http://www.microe.rit.edu
4-16-2013 Diode_Lab.ppt
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 2
Rochester Institute of Technology
Microelectronic Engineering
OUTLINE
RIT MEMS Bulk Process
MEMS Sensor Chip Layout
Heater I-V Characteristics
Diode Sensor I-V Characteristics
Response to Heater
Response to Light
LED I-V Characteristics
Diode Optical Communication Link
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 3
Rochester Institute of Technology
Microelectronic Engineering
RIT MEMS BULK PROCESS
1 P+ Diffused Layer (90 Ohm/sq)
1 N+ Layer (50 Ohm/sq)
1 N-Poly layer (40 Ohm/sq)
1 metal layer (Al 1µm thick)
30-40 µm Si diaphragm
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 4
Rochester Institute of Technology
Microelectronic Engineering
MEMS SENSORS CHIP LAYOUT
Photo Diode
Poly Heater
Diode Temperature Sensor
Thermocouple
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 5
Rochester Institute of Technology
Microelectronic Engineering
CLOSE UP OF MEMS SENSORS CHIP
Photo
Dio
de A
rea =
1m
m X
1.5
mm
Heater L/W = 225µm/200µm
Poly Heater, Buried pn Diode,N+ Poly to Aluminum Thermocouple
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 6
Rochester Institute of Technology
Microelectronic Engineering
SHOWS DEVICES ARE ON A DIAPHRAGM
Vacuum applied to back of chip
Diaphragm bends down
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 7
Rochester Institute of Technology
Microelectronic Engineering
HEATER RESISTOR I-V CHARACTERISTICS
R = Rhos L/W
find Rhos
R= 1/1.34E-2
= 74.7 ohms
Poly Heater, Buried pn Diode,N+ Poly to Aluminum Thermocouple
P+
N+
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 8
Rochester Institute of Technology
Microelectronic Engineering
DIODE I-V CHARACTERISTICS
Poly Heater, Buried pn Diode,N+ Poly to Aluminum Thermocouple
P+
N+
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 9
Rochester Institute of Technology
Microelectronic Engineering
PACKAGED DIODE TEST CHIP
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 10
Rochester Institute of Technology
Microelectronic Engineering
DIODE TEMPERATURE SENSOR RESPONSE
Apply 5 volts (gives ~ 65mA)
P=IV =0.3 watts
Delta Vd = 0.64 -0.48 = 0.16
Delta T = 0.16 / 2.2mV = 72.7 °C
Poly Heater, Buried pn Diode,N+ Poly to Aluminum Thermocouple
P+
N+
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 11
Rochester Institute of Technology
Microelectronic Engineering
SPICE FOR DIODE TEMPERATURE SENSOR
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 12
Rochester Institute of Technology
Microelectronic Engineering
TEST SETUP
Take data for room T up to 100°C
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 13
Rochester Institute of Technology
Microelectronic Engineering
TEMPERATURE TEST DATA
Temperature vs Dial Setting
0
20
40
60
80
100
120
0 1 2 3 4 5 6
Dial Set ting
Tem
pera
ture
(°C
0
Diode Vol tage vs Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 20 40 60 80 100 120
Temperature ( °C)
Dio
de
Vo
ltag
e (V
olt
s)
I
V
T1T2
T1<T2
Dial Vdiode Temp
0 0.6539 20
0.5
1
1.5
2 0.601 54.5
2.5
3 0.5747 71
3.5 0.556 83
4 0.543 90
4.5 0.5246 100
5 0.51 108.5
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 14
Rochester Institute of Technology
Microelectronic Engineering
Diode Voltage Buffer Gain and
Inversion
Level Shifting and Buffer
SIGNAL CONDITIONING CIRCUIT
Signal Conditioning CircuitImproves the sensitivity to changes in temperature
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 15
Rochester Institute of Technology
Microelectronic Engineering
TEMPERATURE TEST RESULTS OF WATER
Temperature SensorVoltage Output vs. Temperature
400
680
500
y = -18.895x + 1125
R2 = 0.9906
300
400
500
600
700
800
20.0 25.0 30.0 35.0 40.0 45.0
Temperature (C)O
utp
ut
Sig
na
l (m
V)
Measurement of Amplified and ShiftedDiode Voltage in Different Temperature Water Baths
The output changes by -19 mV/°C
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 16
Rochester Institute of Technology
Microelectronic Engineering
SEEBECK EFFECT
When two dissimilar conductors are connected together a voltage may be generated if the junction is at a temperature different from the temperature at the other end of the conductors (cold junction) This is the principal behind the thermocouple and is called the Seebeck effect.
∆V
Material 2Material 1
Hot
Cold
Nadim Maluf, Kirt Williams, An Introduction to
Microelectromechanical Systems Engineering, 2nd Ed. 2004
∆V = α1(Tcold-Thot) + α2 (Thot-Tcold)=(α1-α2)(Thot-Tcold)
Where α1 and α2 are the Seebeck coefficients for materials 1 and 2
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 17
Rochester Institute of Technology
Microelectronic Engineering
THERMOCOUPLE TEMPERATURE SENSOR
VoltMeter
Heater TC Output DiodeVolts Volts Volts0 ~0 0.71 … ….2 … ….3 … ….4 … ….5 ~15mV 0.55
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 18
Rochester Institute of Technology
Microelectronic Engineering
PHOTO DIODE RESPONSE TO LIGHT
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 19
Rochester Institute of Technology
Microelectronic Engineering
PHOTO DIODE RESPONSE TO LIGHT
No light
Full light
~ Max Power Out
P=IV = (7.09e-5)( 0.4)
=28.4µwatts
P/unit area =
28.4e-6/1500e-6/1000e-6
= 18.9watt/m2
No Light and Max Light Using 8X Objective Lens
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 20
Rochester Institute of Technology
Microelectronic Engineering
UV LED AND PHOTO DIODE SENSOR
20K
3.3V
Gnd
UV LED
R1
20K
+p
n
Vout
0 to 1V
R2
I
Gnd
3.3V
-3.3+
R4
100K
3.3V
-3.3
R3
10K
NJU703NJU703
Material Characterization
by UV Light Absorption
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 21
Rochester Institute of Technology
Microelectronic Engineering
PHOTO DIODE I TO V LOG AMPLIFIER
+
p
nVout
0 to 1V
I
Gnd
3.3V
-3.3
NJU7033.3V
Gnd
IR LED
R1
20K
1N4448
Vout vs. Diode Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01 0.1 1 10 100 1000 10000
Diode Current (uA)
Ou
tpu
t V
olt
ag
e (V
)
Linear AmplifierLog Amplifier
Linear amplifier uses 100K ohm in place of the 1N4448
Photodiode
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 22
Rochester Institute of Technology
Microelectronic Engineering
PHOTO DIODE I TO V INTEGRATING AMPLIFIER
Rf
-+
Ri-+
C
Reset
Internal
100 pF
Analog Vout
Integrator and amplifier allow for measurement at low light levels
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 23
Rochester Institute of Technology
Microelectronic Engineering
TURBIDITY
Turbidity = loss of transparancy due to the presence of suspended solids, water < 1-5 NTU (Nephelometric Turbidity Units), measured by a nephelometer or turbidimeter, which measures the intensity of light scattered at 90 degrees as a beam of light passes through a water sample.
+
Sensor Chip With Photodiode
p n
Vout = IR
PCB
LED
R
I
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 24
Rochester Institute of Technology
Microelectronic Engineering
LED IV CHARACTERISTICS
VD
ID
2.0
LED
-10.0
Light
Flat
n
p
Light Emitting Diode -LED
- Va +
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 25
Rochester Institute of Technology
Microelectronic Engineering
TURBIDITY
Infrared LED
Photocell
Packaged Sensor Chip and LED Sensor Chip
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 26
Rochester Institute of Technology
Microelectronic Engineering
IR LED
Digital Cameras can see the light from an
infrared LED that the human eye can not see
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 27
Rochester Institute of Technology
Microelectronic Engineering
TURBIDITY – SIGNAL CONDITIONING CIRCUIT
Photo-Current to
Voltage
Gain and Level Shifting
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 28
Rochester Institute of Technology
Microelectronic Engineering
TURBIDITY TEST RESULTS
Turbidity Standards
Plot of output voltage for different
standard turbidity samples
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 29
Rochester Institute of Technology
Microelectronic Engineering
MICRO SPECTRO RADIOMETER
300 400 500 600 700
1.0i-line, 365 nm
g-line, 436 nm
0.5
0.0
Wavelength (nm)
h f
e
Light
clock
Electronics Output
DiodesPhotodiode Number
Diffraction
Grating
Acknowledgments:Marion Jess, Visiting Scholar from GermanyWessel Valster, Student of Hogeschool Enschede,The NetherlandsZoran Uskokovic, RIT, graduate student in MicroE
Plasma Etch Endpoint Detection
Nanospec Like Film Thickness
Light Source Characterization
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 30
Rochester Institute of Technology
Microelectronic Engineering
DIFFRACTION GRATING
Light is diffracted intoa series of intensity spots
called diffraction orders
a a
1
1st3rd
2nd
1st3rd
2nd
ξξξξ
r1
d
S
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 31
Rochester Institute of Technology
Microelectronic Engineering
CALCULATIONS
Grating of 2 um lines and 2 um space gives S=4 um
k is the diffraction order
λ is wavelength
The angle ξsin ξ = k λ / n S
and
tan ξ = r/d
for d = 1000um, and n = 1.5 for glass
ξ1 ξ2 r1 r2
350 nm 3.34 6.71 58um 117um
550 nm 5.24 10.6 92um 187um
750 nm 7.17 14.5 126um 259um
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 32
Rochester Institute of Technology
Microelectronic Engineering
Diffraction Grating
I/O Pads
128 Ion Implanted p+ diode
Photo Detectors
n-type silicon
1mm Glass
Analog Switches
Multiplexer
Shift Registers
MICRO-SPECTRO-RADIOMETER
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 33
Rochester Institute of Technology
Microelectronic Engineering
FIRST TEST CHIP
Marion Jess
1996
Shielded area
Pads to 128 diodes
Photo diodes
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 34
Rochester Institute of Technology
Microelectronic Engineering
RESULTS OF FIRST TEST CHIP
Measurements from 128 diodes
illuminated through different
color filters
Photodiode Current vs Voltage
Some Light
More Light
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 35
Rochester Institute of Technology
Microelectronic Engineering
SWITCHES
7 BIT COUNTER
ClockReset
Analog out
Sync pulse
(at 0000000B)Sync
D1
D2
D4D3
D8
D5
D6
D7
A A B B C C128 P
HO
TO
DIO
DE
S
A….G
MICRO-SPECTRO-PHOTOMETER ON CHIP ELECTRONICS FOR ELECTRONIC READOUT
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 36
Rochester Institute of Technology
Microelectronic Engineering
POLY GATE PMOS + DEPLETION MODE IMPLANT MULTIPLEXER
A
A’
B
B’C
C’
D0D7
Rf
-+Ri
CReset
Internal
100 pF-+ Vout
7 B
it C
ounte
r
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 37
Rochester Institute of Technology
Microelectronic Engineering
SECOND TEST CHIP
T Type FF
Binary Counter
Multiplexer
Photodiodes
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 38
Rochester Institute of Technology
Microelectronic Engineering
REFERENCES
1. Micromachined Transducers, Gregory T.A. Kovacs, McGraw-Hill, 1998.
2. Microsystem Design, Stephen D. Senturia, Kluwer Academic Press, 2001.
3. IEEE Journal of Microelectromechanical Systems.
© April 16, 2013 Dr. Lynn Fuller
Diode Lab
Page 39
Rochester Institute of Technology
Microelectronic Engineering
HOMEWORK – DIODE SENSOR LAB
1. Calculate the sensitivity (mV/°C) from the data on page 13.
2. Calculate reasonable values to fill in the table on page 17. state your assumptions and show equations you used.
3. Calculate the gain (V/µA) of the signal conditioning circuit on page 20.
4. Write an expression for the output voltage of the circuit on page 21 and 22.
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