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1

Distributed Active Decoupling Capacitors for On-Chip Supply Noise Cancellation in Digital VLSI Circuits

Jie Gu, Ramesh Harjani and Chris H. Kim

Department of Electrical and Computer EngineeringUniversity of Minnesota, Minneapolis

jiegu@umn.edu

2

Outline

• Introduction

• Proposed active decap circuits

• Simulated supply noise suppression

• Test chip implementation

• Supply noise measurement results

• Conclusion

3

Power Supply Noise• Current density keeps increasing• Wire impedance does not scale as desired• Larger IR and Ldi/dt noise in scaled technology• Causes timing, substrate noise, reliability issues

Technology Generation (nm)130 115 100 90 80 70 60Ti

min

g Im

pact

(%)

02468

1012

M. Saint-Laurent, Intel

4

Problematic Decoupling Capacitor• 15% to 20% of die area occupied by decaps in

high-end microprocessor• 10% of total power due to decap leakage

T. Mak, Intel

Total Power @ T=30°C/Vcc=1.15V

Transistor Leakage Decap Leak.20%

10%Active Power

Transistor Gate Leakage

Burn-In Condition @ T=100°C/Vcc=1.61V

80%-75% 20%-25%Leakage Power

5

Principle and Design Target

• New circuit technique to boost decap value• Decap area reduction• Self-biasing for implementation in digital IC

A(ω)

Cload (Miller Capacitor)

(A(ω) +1)Cload

VDD VDD

Gnd

+

Cload

GndGnd

A(ω)−

+

6

Previous Work

Analog Area

• Active decap for crosstalk suppression (T. Tsakada, JSSC, 2005)

• On-chip voltage regulator using switched decaps(M. Ang, ISSCC, 2000)

7

Proposed Use of Active Decap in Digital IC

8

Design of Active Decap Circuits

• 10MHz~2.7GHz

• Current: 3.8mA

• C-coupled inputs

• Self-biasing

• On/Off switch

9

Pdecap

Adecap_10pF

Adecap_20pF

Pdecap10pF20pF40pF80pF120pF150pF

Simulated Decoupling Effects0.18µm, 25°C, 1.8V

• Decap boost 4x ~ 11x up to 1GHz• Small pdecap required for high frequency noise

10

Test Chip Organization

• Scan chain to activate each module of circuits• Selection of different values of pdecap and adecap• Adecap sensor to measure differential noise

11

Noise Generation CircuitsNoise Injection CircuitsLFSR Circuits

• Capable of adjusting supply noise shape and frequency• Noise injection circuit can produce more ideal noise waveforms for testing purposes

12

Supply Noise SensorsGnd sensorVDD sensor

T. Okumoto, VLSI Symp., 2004

• Placed at different locations• Adecap sensor for differential supply noise

13

Measurement ResultAdecap Off Adecap On

150MHz150MHz

6dB Reduction

• Noise injection circuit clocked at 150MHz• Resonant supply noise at 70MHz• 6dB reduction of supply noise using adecap

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0 0.1 0.2 0.3

-0.05

0

0.05

Gnd

(V)

0 0.1 0.2 0.3

1.75

1.8

1.85

VDD

(V)

0 0.1 0.2 0.30

0.5

1

t (µs)

Diff

. Noi

se (V

)

w/o Decap 10pF Adecap

w/o Decap 10pF Adecap

w/o Decap 10pF Adecap

Measurement Results: Supply Noise Waveform

15

Measured Decoupling Effect: Pdecap vs Adecap

(Noise generated by LFSR circuits)

16

Local Supply Noise Measurement

• Larger noise at location closer to noise source

17

Switching On/Off Active Decaps

• Ton ~ 200ns (can be improved to less than 10ns)• Toff < 10ns

18

Die Photograph

Technology 0.18µmVDD 1.8V

Passive Decap (10pF) 44µm×41µm

Active Decap (10pF)25µm×44µm

(40% reduction)

19

Conclusions• Passive decap occupies large area and

consumes gate tunneling leakage

• Self-biased active decoupling capacitor circuits proposed to boost decapperformance

• 4x ~ 11x boost in decap value up to 1GHz with 40% area saving

• Decap gating capability was tested for power saving

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