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Electronic Properties ofElectronic Properties of Metal-Insulator Interfaces
Hermann Kohlstedt
Forschungszentrum JülichInstitut für Festkörperforschung
GermanyGermany
Tutorial September 2008 Barcelona_H. Kohlstedt1
Famous Comments about Surfaces and Interfaces
Wolfgang Pauli"God made solids but surfaces (and interfaces) were the work of the Devil "God made solids, but surfaces (and interfaces) were the work of the Devil.
This (very popular) quotation exists in a great variety of versions.
...in such a way the transition region or interface between the Herbert Kroemer
Nobel Lecture: Quasielectric fields and band offsets:
different materials plays an essential role in any device action. Often, it may be said that the interface is the device.
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks, Rev. Mod. Phys. 73 (2001).
Tutorial September 2008 Barcelona_H. Kohlstedt2
The MOSFET as an ExampleThe MOSFET as an Example
Others:Others:Laser Diode, Giant Magneto Resistance (GMR) DeviceMagnetic Tunnel Junctions, pn-Diode, Josephson junctions...
Tutorial September 2008 Barcelona_H. Kohlstedt3
1 The MOSFET
Metal Oxide Semiconductor Field Effect Transistor
Tutorial September 2008 Barcelona_H. Kohlstedt4
A Historical Remark
19261926MOSFET Patent: J. E. Lilienfeld, US Patent 1.745.173 (1930)
19461946Bipolar transistor?
1960First working MOSFETD Kahng and M M Atalla Pittsburgh 1960
Tutorial September 2008 Barcelona_H. Kohlstedt5
D. Kahng and M.M. Atalla, Pittsburgh 1960
Computer: An Interface Story1959 first planar transistor
1961 first integrated circuit (IC)
1964 IC5 transistors
1968 IC array 180 Transistors
1978 CPU20000 transistors
1985 CPU 200000 transistors
2000 CPU - Pentium III 28.000.000 transistors
2008820 Millionen Transistors
Tutorial September 2008 Barcelona_H. Kohlstedt6
The Metal Oxide Semiconductor Capacitor
MOS-Capacitor
Work functionGate metalSiO2
Work functionEnergy gapBand structure
Silicon (Si) Interface statesDefectsDevice fabricationDevice fabrication...
Why it took more than 30 years to realize a MOSFET?
...the MOS cap was a „hard nut“ - in preparation and in understanding!!
Tutorial September 2008 Barcelona_H. Kohlstedt7
...the MOS cap was a „hard nut in preparation and in understanding!!
High Resolution TEM of Gate StackTEM: Transmission Electron Microscopy
Gate
SiO2
Channel
Tutorial September 2008 Barcelona_H. Kohlstedt8
D. A. Buchanan, IBM J. Res. Develop. 43, 245 (1999)
Surface and Bulk Atoms
„Atom“1 nm
0.3 nm
1
1 nm0.3 nm
0.3 nm
1 nm
1 nm 1µm 1 mm
nVvolume atoms: 1 2 x 1010 2 x 1019
ns surface atoms: 26 5 x 107 5 x 1013
RelationnV/(nV+nS): 0.96 2 x 10-3 3 x 10-6
Tutorial September 2008 Barcelona_H. Kohlstedt9
Corner Atoms: 8 8 8
Down scaling increase importancs of surface!!
Outline
Vacuum
Bulk Metal
Vacuum StepAdsorbate
Metal
Metal 2 Semiconductor Metal Ferromagnet
Metal 1
Metal 2
Metal
/Insulator
Metal
Ferroelectric
Ferromagnet
Ferroelectric
Metal Ferromagnet
Tutorial September 2008 Barcelona_H. Kohlstedt10
Bulk MetalMetal
Tutorial September 2008 Barcelona_H. Kohlstedt11
Energy Bands in Solids
Free electrons
ESchrödinger equation:
Ene
rgy
d2 ψ+
2 mψ [ E V( )] 0
V = V(x); only space dependence
ctro
n E
dx2 + h2
ψ [ E – V(x)] = 0
Ele
cSolution for V = 0: free electron
2 Wavevector k E = h2 k2
2 m
Tutorial September 2008 Barcelona_H. Kohlstedt12
Confined Electron
En = h2 π 2
2 m L2n2
8 8
E Ψn=4
2 m LEigenenergies
rgy
E
E4
E
Ψ4
ergy
E
n=3
ectro
n en
e E3
E2
Ψ3
Ψ2ectro
n en
e
n=2
0 L
Ele
E1 Ψ1
2
Ele
n=1
0 L 0 L
Tutorial September 2008 Barcelona_H. Kohlstedt13
Finite Barrier Height
Ψ, VV = V00
Outside the box due to
xquantum mechanical tunneling
n = 1
Tutorial September 2008 Barcelona_H. Kohlstedt14
Kronig-Penny Model (1930)
A simple model to study the electron wave propagation in a crystal (1D)
V(x)V0
V(x) V(x) = V0 -b < x < 0
V(x) = 0 0 < x < a
x-b 0 a Atom
positions
Solution by solving the Schrödinger equation:
( )sin α a m: electron mass
positions
cos k a = cos α a + γ a ( )sin α aα a
γ =m V0 b α =
(2 m E)1/2
m: electron mass
h : Planck constant
Tutorial September 2008 Barcelona_H. Kohlstedt15
γ = h2
α = h E: energy of the electron
Solutions of the Kronig-Penny Model
XX = cos α a + γ a ( )sin α a
α a2
1 allowed values
π 2 π 3 π 4 π
α a-1
of cos k a
-2γ a = π
Tutorial September 2008 Barcelona_H. Kohlstedt16
Kronig-Penny Model: Formation of Energy Bands
Energybandsn
Ene
rgy E
bands
Ele
ctro
n
2π/a-2π/a π/a-π/ak
2π/a-2π/a π/a-π/a
Tutorial September 2008 Barcelona_H. Kohlstedt17
Reduced Zone Representation
E
Ener
gy E
Elec
tron
Eg
k 2π/a-2π/a π/a-π/a π/a-π/a
Tutorial September 2008 Barcelona_H. Kohlstedt18
Energy Band Structure of crystalline Solids
Evac
φ
EF
Eg
EF
Metal Semiconductor Insulator
Tutorial September 2008 Barcelona_H. Kohlstedt19
Surface Science, K. W. Kolasinski. Wiley, 2004Fig. 1.9, p. 13
Energy Levels in Si vs. Interatomic Spacing
Fig 3 16 Petty p 84Fig. 3.16 Petty, p. 84
Tutorial September 2008 Barcelona_H. Kohlstedt20
Metal-Vacuum Surface
Vacuum StepAdsorbate
Tutorial September 2008 Barcelona_H. Kohlstedt21
Definitions:
Surface: „Region“ between a material and vacuum
Vacuum
Material
Interface: „Contact region“ between a material A and a material B
Material A
Material B
Tutorial September 2008 Barcelona_H. Kohlstedt22
Vacuum
MetalMetal
Tutorial September 2008 Barcelona_H. Kohlstedt23
Characteristic Length Scales
Example:Metal Surface
++++++++++ ++++- - -
Vacuum_
+Surface dipole layer ++++++++++ ++++
+++++++++++++ Metal
+dipole layer
Spill-out effect of electrons at the surfaceSpill out effect of electrons at the surface
Tutorial September 2008 Barcelona_H. Kohlstedt24
The Jellium-Model
+++++-Metal Vaccuum
++++++ +-
- Spill-out effect of electrons at the surface
++++
Epot
Φpot
Work function : Energy to move an electronfrom bulk to vacuum (far away from the surface)
ΦEF
+ρ(x)
from bulk to vacuum (far away from the surface)
+ρ( )
Charge distribution
Tutorial September 2008 Barcelona_H. Kohlstedt25
- Henzler/Göpel p. 217
Work function : Energy to move an electronΦWork function : Energy to move an electronfrom bulk to vacuum (far away from the surface)
Φ
EpotEvac
ΦEFEF
e-
Metal
x
Tutorial September 2008 Barcelona_H. Kohlstedt26
Three characteristic Length Scales
+ρ(x)
1: Atomic: Dipol layer
2: Micron: Image PotentialF =e2
(2x)2
-
V(x) = -e2
( )
(0.1nm)
(1 µm)
V(x)
V(x) = - 1/x 3 x 6 10-4 µm eV
4x
(1 µm) ( ) µ
3: Macroscopic(several µm)
3: Macroscopic
Φ1
Φ2
Work function:
Tutorial September 2008 Barcelona_H. Kohlstedt27
Work function:Move an electron several µm away from the surface
Electron density vs. Distance (Fermi wavelength)
Friedel Surface
sity
Friedeloscillations
Surface
ron
dens
B lk
Ele
ct Exponential decay into vacuum
Bulk
Distance (in the order of the Fermi wave length, i.e. A)
Lang and Kohn: Phys. Rev. B 1, 4555 (1970).
Tutorial September 2008 Barcelona_H. Kohlstedt28
Surface Science, K. W. KolasinskiWiley, 2004, Fig. 1.10, p. 15
Electron density vs. Distance (Fermi wavelength)
Lang and Kohn: Phys Rev B 1 4555 (1970) H Hövel University of Dortmund GermanyLang and Kohn: Phys. Rev. B 1, 4555 (1970). H. Hövel, University of Dortmund, GermanyFriedel-Oscillations observed near a step (Grahit at 5 Kelvin)
Tutorial September 2008 Barcelona_H. Kohlstedt29
Work Functions for various Metals
Dots: Experimental data
Dashed line: Theory, Jellium Model
Tutorial September 2008 Barcelona_H. Kohlstedt30
Lang and Kohn: Phys. Rev. B 1, 4555 (1970).
Vacuum
Adsorbate(111)(110)
Tutorial September 2008 Barcelona_H. Kohlstedt31
Work Function and Crystal Orientation
f f t d bi
Tutorial September 2008 Barcelona_H. Kohlstedt32
fcc: face centered cubic
Adsorbate Layer on a clean Metal Surface
Adsorbate layer
Vacuum
- - - --++++++++++++++++++++++++++++++++++++++++++++
Metal
Tutorial September 2008 Barcelona_H. Kohlstedt33
Adatom on a Surface
Evac
E3EF
φadsorbatΛ(E)
φclean
Γ
Evac
E2
Metal
( )
Metal
E1E s
Due to adatom on a surface:
x
-Shift of atomic levels-Broadening (Γ)-Shift of work function
Tutorial September 2008 Barcelona_H. Kohlstedt34
Henzler/Göpel, p. 474
Work Function of Tungston vs. Crystal Orientation d Ab ti f Nitand Absorption of Nitrogen
Tutorial September 2008 Barcelona_H. Kohlstedt35
D. L. Adams and L. H. Gremer, Surf. Sci. 27, 21 (1971).
Step
Tutorial September 2008 Barcelona_H. Kohlstedt36
Electrostatic Potential at a Step
The smoothed electronic surface leads to a reduced dipol moment near the step (perpendicular to the surface).Th f th k f ti i l ll d d th t
Tutorial September 2008 Barcelona_H. Kohlstedt37
M. D. Thompson and H. B. Huntington, Surf. Sci 116, 522 (1982).
Therefore the work function is locally reduced near the step.
Work function vs. Step Densityφ
(eV
)Δφ
Step density (106 / cm)
Tutorial September 2008 Barcelona_H. Kohlstedt38
Step density (10 / cm)
K. Besocke, B. Krahl-Urban and H. Wagner, Surf. Sci. 68, 39 (1977).
Dispersion Relation for free and Bulk Electrons
Perodic potential (bulk)Perodic potential (bulk)
Free electron
n E
nerg
y EE
lect
ron
2π/a-2π/a π/a-π/ak
2π/a-2π/a π/a-π/a
Tutorial September 2008 Barcelona_H. Kohlstedt39
Energy Levels: from Atoms to Solids
E
Atom Molecule Bulk (metal) crystal bulk and surface
Epot
EEss
EF
Eel
EF
kkπ/a π/a
Tutorial September 2008 Barcelona_H. Kohlstedt40From Henzler/Göpel p. 192
Surface States of a 3 D Crystal
Hypothetical electronic band structure of a crystal
E(k II) projected bulk band along k
Broken lines in the E(k II) plane indicate surface state bands in the gaps of the projected g p p jbulk-band structure, and surface resonances(degenerated with bulk states) –short doted lines
Tutorial September 2008 Barcelona_H. Kohlstedt41
From: H. Lüth, Surfaces and Interfaces of Solids, Springer, p. 79
Bulk and Surface
EF
Ess
kπ/a
Tutorial September 2008 Barcelona_H. Kohlstedt42
Semiconductor
Metal 1
Metal 2
Metal
Semiconductor/Insulator
Tutorial September 2008 Barcelona_H. Kohlstedt43
Metal 2
Metal 1
Tutorial September 2008 Barcelona_H. Kohlstedt44
Metal-Metal Interface
E M t l 1 M t l 2EVac
E
EF
eΦ1 eΦ2
Metal 1 Metal 2
EF
EVc = Φ2 - Φ1
Vc : Contact potential (Volta voltage)
EF
c p ( g )
Galvani voltage
Tutorial September 2008 Barcelona_H. Kohlstedt45
Interface dipole layer
H. Lüth, Springer: Surfaces and Interfaces of Solids, 2001, p. 372
Dimension of the Interface Dipole Layer
EVc Screening of charge imbalanace:
Positive ion cores and free electroncs
EF
Positive ion cores and free electroncs
Coulomb potential of a point charge:
Metal 1 Metal 2
p p g
Φ(r) = C/r exp (-r/rTF) with rTF ≈ 0.5 (n/a0
3)-1/6rTF 0.5 (n/a0 )rTF ≈ 0.5 A for Cu: n = 8.5 x 1022 cm-3
a0: Bohr radiusInterface dipole layer
ESimpified representation
EF
Tutorial September 2008 Barcelona_H. Kohlstedt46
H. Lüth, Springer: Surfaces and Interfaces of Solids, 2001, p. 373
Contact Voltage: Examples
Ag: 4.33 eVg
Cu: 4.49 eV Clean well defined UHV experiment
Au: 4.83 eV
Vc = Φ2 - Φ1 Au – Ag (0.50 eV)
Not correct: over simplified model
Work function changes due to: atomic structure changes after contact relaxation/reconstructionWork function changes due to: atomic structure changes after contact, relaxation/reconstructionDifferent situation before and after contact
Tutorial September 2008 Barcelona_H. Kohlstedt47
Metal
Semiconductor
Tutorial September 2008 Barcelona_H. Kohlstedt48
The Schottky Contact
EVeΦS χ*SC
n-typ SemiconductorMetal(high work function)
EFEF
EVac
eΦM
CEC
EF
EV
EVac
EC
n-type depletion ρ = -ε0ε d2V/dx2
Poisson EquationEF
EFC
EV
Poisson Equation
Tutorial September 2008 Barcelona_H. Kohlstedt49
H. Lüth, Springer: Surfaces and Interfaces of Solids, 2001, p. 375
e-
The Schottky Barrier
EV
n-typ SemiconductorMetalEVac
χSC Schotty Barrier:Ideal case:E χ*SC
eΦBeΦM
Ideal case:eΦB = eΦM - χSC
eVB
EFEFS = -dΦB /d χ SCS = 1 (slope parameter)
Nonmatching bondsSpace charge layerx
n-type depletion region (≈10 nm -100 nm)Screening length in a semiconductor(l l t th i t l)
Nonmatching bonds, surface states, impurities etc.are not considered
Space charge layer
Tutorial September 2008 Barcelona_H. Kohlstedt50
(less electrons than in a metal)
Schottky and Bardeen Model
High density of interface states
Schottky model (ideal case), too simpleW. Schottky, Z. Physik 113, 123 (1938).
What means Bardeen approach?Phys. Rev. 71, 717, (1947)
no interface states
Tutorial September 2008 Barcelona_H. Kohlstedt51
H. Lüth, Springer: Surfaces and Interfaces of Solids, 2001, p. 376
Barrier heights of Si-Schottky contacts vs. work functions
Bardeen approach to explain the Barrier Height
EVac
n-typ SemiconductorMetal
Δ
χSCE
Δ Interface dipole energy
S = -dΦB /d χ SCS 0 ( l t )
EFEF
S = 0 (slope parameter)due to pinning of EFΦB
EFF
Interface states: EF pinning
Space charge layer10 nm – 100nm
5 A X (not to scale)
Tutorial September 2008 Barcelona_H. Kohlstedt52
Surface states of clean semiconductor persists under metal overlayer (EF pinning)
Qualitative Explanation of Surface (Interface) States
ConductionAtom
A
Conduction band
Due to different bonding
Acceptor
Surface state
B
conditions to bulk atoms
Donor
Levels
ValenceValenceband
H. Lüth Solid Surfaces, Interfaces
Tutorial September 2008 Barcelona_H. Kohlstedt53
,and Thin Films, p. 273, Springer 2001
Schottky, too simple: S = 1Schottky, too simple: S 1
Bardeen, too pessimistic approach: S = 0
Heine´s approach : MIGS (Metal Induced Gap States)V H i Ph R 138 A 1689 (1965)V. Heine Phys. Rev. 138, A 1689 (1965).
Metal Vacuum
Metal Semiconductor
Metal Semiconductor
Tutorial September 2008 Barcelona_H. Kohlstedt54
Measurement of the Slope Parameter S
1) Schottky: Clean limit
2) Bardeen: Surface states at Semic. Surface
3) H i M t l I d d G St t (MIGS)3) Heine: Metal Induced Gap States (MIGS)
4) Real Interface structure and defects are important
S = 0.08 (slope parameter)(from experiment)
Tutorial September 2008 Barcelona_H. Kohlstedt55
Mönch, Springer: Electronic Properties of Semiconductor Interfaces, 2001, p. 6
Wavefunctions of...
Metal Vacuum
... a (clean) metal surface
Metal Semiconductor
... a metal-semiconductor interface
... a surface state
Vacuum Semiconductor
Tutorial September 2008 Barcelona_H. Kohlstedt56Sketch from:
W. Mönch, Electr. Prop. of Semicond. Interf., p. 8
Extrinsic FactorsEVac
E
EFEF
Metal SemiconductorMetal Semiconductor
Reacted region
Interdiffuison region
Tutorial September 2008 Barcelona_H. Kohlstedt57
L. J. Brillson, Surf. Sci. 299/300, 909 (1994).
Nonmatching bonds, surface states, impurities etc.are important to undertand Schottky contacts
The Metal Oxide Semiconductor Capacitor
MOS-Capacitor
Work functionGate metalSiO2
Work functionEnergy gapBand structure
Silicon (Si) Interface statesDefectsDevice fabricationDevice fabrication...
Why it took more than 30 years to realize a MOSFET?
...the MOS cap was a „hard nut“ - in preparation and in understanding!!
Tutorial September 2008 Barcelona_H. Kohlstedt58
...the MOS cap was a „hard nut in preparation and in understanding!!
MOSFET and Interface Traps
Trap density:
Gate metal+ + + + + + + +
ap de s ty< 1012 /cm2/eVrequired
SiO - - TrapsSiO2
- --
- - -
Tutorial September 2008 Barcelona_H. Kohlstedt59
Silicon (Si)
Complex Oxide Interfaces
F t
Ferroelectric
Metal
Ferroelectric
Ferromagnet
Metal Ferromagnet
Tutorial September 2008 Barcelona_H. Kohlstedt60
ABO3 Complex Oxides (2 Examples)
Huge (remanent) surface charge SrRuO3: ConductorFerroelectric
Ba or Pb Sr
Ti
+P -P
O
Ru
Oc
Oa
PbZrxTi1-xO3
Tutorial September 2008 Barcelona_H. Kohlstedt
BaTiO3
Ferroelectric Hysteresis
“1” Pr
BaTiO
Metal
P zatio
n
BaTiO3
Metal
P
E
Pol
ariz
Electric Field
Ec“0”
Electric Field
Pr = 10 – 80 µC/cm2
Ec = 50 – 300 kV/cm2Comparison:
1 l t / f tThin Film Capacitor: t = 100 nm
1 electron/per surface atom:1015/cm2 x 1.6 x 10-19 C =160 µC/cm2
Tutorial September 2008 Barcelona_H. Kohlstedt62VC = 0.5 V - 2 V strong interface
effects expected!!
Metal-Ferroelectric Interfaces
Tutorial September 2008 Barcelona_H. Kohlstedt63
J. F. Scott, Ferroelectric Memories p. 81, Fig. 4.1
Electrical Boundary Conditions
Screening by Electrons
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _Metal
0⇒DE0=⋅∫ dsE+ + + + + + + + + + + + + + + + + + + + +
EDP (only for
f t i !!)
0⇒DE0∫ dsE
perfect screening!!)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
Metal
+ + + + + + + + + + + + + + + + + + + + +
Potential
x
Tutorial September 2008 Barcelona_H. Kohlstedt64P. Würfel and I. P. Batra , Ferroelectrics 12, 55 (1976).
J. Juncquera and Ph. Ghosez, Nature 422, 506 (2003).
Layer Sequence of a Tunnel Junction
Top electrode(50 nm)
T l B iTunnel Barrier(1 nm – 3 nm)
Substrate
B ttBottom Electrode(50 nm)
Tutorial September 2008 Barcelona_H. Kohlstedt65
Reaching the Tunneling Regime
Darrel Schlom & ChambersPenn State &Penn StateMBE grown oxidesJulio Rodriguez
&
SrRuO3S uO3
BaTiO3
21.5 nm2.1 nm
SrRuO380 nm
5 nm
Tutorial September 2008 Barcelona_H. Kohlstedt6620nm
Tunneleffect
real realRe
φxikxeB=ΨBΨ k k xkreal
imaginary
realB
eBΨB xk xk xk
xikC
xeC=Ψ
x
Re AΨ
xikA
xeA −=Ψ
Transmission coefficientTransmission coefficient
⎪
⎪⎬⎫
⎪⎪⎨⎧−= ∫ dxxmCT
t
)(22exp φ
Tutorial September 2008 Barcelona_H. Kohlstedt67
⎪⎭⎬
⎪⎩⎨ ∫
0
)(ph
Frenkel, Phys. Rev. 36 (1930)
Electron Tunneling across a Ferroelectric
H K hl t dt t l Ph R B 72 125341 (2005)
Tutorial September 2008 Barcelona_H. Kohlstedt68
H. Kohlstedt et al., Phys. Rev. B 72, 125341 (2005).E. Y. Tsymbal and H. Kohlstedt, Science 313, 181 (2006).
Superconducting -, Magnetic-, and Ferroelectric Tunnel Junctions
Dielectric Barrier Density of states effects
Superconductor Superconductor Magnet Magnet
[ ]dEEfeVEfEneVEnETAeVI )()()()()(2)( 21 −−⋅−= ∫∞
h
π∫∞−h
Metal Metal
Ferroelectric tunnel junction:
Cooperative phenomenon
Tutorial September 2008 Barcelona_H. Kohlstedt69Ferroelectric Barrier
located in the barrier !
Alternative Screening Mechanism I
Fong, et al., Phys. Rev. B 71, 144112 (2005).Ionic Screening
Tutorial September 2008 Barcelona_H. Kohlstedt70Theoretically: G. Gerra et al., PRL (2006).
Rearrangements of Surface Atoms
Perfect/truncated bulkFew examples:
Relaxation Reconstruction Missing row reconstruction
c2
c1
cbulk
Tutorial September 2008 Barcelona_H. Kohlstedt71
a
From: H. Lüth, Surfaces and Interfaces of Solids, Springer, p. 79
Alternative Screening Mechanism IImetal ferroelectric
Th F i i dThomas-Fermi screening andKretschmer-Binder effect
CTF CKB
B d h ti b fBond charge compensation by freecarriers in the ferroelectric
E t i f th i i l i tiExtension of the ionic polarizationinto the metal; Ionic distortion also in the metal
Tutorial September 2008 Barcelona_H. Kohlstedt72
Sketch taken from G. Gerra et al.,PRL 96. 107603 (2006). Fig.1
Alternative Screening Mechanism
Ionic Screening
Fong, et al., Phys. Rev. B 71, 144112 (2005).
G. Gerra et al., PRL (2006).
1.5
2.0Electron Wave Interference
0.5
1.0
ER
GY
(eV
) M. Indlekofer and H. KohlstedtEurophysics Lett. 72, 282 (2005).Friedel Oscillations at interface;
-1.0
-0.5
0.0
EN
Tutorial September 2008 Barcelona_H. Kohlstedt
5 10 15 20 251.0
z (nm)
Pt/BaTiO3/Pt Tunnel Junctions
Tutorial September 2008 Barcelona_H. Kohlstedt74
J. P. Velev et al., PRL 98, 137201 (2007)
F t
Ferroelectric
Ferromagnet
Ferromagnet
Tutorial September 2008 Barcelona_H. Kohlstedt75
Magnetoelectric Interface Effect
Fe/BaTiO3
Interface between a ferromagnet and a ferroelectric
PPa ferromagnet and a ferroelectric
Top interface
DO
SMinority-spin charge density
Bottom interface
Tutorial September 2008 Barcelona_H. Kohlstedt76C.-G. Duan, S.S. Jaswal and E. Y. Tsymbal,
PRL 97, 047201 (2006).
EF
Multiferroic Materials: BiFeO3, BiMnO3 etc.Multiferroic Heterostructures: FE/FM/FE/FM/….
+ - + -
E+ - + -
P
MN S
ε M
H
ε
N. A. Spaldin and M. Fiebig, Science 309, 391 (2005). Sketch taken from Fig.1.
Hσ
Tutorial September 2008 Barcelona_H. Kohlstedt77
W. Eerenstein, N. D. Mathur and J. F. ScottNature, 442, 759 (2006) and references therein
Fe/BaTiO3/Fe Tunnel Junctions
Tutorial September 2008 Barcelona_H. Kohlstedt78
Julian P. Velev, et al., JOURNAL OF APPLIED PHYSICS 103, 07A701 2008
J.F. Scott, Nat. Mat. 6, 256 (2007).Mat Nat 6 296 (2007)
Tutorial September 2008 Barcelona_H. Kohlstedt79
J.F. Scott, Nat. Mat. 6, 256 (2007).Mat. Nat. 6, 296 (2007).
Travelers undergo a lot
M l l d Ph El t Ph
(Inelastic) Electron Tunneling Spectroscopy
Molecule and Phonon Spectroscopy
Electron-Phonon Coupling α2 (ω,k)Magnons
P. Balk, JAP 1991 J. S. Moodera, PRL 1998 E. L. Wolf, PRB 1985,
n-Si/SiO2/Al Co/Al2O3/Ni80Fe20 Nb/MgO/Ag
Tutorial September 2008 Barcelona_H. Kohlstedt80
Tunneling electrons are extremely sensitive to barrier and interface excitations!
An optimistic Outlook
Pyroelectric
Multiferroic Tunnel Junctions
P t- - -
FerroelectricAnti-ferroelectric
PyroelectricPiezoelectricDielectric
Paramagnet(Anti)-Ferromagnet
Superconductor
+ + +
- - -Multiferroic (Insulator)(Tunnel Barrier)
P, M
+ + +
(Tunnel Barrier)
MagneticAnti-ferromagnetic
Examples: -Cross correlation between magnetic and ferroelectric (piezoelectric) properties
Superconductor-Ferroelectric-Superconductor junction:- Joesphson coupling and screening charge?- Josephson (quasi particle) current and resistive state of the barrier?
Tutorial September 2008 Barcelona_H. Kohlstedt81
Josephson (quasi particle) current and resistive state of the barrier?-Magnet-Ferroelectric-Magnet Junctions:-Spin dependent screening?
A few Milestones in Electron Tunneling
2010Experiments and theory on ferroelectric and multiferroictunnel junctionss
1990 Superconducting HTc tunnel junctions (not successful)First all-oxide magnetic tunnel junctiontunnel junctions
Oxi
des
Magnetic Tunnel Junctions
Supe co duct g c tu e ju ct o s ( ot success u )
1970
Superconducting Tunnel Junctions (LTc)
Magnetic Tunnel Junctions
Magnetic/Superconducting Hybrids, Spin Polarization
s
1950
Superconducting Tunnel Junctions (LTc)
Met
als
1950
Tutorial September 2008 Barcelona_H. Kohlstedt82
1930 Theory and first experiments: Metal/Barrier/Metal
Literature
H. Lüth, Springer: Surfaces and Interfaces of Solids, 2001
Zangwill Cambridge: Physics at Surfaces 1988Zangwill, Cambridge: Physics at Surfaces, 1988
Desjonqueres, Springer: Concepts in Surface Physics
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pdf file: h.h.kohlstedt@fz-juelich.de
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