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Page S1
Electronic Supplementary Information (ESI)
Quantum dot material engineering boosting quantum dot sensitized solar cells
efficiency over 13%
Huashang Rao,ab Mengsi Zhou,ac Zhenxiao Pan,*ab and Xinhua Zhong*ab
aKey Laboratory for Biobased Materials and Energy of Ministry of Education, College of
Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou
510642, ChinabGuangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, ChinacSchool of Chemistry and Molecular Engineering, East China University of Science and
Technology, Shanghai 200237, China
*Corresponding authors
Email: zxpan@scau.edu.cn (for Z. P.)
zhongxh@scau.edu.cn (for X. Z.)
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A.This journal is © The Royal Society of Chemistry 2020
Page S2
Table S1. ZnSe thickness dependent ZCISe/ZnSe cell devices’ photovoltaic performance parameters
ZnSe thickness Jsc (mA·cm-2) Voc (V) FF PCE (%)
average 26.69 0.770 0.668 13.71±0.111 MLchampion 26.70 0.780 0.664 13.84
average 26.04 0.773 0.664 13.36±0.112ML
champion 26.19 0.773 0.665 13.46
average 25.68 0.771 0.663 13.14±0.103ML
champion 25.75 0.775 0.663 13.23
Page S3
Fig. S1 J−V curves for ZCISe/ZnSe QDs with different ZnSe shell thickness.
0.0 0.2 0.4 0.6 0.80
5
10
15
20
25
ZCISe/1ZnSe ZCISe/2ZnSe ZCISe/3ZnSe
Curr
ent d
ensi
ty (m
A/cm
2 )
Potential (V)
Page S4
Fig. S2 XRD patterns of ZCISe, and derived ZCISe/ZnSe QDs. Line XRD pattern corresponds to bulk tetragonal chalcopyrite CISe.
20 30 40 50 60
(312)(220)
Coun
ts (a
.u.)
2
ZCISe ZCISe/ZnSe
(112)
Page S5
Fig. S3 ZnSe thickness dependent (a) UV−vis absorption, and (b) PL emission spectra.
650 700 750 800 850 9000
50
100
150
200
ZCISe ZCISe/1ZnSe ZCISe/2ZnSe ZCISe/3ZnSe
Inte
nsity
(a.u
.)
Wavelength (nm)400 600 800 1000
ZCISe ZCISe/1ZnSe ZCISe/2ZnSe ZCISe/3ZnSe
Norm
alize
d Ab
sorb
ance
Wavelength (nm)
a) b)
Page S6
Table S2. Photovoltaic parameters of ZCISe and ZCISe/ZnSe core/shell based QDSCs under the illumination of one full sun intensity (100 mW/cm2).
QDs Jsc (mA/cm2) Voc (V) FF PCE (%)
ZCISeNMC/Ti
26.2526.1026.4526.0926.30
0.7520.7480.7460.7540.744
0.6350.6330.6320.6350.645
12.5412.3512.5712.4912.65
Average 26.22±0.17 0.750±0.004 0.634±0.002 12.49±0.10
ZCISe/ZnSeNMC/Ti
27.0026.5426.7026.6826.55
0.7690.7610.7800.7650.776
0.6640.6740.6640.6760.660
13.7913.6213.8413.6913.59
Average 26.69±0.19 0.770±0.008 0.668±0.007 13.71±0.11
Page S7
Fig. S4 J−V curves of ZCISe and ZCISe/ZnSe core/shell QDs-based cells under the illumination of one full sun intensity (100 mW/cm2).
0.0 0.20.4
0.60.8
05
1015202530
5431
Curr
ent d
ensi
ty (
mA
/ cm
2 )
SamplesPotential ( V )
20.0 0.2
0.40.6
0.8
05
1015202530
5432
Curr
ent d
ensi
ty (m
A/cm
2 )
SamplesPotential ( V )
1
a) b)
ZCISe ZCISe/ZnSe
Page S8
Certified photovoltaic performance of ZCISe/ZnSe QDSC by CPVT (National
Centre of Supervision and Inspection on Solar Photovoltaic Products Quality, China)
Page S9
Page S10
Fig. S5 ZCISe and ZCISe/ZnSe sensitized TiO2 mesoporous film electrodes. It is noted that the measured film is consisted of 5.0 µm transparent P25 layer.
600 800 10000
1
2
3
4
ZCISe ZCISe/ZnSe
Abs
orba
nce
Wavelength (nm)
Page S11
Fig. S6 Nyquist curves at different forward bias for (a) ZCISe, and (b) ZCISe/ZnSe based QDSCs.
0 20 40 60 80 1000
50
100
150
200
-Z''(
)
Z'()
350 mV 450 mV 550 mV 650 mV
ZCISea)
0 20 40 60 80 1000
50
100
150
200
-Z''(
)
Z'()
350 mV 450 mV 550mV 650 mV
b) ZCISe/ZnSe
Page S12
Table S3. Extracted EIS parameter values for ZCISe and ZCISe/ZnSe based cells at
bias voltage of −0.65 V.
Cells Rs (Ω·cm2) RCE (Ω·cm2)
Cμ (mF·cm-
2)Rrec
(Ω·cm2) τn (ms)
ZCISe 4.66 1.80 19.30 37.91 731.6
ZCISe/ZnSe 4.55 2.36 18.06 62.30 1125.0
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