electronics circuits ii course-part 6-nmos dc circuits

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Electronic Circuits II Course:

NMOS DC Circuits

Dr. Yehya H. Ghallab

Outline

• MOSFET Formulas

• MOSFET Circuits at DC

• NMOS Inverter with Resister Load

2

Outline

• MOSFET Formulas

• MOSFET Circuits at DC

• NMOS Inverter with Resister Load

3

MOSFET Formulas

4

Outline

• Introduction

• MOSFET Formulas

• MOSFET Circuits at DC

• NMOS Inverter with Resister Load

5

Example

6

Solution

7

Example

8

Solution

9

Outline

• Introduction

• MOSFET Formulas

• MOSFET Circuits at DC

• NMOS Inverter with Resister Load

10

NMOS Inverter with Resistor Load

11

• As the input voltage increases (VGS

), the drain to source

voltage (VDS

) decreases and the transistor inter into the

nonsaturation (linear) region.

• If VI <VTN , the transistor is in cutoff and iD = 0, there is no voltage drop across RD, and the output voltage is Vo=VDD=VDS

• If VI >VTN , the transistor is onand initially is biased insaturation region, sinceVDS > VGS -VTN .

NMOS Inverter with Resistor Load

12

If VGS <VTN , the transistor is in cutoff and iD = 0, there is

no voltage drop across RD, and the output voltage is

Vo=VDD=VDS

NMOS Inverter with Resistor Load

13

NMOS Inverter with Resistor Load

14

NMOS Inverter with Resistor Load

15

NMOS Inverter with Resistor Load

16

Summary of NMOS inverter with

Resistor Load

17

Example

For the NMOS inverter shown inFig. V

DD= 3V. Assume transistor

parameters of K’n = 60 μA/v2,W/L = 5, and V

TN= 0.5 V.

(a) Find the value of RD

such thatvo

= 0.1 V when vI= 3 V.

(b) Using the results of part (a)determine the transition pointfor the driver transistor

18

Solution

19

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