ersb nanowire array grown within gasb matrix
Post on 19-Jan-2016
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ErSb nanowire array grown within GaSb matrix
Craig J. Hawker, University of California-Santa Barbara, DMR 0520415IRG-4
GaAs substrate
GaAs bufferGaSb buffer
IRG-4 has used molecular beam epitaxy to grow functional semimetal/semiconductor nanocomposites with control over nanoscale morphology. These nanostructures include highly ordered ErSb nanowire arrays within a GaSb matrix. The unique structural, thermal and electrical properties give these materials great potential in applications such as thermoelectrics and THz technology.
IRG-4 has used molecular beam epitaxy to grow functional semimetal/semiconductor nanocomposites with control over nanoscale morphology. These nanostructures include highly ordered ErSb nanowire arrays within a GaSb matrix. The unique structural, thermal and electrical properties give these materials great potential in applications such as thermoelectrics and THz technology.
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